Digital filter system, carrier reproduction circuit using the digital
filter system, and demodulation circuit using the carrier reproduction
circuit
    1.
    发明授权
    Digital filter system, carrier reproduction circuit using the digital filter system, and demodulation circuit using the carrier reproduction circuit 失效
    数字滤波器系统,使用数字滤波器系统的载波再现电路和使用载波再现电路的解调电路

    公开(公告)号:US5999574A

    公开(公告)日:1999-12-07

    申请号:US814879

    申请日:1997-03-13

    IPC分类号: H04B1/30 H04L27/00 H04L27/14

    摘要: An input analog signal is sampled at a sampling frequency f.sub.s, which is four times a carrier frequency f.sub.c. A demultiplexer 11 outputs supplied data to four systems sequentially, and generates four zero carriers whose frequencies and amplitudes are equal to each other, with only the phases being different. The delay circuits 12 to 15 delay each one of the zero carriers, and supply delayed signals to adaptive filters 16 to 19. Data output from the four adaptive filters 16 to 19 are selected by a multiplexer 22, and the multiplexer 22 outputs the selected signals as a single signal. The difference between a first zero carrier and an output signals of the first adaptive filter 16 is obtained, and tap coefficients of the adaptive filters 16 to 19 are controlled in accordance with an LMS algorithm based on the difference. A signal output by the multiplexer 22 is output as a reproduced carrier.

    摘要翻译: 输入模拟信号以采样频率fs进行采样,采样频率fs是载波频率fc的四倍。 解复用器11将提供的数据顺序地输出到四个系统,并且产生四个零载波,其频率和幅度彼此相等,只有相位不同。 延迟电路12至15延迟零载波中的每一个,并将延迟的信号提供给自适应滤波器16至19.从多路复用器22选择从四个自适应滤波器16至19输出的数据,并且多路复用器22输出所选择的信号 作为单个信号。 获得第一自适应滤波器16的第一零载波和输出信号之间的差异,并且根据基于该差的LMS算法来控制自适应滤波器16至19的抽头系数。 由复用器22输出的信号作为再现载波输出。

    Digital filter system
    2.
    发明授权
    Digital filter system 失效
    数字滤波系统

    公开(公告)号:US5856934A

    公开(公告)日:1999-01-05

    申请号:US827407

    申请日:1997-03-27

    IPC分类号: H03H17/02 G06F17/10

    CPC分类号: H03H17/0294

    摘要: Constants {P.sub.b00i, Q.sub.b00j, . . . , P.sub.ak2i, Q.sub.ak2j, P.sub.ci, Q.sub.cj, P.sub.di, and Q.sub.dj } for calculating each of filter coefficients {a.sub.k1, a.sub.k2, b.sub.00, b.sub.k1, b.sub.k2, c and d} for a digital filter 15 by using non-linear polynomials for pass band position data x and pass band width data y are stored in a memory 13. The constants {P.sub.b00i, Q.sub.b00j, . . . , P.sub.ak2i, Q.sub.ak2j, P.sub.ci, Q.sub.cj, P.sub.di, and Q.sub.dj } are determined by using the least square method so that the sum of the square of the errors between the filter coefficients calculated by using non-liner polynomials and the filter coefficients of digital filter having known characteristics becomes the least or the minimum. A CPU 11 calculates the filter coefficients non-linearly by using the constants stored in the memory 13, and sets the results to the digital filter 15 when new pass band position data x or pass band width data y is input at knobs SC and SW.

    摘要翻译: 常数{Pb00i,Qb00j,。 。 。 ,Pak2i,Qak2j,Pci,Qcj,Pdi和Qdj},用于通过使用用于通带位置的非线性多项式来计算数字滤波器15的滤波器系数{ak1,ak2,b00,bk1,bk2,c和d} 数据x和通带宽度数据y存储在存储器13中。常数{Pb00i,Qb00j,..., 。 。 ,Pak2i,Qak2j,Pci,Qcj,Pdi和Qdj}通过使用最小二乘法确定,使得通过使用非线性多项式计算的滤波器系数与数字滤波器的滤波器系数之间的误差的平方和之和 已知特征变得最小或最小。 CPU 11通过使用存储在存储器13中的常数非线性地计算滤波器系数,并且当在通过旋钮SC和SW处输入新的通带位置数据x或通带宽度数据y时,将结果设置为数字滤波器15。

    Digital phase modulator formed with a fixed-point digital signal
processor
    3.
    发明授权
    Digital phase modulator formed with a fixed-point digital signal processor 失效
    数字相位调制器用定点数字信号处理器形成

    公开(公告)号:US5831488A

    公开(公告)日:1998-11-03

    申请号:US801728

    申请日:1996-06-27

    IPC分类号: H03H17/02 H03C3/00 H04L27/20

    CPC分类号: H04L27/2092

    摘要: Data from an A/D converter is supplied to a fixed-point DSP. The fixed-point DSP adjusts the level of the data x so that computed results do not exceed .+-.1. In succession, for the i-th data x.sub.i, the fixed-point DSP computes cos .pi..multidot.x.sub.i when i=1, 5, . . . , -sin .pi..multidot.x.sub.i when i=2, 6, . . . , -cos .pi..multidot.x.sub.i when i=3, 7, . . . and sin .pi..multidot.x.sub.i when i=4, 8, . . . and outputs a digital phase modulated signal y(t) by outputting the computed results in order. Trigonometrical functions are computed by expanding them to a series so that the intermediate computed results do not exceed .+-.1.

    摘要翻译: 来自A / D转换器的数据被提供给定点DSP。 定点DSP调整数据x的电平,以便计算结果不超过+/- 1。 接下来,对于第i个数据xi,当i = 1,5时,定点DSP计算cos pi xxi。 。 。 当i = 2,6时,-sin pi xxi。 。 。 ,当i = 3,7时,-cos pi xxi。 。 。 当i = 4,8时,sin pi xxi。 。 。 并且通过按顺序输出计算结果来输出数字相位调制信号y(t)。 通过将三角函数扩展为一系列来计算,以便中间计算结果不超过+/- 1。

    Semiconductor wafer and method of manufacturing the same, and
semiconductor device and test board of the same
    4.
    发明授权
    Semiconductor wafer and method of manufacturing the same, and semiconductor device and test board of the same 失效
    半导体晶片及其制造方法,以及半导体器件及其测试板

    公开(公告)号:US6127694A

    公开(公告)日:2000-10-03

    申请号:US77926

    申请日:1993-06-18

    申请人: Michio Nakajima

    发明人: Michio Nakajima

    CPC分类号: G01R31/2856 G01R31/2884

    摘要: Regarding a semiconductor device, a burn-in board can be standardized in each package. An IC (100) includes a VCC terminal (2), a GND terminal (3), input terminals (4a, 4b), and output terminals (5), and it also includes a burn-in board setting terminal (14). Input signals applied to the input terminals (4a, 4b) are transmitted to gates 16a and 16b of switching circuit (15) and processed in a function block (7). Regardless of the signals applied to the input terminals (4a, 4b), simply applying a test signal to the burn-in board setting terminal (14), a specified logic is applied to the function block (7). Only if a pin arrangement of the VCC terminal (2), the GND terminal (3), and the burn-in board setting terminal (14) is standardized and determined, burn-in can be performed indifferent of another pin arrangement of the input terminals (4a, 4b).

    摘要翻译: 关于半导体器件,可以在每个封装中标准化老化板。 IC(100)包括VCC端子(2),GND端子(3),输入端子(4a,4b)和输出端子(5),并且还包括老化板设置端子(14)。 施加到输入端子(4a,4b)的输入信号被传送到开关电路(15)的门16a和16b,并在功能块(7)中进行处理。 无论施加到输入端子(4a,4b)的信号如何,只需将测试信号施加到老化板设置端子(14),就将功能块(7)施加指定的逻辑。 只有当VCC端子(2),GND端子(3)和老化板设置端子(14)的引脚布置被标准化和确定时,可以对输入的另一引脚布置无任何老化 端子(4a,4b)。

    Semiconductor memory device having improved bit line structure
    5.
    发明授权
    Semiconductor memory device having improved bit line structure 失效
    具有改进的位线结构的半导体存储器件

    公开(公告)号:US5973953A

    公开(公告)日:1999-10-26

    申请号:US38278

    申请日:1998-03-11

    CPC分类号: G11C5/063

    摘要: A semiconductor memory device is constituted such that, when a first wiring layer provides a bit line of a first common complementary data line pair and a third wiring layer provides a bit line of a second common complementary data line pair, a second wiring layer makes an overlapped area between the bit line and the bit bar line of the second common complementary dada line pair equal to the bit line of the first common complementary data line pair and also an overlapped area between the bit line and the bit bar line of the first common complementary data line pair equal to the bit line of the second common complementary data line pair.

    摘要翻译: 半导体存储器件被构造成使得当第一布线层提供第一公共互补数据线对的位线并且第三布线层提供第二公共互补数据线对的位线时,第二布线层使得 第二公共互补数据线对的位线和位线之间的重叠区域等于第一公共互补数据线对的位线,以及第一公共补充数据线对的位线和位线之间的重叠区域 互补数据线对等于第二公共互补数据线对的位线。

    Semiconductor memory device and method of refreshing semiconductor
memory device
    6.
    发明授权
    Semiconductor memory device and method of refreshing semiconductor memory device 失效
    半导体存储器件和刷新半导体存储器件的方法

    公开(公告)号:US5926429A

    公开(公告)日:1999-07-20

    申请号:US199050

    申请日:1998-11-24

    IPC分类号: G11C11/406 G11C7/00

    CPC分类号: G11C11/406

    摘要: A semiconductor memory device includes memory elements, each maintaining memory contents within a period of time during which a refresh operation is repeated, and a refresh request circuit for making a refresh request. The semiconductor memory device includes refreshing circuits each of which, in response to a refresh request from the refresh request circuit, performs a refresh operation on a different number of memory elements at the same time, and a selecting circuit for selecting one refreshing circuit from among the refreshing circuits according to the number of memory elements included in the semiconductor memory device. The refresh request circuit can change the interval at which it makes a refresh request.

    摘要翻译: 半导体存储器件包括存储器元件,每个存储器元件在重复刷新操作的时间段内保持存储器内容,以及刷新请求电路。 半导体存储器件包括刷新电路,每个刷新电路响应于来自刷新请求电路的刷新请求同时对不同数量的存储器元件执行刷新操作,以及选择电路,用于从其中选择一个刷新电路 根据包括在半导体存储器件中的存储元件的数量的刷新电路。 刷新请求电路可以改变刷新请求的间隔。

    Semiconductor memory device
    7.
    发明授权
    Semiconductor memory device 失效
    半导体存储器件

    公开(公告)号:US5353253A

    公开(公告)日:1994-10-04

    申请号:US126636

    申请日:1993-09-27

    申请人: Michio Nakajima

    发明人: Michio Nakajima

    CPC分类号: G11C29/76

    摘要: A smaller, high-speed, semiconductor memory device having redundancy is disclosed which attains an improved mass productivity. Where a main memory (20) includes a defective memory cell, a defective address designating circuit (21) stores the address of the defective memory cell. Defective address detecting circuits (22a to 22r) detect whether an address signal received at an address signal input terminal (4) coincides with an address signal from the defective address designating circuit (21). If a signal indicative of the coincidence is given to a redundancy memory circuit (23) from the defective address detecting circuits (22a to 22r), data is written in or read from defective address remedy latch circuit groups (23a to 23r) of the redundancy memory circuit (23) which correspond to the defective address detecting circuits (22a to 22r). A data selector (24) selectively outputs data received from the defective address remedy latch circuit groups (23a to 23r) or data received from the main memory (20). Thus, the redundancy memory circuit (23), which requires less space, quickly replaces the defective memory cell of the main memory (20).

    摘要翻译: 公开了具有冗余的较小的高速半导体存储器件,其具有提高的批量生产率。 在主存储器(20)包括缺陷存储单元的情况下,缺陷地址指定电路(21)存储有缺陷存储单元的地址。 检测地址检测电路(22a〜22r)是否检测到在地址信号输入端子(4)接收到的地址信号是否与来自缺陷地址指定电路(21)的地址信号一致。 如果从缺陷地址检测电路(22a〜22r)向冗余存储电路(23)发出了表示一致的信号,则将数据写入冗余存储电路(23)至缺陷地址补救锁存电路组(23a〜23r) 存储电路(23),其对应于缺陷地址检测电路(22a〜22r)。 数据选择器(24)选择性地输出从缺陷地址补救锁存电路组(23a至23r)接收的数据或从主存储器(20)接收的数据。 因此,需要较少空间的冗余存储器电路(23)快速地替换主存储器(20)的有缺陷的存储单元。

    Manufacturing method for magnetic disk drive
    8.
    发明授权
    Manufacturing method for magnetic disk drive 失效
    磁盘驱动器的制造方法

    公开(公告)号:US07661187B2

    公开(公告)日:2010-02-16

    申请号:US11295206

    申请日:2005-12-05

    IPC分类号: G11B5/127 H04R31/00

    摘要: The present invention relates to providing the manufacturing method for a magnetic disk drive that includes the process steps of detecting and processing in a simplified way the defective sectors causing a reading error at low operating environmental temperatures. In one example, defective sectors are detected by read/write testing at high operating environmental temperatures from, for example, 40° C. to 65° C. Reading the data written on the defective sectors makes it obvious that the gain in a high-frequency band is reduced. After test data has been written onto each sector, the filtering coefficient of an FIR element that is set for a data-reading system is changed from the optimum value. The frequency gain is thus reduced. Next, the test data is read and the sectors that have caused a reading error are registered as defectives.

    摘要翻译: 本发明涉及提供一种用于磁盘驱动器的制造方法,其包括以简单的方式检测和处理在低操作环境温度下引起读取误差的缺陷扇区的处理步骤。 在一个示例中,通过在例如40℃至65℃的高工作环境温度下的读/写测试来检测缺陷扇区。读取在缺陷扇区上写入的数据使得显而易见的是, 频带减少。 在将测试数据写入每个扇区之后,将为数据读取系统设置的FIR元件的滤波系数从最佳值改变。 频率增益因此降低。 接下来,读取测试数据,并将引起读取错误的扇区注册为缺陷。

    Integrated circuit with efficient testing arrangement
    9.
    发明授权
    Integrated circuit with efficient testing arrangement 失效
    具有高效测试布置的集成电路

    公开(公告)号:US06345005B2

    公开(公告)日:2002-02-05

    申请号:US09734925

    申请日:2000-12-13

    IPC分类号: G11C700

    CPC分类号: G11C29/38

    摘要: A read and write control circuit receives (m×n))-bit data output m-bit parallel from a D flip flop, and a q-bit data selection signal such that the output data from the D flip flop is written to memory circuits in units of integral multiples of (x+1) bits in a total of 2q operations, in accordance with a binary value indicated by the data selection signal, where m, n, x and q indicates positive integers (x+1)>m and n>2q, where m, n, x and 1 indicate positive integers and (x+1)>m and n>2q. The data written to the memory circuits is read out in units of integral multiples of (x+1) bits in a total of 2q operations.

    摘要翻译: 读/写控制电路接收(mxn)) - 从D触发器并行输出m位的位数据和q位数据选择信号,使得来自D触发器的输出数据以单位写入存储器电路 根据由数据选择信号表示的二进制值,在总共2q个运算中的(x + 1)位的整数倍的整数倍,其中m,n,x和q表示正整数(x + 1)> m和n > 2q,其中m,n,x和1表示正整数,(x + 1)> m且n> 2q。 写入存储器电路的数据以总共2q个操作的(x + 1)位的整数倍为单位读出。

    Semiconductor device test board and method for evaluating semiconductor
devices
    10.
    发明授权
    Semiconductor device test board and method for evaluating semiconductor devices 失效
    半导体器件测试板和半导体器件评估方法

    公开(公告)号:US6114866A

    公开(公告)日:2000-09-05

    申请号:US18445

    申请日:1998-02-04

    CPC分类号: G01R31/2863 H01L2924/0002

    摘要: A semiconductor device test board solves a problem with conventional test boards in that test results obtained through a burn-in procedure could be identified only before the test board is taken out of a burn-in oven. Hence, conventional test boards required additional steps for checking the test results after removing the test boards from the burn-in oven. This extra step prevents the efficiency of the test from being improved. One embodiment of the present test board has indicator arms, each rotatably mounted on a pivot on the test board, for indicating, in response to a signal on a signal line, the test result of the semiconductor device associated with it. Each of the indicator arms maintains its rest position when no failure has occurred in the semiconductor device associated with it during the test. Each indicator arm changes its position if a failure has occurred in the semiconductor device during the test, and retains one of the two positions until after the test board is taken out of the burn-in oven. Thus, the test result can be determined after taking out the test board from the burn-in oven.

    摘要翻译: 半导体器件测试板解决了常规测试板的问题,因为只有在将测试板从老化炉中取出之前,才能识别通过烧录程序获得的测试结果。 因此,常规测试板需要额外的步骤,以便在从老化炉中取出测试板后检查测试结果。 这个额外的步骤可以防止测试的效率得到改善。 本测试板的一个实施例具有指示臂,每个指示臂可旋转地安装在测试板上的枢轴上,用于响应于信号线上的信号,指示与其相关联的半导体器件的测试结果。 当在测试期间与其相关联的半导体器件中没有发生故障时,每个指示器臂保持其静止位置。 如果在测试期间在半导体器件中发生故障,则每个指示臂改变其位置,并且保持两个位置中的一个,直到将测试板从老化炉中取出。 因此,可以在从老化炉中取出测试板之后确定测试结果。