公开(公告)号：US20110212559A1

公开(公告)日：2011-09-01

申请号：US13102404

申请日：2011-05-06

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L33/32

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US08859401B2

公开(公告)日：2014-10-14

申请号：US13102404

申请日：2011-05-06

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobutaka Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40 ,  H01L21/02 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/46

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US20070085093A1

公开(公告)日：2007-04-19

申请号：US11533965

申请日：2006-09-21

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US09034738B2

公开(公告)日：2015-05-19

申请号：US11533965

申请日：2006-09-21

申请人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

发明人： Akira Ohmae ,  Michinori Shiomi ,  Noriyuki Futagawa ,  Takaaki Ami ,  Takao Miyajima ,  Yuuji Hiramatsu ,  Izuho Hatada ,  Nobukata Okano ,  Shigetaka Tomiya ,  Katsunori Yanashima ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L21/00 ,  C30B23/04 ,  C30B25/04 ,  C30B29/40 ,  H01L21/02 ,  H01L33/00 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/46

CPC分类号： H01L33/0025 ,  C30B23/04 ,  C30B25/04 ,  C30B29/403 ,  H01L21/02439 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02642 ,  H01L21/02647 ,  H01L27/15 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/08 ,  H01L33/12 ,  H01L33/22 ,  H01L33/24 ,  H01L33/32 ,  H01L33/46

摘要： A method for manufacturing a light-emitting diode, which includes the steps of: providing a substrate having a plurality of protruded portions on one main surface thereof wherein the protruded portion is made of a material different in type from that of the substrate and growing a first nitride-based III-V Group compound semiconductor layer on each recess portion of the substrate through a state of making a triangle in section wherein a bottom surface of the recess portion becomes a base of the triangle; laterally growing a second nitride-based III-V Group compound semiconductor layer on the substrate from the first nitride-based III-V Group compound semiconductor layer; and successively growing, on the second nitride-based III-V Group compound semiconductor layer, a third nitride-based III-V Group compound semiconductor layer of a first conduction type, an active layer, and a fourth nitride-based III-V compound semiconductor layer of a second conduction type.

摘要翻译： 一种制造发光二极管的方法，包括以下步骤：在其一个主表面上提供具有多个突出部分的基板，其中突出部分由与基板不同的材料制成并生长 第一氮化物系III-V族化合物半导体层，其通过在凹部的底面成为三角形的基部的截面为三角形状的基板的每个凹部上; 在第一氮化物基III-V族化合物半导体层上在衬底上横向生长第二氮化物III-V族化合物半导体层; 并且在第二氮化物III-V族化合物半导体层上依次生长第一导电类型，有源层和第四氮化物III-V族化合物的第三氮化物基III-V族化合物半导体层 第二导电类型的半导体层。

公开(公告)号：US06960262B2

公开(公告)日：2005-11-01

申请号：US10486801

申请日：2003-06-17

申请人： Koji Sasaki ,  Hironobu Narui ,  Katsunori Yanashima ,  Akihiko Memezawa

发明人： Koji Sasaki ,  Hironobu Narui ,  Katsunori Yanashima ,  Akihiko Memezawa

IPC分类号： H05B33/10 ,  C23C14/12 ,  C23C14/24 ,  C23C16/455 ,  H01L51/50 ,  C23C16/00

CPC分类号： C23C14/228 ,  C23C14/12

摘要： A thin film formation apparatus by which source gas is supplied uniformly to the surface of a substrate so that an organic thin film of a uniform film thickness can be formed on the surface of the substrate. The thin film formation apparatus includes a vacuum chamber (11), a substrate holder (12) provided in the vacuum chamber (11), and a gas supplying end element (22) for supplying gas toward a substrate mounting face (12a) of the substrate holder (12). The gas supplying end element (22) is formed so as to supply the source gas in an elongated rectangular shape to the substrate mounting face (12a).

摘要翻译： 将源气体均匀地供给到基板的表面的薄膜形成装置，能够在基板的表面上形成均匀膜厚的有机薄膜。 薄膜形成装置包括真空室（11），设置在真空室（11）中的基板保持件（12）和用于向基板安装面（12a）供给气体的气体供给端部元件（22） 衬底保持器（12）。 气体供给端元件（22）形成为将细长的矩形形状的源气体供给到基板安装面（12a）。

公开(公告)号：US20050238806A1

公开(公告)日：2005-10-27

申请号：US10516797

申请日：2003-06-05

申请人： Katsunori Yanashima ,  Hironobu Narui ,  Akihiko Memezawa ,  Koji Sasaki

发明人： Katsunori Yanashima ,  Hironobu Narui ,  Akihiko Memezawa ,  Koji Sasaki

IPC分类号： H05B33/10 ,  C23C14/12 ,  C23C14/24 ,  H01L51/40 ,  H01L51/50 ,  H01L51/56 ,  C23C16/00

CPC分类号： C23C14/243 ,  C23C14/12 ,  C23C14/228 ,  H01L51/001 ,  H01L51/56

摘要： A method for forming, without heat evolution, an organic thin film with homogeneous quality on the surface of the substrate. The method consists of vaporizing a single film-forming component of organic material, thereby evolving a film-forming gas (g2), transporting and feeding the film-forming gas (g2) into a reaction chamber (11) in which a substrate (W) is placed, and depositing the organic material, while keeping the film-forming component, on the surface of the substrate (W) in the reaction chamber (11). The substrate (W) is kept cooled while the organic material is being deposited. The film-forming gas (g2) is transported and fed into the reaction chamber (11) by using a carrier gas, such as an inert gas (g1). The deposition of the organic material is repeated so that films differing in composition are formed one over another.

摘要翻译： 一种在基底表面形成具有均匀质量的有机薄膜而不发热的方法。 该方法包括蒸发有机材料的单一成膜组分，从而放出成膜气体（g 2），将成膜气体（g 2）输送并进料到反应室（11）中，其中基板 （W），并且在保持成膜组分的同时将有机材料沉积在反应室（11）中的基板（W）的表面上。 在沉积有机材料的同时保持基板（W）的冷却。 成膜气体（g 2）通过使用载气如惰性气体（g 1）输送并送入反应室（11）。 重复有机材料的沉积，使得组成不同的膜彼此形成。

公开(公告)号：US20050040408A1

公开(公告)日：2005-02-24

申请号：US10917900

申请日：2004-08-13

申请人： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

发明人： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

IPC分类号： H01S5/343 ,  H01L27/15 ,  H01S5/042 ,  H01S5/183 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32

CPC分类号： B82Y20/00 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34306 ,  H01S5/34366 ,  Y10S438/935

摘要： For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.

摘要翻译： 为了制造具有优异特性和长寿命的长波长半导体发光器件，在层的生长期间中断III族元素的源材料的供给时，与As的源材料一起提供高反应性气体 （GaAs光导层）在活性层前面或刚好在活性层生长之前。 高反应性气体可以是二甲基肼或氨（NH 3）。

公开(公告)号：US08030109B2

公开(公告)日：2011-10-04

申请号：US12540609

申请日：2009-08-13

申请人： Yasuo Sato ,  Jugo Mitomo ,  Mikihiro Yokozeki ,  Tomonori Hino ,  Hironobu Narui

发明人： Yasuo Sato ,  Jugo Mitomo ,  Mikihiro Yokozeki ,  Tomonori Hino ,  Hironobu Narui

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01S5/22 ,  H01S5/3235 ,  H01S5/343

摘要： A semiconductor light emitting device capable of realizing a long life, and a method of manufacturing the same. The impurity concentration of hydrogen in the active layer is 3×1019 cm−3 or less, and the impurity concentration of aluminum in the active layer is 1×1018 cm−3 or less. Thereby, the operating current is inhibited from increasing, and a long life can be realized.

摘要翻译： 能够实现长寿命的半导体发光元件及其制造方法。 活性层中的氢的杂质浓度为3×10 19 cm -3以下，活性层中的铝的杂质浓度为1×1018cm -3以下。 由此，能够抑制工作电流的增加，能够实现长寿命化。

公开(公告)号：US07332744B2

公开(公告)日：2008-02-19

申请号：US10983927

申请日：2004-11-08

申请人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

发明人： Tomonori Hino ,  Hironobu Narui ,  Takayuki Kawasumi ,  Tsuyoshi Nagatake ,  Yuichi Kuromizu ,  Tadahiko Kawasaki ,  Noriko Kobayashi ,  Masaki Shiozaki ,  Jugo Mitomo ,  Michiko Komine

IPC分类号： H01L27/15 ,  H01S5/00

CPC分类号： B82Y20/00 ,  H01L33/145 ,  H01S5/0021 ,  H01S5/22 ,  H01S5/2215 ,  H01S5/2231 ,  H01S5/34326 ,  H01S2301/14 ,  H01S2301/18

摘要： A semiconductor light-emitting device capable of improving device characteristics such as life and reliability is provided. A current confinement layer includes a non-oxidized region made of AlAs or the like corresponding to a current injection region in an active layer, and an oxidized region made of aluminum oxide corresponding to a non-current injection region. The oxidized region is formed by forming a non-oxidized layer made of AlAs or the like and then oxidizing part of the non-oxidized layer at a temperature from 240° C. to less than 375° C. The thickness of the oxidized region is preferably from 10 nm to 1000 nm. The width of the one side of the oxidized region is one time or more of the width of the non-oxidized region or seven times or less thereof The distance between current confinement layer and the active layer is preferably 50 nm or more, or 500 nm or less, and more preferably 180 nm or more.

摘要翻译： 提供能够提高诸如寿命和可靠性的器件特性的半导体发光器件。 电流限制层包括对应于有源层中的电流注入区域的AlAs等构成的非氧化区域和对应于非电流注入区域的氧化铝制成的氧化区域。 通过形成由AlAs等构成的非氧化层，然后在240℃至小于375℃的温度下氧化未氧化层的部分形成氧化区域。氧化区域的厚度为 优选为10nm〜1000nm。 氧化区域的一侧的宽度为非氧化区域的宽度的一倍以上或其以上的七倍以下。电流限制层与有源层之间的距离优选为50nm以上或500nm以下 以下，更优选为180nm以上。

公开(公告)号：US07026183B2

公开(公告)日：2006-04-11

申请号：US10917900

申请日：2004-08-13

申请人： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

发明人： Tomonori Hino ,  Hironobu Narui ,  Jugo Mitomo

IPC分类号： H01L21/00

CPC分类号： B82Y20/00 ,  H01L33/32 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/2201 ,  H01S5/2214 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/34306 ,  H01S5/34366 ,  Y10S438/935

摘要： For manufacturing a long-wavelength semiconductor light emitting device having excellent characteristics and long lifetime, a highly reactive gas is supplied together with a source material of As while the supply of a source material of a group III element is interrupted during the growth of a layer (GaAs optical guide layer) anteriorly adjacent to the active layer or immediately before the growth of the active layer. The highly reactive gas may be di-methyl hydrazine or ammonia (NH3), for example.

摘要翻译： 为了制造具有优异特性和长寿命的长波长半导体发光器件，在层的生长期间中断III族元素的源材料的供给时，与As的源材料一起提供高反应性气体 （GaAs光导层）在活性层前面或刚好在活性层生长之前。 高反应性气体可以是例如二甲基肼或氨（NH 3）。