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    AMPOULE SPLASH GUARD APPARATUS
    1.
    发明申请
    AMPOULE SPLASH GUARD APPARATUS 失效

    公开(公告)号：US20090114157A1

    公开(公告)日：2009-05-07

    申请号：US12331264

    申请日：2008-12-09

    申请人： WEI TI LEE ,  STEVE H. CHIAO

    发明人： WEI TI LEE ,  STEVE H. CHIAO

    IPC分类号： C23C16/44

    CPC分类号： C23C16/4482 ,  Y10S261/65

    摘要： Embodiments of the invention provide an apparatus for generating a precursor gas used in a vapor deposition process system. The apparatus contains a canister or an ampoule for containing a chemical precursor and a splash guard contained within the ampoule. The splash guard is positioned to obstruct the chemical precursor in a liquid state from being bumped or splashed into a gas outlet during the introduction of a carrier gas into the ampoule. The carrier gas is usually directed into the ampoule through a gas inlet and combines with the vaporized chemical precursor to form a precursor gas. The splash guard is also positioned to permit the passage of the precursor gas from the gas outlet. In one example, the gas outlet contains a stem with a tapered tip and the splash guard is positioned at an angle parallel to the plane of the tapered tip.

    摘要翻译： 本发明的实施例提供一种用于产生在气相沉积工艺系统中使用的前体气体的装置。 该装置包含用于容纳安瓿内的化学前体和防溅罩的罐或安瓿。 飞溅防护罩的定位是在将载气引入安瓿中时，阻止液态的化学前体被撞击或溅入气体出口。 载气通常通过气体入口引导到安瓿中，并与蒸发的化学前体结合以形成前体气体。 防溅罩也被定位成允许来自气体出口的前体气体通过。 在一个示例中，气体出口包含具有锥形尖端的杆，并且防溅罩以与锥形尖端的平面平行的角度定位。

    CHEMICAL VAPOR DEPOSITION OF RUTHENIUM FILMS CONTAINING OXYGEN OR CARBON
    2.
    发明申请
    CHEMICAL VAPOR DEPOSITION OF RUTHENIUM FILMS CONTAINING OXYGEN OR CARBON 审中-公开
    包含氧气或碳氢化合物的薄膜的化学气相沉积

    公开(公告)号：US20110312148A1

    公开(公告)日：2011-12-22

    申请号：US13155520

    申请日：2011-06-08

    申请人： HOON KIM ,  SANG-HYEOB LEE ,  SANG HO YU ,  WEI TI LEE ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA

    发明人： HOON KIM ,  SANG-HYEOB LEE ,  SANG HO YU ,  WEI TI LEE ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA

    IPC分类号： H01L21/02 ,  B82Y40/00

    CPC分类号： H01L28/65 ,  B82Y40/00 ,  C23C16/18 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76864 ,  H01L28/91

    摘要： Methods for depositing ruthenium-containing films are provided herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing film to an oxygen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the oxygen-containing gas exposed ruthenium-containing film may be annealed in a hydrogen-containing gas to remove at least some oxygen from the ruthenium-containing film. In some embodiments, the deposition, exposure, and annealing may be repeated to deposit the ruthenium-containing film to a desired thickness.

    摘要翻译： 本文提供了沉积含钌膜的方法。 在一些实施方案中，在基材上沉积含钌膜的方法可以包括使用含钌前驱体将沉积的含钌膜沉积在基板上， 并将沉积的含钌膜暴露于含氧气体中以从沉积的含钌膜中除去至少一些碳。 在一些实施方案中，含氧气体暴露的含钌膜可以在含氢气体中退火以从含钌膜中除去至少一些氧。 在一些实施例中，可以重复沉积，曝光和退火，以将含钌膜沉积到期望的厚度。

    ALUMINUM CONTACT INTEGRATION ON COBALT SILICIDE JUNCTION
    3.
    发明申请
    ALUMINUM CONTACT INTEGRATION ON COBALT SILICIDE JUNCTION 失效
    铝接点集成在钴硅酮结上

    公开(公告)号：US20090087983A1

    公开(公告)日：2009-04-02

    申请号：US12240816

    申请日：2008-09-29

    申请人： WEI TI LEE ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    发明人： WEI TI LEE ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

    IPC分类号： H01L21/44

    CPC分类号： H01L23/53214 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer. In one example, the method further provides forming the cobalt silicide layer by depositing a cobalt-containing layer on the silicon-containing surface, heating the substrate during a rapid thermal annealing (RTA) process, etching away any remaining portions of the cobalt-containing layer from the substrate, and subsequently heating the substrate during another RTA process.

    摘要翻译： 本文的实施方案提供了在钴硅化物结上形成铝接触的方法。 在一个实施例中，提供了一种在衬底上形成材料的方法，包括在硅化过程中在衬底的含硅表面上形成钴硅化物层，在等离子体工艺期间在硅化钴层上形成氟化升华膜， 将基板加热到升华温度以除去氟化升华膜，在硅化钴层上沉积含钛成核层，并在含钛成核层上沉积含铝材料。 在一个实例中，该方法还提供通过在含硅表面上沉积含钴层来形成钴硅化物层，在快速热退火（RTA）工艺中加热衬底，蚀刻掉含钴的剩余部分 层，然后在另一RTA工艺期间加热衬底。

    METHODS FOR FORMING BARRIER/SEED LAYERS FOR COPPER INTERCONNECT STRUCTURES
    4.
    发明申请
    METHODS FOR FORMING BARRIER/SEED LAYERS FOR COPPER INTERCONNECT STRUCTURES 有权
    用于形成用于铜互连结构的障碍物/种子层的方法

    公开(公告)号：US20120012465A1

    公开(公告)日：2012-01-19

    申请号：US13167001

    申请日：2011-06-23

    申请人： HOON KIM ,  WEI TI LEE ,  SANG HO YU ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA ,  SANG HYEOB LEE

    发明人： HOON KIM ,  WEI TI LEE ,  SANG HO YU ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA ,  SANG HYEOB LEE

    IPC分类号： C25D5/02

    CPC分类号： C25D5/02 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76831 ,  H01L21/76846 ,  H01L21/76864 ,  H01L21/76873 ,  H01L21/76898

    摘要： Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and bottom surface of the opening; and depositing a conductive material on the layer to fill the opening. In some embodiments, one of ruthenium (Ru) or cobalt (Co) is deposited on the sidewall and bottom surface of the opening. The materials may be deposited by chemical vapor deposition (CVD) or by physical vapor deposition (PVD).

    摘要翻译： 本文提供了用于形成用于互连结构的势垒/种子层的方法。 在一些实施方案中，一种处理基材的方法，所述基材具有形成在基材的第一表面中的开口，所述开口具有侧壁和底部表面，所述方法可以包括形成包含锰（Mn）和至少一种钌的层 （Ru）或钴（Co）在开口的侧壁和底表面上; 以及在所述层上沉积导电材料以填充所述开口。 在一些实施例中，钌（Ru）或钴（Co）之一沉积在开口的侧壁和底表面上。 材料可以通过化学气相沉积（CVD）或物理气相沉积（PVD）沉积。

    CHEMICAL VAPOR DEPOSITION (CVD) OF RUTHENIUM FILMS AND APPLICATIONS FOR SAME
    5.
    发明申请
    CHEMICAL VAPOR DEPOSITION (CVD) OF RUTHENIUM FILMS AND APPLICATIONS FOR SAME 审中-公开
    RUMEN膜的化学气相沉积（CVD）及其应用

    公开(公告)号：US20130146468A1

    公开(公告)日：2013-06-13

    申请号：US13314926

    申请日：2011-12-08

    申请人： HOON KIM ,  SANG HYEOB LEE ,  WEI TI LEE ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA ,  SANG HO YU

    发明人： HOON KIM ,  SANG HYEOB LEE ,  WEI TI LEE ,  SESHADRI GANGULI ,  HYOUNG-CHAN HA ,  SANG HO YU

    IPC分类号： C23C28/02 ,  C23C16/56 ,  B05D5/12 ,  C23C16/44

    CPC分类号： C23C16/18 ,  C23C16/40 ,  C23C16/56 ,  C23C28/02 ,  C23C28/023

    摘要： Methods for depositing ruthenium-containing films are disclosed herein. In some embodiments, a method of depositing a ruthenium-containing film on a substrate may include depositing a ruthenium-containing film on a substrate using a ruthenium-containing precursor, the deposited ruthenium-containing film having carbon incorporated therein; and exposing the deposited ruthenium-containing layer to a hydrogen-containing gas to remove at least some of the carbon from the deposited ruthenium-containing film. In some embodiments, the hydrogen-containing gas exposed ruthenium-containing film may be subsequently exposed to an oxygen-containing gas to at least one of remove at least some carbon from or add oxygen to the ruthenium-containing film. In some embodiments, the deposition and exposure to the hydrogen-containing gas and optionally, the oxygen-containing gas may be repeated to deposit the ruthenium-containing film to a desired thickness.

    摘要翻译： 本文公开了沉积含钌膜的方法。 在一些实施方案中，在基材上沉积含钌膜的方法可以包括使用含钌前驱体将沉积的含钌膜沉积在基板上， 并将沉积的含钌层暴露于含氢气体中以从沉积的含钌膜中除去至少一些碳。 在一些实施方案中，暴露含钌的含氟膜的膜随后可以暴露于含氧气体中至少一种，以将至少一些碳从氧钌中除去或添加至含钌膜。 在一些实施方案中，可以重复沉积和暴露于含氢气体和任选地含氧气体，以将含钌膜沉积到所需厚度。