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公开(公告)号：US07688569B2
公开(公告)日：2010-03-30
申请号：US10801257
申请日：2004-03-16
IPC分类号： H01G4/06
CPC分类号： C04B35/468 , C04B2235/445 , C04B2235/6562 , H01G4/008 , H01G4/1227 , H01G4/33 , H05K1/162 , H05K3/1291 , H05K2201/017 , H05K2201/0355 , H05K2201/09763 , H05K2203/1126
摘要： Dielectric powder and thick-film paste compositions are formed having high dielectric constants, low loss tangents, and other desirable electrical and physical properties. Conductive powder and paste compositions are formed having desirable electrical and physical properties. The dielectric powder and thick-film paste compositions can be used in combination with the conductive powder and paste compositions to form capacitors and other fired-on-foil passive circuit components.
摘要翻译： 形成介电粉末和厚膜糊组合物，其具有高介电常数，低损耗切线和其它所需的电学和物理性能。 形成具有所需电学和物理性质的导电粉末和糊剂组合物。 电介质粉末和厚膜糊剂组合物可以与导电粉末和糊剂组合物组合使用，以形成电容器和其它无卤电路元件。
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2.发明授权Thick film paste containing lead-tellurium-lithium-titanium-oxide and its use in the manufacture of semiconductor devices 失效含铅 - 碲 - 锂 - 氧化钛的厚膜糊剂及其在制造半导体器件中的应用公开(公告)号：US08691119B2
公开(公告)日：2014-04-08
申请号：US13556645
申请日：2012-07-24
申请人： Kenneth Warren Hang , Yueli Wang
发明人： Kenneth Warren Hang , Yueli Wang
IPC分类号： H01B1/22 , H01L31/0224 , H01L35/14
CPC分类号： H01B1/22
摘要： The present invention is directed to an electroconductive thick film paste composition comprising electrically conductive Ag, a second electrically conductive metal selected from the group consisting of Ni, Al and mixtures thereof and a lead-tellurium-lithium-titanium-oxide all dispersed in an organic medium. The present invention is further directed to an electrode formed from the thick film paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode.
摘要翻译： 本发明涉及一种导电厚膜糊剂组合物，其包含导电Ag，选自Ni，Al及其混合物的第二导电金属和全部分散在有机物中的铅 - 碲 - 锂 - 氧化钛 中。 本发明还涉及由厚膜糊剂组合物和半导体器件形成的电极，特别是包括这种电极的太阳能电池。
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3.发明授权公开(公告)号：US08552558B2
公开(公告)日：2013-10-08
申请号：US12254189
申请日：2008-10-20
IPC分类号： H01L29/45 , H01L31/0224
CPC分类号： H01B1/16 , C03C8/10 , C03C8/12 , C03C8/18 , H01B1/22 , H01L31/022425 , H05K1/092 , Y02E10/50
摘要： The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (c) fluorine-containing glass frit; dispersed in (d) organic vehicle and devices made therefrom.
摘要翻译： 本发明涉及一种厚膜导电组合物，其包含：（a）导电银粉; （c）含氟玻璃料; 分散在（d）有机载体和由其制成的装置中。
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4.发明授权Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices 有权含有铋 - 氧化碲的厚膜糊剂及其在制造半导体器件中的应用公开(公告)号：US08512463B2
公开(公告)日：2013-08-20
申请号：US13438093
申请日：2012-04-03
申请人： Kenneth Warren Hang
发明人： Kenneth Warren Hang
IPC分类号： C09D1/00 , C01G29/00 , H01L31/0272
CPC分类号： H01L31/0272 , C01B19/004 , C01G29/00 , C01P2006/40 , C03C8/08 , C03C8/18 , C09D7/61 , H01B1/22 , H01L31/022425 , H05K1/0306 , H05K1/092 , Y02E10/50
摘要： The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium-oxide both dispersed in an organic medium. The present invention is further directed to an electrode formed from the paste composition and a semiconductor device and, in particular, a solar cell comprising such an electrode. The present invention is also directed to the bismuth-tellurium oxide that is a component of thick film pastes.
摘要翻译： 本发明涉及一种导电厚膜糊料组合物，其包含分散在有机介质中的Ag和无铅的铋 - 碲氧化物。 本发明还涉及由糊料组合物和半导体器件形成的电极，特别是包括这种电极的太阳能电池。 本发明还涉及作为厚膜糊的成分的氧化铋 - 氧化铋。
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公开(公告)号：US20120312372A1
公开(公告)日：2012-12-13
申请号：US13592497
申请日：2012-08-23
申请人： Alan Frederick Carroll , Kenneth Warren Hang , Brian J. Laughlin , Zhigang Rick Li , Hisashi Matsuno , Yueli Wang
发明人： Alan Frederick Carroll , Kenneth Warren Hang , Brian J. Laughlin , Zhigang Rick Li , Hisashi Matsuno , Yueli Wang
IPC分类号： H01B1/22 , H01L31/0224 , H01L23/48 , H01B1/20 , H01L21/283
CPC分类号： C03C3/07 , C03C8/12 , C03C8/18 , H01B1/16 , H01L31/022408 , H01L31/022425 , H01L2924/0002 , Y02E10/50 , H01L2924/00
摘要： The invention relates to zinc-containing glass compositions useful in conductive pastes for silicon semiconductor devices and photovoltaic cells.
摘要翻译： 本发明涉及用于硅半导体器件和光伏电池的导电浆料中的含锌玻璃组合物。
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6.发明授权Conductive compositions and processes for use in the manufacture of semiconductor devices: flux materials 有权用于制造半导体器件的导电组合物和方法：焊剂材料公开(公告)号：US08187505B2
公开(公告)日：2012-05-29
申请号：US12254264
申请日：2008-10-20
IPC分类号： B32B31/06
摘要： Described herein are a silicon semiconductor device and a conductive paste, including a flux material, for use in the front side of a solar cell device.
摘要翻译： 这里描述了一种用于太阳能电池装置正面的硅半导体器件和包括助焊剂材料的导电膏。
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公开(公告)号：US08133413B2
公开(公告)日：2012-03-13
申请号：US12425742
申请日：2009-04-17
IPC分类号： H01B1/22
摘要： This invention relates to a composition using a ruthenium oxide and/or a polynary ruthenium oxide as conducting components and using a Cu containing glass frit.
摘要翻译： 本发明涉及使用氧化钌和/或多元氧化钌作为导电组分并使用含Cu玻璃料的组合物。
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8.发明申请THICK-FILM PASTES CONTAINING LEAD-TELLURIUM-BORON-OXIDES, AND THEIR USE IN THE MANUFACTURE OF SEMICONDUCTOR DEVICES 有权包含铅 - 氧化硼 - 氧化物的薄膜浆料及其在半导体器件制造中的应用公开(公告)号：US20110232746A1
公开(公告)日：2011-09-29
申请号：US13100550
申请日：2011-05-04
申请人： Alan Frederick Carroll , Kenneth Warren Hang , Brian J. Laughlin , Kurt Richard Mikeska , Carmine Torardi , Paul Douglas Vernooy
发明人： Alan Frederick Carroll , Kenneth Warren Hang , Brian J. Laughlin , Kurt Richard Mikeska , Carmine Torardi , Paul Douglas Vernooy
IPC分类号： H01L31/0224 , H01L21/28 , H01B1/22
CPC分类号： H01L31/022425 , B22F1/0059 , B22F1/007 , B22F7/04 , B22F7/08 , B22F2007/047 , C03C8/10 , C03C8/12 , C04B35/01 , H01B1/16 , H01B1/22 , H01L31/0264 , H01L31/1884 , H01L2924/0002 , Y02E10/50 , Y02E10/52 , H01L2924/00
摘要： The present invention provides a thick-film paste for printing the front side of a solar cell device having one or more insulating layers. The thick-film paste comprises an electrically conductive metal and a lead-tellurium-boron-oxide dispersed in an organic medium.
摘要翻译： 本发明提供一种用于印刷具有一个或多个绝缘层的太阳能电池装置的正面的厚膜糊剂。 厚膜浆料包含分散在有机介质中的导电金属和铅 - 碲 - 氧化硼。
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公开(公告)号：US20110227003A1
公开(公告)日：2011-09-22
申请号：US13118660
申请日：2011-05-31
CPC分类号： C01G55/001 , C01G55/00 , C01P2002/54 , C01P2002/72 , C01P2004/61 , C01P2004/62 , C03C8/14 , C04B41/009 , C04B41/5022 , C04B41/52 , C04B41/86 , C04B41/90 , C04B2111/00844 , H01B1/22 , H01C7/003 , H01C17/06533 , C04B35/10 , C04B41/4539 , C04B41/4572 , C04B41/5027 , C04B41/5116
摘要： A non-lead composition for use as a thick-film resistor paste in electronic applications. The composition comprises particles of Li2RuO3 of diameter between 0.5 and 5 microns and a lead-free frit. The particles have had the lithium at or near primarily the surface of the particle at least partially exchanged for atoms of other metals.
摘要翻译： 用作电子应用中的厚膜电阻膏的非铅组合物。 该组合物包含直径为0.5至5微米的Li2RuO3颗粒和无铅玻璃料。 颗粒已经使锂在或接近主要表面的颗粒至少部分地与其它金属的原子交换。
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10.发明申请公开(公告)号：US20110203659A1
公开(公告)日：2011-08-25
申请号：US13098855
申请日：2011-05-02
IPC分类号： H01L31/0224 , H01B1/22 , H01L21/283 , H01L29/45
CPC分类号： H01L31/022408 , C03C8/02 , C03C8/04 , C03C8/06 , C03C8/18 , H01B1/22 , H01L31/022425 , H05K1/092 , Y02E10/50
摘要： The present invention is directed to a thick film conductive composition comprising: (a) electrically conductive silver powder; (b) zinc-containing additive; (c) glass frit wherein said glass frit is lead-free; dispersed in (d) organic medium. The present invention is further directed to an electrode formed from the composition above wherein said composition has been fired to remove the organic vehicle and sinter said glass particles. Still further, the invention is directed to a method of manufacturing a semiconductor device from a structural element composed of a semiconductor having a p-n junction and an insulating film formed on a main surface of the semiconductor comprising the steps of (a) applying onto said insulating film the thick film composition detailed above; and (b) firing said semiconductor, insulating film and thick film composition to form an electrode. Additionally, the present invention is directed to a semiconductor device formed by the method detailed above and a semiconductor device formed from the thick film conductive composition detailed above.
摘要翻译： 本发明涉及一种厚膜导电组合物，其包含：（a）导电银粉; （b）含锌添加剂; （c）玻璃料，其中所述玻璃料是无铅的; 分散在（d）有机介质中。 本发明还涉及由上述组合物形成的电极，其中所述组合物已被烧制以除去有机载体并烧结所述玻璃颗粒。 另外，本发明涉及从由半导体构成的结构元件制造半导体器件的方法，所述结构元件由在半导体的主表面上形成的pn结和绝缘膜构成，包括以下步骤：（a）施加到所述绝缘 上面详细介绍了薄膜组成; 和（b）烧制所述半导体，绝缘膜和厚膜组合物以形成电极。 另外，本发明涉及通过上述方法形成的半导体器件以及由上述详细描述的厚膜导电组合物形成的半导体器件。
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