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公开(公告)号：US20050140248A1
公开(公告)日：2005-06-30
申请号：US11012837
申请日：2004-12-16
CPC分类号： B06B1/0629
摘要： An ultrasonic transducer in which electrodes can be easily and positively joined to a multiplicity of micro-fabricated vibrators and electric wiring can be easily and positively provided. The ultrasonic transducer has a vibrator arrangement having vibrators provided in a predetermined arrangement, each vibrator having first and second electrodes; an interlayer board for holding the vibrator arrangement in which through-holes are respectively formed in positions corresponding to the second electrodes of the vibrators; and a wiring board having a plurality of electrodes electrically connected to the second electrodes of the vibrators through the through-holes formed in the interlayer board, respectively.
摘要翻译： 可以容易且积极地提供其中电极可容易且积极地接合到多个微制造的振动器和电线的超声波换能器。 超声波换能器具有振动器装置，其具有以预定布置设置的振动器，每个振动器具有第一和第二电极; 用于保持振动器装置的夹层板，其中通孔分别形成在与振动器的第二电极相对应的位置中; 以及布线板，其具有分别通过形成在所述夹层板中的所述通孔与所述振动器的所述第二电极电连接的多个电极。
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公开(公告)号：US07309948B2
公开(公告)日：2007-12-18
申请号：US11012837
申请日：2004-12-16
CPC分类号： B06B1/0629
摘要： An ultrasonic transducer in which electrodes can be easily and positively joined to a multiplicity of micro-fabricated vibrators and electric wiring can be easily and positively provided. The ultrasonic transducer has a vibrator arrangement having vibrators provided in a predetermined arrangement, each vibrator having first and second electrodes; an interlayer board for holding the vibrator arrangement in which through-holes are respectively formed in positions corresponding to the second electrodes of the vibrators; and a wiring board having a plurality of electrodes electrically connected to the second electrodes of the vibrators through the through-holes formed in the interlayer board, respectively.
摘要翻译： 可以容易且积极地提供其中电极可容易且积极地接合到多个微制造的振动器和电线的超声波换能器。 超声波换能器具有振动器装置，其具有以预定布置设置的振动器，每个振动器具有第一和第二电极; 用于保持振动器装置的夹层板，其中通孔分别形成在与振动器的第二电极相对应的位置中; 以及布线板，其具有分别通过形成在所述夹层板中的所述通孔与所述振动器的所述第二电极电连接的多个电极。
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3.发明申请Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof 审中-公开在谐振器端面附近具有电流非注入区域的半导体激光器件及其制造方法公开(公告)号：US20050164420A1
公开(公告)日：2005-07-28
申请号：US11076918
申请日：2005-03-11
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/2203 , H01S5/3434
摘要： An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2 film other than the device perimeter.
摘要翻译： n-GaAs缓冲层，n-AlGaAs下包层，n或i-InGaP下光波导层，InGaAsP量子单元有源层，p或i-InGaP上光波导层，p-AlGaAs 在n-GaAs衬底上生长第一上覆层，p或i-InGaP蚀刻停止层，p-AlGaAs第二上覆层和p-GaAs接触层。 在晶片上涂覆光致抗蚀剂，通过蚀刻形成两个沟槽。 然后，去除设备周边上的光致抗蚀剂并选择性地蚀刻接触层。 接下来，剥离光致抗蚀剂。 在整个表面上形成SiO 2膜。 在对应于脊部的SiO 2膜的一部分形成窗口之后，在除SiO 2膜以外的SiO 2膜的区域上形成p电极 设备周长。
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公开(公告)号：US06888866B2
公开(公告)日：2005-05-03
申请号：US09973814
申请日：2001-10-11
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/16 , H01S5/2081 , H01S5/22 , H01S5/2203 , H01S5/3434
摘要： An n-GaAs buffer layer, an n-AlGaAs lower cladding layer, an n- or i-InGaP lower optical waveguide layer, an InGaAsP quantum cell active layer, a p- or i-InGaP upper optical waveguide layer, a p-AlGaAs first upper cladding layer, a p- or i-InGaP etch-stopping layer, a p-AlGaAs second upper cladding layer, and a p-GaAs contact layer, are grown upon an n-GaAs substrate. A photoresist is coated on the wafer, and two grooves are formed by etching. Then, the photoresist on the perimeter of the device is removed and the contact layer is selectively etched. Next, the photoresist is lifted off. A SiO2 film is formed on the entire surface. After a window is formed in a portion of the SiO2 film corresponding to a ridge portion, a p-electrode is formed on a region of the SiO2 film other than the device perimeter.
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5.发明授权Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layer 失效其中近边部分填充有掺杂再生长层的半导体发光器件和再生长层的掺杂剂扩散到有源层的近边缘区域公开(公告)号：US06859478B2
公开(公告)日：2005-02-22
申请号：US10341391
申请日：2003-01-14
申请人： Toshiaki Kuniyasu
发明人： Toshiaki Kuniyasu
CPC分类号： H01S5/164 , H01L33/145 , H01S5/305
摘要： In a process for producing a semiconductor light emitting device, first, a lamination including an active zone, cladding layers, and a current confinement layer is formed. Then, a near-edge portion of the lamination having a stripe width is removed so as to produce a first space, and a second near-edge portion located under the first space and a stripe portion of the lamination being located inside the first space and having the stripe width are concurrently removed so that a second space is produced, and cross sections of the active layer and the current confinement layer are exposed in the second space. Finally, the first and second spaces are filled with a regrowth layer so that a dopant to the regrowth layer is diffused into a near-edge region of the remaining portion of the active layer.
摘要翻译： 在制造半导体发光器件的方法中，首先，形成包括有源区，包覆层和电流限制层的层叠体。 然后，去除具有条纹宽度的层叠体的近边缘部分，以便产生第一空间，以及位于第一空间下方的第二近边缘部分和位于第一空间内部的叠片的条状部分， 具有带宽的同时被去除，从而产生第二空间，并且有源层和电流限制层的横截面在第二空间中露出。 最后，第一和第二空间填充有再生长层，使得再生长层的掺杂剂扩散到有源层的剩余部分的近边缘区域。
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公开(公告)号：US06744797B2
公开(公告)日：2004-06-01
申请号：US10114059
申请日：2002-04-03
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/16 , H01S5/3413 , H01S5/34386
摘要： A semiconductor laser device improves reliability during high-power oscillation. An n-type GaAs buffer layer, an n-type In0.48Ga0.52P lower cladding layer, an n-type or i-type Inx1Ga1−x1As1−y1Py1 optical waveguide layer, an i-type GaAs1−y2Py2 tensile-strain barrier layer, an Inx3Ga1−3As1−y3Py3 compressive-strain quantum-well active layer, an i-type GaAs1−y2Py2 tensile-strain barrier layer, a p-type or i-type Inx1Ga1−x1As1−y1Py1 upper optical waveguide layer, a p-type In0.48Ga0.52P first upper cladding layer, a GaAs etching stop layer, a p-type In0.48Ga0.52P second upper cladding layer, and a p-type GaAs contact layer are grown on a plane of an n-type GaAs substrate. Two ridge trenches are formed on the resultant structure, and current non-injection regions are formed by removing the p-type GaAs contact layer in portions extending inwardly by 30 &mgr;m from cleavage positions of edge facets of the resonator on a top face of a ridge portion between the ridge trenches.
摘要翻译： 半导体激光器件在高功率振荡期间提高了可靠性。 n型GaAs缓冲层，n型In0.48Ga0.52P下包层，n型或i型Inx1Ga1-x1As1-y1Py1光波导层，i型GaAs1-y2Py2拉伸应变阻挡层 Inx3Ga1-3As1-y3Py3压缩应变量子阱有源层，i型GaAs1-y2Py2拉伸应变势垒层，p型或i型Inx1Ga1-x1As1-y1Py1上部光波导层， 在n型GaAs的平面上生长In0.48Ga0.52P的第一上包层，GaAs蚀刻停止层，p型In0.48Ga0.52P第二上覆层和p型GaAs接触层 基质。 在所得结构上形成两个脊沟槽，并且通过从脊的顶面上的谐振器的边缘切口的切割位置向内延伸30微米的部分去除p型GaAs接触层，形成电流的非注入区域 脊沟槽之间的部分。
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7.发明授权公开(公告)号：US07054135B2
公开(公告)日：2006-05-30
申请号：US11220693
申请日：2005-09-08
申请人： Toshiaki Kuniyasu
发明人： Toshiaki Kuniyasu
IPC分类号： H01G4/228
CPC分类号： H01G4/232 , H01L27/20 , H01L41/0475 , H01L41/083 , H01L41/293 , H01L41/338 , Y10T29/435
摘要： A multilayered structure array has narrow pitches by making thinner coatings for insulating internal electrode layers from side electrodes and the productivity of the multilayered structure array is improved. The multilayered structure includes: a first internal electrode layer; a piezoelectric layer formed on the first internal electrode layer; a second internal electrode layer formed on the piezoelectric layer; a first coating formed on an end surface of the first internal electrode layer in a first side surface region of the multilayered structure and containing one of metal oxide, metal nitride, metal fluoride and metal sulfide in at least one part thereof; and a second coating formed on an end surface of the second internal electrode layer in a second side surface region of the multilayered structure and containing one of metal oxide, metal nitride, metal fluoride and metal sulfide in at least one part thereof.
摘要翻译： 多层结构阵列具有窄的间距，通过制造较薄的涂层，用于将内部电极层与侧面电极绝缘，并且提高了多层结构阵列的生产率。 多层结构包括：第一内部电极层; 形成在所述第一内部电极层上的压电层; 形成在压电层上的第二内部电极层; 在所述多层结构体的第一侧面区域中形成在所述第一内部电极层的端面上的第一涂层，并且在其至少一部分中含有金属氧化物，金属氮化物，金属氟化物和金属硫化物中的一种; 以及第二涂层，其在所述多层结构体的第二侧表面区域中形成在所述第二内部电极层的端面上，并且在其至少一部分中含有金属氧化物，金属氮化物，金属氟化物和金属硫化物中的一种。
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8.发明授权公开(公告)号：US06709513B2
公开(公告)日：2004-03-23
申请号：US10188038
申请日：2002-07-03
IPC分类号： C30B2504
CPC分类号： C30B25/02 , C30B25/18 , C30B29/406 , H01L21/0237 , H01L21/02378 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L21/0265
摘要： In a process for producing a substrate for use in a semiconductor element: a porous anodic alumina film having a great number of minute pores is formed on a surface of a base substrate; the surface of the base substrate is etched by using the porous anodic alumina film as a mask so as to form a great number of pits on the surface of the base substrate; the porous anodic alumina film is removed; and a GaN layer is formed on the surface of the base substrate by crystal growth.
摘要翻译： 在半导体元件用基板的制造方法中，在基板的表面上形成具有大量微小孔的多孔阳极氧化铝膜， 通过使用多孔阳极氧化铝膜作为掩模蚀刻基底基板的表面，以在基底表面上形成大量凹坑; 去除多孔阳极氧化铝膜; 并且通过晶体生长在基板的表面上形成GaN层。
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9.发明授权Semiconductor light emitting device in which near-edge portion is filled with doped regrowth layer, and dopant to regrowth layer is diffused into near-edge region of active layer 有权其中近边部分填充有掺杂再生长层的半导体发光器件和再生长层的掺杂剂扩散到有源层的近边缘区域公开(公告)号：US06541291B2
公开(公告)日：2003-04-01
申请号：US09934571
申请日：2001-08-23
申请人： Toshiaki Kuniyasu
发明人： Toshiaki Kuniyasu
IPC分类号： H01L2100
CPC分类号： H01S5/164 , H01L33/145 , H01S5/305
摘要： In a process for producing a semiconductor light emitting device, first, a lamination including an active zone, cladding layers, and a current confinement layer is formed. Then, a near-edge portion of the lamination having a stripe width is removed so as to produce a first space, and a second near-edge portion located under the first space and a stripe portion of the lamination being located inside the first space and having the stripe width are concurrently removed so that a second space is produced, and cross sections of the active layer and the current confinement layer are exposed in the second space. Finally, the first and second spaces are filled with a regrowth layer so that a dopant to the regrowth layer is diffused into a near-edge region of the remaining portion of the active layer.
摘要翻译： 在制造半导体发光器件的方法中，首先，形成包括有源区，包覆层和电流限制层的层叠体。 然后，去除具有条纹宽度的层叠体的近边缘部分，以便产生第一空间，以及位于第一空间下方的第二近边缘部分和位于第一空间内部的叠片的条状部分， 具有带宽的同时被去除，从而产生第二空间，并且有源层和电流限制层的横截面在第二空间中露出。 最后，第一和第二空间填充有再生长层，使得再生长层的掺杂剂扩散到有源层的剩余部分的近边缘区域。
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公开(公告)号：US06268230B1
公开(公告)日：2001-07-31
申请号：US09421324
申请日：1999-10-18
申请人： Toshiaki Kuniyasu
发明人： Toshiaki Kuniyasu
IPC分类号： H01L2100
摘要： By providing an area where an Au film 28b is removed and a Ti film 28a is exposed along the plane tangent to the side where the p-n junction of a semiconductor chip is exposed, sticking of the Au film 28b to the chip side or protruding of the film as a flash from the side is prevented, which normally provides a starting place for creep of a solder 42 on the chip side, which in turn causes p-n junction short-circuiting when dividing of chips.
摘要翻译： 通过设置去除Au膜28b的区域，并且沿着与半导体芯片的pn结露出的一侧相切的平面露出Ti膜28a，将Au膜28b粘附到芯片侧或突起 防止从侧面闪烁的膜，这通常为芯片侧的焊料42的蠕变提供起始位置，这又导致在芯片分割时pn结短路。
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