公开(公告)号：US6104039A

公开(公告)日：2000-08-15

申请号：US84187

申请日：1998-05-26

申请人： Tsunenori Asatsuma ,  Katsunori Yanashima ,  Takao Miyajima

发明人： Tsunenori Asatsuma ,  Katsunori Yanashima ,  Takao Miyajima

IPC分类号： H01L21/203 ,  H01L21/205 ,  H01L29/205 ,  H01L29/207 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01L33/00

CPC分类号： H01L33/325 ,  H01L29/205 ,  H01L29/207 ,  H01L33/007

摘要： A plurality of first layers made of AlGaN mixed crystal each having a thickness of the order of 1 to 100 nm and a plurality of second layers of p-type GaN with Mg each having a thickness of the order of 1 to 100 nm are alternately stacked. Since each of the first and second layers is thin, the stacked layers as a whole have properties of p-type AlGaN mixed crystal although the first layers do not include Mg and the second layers do not include Al. An Al source and a Mg source are temporally separated to be introduced in a stacking process. A reaction between the Al source and Mg source which may interfere desirable crystal growth is thereby prevented. Crystals of good quality are thus grown and electrical conductivity is thereby improved.

摘要翻译： 交替堆叠由AlGaN混合晶体构成的厚度为1〜100nm左右的多个第一层和多个厚度为1〜100nm的Mg的p型GaN的多个第二层交替堆叠 。 由于第一层和第二层中的每一个都是薄的，堆叠层整体上具有p型AlGaN混晶的性质，尽管第一层不包括Mg，第二层不包括Al。 Al源和Mg源在时间上分离以引入堆叠过程。 因此可以防止可能干扰所需晶体生长的Al源和Mg源之间的反应。 因此生长质量好的晶体，从而提高导电性。

公开(公告)号：US06471769B2

公开(公告)日：2002-10-29

申请号：US09365903

申请日：1999-08-03

申请人： Shigeki Hashimoto ,  Katsunori Yanashima ,  Tsunenori Asatsuma ,  Masao Ikeda

发明人： Shigeki Hashimoto ,  Katsunori Yanashima ,  Tsunenori Asatsuma ,  Masao Ikeda

IPC分类号： C30B2514

CPC分类号： C30B25/02 ,  C30B29/403 ,  C30B29/406

摘要： When nitride series III-V group compound semiconductor is manufactured by gas phase growing using starting material for a group III element, ammonia as a starting material for a group V element and hydrogen, the gas phase molar ratio of hydrogen to the total amount of hydrogen and ammonia (H2/(H2+NH3)) is specified to 0.3

摘要翻译： 当通过使用III族元素的原料气相生长制造氮化物系III-V族化合物半导体时，作为V族元素和氢的原料的氨，氢气与氢的总量的气相摩尔比 （H2 /（H2 + NH3））为0.3 <（H2 /（H2 + NH3））<0.7,0.3 <（H2 /（H2 + NH3））<0.6或0.4 <（H2 /（H2 + NH3））<0.5。 因此，可以制造氮化物系III-V族化合物半导体，其具有较少的非发射中心和优异的结晶度。

公开(公告)号：US20070085093A1

公开(公告)日：2007-04-19

申请号：US11533965

申请日：2006-09-21

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US08859401B2

公开(公告)日：2014-10-14

申请号：US13102404

申请日：2011-05-06

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40 ,  H01L21/02 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/46

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US20060258027A1

公开(公告)日：2006-11-16

申请号：US11383526

申请日：2006-05-16

申请人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

发明人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L33/12 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.

摘要翻译： 一种制造发光二极管的方法，其包括以下步骤：提供在一个主表面上具有至少一个凹部的基板，并且通过制作三角形的状态生长第一氮化物基III-V族化合物半导体层 所述凹部具有作为所述凹部的底面，从而埋设所述凹部; 从衬底上的第一氮化物基III-V族化合物半导体层横向生长第二氮化物基III-V族化合物半导体层; 并且在第二氮化物基III-V族化合物上依次生长第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层， V族化合物半导体层。

公开(公告)号：US20110212559A1

公开(公告)日：2011-09-01

申请号：US13102404

申请日：2011-05-06

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L33/32

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US07754504B2

公开(公告)日：2010-07-13

申请号：US11383526

申请日：2006-05-16

申请人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

发明人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L33/12 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.

摘要翻译： 一种制造发光二极管的方法，其包括以下步骤：提供在一个主表面上具有至少一个凹部的基板，并且通过制作三角形的状态生长第一氮化物基III-V族化合物半导体层 所述凹部具有作为所述凹部的底面，从而埋设所述凹部; 从衬底上的第一氮化物基III-V族化合物半导体层横向生长第二氮化物基III-V族化合物半导体层; 并且在第二氮化物基III-V族化合物上依次生长第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层， V族化合物半导体层。

公开(公告)号：US09034738B2

公开(公告)日：2015-05-19

申请号：US11533965

申请日：2006-09-21

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40 ,  H01L21/02 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/46

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US20100308349A1

公开(公告)日：2010-12-09

申请号：US12797042

申请日：2010-06-09

申请人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

发明人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

IPC分类号： H01L33/08 ,  H01L33/30

CPC分类号： H01L33/007 ,  H01L33/12 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting diode with (a) a substrate having at least one recessed portion on one main surface; (b) a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and (c) a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer, wherein, a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.

摘要翻译： 一种发光二极管，其具有（a）在一个主表面上具有至少一个凹部的基板; （b）在所述基板上生长的第六氮化物基III-V族化合物半导体层，而不在所述凹部中形成空间; 和（c）在第六氮化物基上形成的第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层 III-V族化合物半导体层，其中，所述第六氮化物系III-V族化合物半导体层中的与所述凹部的底面的界面在与所述一个主面垂直的方向上的位错发生位错到达 具有凹部的底面的三角形的倾斜面或其附近为基部，并且在与该一个主面平行的方向上弯曲。

公开(公告)号：US08953656B2

公开(公告)日：2015-02-10

申请号：US13354053

申请日：2012-01-19

申请人： Takashi Kyono ,  Shimpei Takagi ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masaki Ueno ,  Katsunori Yanashima

发明人： Takashi Kyono ,  Shimpei Takagi ,  Takamichi Sumitomo ,  Yusuke Yoshizumi ,  Yohei Enya ,  Masaki Ueno ,  Katsunori Yanashima

IPC分类号： H01S5/00 ,  H01S5/343 ,  H01S5/32 ,  H01S5/02 ,  H01S5/10 ,  H01S5/20

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/1082 ,  H01S5/2009 ,  H01S5/3202

摘要： A Group III nitride semiconductor laser device includes a laser structure including a support substrate with a semipolar primary surface of a hexagonal Group III nitride semiconductor, and a semiconductor region thereon, and an electrode, provided on the semiconductor region, extending in a direction of a waveguide axis in the laser device. The c-axis of the nitride semiconductor is inclined at an angle ALPHA relative to a normal axis to the semipolar surface toward the waveguide axis direction. The laser structure includes first and second fractured faces intersecting with the waveguide axis. A laser cavity of the laser device includes the first and second fractured faces extending from edges of first and second faces. The first fractured face includes a step provided at an end face of an InGaN layer of the semiconductor region and extending in a direction from one side face to the other of the laser device.

摘要翻译： III族氮化物半导体激光器件包括激光器结构，其包括具有六方晶III族氮化物半导体的半极性主表面的支撑衬底和其上的半导体区域，以及设置在半导体区域上的电极，沿着 波导轴在激光装置中。 氮化物半导体的c轴相对于朝向波导轴方向的半极性表面的法线轴线以一角度ALPHA倾斜。 激光器结构包括与波导轴相交的第一和第二断裂面。 激光装置的激光腔包括从第一和第二面的边缘延伸的第一和第二断裂面。 第一断裂面包括设置在半导体区域的InGaN层的端面并沿从激光器件的一个侧面到另一个的方向延伸的台阶。