Ring oscillator having variable capacitance circuits for frequency adjustment
    2.
    发明授权
    Ring oscillator having variable capacitance circuits for frequency adjustment 有权
    环形振荡器具有用于频率调节的可变电容电路

    公开(公告)号:US06690241B2

    公开(公告)日:2004-02-10

    申请号:US09539892

    申请日:2000-03-31

    IPC分类号: H03B502

    摘要: A tester is connected to a signal output terminal provided in a DRAM chip, and a frequency of a clock signal output from an internal timer is monitored. The frequency of the clock signal is varied by changing the combination of 3 bit signals, so as to obtain signals by which the frequency closest to the set value is obtained. A fuse in the internal timer is disconnected to set the frequency of the clock signal so as to obtain the same state as in the case where that signal is applied. The internal timer includes an oscillator formed of a plurality of inverters connected in ring shape and a variable capacitance circuit for each inverter. Each variable capacitance circuit includes a plurality of sets of transfer gates, fuses and capacitors connected between the output node of the corresponding inverter and a prescribed potential line.

    摘要翻译: 测试器连接到设置在DRAM芯片中的信号输出端子,并且监视从内部定时器输出的时钟信号的频率。 通过改变3位信号的组合来改变时钟信号的频率,以获得最接近设定值的频率的信号。 内部定时器中的保险丝断开以设置时钟信号的频率,以获得与施加该信号的情况相同的状态。 内部定时器包括由环形连接的多个逆变器和每个逆变器的可变电容电路构成的振荡器。 每个可变电容电路包括连接在相应逆变器的输出节点和规定电位线之间的多组传输门,熔丝和电容器。

    Method for making level converting circuit, internal potential generating circuit and internal potential generating unit
    5.
    发明授权
    Method for making level converting circuit, internal potential generating circuit and internal potential generating unit 有权
    制造电平转换电路,内部电位产生电路和内部电位产生单元的方法

    公开(公告)号:US06197643B1

    公开(公告)日:2001-03-06

    申请号:US09338574

    申请日:1999-06-23

    IPC分类号: H01L218234

    摘要: The level converting circuit includes a first current cutting circuit, a second current cutting circuit, a level shift circuit and an inverter. The first current cutting circuit includes two PMOS transistors connected to a node having a boosted potential Vpp. The second current cutting circuit includes two NMOS transistor connected to a ground node. The level shift circuits include two PMOS transistors and two NMOS transistors. Before a through current flows between the node having the boosted potential Vpp and the ground node, any of the transistor included in the first current cutting circuit and any of the transistors included in the second current cutting circuits are turned off. Therefore, through current between the node having the boosted potential Vbb and the ground node can be prevented.

    摘要翻译: 电平转换电路包括第一电流切断电路,第二电流切断电路,电平移位电路和反相器。 第一电流切割电路包括连接到具有升压电位Vpp的节点的两个PMOS晶体管。 第二电流切断电路包括连接到接地节点的两个NMOS晶体管。 电平移位电路包括两个PMOS晶体管和两个NMOS晶体管。 在直流电流在具有升压电位Vpp的节点和接地节点之间流动之前,包括在第一电流切割电路中的任何晶体管和包括在第二电流切割电路中的任何晶体管都被截止。 因此,可以防止具有升压电位Vbb的节点与接地节点之间的电流。

    Potential detecting circuit and semiconductor integrated circuit

    公开(公告)号:US5760614A

    公开(公告)日:1998-06-02

    申请号:US667178

    申请日:1996-06-20

    CPC分类号: H03K5/08

    摘要: A constant current source (1) is provided between a power supply (VCC) and an intermediate node (N1) and supplies a reference current (IR) which is a constant current between the power supply (VCC) and the intermediate node (N1). A variable resistor (2) is provided between the intermediate node (N1) and a comparison potential (VL) and its resistance value can be set to a desired value. A current flowing in the variable resistor (2) is a comparison current (IC). An amplifier (3) has an input connected to the intermediate node (N1) and amplifies a potential from the intermediate node (N1) to output a level detection signal (GE). Having this configuration, a potential detecting circuit which ensures a stable and controllable detection level is provided.