-
1.发明授权公开(公告)号：US06563118B2
公开(公告)日：2003-05-13
申请号：US09733181
申请日：2000-12-08
IPC分类号： G01J500
CPC分类号： H01L37/02 , C30B23/02 , C30B25/02 , C30B25/18 , C30B29/32 , H01L21/02381 , H01L21/02488 , H01L21/02505 , H01L21/02521 , H01L27/16
摘要： High quality epitaxial layers of monocrystalline materials can be grown overlying large silicon wafers by first growing an accommodating buffer layer (104) on a silicon wafer (102). The accommodating buffer layer (104) is a layer of monocrystalline material spaced apart from the silicon wafer (102) by an amorphous interface layer (108) of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline accommodating buffer layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Utilizing this technique permits the fabrication of thin film pyroelectric devices (150) on a monocrystalline silicon substrate.
-
公开(公告)号：US07342276B2
公开(公告)日：2008-03-11
申请号：US10861467
申请日：2004-06-07
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/19 , H01L31/113
CPC分类号： H01L28/55 , H01L21/28194 , H01L21/28202 , H01L21/31691 , H01L29/513 , H01L29/517 , H01L29/518 , H01L29/94
摘要： A semiconductor device, including: a semiconductor material; a conductive element; and a substantially monocrystalline insulator disposed between the semiconductor material and the conductive element and substantially lattice matched to the semiconductor material.
摘要翻译： 一种半导体器件，包括：半导体材料; 导电元件; 以及设置在半导体材料和导电元件之间并基本上与半导体材料晶格匹配的基本单晶绝缘体。
-
3.发明授权Thermoelectric power generator and method of generating thermoelectric power in a steam power cycle utilizing latent steam heat 失效热电发电机及利用潜热蒸汽在蒸汽动力循环中产生热电功率的方法公开(公告)号：US06367261B1
公开(公告)日：2002-04-09
申请号：US09703072
申请日：2000-10-30
IPC分类号： F01K1700
摘要： A thermoelectric power generator and method of generating thermoelectric power in a steam power cycle utilizing latent steam heat including a condenser, a heat source, such as steam, and at least one thermoelectric module. The condenser includes a plurality of condenser tubes each having included therein a heat extractor. The heat source is in communication with the condenser and is characterized as providing thermal energy to the condenser. The at least one thermoelectric module, including a plurality of thermoelectric elements, is positioned in communication with at least one of the plurality of condenser tubes so that thermal energy flows through the thermoelectric elements thereby generating electrical power.
摘要翻译： 一种热电发电机和利用包括冷凝器，热源（例如蒸汽）和至少一个热电模块的潜热蒸汽热在蒸汽动力循环中产生热电功率的方法。 冷凝器包括多个冷凝管，每个冷凝管每个都包括一个散热器。 热源与冷凝器连通，其特征在于向冷凝器提供热能。 包括多个热电元件的至少一个热电模块被定位成与多个冷凝器管中的至少一个连通，使得热能流过热电元件从而产生电力。
-
4.发明授权Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with silicon 有权制造具有与硅结晶的碱土金属氧化物界面的半导体结构的方法公开(公告)号：US06224669B1
公开(公告)日：2001-05-01
申请号：US09662390
申请日：2000-09-14
申请人： Zhiyi Yi , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
发明人： Zhiyi Yi , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
IPC分类号： C03B2514
CPC分类号： H01L21/31691 , C30B23/02 , C30B25/02 , C30B29/16 , H01L21/31604 , H01L28/56
摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.
摘要翻译： 一种制造半导体结构的方法包括以下步骤：提供具有表面（12）的硅衬底（10）; 在所述硅衬底的表面上形成包含硅，氧和金属的单原子层的界面（14）; 以及在界面上形成一层或多层单晶氧化物（26）。 该界面包括硅，氧和XSiO 2形式的金属的原子层，其中X是金属。
-
5.发明授权
公开(公告)号：US6097047A
公开(公告)日：2000-08-01
申请号：US70063
申请日：1998-04-30
IPC分类号： H01L21/336 , H01L21/8234 , H01L29/10 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66772 , H01L21/8234 , H01L29/1079 , H01L29/78391 , H01L29/78603 , H01L29/78645
摘要： A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) is manufactured from a substrate (11) that has a layer (14) of ferroelectric material sandwiched between a substrate (13) and a layer (16) of silicon. A gate structure (24) is formed on the layer (16) of silicon. A source region is formed in a portion of the layer (16) of silicon adjacent one side of the gate structure (24) and a drain region is formed in a portion of the layer (16) of silicon adjacent an opposing side of the gate structure (24).
摘要翻译： 铁电半导体器件（10）和制造铁电半导体器件（10）的方法。 铁电半导体装置（10）由具有夹在基板（13）和硅层（16）之间的铁电材料层（14）的基板（11）制成。 在硅的层（16）上形成栅极结构（24）。 源极区域形成在与栅极结构（24）的一侧相邻的硅的层（16）的一部分中，并且漏极区域形成在邻近栅极的相对侧的硅层（16）的一部分中 结构（24）。
-
6.发明授权
公开(公告)号：US5767543A
公开(公告)日：1998-06-16
申请号：US714715
申请日：1996-09-16
IPC分类号： H01L21/02 , H01L21/285 , H01L21/314 , H01L21/316 , H01L29/51 , H01L29/788 , G11C11/22
CPC分类号： H01L28/56 , H01L21/2855 , H01L21/28556 , H01L21/31691 , H01L29/516
摘要： A layered bismuth ferroelectric structure (12) and a method for forming the bismuth layered ferroelectric structure (12). A monolayer (12A) of bismuth is formed in intimate contact with a single crystalline semiconductor material (11). A layered ferroelectric material (12) is grown on the monolayer (12A) of bismuth such that the monolayer (12A) of bismuth becomes a part of the layered ferroelectric material (12). The ferroelectric material (12) forms a layered ferroelectric material which is not a pure perovskite, wherein the crystalline structure at the interface between the single crystalline semiconductor material (11) and the monolayer (12A) of bismuth are substantially the same.
摘要翻译： 层状铋强电介质结构（12）和形成铋层状铁电体结构（12）的方法。 形成与单晶半导体材料（11）紧密接触的铋单层（12A）。 在铋的单层（12A）上生长分层的铁电材料（12），使得铋的单层（12A）成为层状铁电体（12）的一部分。 铁电材料（12）形成不是纯钙钛矿的层状铁电体材料，其中在单晶半导体材料（11）和铋单层（12A）之间的界面处的晶体结构基本上相同。
-
公开(公告)号：US5039881A
公开(公告)日：1991-08-13
申请号：US370657
申请日：1989-06-23
IPC分类号： H03K19/018
CPC分类号： H03K19/01812
摘要： An input buffer includes an input circuit (80), a pair of complimentary outputs (52,54) and a differential ampliifer (12). The input buffer includes a pull-down diode (90) arranged in parallel with pull-up diodes (84, 86, and 88), coupled between the buffer input (82) and the differential amplifier input (32). Pull-up is achieved through the low impedance path of the pull-up diodes, eliminating a need for a high value resistor. Pull-down is achieved through the pull-down diode in series with a resistor (92). This arrangement provides high speed of operation, while reducing current consumption.
摘要翻译： 输入缓冲器包括输入电路（80），一对互补输出（52,54）和差分放大器（12）。 输入缓冲器包括与上拉二极管（84,86和88）并联布置的下拉二极管（90），耦合在缓冲器输入端（82）和差分放大器输入端（32）之间。 通过上拉二极管的低阻抗路径实现上拉，无需使用高值电阻。 通过与电阻（92）串联的下拉二极管实现下拉。 这种布置提供高速操作，同时减少电流消耗。
-
公开(公告)号：US06241821B1
公开(公告)日：2001-06-05
申请号：US09273929
申请日：1999-03-22
申请人： Zhiyi Yu , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
发明人： Zhiyi Yu , Ravindranath Droopad , Corey Daniel Overgaard , Jamal Ramdani , Jay A. Curless , Jerald A. Hallmark , William J. Ooms , Jun Wang
IPC分类号： C30B2514
摘要： A method for fabricating a semiconductor structure comprises the steps of providing a silicon substrate (10) having a surface (12); forming on the surface of the silicon substrate an interface (14) comprising a single atomic layer of silicon, oxygen, and a metal; and forming one or more layers of a single crystal oxide (26) on the interface. The interface comprises an atomic layer of silicon, oxygen, and a metal in the form XSiO2, where X is a metal.
-
9.发明授权
公开(公告)号：US5888296A
公开(公告)日：1999-03-30
申请号：US956622
申请日：1997-09-29
IPC分类号： H01L21/02 , H01L21/285 , H01L21/314 , H01L21/316 , H01L29/51 , C30B23/00
CPC分类号： H01L28/56 , H01L21/2855 , H01L21/28556 , H01L21/31691 , H01L29/516
摘要： A layered bismuth ferroelectric structure (12) and a method for forming the bismuth layered ferroelectric structure (12). A monolayer (12A) of bismuth is formed in intimate contact with a single crystalline semiconductor material (11). A layered ferroelectric material (12) is grown on the monolayer (12A) of bismuth such that the monolayer (12A) of bismuth becomes a part of the layered ferroelectric material (12). The ferroelectric material (12) forms a layered ferroelectric material which is not a pure perovskite, wherein the crystalline structure at the interface between the single crystalline semiconductor material (11) and the monolayer (12A) of bismuth are substantially the same.
摘要翻译： 层状铋铁电体结构（12）和形成铋层状铁电体结构（12）的方法。 形成与单晶半导体材料（11）紧密接触的铋单层（12A）。 在铋的单层（12A）上生长分层的铁电材料（12），使得铋的单层（12A）成为层状铁电体（12）的一部分。 铁电材料（12）形成不是纯钙钛矿的层状铁电体材料，其中在单晶半导体材料（11）和铋单层（12A）之间的界面处的晶体结构基本上相同。
-
公开(公告)号：US5846847A
公开(公告)日：1998-12-08
申请号：US743769
申请日：1996-11-07
IPC分类号： H01L21/336 , H01L21/8234 , H01L29/10 , H01L29/78 , H01L29/786 , H01G7/06 , H01L21/8239
CPC分类号： H01L29/66772 , H01L21/8234 , H01L29/1079 , H01L29/78391 , H01L29/78603 , H01L29/78645
摘要： A ferroelectric semiconductor device (10) and a method of manufacturing the ferroelectric semiconductor device (10). The ferroelectric semiconductor device (10) is manufactured from a substrate (11) that has a layer (14) of ferroelectric material sandwiched between a substrate (13) and a layer (16) of silicon. A gate structure (24) is formed on the layer (16) of silicon. A source region is formed in a portion of the layer (16) of silicon adjacent one side of the gate structure (24) and a drain region is formed in a portion of the layer (16) of silicon adjacent an opposing side of the gate structure (24).
摘要翻译： 铁电半导体器件（10）和制造铁电半导体器件（10）的方法。 铁电半导体装置（10）由具有夹在基板（13）和硅层（16）之间的铁电材料层（14）的基板（11）制成。 在硅的层（16）上形成栅极结构（24）。 源极区域形成在与栅极结构（24）的一侧相邻的硅的层（16）的一部分中，并且漏极区域形成在邻近栅极的相对侧的硅层（16）的一部分中 结构（24）。
-
-
-
-
-
-
-
-
-
搜索结果
32 条记录 (耗时 0.028 秒)
