摘要:
An input analog signal is sampled at a sampling frequency f.sub.s, which is four times a carrier frequency f.sub.c. A demultiplexer 11 outputs supplied data to four systems sequentially, and generates four zero carriers whose frequencies and amplitudes are equal to each other, with only the phases being different. The delay circuits 12 to 15 delay each one of the zero carriers, and supply delayed signals to adaptive filters 16 to 19. Data output from the four adaptive filters 16 to 19 are selected by a multiplexer 22, and the multiplexer 22 outputs the selected signals as a single signal. The difference between a first zero carrier and an output signals of the first adaptive filter 16 is obtained, and tap coefficients of the adaptive filters 16 to 19 are controlled in accordance with an LMS algorithm based on the difference. A signal output by the multiplexer 22 is output as a reproduced carrier.
摘要:
Constants {P.sub.b00i, Q.sub.b00j, . . . , P.sub.ak2i, Q.sub.ak2j, P.sub.ci, Q.sub.cj, P.sub.di, and Q.sub.dj } for calculating each of filter coefficients {a.sub.k1, a.sub.k2, b.sub.00, b.sub.k1, b.sub.k2, c and d} for a digital filter 15 by using non-linear polynomials for pass band position data x and pass band width data y are stored in a memory 13. The constants {P.sub.b00i, Q.sub.b00j, . . . , P.sub.ak2i, Q.sub.ak2j, P.sub.ci, Q.sub.cj, P.sub.di, and Q.sub.dj } are determined by using the least square method so that the sum of the square of the errors between the filter coefficients calculated by using non-liner polynomials and the filter coefficients of digital filter having known characteristics becomes the least or the minimum. A CPU 11 calculates the filter coefficients non-linearly by using the constants stored in the memory 13, and sets the results to the digital filter 15 when new pass band position data x or pass band width data y is input at knobs SC and SW.
摘要:
Data from an A/D converter is supplied to a fixed-point DSP. The fixed-point DSP adjusts the level of the data x so that computed results do not exceed .+-.1. In succession, for the i-th data x.sub.i, the fixed-point DSP computes cos .pi..multidot.x.sub.i when i=1, 5, . . . , -sin .pi..multidot.x.sub.i when i=2, 6, . . . , -cos .pi..multidot.x.sub.i when i=3, 7, . . . and sin .pi..multidot.x.sub.i when i=4, 8, . . . and outputs a digital phase modulated signal y(t) by outputting the computed results in order. Trigonometrical functions are computed by expanding them to a series so that the intermediate computed results do not exceed .+-.1.
摘要翻译:来自A / D转换器的数据被提供给定点DSP。 定点DSP调整数据x的电平,以便计算结果不超过+/- 1。 接下来,对于第i个数据xi,当i = 1,5时,定点DSP计算cos pi xxi。 。 。 当i = 2,6时,-sin pi xxi。 。 。 ,当i = 3,7时,-cos pi xxi。 。 。 当i = 4,8时,sin pi xxi。 。 。 并且通过按顺序输出计算结果来输出数字相位调制信号y(t)。 通过将三角函数扩展为一系列来计算,以便中间计算结果不超过+/- 1。
摘要:
Regarding a semiconductor device, a burn-in board can be standardized in each package. An IC (100) includes a VCC terminal (2), a GND terminal (3), input terminals (4a, 4b), and output terminals (5), and it also includes a burn-in board setting terminal (14). Input signals applied to the input terminals (4a, 4b) are transmitted to gates 16a and 16b of switching circuit (15) and processed in a function block (7). Regardless of the signals applied to the input terminals (4a, 4b), simply applying a test signal to the burn-in board setting terminal (14), a specified logic is applied to the function block (7). Only if a pin arrangement of the VCC terminal (2), the GND terminal (3), and the burn-in board setting terminal (14) is standardized and determined, burn-in can be performed indifferent of another pin arrangement of the input terminals (4a, 4b).
摘要:
A semiconductor memory device is constituted such that, when a first wiring layer provides a bit line of a first common complementary data line pair and a third wiring layer provides a bit line of a second common complementary data line pair, a second wiring layer makes an overlapped area between the bit line and the bit bar line of the second common complementary dada line pair equal to the bit line of the first common complementary data line pair and also an overlapped area between the bit line and the bit bar line of the first common complementary data line pair equal to the bit line of the second common complementary data line pair.
摘要:
A semiconductor memory device includes memory elements, each maintaining memory contents within a period of time during which a refresh operation is repeated, and a refresh request circuit for making a refresh request. The semiconductor memory device includes refreshing circuits each of which, in response to a refresh request from the refresh request circuit, performs a refresh operation on a different number of memory elements at the same time, and a selecting circuit for selecting one refreshing circuit from among the refreshing circuits according to the number of memory elements included in the semiconductor memory device. The refresh request circuit can change the interval at which it makes a refresh request.
摘要:
A smaller, high-speed, semiconductor memory device having redundancy is disclosed which attains an improved mass productivity. Where a main memory (20) includes a defective memory cell, a defective address designating circuit (21) stores the address of the defective memory cell. Defective address detecting circuits (22a to 22r) detect whether an address signal received at an address signal input terminal (4) coincides with an address signal from the defective address designating circuit (21). If a signal indicative of the coincidence is given to a redundancy memory circuit (23) from the defective address detecting circuits (22a to 22r), data is written in or read from defective address remedy latch circuit groups (23a to 23r) of the redundancy memory circuit (23) which correspond to the defective address detecting circuits (22a to 22r). A data selector (24) selectively outputs data received from the defective address remedy latch circuit groups (23a to 23r) or data received from the main memory (20). Thus, the redundancy memory circuit (23), which requires less space, quickly replaces the defective memory cell of the main memory (20).
摘要:
The present invention relates to providing the manufacturing method for a magnetic disk drive that includes the process steps of detecting and processing in a simplified way the defective sectors causing a reading error at low operating environmental temperatures. In one example, defective sectors are detected by read/write testing at high operating environmental temperatures from, for example, 40° C. to 65° C. Reading the data written on the defective sectors makes it obvious that the gain in a high-frequency band is reduced. After test data has been written onto each sector, the filtering coefficient of an FIR element that is set for a data-reading system is changed from the optimum value. The frequency gain is thus reduced. Next, the test data is read and the sectors that have caused a reading error are registered as defectives.
摘要:
A read and write control circuit receives (m×n))-bit data output m-bit parallel from a D flip flop, and a q-bit data selection signal such that the output data from the D flip flop is written to memory circuits in units of integral multiples of (x+1) bits in a total of 2q operations, in accordance with a binary value indicated by the data selection signal, where m, n, x and q indicates positive integers (x+1)>m and n>2q, where m, n, x and 1 indicate positive integers and (x+1)>m and n>2q. The data written to the memory circuits is read out in units of integral multiples of (x+1) bits in a total of 2q operations.
摘要:
A semiconductor device test board solves a problem with conventional test boards in that test results obtained through a burn-in procedure could be identified only before the test board is taken out of a burn-in oven. Hence, conventional test boards required additional steps for checking the test results after removing the test boards from the burn-in oven. This extra step prevents the efficiency of the test from being improved. One embodiment of the present test board has indicator arms, each rotatably mounted on a pivot on the test board, for indicating, in response to a signal on a signal line, the test result of the semiconductor device associated with it. Each of the indicator arms maintains its rest position when no failure has occurred in the semiconductor device associated with it during the test. Each indicator arm changes its position if a failure has occurred in the semiconductor device during the test, and retains one of the two positions until after the test board is taken out of the burn-in oven. Thus, the test result can be determined after taking out the test board from the burn-in oven.