公开(公告)号：US20110241661A1

公开(公告)日：2011-10-06

申请号：US13060138

申请日：2010-12-16

申请人： Tsuyoshi Nomura ,  Takamasa Ohira ,  Nobuaki Mitamura ,  Masahide Natori ,  Tohru Ueda ,  Ichiro Joko ,  Hidenobu Magami

发明人： Tsuyoshi Nomura ,  Takamasa Ohira ,  Nobuaki Mitamura ,  Masahide Natori ,  Tohru Ueda ,  Ichiro Joko ,  Hidenobu Magami

IPC分类号： G01R33/12

CPC分类号： G01N27/9046 ,  F16C19/52 ,  G01M13/04 ,  G05B23/0237 ,  G05B2219/24065 ,  G05B2219/24075 ,  Y02P90/14 ,  Y02P90/20

摘要： A bearing residual life prediction method, a bearing residual life diagnostic apparatus and a bearing diagnostic system can be provided. The bearing diagnostic system 20 includes: an eddy current tester 11 that measures the impedance X of a certain portion of a bearing 24 before and after the use of the bearing; a bearing information transmitter 30 that transmits bearing information s1 containing the impedance X; and a bearing information receiver 31 that receives the information; a diagnostic section 12 that obtains the residual life information s2 of the bearing 24 based on the received impedance X; and a life information transmitter 36 that transmits the residual life information s2; and a life information receiver 40 that receives the information. Hence, the bearing used by the user can be inspected nondestructively, and the residual life of the bearing can be predicted.

摘要翻译： 可以提供轴承残余寿命预测方法，轴承残余寿命诊断装置和轴承诊断系统。 轴承诊断系统20包括：涡流测试器11，其在轴承使用前后测量轴承24的某一部分的阻抗X; 传送包含阻抗X的承载信息s1的轴承信息发送器30; 和承载信息的承载信息接收器31; 诊断部分12，基于接收到的阻抗X获得轴承24的剩余寿命信息s2; 以及发送剩余寿命信息s2的生命信息发送器36; 以及接收信息的生命信息接收器40。 因此，用户使用的轴承可以非破坏性地检查，并且可以预测轴承的剩余寿命。

公开(公告)号：US08593138B2

公开(公告)日：2013-11-26

申请号：US13060138

申请日：2010-12-16

申请人： Tsuyoshi Nomura ,  Takamasa Ohira ,  Nobuaki Mitamura ,  Masahide Natori ,  Tohru Ueda ,  Ichiro Joko ,  Hidenobu Magami

发明人： Tsuyoshi Nomura ,  Takamasa Ohira ,  Nobuaki Mitamura ,  Masahide Natori ,  Tohru Ueda ,  Ichiro Joko ,  Hidenobu Magami

IPC分类号： G01R33/12 ,  G01N27/82 ,  G01N27/72

CPC分类号： G01N27/9046 ,  F16C19/52 ,  G01M13/04 ,  G05B23/0237 ,  G05B2219/24065 ,  G05B2219/24075 ,  Y02P90/14 ,  Y02P90/20

摘要： A bearing residual life prediction method, a bearing residual life diagnostic apparatus and a bearing diagnostic system can be provided. The bearing diagnostic system 20 includes: an eddy current tester 11 that measures the impedance X of a certain portion of a bearing 24 before and after the use of the bearing; a bearing information transmitter 30 that transmits bearing information s1 containing the impedance X; and a bearing information receiver 31 that receives the information; a diagnostic section 12 that obtains the residual life information s2 of the bearing 24 based on the received impedance X; and a life information transmitter 36 that transmits the residual life information s2; and a life information receiver 40 that receives the information. Hence, the bearing used by the user can be inspected nondestructively, and the residual life of the bearing can be predicted.

摘要翻译： 可以提供轴承残余寿命预测方法，轴承残余寿命诊断装置和轴承诊断系统。 轴承诊断系统20包括：涡流测试器11，其在轴承使用前后测量轴承24的某一部分的阻抗X; 传送包含阻抗X的承载信息s1的轴承信息发送器30; 和承载信息的承载信息接收器31; 诊断部分12，基于接收到的阻抗X获得轴承24的剩余寿命信息s2; 以及发送剩余寿命信息s2的生命信息发送器36; 以及接收信息的生命信息接收器40。 因此，用户使用的轴承可以非破坏性地检查，并且可以预测轴承的剩余寿命。

公开(公告)号：US06337259B1

公开(公告)日：2002-01-08

申请号：US09579440

申请日：2000-05-26

申请人： Tohru Ueda ,  Yasumori Fukushima ,  Yoshinori Higami

发明人： Tohru Ueda ,  Yasumori Fukushima ,  Yoshinori Higami

IPC分类号： H01L21322

CPC分类号： H01L29/66757 ,  H01L21/3226 ,  H01L29/78675

摘要： An amorphous silicon film is deposited on a quartz substrate, and a metal of Ni is introduced into the amorphous silicon film so that the amorphous silicon film is crystallized. Phosphorus is ion-implanted with an oxide pattern used as a mask. A heating process is performed in a nitrogen atmosphere, by which Ni is gettered. A heating process is performed in an O2 atmosphere, by which Ni is gettered into the oxide. Like this, by performing the first gettering in a non-oxidative atmosphere, the Ni concentration can be reduced to such a level that oxidation does not cause any increase of irregularities or occurrence of pinholes. Thus, in a second gettering, enough oxidation can be effected without minding any increase of irregularities and occurrence of pinholes, so that the Ni concentration can be reduced to an extremely low level. Also, a high-quality crystalline silicon film free from surface irregularities and pinholes can be obtained.

摘要翻译： 将非晶硅膜沉积在石英衬底上，将Ni的金属引入到非晶硅膜中，使得非晶硅膜结晶化。 用作为掩模的氧化物图案离子注入磷。 在氮气气氛中进行加热处理，Ni被吸收。 在O2气氛中进行加热处理，通过该加热处理将Ni吸收到氧化物中。 像这样，通过在非氧化性气氛中进行第一吸气，可以将Ni浓度降低到氧化不引起不规则性增加或针孔发生的程度。 因此，在第二吸气中，可以实现足够的氧化，而不会引起不规则性的增加和针孔的发生，使得Ni浓度可以降低到非常低的水平。 此外，可以获得没有表面凹凸和针孔的高品质结晶硅膜。

公开(公告)号：US5459254A

公开(公告)日：1995-10-17

申请号：US149943

申请日：1993-11-10

申请人： Toyofumi Yamaguchi ,  Takanori Miyashita ,  Shinji Sakata ,  Toichi Abiru ,  Akira Matsuda ,  Tohru Ueda ,  Kentaro Kogi

发明人： Toyofumi Yamaguchi ,  Takanori Miyashita ,  Shinji Sakata ,  Toichi Abiru ,  Akira Matsuda ,  Tohru Ueda ,  Kentaro Kogi

IPC分类号： C07H19/16 ,  C07H19/067

CPC分类号： C07H19/16 ,  Y02P20/55

摘要： The present invention relates to a novel compound represented by the following formula [I] which is useful as a synthetic intermediate of a 2-alkynyladenosine.The present invention also relates to a process for producing the compound and a process for producing a 2-alkynyladenosine [IV] by way of the compound.Further, the present invention relates to a 2-alkynyladenosine derivative represented by the following formula [V] having excellent storage stability and, to a method of storing the 2-alkynyladenosine in the form of that derivative. ##STR1## [I] A=a leaving group, [II] A=NH.sub.2,[V] A=NHR.sup.4,wherein R.sup.1 through R.sup.4 represent a hydrogen atom or a protective group, and n denotes an integer of 1 to 15, provided that R.sup.1 through R.sup.4 do not represent a hydrogen atom simultaneously.

摘要翻译： 本发明涉及可用作2-炔基腺苷合成中间体的下式[I]表示的新型化合物。 本发明还涉及该化合物的制备方法和通过该化合物制备2-炔基腺苷[Ⅳ]的方法。 此外，本发明涉及具有优异的储存稳定性的由下式[V]表示的2-炔基腺苷衍生物，以及以该衍生物的形式存储2-炔基腺苷的方法。 [I] A =离去基团，[II] A = NH 2，[V] A = NHR 4，其中R 1至R 4表示氢原子或保护基，n表示1至15的整数， R1至R4同时不表示氢原子。

公开(公告)号：US5126361A

公开(公告)日：1992-06-30

申请号：US702210

申请日：1991-05-15

申请人： Tohru Ueda ,  Akira Matsuda ,  Noriaki Minakawa ,  Takuma Sasaki ,  Yoshikazu Yanagi

发明人： Tohru Ueda ,  Akira Matsuda ,  Noriaki Minakawa ,  Takuma Sasaki ,  Yoshikazu Yanagi

IPC分类号： C07D233/90 ,  C07H19/052

CPC分类号： C07H19/052 ,  C07D233/90 ,  Y02P20/55

摘要： Disclosed are imidazole derivatives represented by formula [I]: ##STR1## wherein R is a hydrogen atom or ##STR2## wherein R.sup.2 is a hydrogen atom or a hydroxy protecting group, R.sup.2 protecting either a single hydroxy or two hydroxies together when R.sup.2 is a hydroxy protecting group, and R.sup.3 is a hydrogen atom or OR.sup.2 ; A is CONH.sub.2 or CN; and R.sup.1 is a hydrogen atom, lower alkyl, hydroxy lower alkyl, or phenyl.Also disclosed are six processes for producing these novel compounds among which a typical process comprises reacting a starting imidazole compound having a halogen at the 5-position thereof with an acetylene derivative to alkynylate the 5-position.Furthermore, the compounds have remarkable antitumor activities and therefore can provide novel antitumor agents.

公开(公告)号：US5026835A

公开(公告)日：1991-06-25

申请号：US447512

申请日：1989-12-07

申请人： Tohru Ueda ,  Takuma Sasaki ,  Akira Matsuda ,  Takanori Miyashita ,  Shinji Sakata ,  Keiji Yamagami ,  Akihiro Fujii

发明人： Tohru Ueda ,  Takuma Sasaki ,  Akira Matsuda ,  Takanori Miyashita ,  Shinji Sakata ,  Keiji Yamagami ,  Akihiro Fujii

IPC分类号： C07H19/06

CPC分类号： C07H19/06

摘要： Pyrimidine 2'-deoxy-2'-methylidene nucleoside compounds: ##STR1## wherein R.sup.1 represents amino, hydroxy, silylamino, silyloxy, acylamino or acyloxy; R.sup.2 represents hydrogen, halogen, a lower alkyl, a lower alkenyl, a lower alkynyl or haloalkyl; R.sup.3 and R.sup.4 represent the same or different hydrogen, silyl, acyl or aminoacyl, or a pharmaceutically acceptable salt or hydrate thereof, except that R.sup.1 is amino or hydroxy, and both of R.sup.3 and R.sup.4 are hydrogen.Said compounds possess excellent antitumor and antiviral activities, thus providing novel anticancer and antiviral agent.

公开(公告)号：US07129521B2

公开(公告)日：2006-10-31

申请号：US10406591

申请日：2003-04-04

申请人： Hiroshi Shibata ,  Osamu Nakamura ,  Shunichi Naka ,  Tohru Ueda

发明人： Hiroshi Shibata ,  Osamu Nakamura ,  Shunichi Naka ,  Tohru Ueda

IPC分类号： H01L29/04 ,  H01L29/15

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/1214 ,  H01L27/1274 ,  H01L29/04 ,  H01L29/66757

摘要： The problem is to provide a technology to reduce a light leakage current in order to obtain a good display. One kind or plurality kinds of elements chosen from argon, germanium, silicon, helium, neon, krypton, and xenon are implanted in a crystalline semiconductor layer, to distribute crystal defects due to the aforementioned element implantation by uniform and suitable density in the semiconductor film, making recombination centers of carriers, to thereby suppress alight sensitivity without spoiling a high degree of carrier movement included in a crystalline semiconductor layer.

摘要翻译： 问题在于提供减少漏光电流的技术，以获得良好的显示。 将选自氩，锗，硅，氦，氖，氪和氙的一种或多种元素注入晶体半导体层中，以通过均匀且适当的密度在半导体膜中分配由于上述元素注入引起的晶体缺陷 ，使载流子的复合中心，从而抑制光敏灵敏度而不破坏包括在晶体半导体层中的高度的载流子移动。

公开(公告)号：US06927809B2

公开(公告)日：2005-08-09

申请号：US10694506

申请日：2003-10-27

申请人： Masahito Gotoh ,  Tohru Ueda ,  Yoshinori Higami

发明人： Masahito Gotoh ,  Tohru Ueda ,  Yoshinori Higami

IPC分类号： G02F1/1335 ,  G02F1/133 ,  G02F1/1362 ,  G02F1/1368 ,  G09F9/30 ,  H01L27/12 ,  H01L27/13 ,  H01L29/786 ,  G02F1/136

CPC分类号： G02F1/136209 ,  G02F1/136213 ,  G02F1/136227 ,  G02F2201/40 ,  H01L27/1255 ,  H01L29/78633

摘要： The active matrix substrate of the invention includes: a storage capacitor formed on a board; a first insulating layer formed on the storage capacitor; a semiconductor layer formed above the storage capacitor via the first insulating layer: a gate insulating layer formed on the semiconductor layer; a gate electrode layer including a gate electrode formed above the semiconductor layer via the gate insulating layer; a second insulating layer covering the gate electrode layer and the semiconductor layer; a first light-shielding layer formed above the semiconductor layer via the second insulating layer to cover at least a channel region of the semiconductor layer; a third insulating layer formed on the first light-shielding layer; a source electrode layer including source and drain electrodes formed on the third insulating layer; a fourth insulating layer formed on the source electrode layer; and a pixel electrode formed on the fourth insulating layer and electrically connected to the drain electrode. The first light-shielding layer is conductive and has a drain-side light-shielding portion electrically connected to one of a pair of electrodes of the storage capacitor and also to the drain electrode.

摘要翻译： 本发明的有源矩阵基板包括：形成在板上的存储电容器; 形成在所述存储电容器上的第一绝缘层; 半导体层，其经由所述第一绝缘层形成在所述存储电容器的上方;形成在所述半导体层上的栅极绝缘层; 栅极电极层，包括经由所述栅极绝缘层形成在所述半导体层上方的栅电极; 覆盖所述栅电极层和所述半导体层的第二绝缘层; 第一遮光层，其经由所述第二绝缘层形成在所述半导体层上方以覆盖所述半导体层的至少沟道区域; 形成在所述第一遮光层上的第三绝缘层; 源电极层，包括形成在所述第三绝缘层上的源极和漏极; 形成在所述源电极层上的第四绝缘层; 以及形成在第四绝缘层上并与漏电极电连接的像素电极。 第一遮光层是导电的，并且具有电连接到存储电容器的一对电极中的一个以及漏极电极的漏极侧遮光部分。

公开(公告)号：US06639245B2

公开(公告)日：2003-10-28

申请号：US10120981

申请日：2002-04-11

申请人： Masahito Gotoh ,  Tohru Ueda

发明人： Masahito Gotoh ,  Tohru Ueda

IPC分类号： H01L29786

CPC分类号： H01L27/12 ,  G02F1/13454 ,  H01L21/0242 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277

摘要： An a-Si film 12 is formed on the whole surface of a quartz substrate 11, and a protection film 13 is formed in a region to be used as a display unit on the a-Si film 12. Subsequently, after a catalyst metal is selectively introduced into the whole surface of a region to be used as a peripheral drive circuit on the a-Si film 12, crystal growth is allowed by heating the a-Si film 12 to form a CG silicon film 14 and a p-Si film 15. Then, the catalyst metal in the CG silicon film 14 and the p-Si film 15 is removed by gettering. The concentration of the catalyst metal in the CG silicon film 14 is in the range of 1×1013 atoms/cm13 or higher and lower than 1×1015 atoms/cm3. The concentration of the catalyst metal in the p-Si film for a display unit 15 is made lower than the concentration of the catalyst metal in the CG silicon film 14b for a peripheral drive circuit. Thereby, a semiconductor device having a driver monolithic type liquid crystal display device with high intensity, high precision and uniform characteristics can be achieved.

摘要翻译： 在石英衬底11的整个表面上形成a-Si膜12，并且在a-Si膜12上用作显示单元的区域中形成保护膜13.接着，在催化剂金属为 选择性地引入到用作a-Si膜12上的外围驱动电路的区域的整个表面上，通过加热a-Si膜12以形成CG硅膜14和p-Si膜，允许晶体生长 然后，通过吸气除去CG硅膜14和p-Si膜15中的催化剂金属。 CG硅膜14中的催化剂金属的浓度在1×10 13原子/ cm 3以上且低于1×10 15原子/ cm 3的范围内。 使用于显示单元15的p-Si膜中的催化剂金属的浓度低于用于外围驱动电路的CG硅膜14b中的催化剂金属的浓度。 因此，可以实现具有高强度，高精度和均匀特性的驱动器单片型液晶显示装置的半导体器件。

公开(公告)号：US06346436B1

公开(公告)日：2002-02-12

申请号：US09493627

申请日：2000-01-28

申请人： Yasumori Fukushima ,  Tohru Ueda ,  Kunio Kamimura

发明人： Yasumori Fukushima ,  Tohru Ueda ,  Kunio Kamimura

IPC分类号： H01L2100

CPC分类号： B82Y20/00 ,  B82Y10/00 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02603 ,  H01L21/0262 ,  H01L21/02639 ,  H01L29/66439 ,  H01L33/06 ,  H01L33/08 ,  H01S5/341 ,  Y10S438/962

摘要： A nanometer-size quantum thin line is formed on a semiconductor substrate of a Si substrate or the like by means of the general film forming technique, lithographic technique and etching technique. By opportunely using the conventional film forming technique, photolithographic technique and etching technique, a second oxide film that extends in the perpendicular direction is formed on an Si substrate. Then, by removing the second oxide film that extends in the perpendicular direction, a second nitride film located below the film and a first oxide film located below the film by etching, a groove for exposing the Si substrate is formed. Then, a Si thin line is made to epitaxially grow on the exposed portion of the Si substrate. The quantum thin line is thus formed without using any special fine processing technique. The width of the groove can be accurately controlled in nanometers by controlling the film thickness of the second oxide film that is formed by oxidizing the surface of the second nitride film.

摘要翻译： 通过一般的成膜技术，光刻技术和蚀刻技术，在Si衬底等的半导体衬底上形成纳米尺寸量子细线。 通过适当地使用传统的成膜技术，光刻技术和蚀刻技术，在Si衬底上形成沿垂直方向延伸的第二氧化膜。 然后，通过除去沿垂直方向延伸的第二氧化物膜，通过蚀刻位于膜下方的第二氮化物膜和位于膜下方的第一氧化物膜，形成用于暴露Si衬底的沟槽。 然后，使Si细线在Si衬底的暴露部分上外延生长。 因此在不使用任何特殊的精细加工技术的情况下形成量子细线。 通过控制通过氧化第二氮化物膜的表面而形成的第二氧化膜的膜厚，能够以纳米的形式精确地控制槽的宽度。