公开(公告)号：US20070085093A1

公开(公告)日：2007-04-19

申请号：US11533965

申请日：2006-09-21

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US09034738B2

公开(公告)日：2015-05-19

申请号：US11533965

申请日：2006-09-21

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40 ,  H01L21/02 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/46

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US20110212559A1

公开(公告)日：2011-09-01

申请号：US13102404

申请日：2011-05-06

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L33/32

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US08859401B2

公开(公告)日：2014-10-14

申请号：US13102404

申请日：2011-05-06

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40 ,  H01L21/02 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/46

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US20100308349A1

公开(公告)日：2010-12-09

申请号：US12797042

申请日：2010-06-09

申请人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

发明人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

IPC分类号： H01L33/08 ,  H01L33/30

CPC分类号： H01L33/007 ,  H01L33/12 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light-emitting diode with (a) a substrate having at least one recessed portion on one main surface; (b) a sixth nitride-based III-V group compound semiconductor layer grown on the substrate without forming a space in the recessed portion; and (c) a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type formed over the sixth nitride-based III-V group compound semiconductor layer, wherein, a dislocation occurring, in the sixth nitride-based III-V group compound semiconductor layer, from an interface with a bottom surface of the recessed portion in a direction vertical to the one main surface arrives at an inclined face or its vicinity of a triangle having the bottom surface of the recessed portion as a base and bends in a direction parallel to the one main surface.

摘要翻译： 一种发光二极管，其具有（a）在一个主表面上具有至少一个凹部的基板; （b）在所述基板上生长的第六氮化物基III-V族化合物半导体层，而不在所述凹部中形成空间; 和（c）在第六氮化物基上形成的第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层 III-V族化合物半导体层，其中，所述第六氮化物系III-V族化合物半导体层中的与所述凹部的底面的界面在与所述一个主面垂直的方向上的位错发生位错到达 具有凹部的底面的三角形的倾斜面或其附近为基部，并且在与该一个主面平行的方向上弯曲。

公开(公告)号：US20060258027A1

公开(公告)日：2006-11-16

申请号：US11383526

申请日：2006-05-16

申请人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

发明人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L33/12 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.

摘要翻译： 一种制造发光二极管的方法，其包括以下步骤：提供在一个主表面上具有至少一个凹部的基板，并且通过制作三角形的状态生长第一氮化物基III-V族化合物半导体层 所述凹部具有作为所述凹部的底面，从而埋设所述凹部; 从衬底上的第一氮化物基III-V族化合物半导体层横向生长第二氮化物基III-V族化合物半导体层; 并且在第二氮化物基III-V族化合物上依次生长第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层， V族化合物半导体层。

公开(公告)号：US07754504B2

公开(公告)日：2010-07-13

申请号：US11383526

申请日：2006-05-16

申请人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

发明人： Akira Ohmae ,  Shigetaka Tomiya ,  Yuki Maeda ,  Michinori Shiomi ,  Takaaki Ami ,  Takao Miyajima ,  Katsunori Yanashima ,  Takashi Tange ,  Atsushi Yasuda

IPC分类号： H01L21/00

CPC分类号： H01L33/007 ,  H01L33/12 ,  H01L33/22 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1305 ,  H01L2924/00014 ,  H01L2924/00

摘要： A method for making a light-emitting diode, which including the steps of: providing a substrate having at least one recessed portion on one main surface and growing a first nitride-based III-V group compound semiconductor layer through a state of making a triangle in section having a bottom surface of the recessed portion as a base thereby burying the recessed portion; laterally growing a second nitride-based III-V group compound semiconductor layer from the first nitride-based III-V group compound semiconductor layer over the substrate; and successively growing a third nitride-based III-V group compound semiconductor layer of a first conduction type, an active layer and a fourth nitride-based III-V group compound semiconductor layer of a second conduction type on the second nitride-based III-V group compound semiconductor layer.

摘要翻译： 一种制造发光二极管的方法，其包括以下步骤：提供在一个主表面上具有至少一个凹部的基板，并且通过制作三角形的状态生长第一氮化物基III-V族化合物半导体层 所述凹部具有作为所述凹部的底面，从而埋设所述凹部; 从衬底上的第一氮化物基III-V族化合物半导体层横向生长第二氮化物基III-V族化合物半导体层; 并且在第二氮化物基III-V族化合物上依次生长第二导电类型的第一导电类型，有源层和第四氮化物基III-V族化合物半导体层的第三氮化物基III-V族化合物半导体层， V族化合物半导体层。

公开(公告)号：US08435880B2

公开(公告)日：2013-05-07

申请号：US12906217

申请日：2010-10-18

申请人： Akira Ohmae ,  Kota Tokuda ,  Masayuki Arimochi ,  Nobuhiro Suzuki ,  Michinori Shiomi ,  Tomonori Hino ,  Katsunori Yanashima

发明人： Akira Ohmae ,  Kota Tokuda ,  Masayuki Arimochi ,  Nobuhiro Suzuki ,  Michinori Shiomi ,  Tomonori Hino ,  Katsunori Yanashima

IPC分类号： H01L33/00

CPC分类号： H01L33/16 ,  H01L33/007 ,  H01L33/32 ,  H01S5/3013

摘要： In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than −0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis.

摘要翻译： 在制造半导体器件的方法中，该方法包括以下步骤：在不生长缓冲层的情况下，直接在衬底上生长形成器件结构的氮化物III-V族化合物半导体层，该衬底由材料 具有六边形晶体结构，并且具有相对于C轴方向从R平面以不小于-0.5°且不大于0°的角度取向的主表面。

公开(公告)号：US20110095401A1

公开(公告)日：2011-04-28

申请号：US12906217

申请日：2010-10-18

申请人： Akira Ohmae ,  Kota Tokuda ,  Masayuki Arimochi ,  Nobuhiro Suzuki ,  Michinori Shiomi ,  Tomonori Hino ,  Katsunori Yanashima

发明人： Akira Ohmae ,  Kota Tokuda ,  Masayuki Arimochi ,  Nobuhiro Suzuki ,  Michinori Shiomi ,  Tomonori Hino ,  Katsunori Yanashima

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L33/16 ,  H01L33/007 ,  H01L33/32 ,  H01S5/3013

摘要： In a method for manufacturing a semiconductor device, the method includes the step of growing a nitride-based III-V compound semiconductor layer, which forms a device structure, directly on a substrate without growing a buffer layer, the substrate being made of a material with a hexagonal crystal structure and having a principal surface that is oriented off at an angle of not less than −0.5° and not more than 0° from an R-plane with respect to a direction of a C-axis.

摘要翻译： 在制造半导体器件的方法中，该方法包括以下步骤：在不生长缓冲层的情况下，直接在衬底上生长形成器件结构的氮化物III-V族化合物半导体层，该衬底由材料 具有六边形晶体结构，并且具有相对于C轴方向从R平面以不小于-0.5°且不大于0°的角度取向的主表面。

公开(公告)号：US06960262B2

公开(公告)日：2005-11-01

申请号：US10486801

申请日：2003-06-17

申请人： Koji Sasaki ,  Hironobu Narui ,  Katsunori Yanashima ,  Akihiko Memezawa

发明人： Koji Sasaki ,  Hironobu Narui ,  Katsunori Yanashima ,  Akihiko Memezawa

IPC分类号： H05B33/10 ,  C23C14/12 ,  C23C14/24 ,  C23C16/455 ,  H01L51/50 ,  C23C16/00

CPC分类号： C23C14/228 ,  C23C14/12

摘要： A thin film formation apparatus by which source gas is supplied uniformly to the surface of a substrate so that an organic thin film of a uniform film thickness can be formed on the surface of the substrate. The thin film formation apparatus includes a vacuum chamber (11), a substrate holder (12) provided in the vacuum chamber (11), and a gas supplying end element (22) for supplying gas toward a substrate mounting face (12a) of the substrate holder (12). The gas supplying end element (22) is formed so as to supply the source gas in an elongated rectangular shape to the substrate mounting face (12a).

摘要翻译： 将源气体均匀地供给到基板的表面的薄膜形成装置，能够在基板的表面上形成均匀膜厚的有机薄膜。 薄膜形成装置包括真空室（11），设置在真空室（11）中的基板保持件（12）和用于向基板安装面（12a）供给气体的气体供给端部元件（22） 衬底保持器（12）。 气体供给端元件（22）形成为将细长的矩形形状的源气体供给到基板安装面（12a）。