公开(公告)号：US20140091469A1

公开(公告)日：2014-04-03

申请号：US13630500

申请日：2012-09-28

申请人： Vinodhkumar Raghunathan ,  Ebrahim Andideh

发明人： Vinodhkumar Raghunathan ,  Ebrahim Andideh

IPC分类号： H01L21/768 ,  H01L23/498

CPC分类号： H01L21/02271 ,  H01L21/02123 ,  H01L21/0214 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02263 ,  H01L21/02274 ,  H01L21/4857 ,  H01L21/76802 ,  H01L21/76831 ,  H01L21/76877 ,  H01L23/49822 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/5389 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of forming a microelectronic packaging structure and associated structures formed thereby are described. Those methods may include forming a CVD dielectric material on a package dielectric material, and then forming a conductive material on the CVD dielectric material.

摘要翻译： 描述了形成微电子封装结构的方法及由此形成的相关结构。 那些方法可以包括在封装电介质材料上形成CVD电介质材料，然后在CVD电介质材料上形成导电材料。

公开(公告)号：US07800203B2

公开(公告)日：2010-09-21

申请号：US12215622

申请日：2008-06-27

申请人： Michael J. Leeson ,  Ebrahim Andideh

发明人： Michael J. Leeson ,  Ebrahim Andideh

IPC分类号： H01L21/4763

CPC分类号： H01L21/0212 ,  H01L21/02282 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/76801 ,  Y10S438/964

摘要： According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. A puddle of smoothing solvent is then allowed to stand on the wafer. The smoothing solvent is then removed. After the smoothing solvent is removed, the polymeric layer has a reduced surface roughness. A second metal stack is then formed on the polymeric layer and etched to form second metal lines.

摘要翻译： 根据本发明的一个方面，提供了一种构造存储器阵列的方法。 在半导体晶片上形成绝缘层。 然后在绝缘层上形成第一金属叠层并蚀刻以形成第一金属线。 在第一金属线和绝缘层之上形成聚合物层。 然后将平滑溶剂的水坑放置在晶片上。 然后除去平滑溶剂。 在除去平滑溶剂后，聚合物层的表面粗糙度降低。 然后在聚合物层上形成第二金属叠层并蚀刻以形成第二金属线。

公开(公告)号：US07396692B2

公开(公告)日：2008-07-08

申请号：US10713307

申请日：2003-11-14

申请人： Hitesh Windlass ,  Ebrahim Andideh ,  Daniel C. Diana

发明人： Hitesh Windlass ,  Ebrahim Andideh ,  Daniel C. Diana

IPC分类号： H01L21/312 ,  H01L21/47

CPC分类号： B82Y10/00 ,  G11C11/22

摘要： Methods for improving the net remnant polarization of a polymer memory cell are disclosed. In one embodiment, the polymer material is heated above the Curie temperature of the polymer material, and the domains of the polymer material are aligned with an externally applied electric field.

摘要翻译： 公开了改善聚合物存储单元净残余极化的方法。 在一个实施方案中，将聚合物材料加热到聚合物材料的居里温度以上，并且聚合物材料的区域与外部施加的电场对准。

公开(公告)号：US20070134818A1

公开(公告)日：2007-06-14

申请号：US11604948

申请日：2006-11-27

申请人： Michael Leeson ,  Ebrahim Andideh

发明人： Michael Leeson ,  Ebrahim Andideh

IPC分类号： H01L21/00

CPC分类号： H01L21/0212 ,  H01L21/02282 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/76801 ,  Y10S438/964

摘要： According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. A puddle of smoothing solvent is then allowed to stand on the wafer. The smoothing solvent is then removed. After the smoothing solvent is removed, the polymeric layer has a reduced surface roughness. A second metal stack is then formed on the polymeric layer and etched to form second metal lines.

公开(公告)号：US07164166B2

公开(公告)日：2007-01-16

申请号：US10804795

申请日：2004-03-19

申请人： Mark S. Isenberger ,  Ebrahim Andideh

发明人： Mark S. Isenberger ,  Ebrahim Andideh

IPC分类号： H01L29/76

CPC分类号： H01L27/11585 ,  H01L27/115 ,  H01L27/1159 ,  H01L29/78391

摘要： A memory circuit is provided with a spacer formed on a support surface and positioned adjacent to a first electrode surface of a first electrode. The memory circuit further includes a ferroelectric layer formed on the first electrode and the spacer.

摘要翻译： 存储器电路设置有形成在支撑表面上并且邻近第一电极的第一电极表面定位的间隔件。 存储电路还包括形成在第一电极和间隔物上的铁电层。

公开(公告)号：US20070003737A1

公开(公告)日：2007-01-04

申请号：US11173608

申请日：2005-06-30

申请人： Rami Khalaf ,  Ebrahim Andideh ,  Caroline Merrill

发明人： Rami Khalaf ,  Ebrahim Andideh ,  Caroline Merrill

IPC分类号： B32B3/00

CPC分类号： H01R13/03 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  Y10T428/24612

摘要： Polymer electronics devices having reliable electrical contacts and methods of their fabrication are described. A surface of a conductive layer is modified, and a layer of polymer is formed on a modified surface of the conductive layer to create an electrical contact between the conductive layer and the layer of polymer. The electrical contact is created without adding an adhesion promoter. Modifying the surface of the conductive layer increases surface area of conductive layer and therefore improves polymer to conductive layer adhesion while preserving an original chemistry of the surface of the conductive layer. The modified surface of the conductive layer may be formed by mechanical roughening, chemical roughening, or both. The conductive layer forming the electrical contact to the polymer includes a noble metal. The polymer may be spin coated over the modified surface of the conductive layer.

摘要翻译： 描述了具有可靠电接触的聚合物电子器件及其制造方法。 导电层的表面被改性，并且在导电层的改性表面上形成聚合物层，以在导电层和聚合物层之间产生电接触。 在不添加粘合促进剂的情况下产生电接触。 改进导电层的表面增加了导电层的表面积，因此改善了聚合物与导电层的粘合性，同时保持了导电层表面的原始化学性质。 导电层的改性表面可以通过机械粗糙化，化学粗糙化或两者形成。 形成与聚合物的电接触的导电层包括贵金属。 聚合物可以旋涂在导电层的改性表面上。

公开(公告)号：US20060105100A1

公开(公告)日：2006-05-18

申请号：US11304046

申请日：2005-12-15

申请人： Daniel Diana ,  Hitesh Windlass ,  William Hicks ,  Timothy Lanfri ,  Michael Deangelis ,  Ebrahim Andideh

发明人： Daniel Diana ,  Hitesh Windlass ,  William Hicks ,  Timothy Lanfri ,  Michael Deangelis ,  Ebrahim Andideh

IPC分类号： B05D5/12

CPC分类号： H01L27/285 ,  B82Y10/00 ,  G11C13/0014 ,  G11C13/0016 ,  H01L51/0021

摘要： An electrode layer for a polymer memory may be implanted to increase the number of defects in the material. As a result, that same material may be utilized for the upper and lower electrodes. In particular, defects may be introduced into a TiOx layer within the electrode to match the work functions of the upper and lower electrodes.

摘要翻译： 可以植入用于聚合物存储器的电极层以增加材料中的缺陷数量。 结果，可以使用相同的材​​料用于上电极和下电极。 特别地，可以将缺陷引入电极内的TiO 2层以匹配上电极和下电极的功函数。

公开(公告)号：US20050260415A1

公开(公告)日：2005-11-24

申请号：US11195226

申请日：2005-08-02

申请人： Ebrahim Andideh

发明人： Ebrahim Andideh

IPC分类号： H01L21/02 ,  B32B27/00

CPC分类号： H01L21/02 ,  Y10T428/3154

摘要： A technique to promote the adhesion and uniform distribution of a spin coated film upon a ferroelectric material. At least one embodiment of the invention uses a ferroelectric material, such as PVDF/TrFE, to promote the adhesion of a spin-coated film onto a wafer.

摘要翻译： 促进旋涂法在铁电材料上的粘合和均匀分布的技术。 本发明的至少一个实施方案使用诸如PVDF / TrFE之类的铁电材料来促进旋涂膜粘附在晶片上。

公开(公告)号：US20050247965A1

公开(公告)日：2005-11-10

申请号：US11184123

申请日：2005-07-18

申请人： Ebrahim Andideh

发明人： Ebrahim Andideh

IPC分类号： G11C11/22 ,  H01L21/82 ,  H01L27/108 ,  H01L27/115 ,  H01L29/72 ,  H01L29/76 ,  H01L31/119

CPC分类号： G11C11/22 ,  H01L27/11502 ,  H01L28/60

摘要： A ferroelectric memory device and a method of formation are disclosed. In one particular embodiment, a ferroelectric memory device comprises a first electrode layer formed on a substrate, a ferroelectric polymer layer formed on substantial portion of a first electrode layer, a thin layer of conductive ferroelectric polymer formed on a substantial portion of the ferroelectric polymer layer, where the ferroelectric polymer may be made conductive by doping with conductive nano-particles, and a second electrode layer formed on at least a portion of the carbon doped ferroelectric polymer layer.

公开(公告)号：US20050161827A1

公开(公告)日：2005-07-28

申请号：US11084638

申请日：2005-03-18

申请人： Ebrahim Andideh ,  Mark Bohr

发明人： Ebrahim Andideh ,  Mark Bohr

IPC分类号： H01L21/316 ,  H01L21/768 ,  H01L23/532 ,  H01L23/48 ,  H01L21/4763

CPC分类号： H01L21/76822 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/31633 ,  H01L21/76801 ,  H01L21/76807 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process for forming an interlayer dielectric layer is disclosed. The method comprises first forming a carbon-doped oxide (CDO) layer with a first concentration of carbon dopants therein. Next, the CDO layer is further formed with a second concentration of carbon dopants therein, wherein the first concentration is different than the second concentration.

摘要翻译： 公开了一种用于形成层间电介质层的工艺。 该方法包括首先在其中形成第一浓度的碳掺杂剂的碳掺杂氧化物（CDO）层。 接下来，CDO层进一步形成有第二浓度的碳掺杂剂，其中第一浓度不同于第二浓度。