Abstract:
An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.
Abstract:
Semiconductor devices in an optoelectronic integrated circuit are electrically isolated from each other by using planar lateral oxidation to oxidize a buried semiconductor layer vertically separating the semiconductor devices.
Abstract:
Several methods and structures for improving the yield of out-of-plane micro-device structures including springs and coils are described. Structures and methods for adjusting the coil diameter after spring release, if necessary, are also disclosed. In one method the radius of curvature of the released elastic members is controlled by depositing a layer of a reflow material and reflowing the layer after release. The high yield structures may be used in numerous electronic applications such as filter circuits.
Abstract:
A new type of high-Q variable capacitor includes a substrate, a first electrically conductive layer fixed to the substrate, a dielectric layer fixed to a portion of the electrically conductive layer, and a second electrically conductive layer having an anchor portion and a free portion. The anchor portion is fixed to the dielectric layer and the free portion is initially fixed to the dielectric layer, but is released from the dielectric layer to become separated from the dielectric layer, and wherein an inherent stress profile in the second electrically conductive layer biases the free portion away from the a dielectric layer. When a bias voltage is applied between the first electrically conductive layer and the second electrically conductive layer, electrostatic forces in the free portion bend the free portion towards the first electrically conductive layer, thereby increasing the capacitance of the capacitor.
Abstract:
An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. Alternately, the loop winding can be formed of two elastic members in which the free ends are joined in mid-air. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.
Abstract:
A new type of high-Q variable capacitor includes a substrate, a first electrically conductive layer fixed to the substrate, a dielectric layer fixed to a portion of the electrically conductive layer, and a second electrically conductive layer having an anchor portion and a free portion. The anchor portion is fixed to the dielectric layer and the free portion is initially fixed to the dielectric layer, but is released from the dielectric layer to become separated from the dielectric layer, and wherein an inherent stress profile in the second electrically conductive layer biases the free portion away from the a dielectric layer. When a bias voltage is applied between the first electrically conductive layer and the second electrically conductive layer, electrostatic forces in the free portion bend the free portion towards the first electrically conductive layer, thereby increasing the capacitance of the capacitor.
Abstract:
A nitride based resonant cavity semiconductor structure has highly reflective mirrors on opposite sides of the active layer. These highly reflective mirrors can be distributed Bragg reflectors or metal terminated layer stacks of dielectric materials. The nitride based resonant cavity semiconductor structure can be vertical cavity surface emitting laser (VCSEL), a light emitting diode (LED), or a photodetector (PD), or a combination of these devices.
Abstract:
An out-of-plane micro-structure which can be used for on-chip integration of high-Q inductors and transformers places the magnetic field direction parallel to the substrate plane without requiring high aspect ratio processing. The photolithographically patterned coil structure includes an elastic member having an intrinsic stress profile. The intrinsic stress profile biases a free portion away from the substrate forming a loop winding. An anchor portion remains fixed to the substrate. The free portion end becomes a second anchor portion which may be connected to the substrate via soldering or plating. A series of individual coil structures can be joined via their anchor portions to form inductors and transformers.
Abstract:
A method and apparatus for interconnecting at least two devices. Each of the interconnected devices includes a contact structure for electrically and/or physically interconnecting the devices. Preferably, the contact structure for at least one of the devices includes a spring contact. An adhesive, such as a UV-curable adhesive, is applied to at least a portion of one of the devices, and once the adhesive is applied, the devices are assembled, i.e., brought into sufficient proximity so that the contact structures interconnect the devices. The adhesive can be applied directly to contact structures of one of the devices and/or can be applied to other portions of the devices so that the adhesive flows around the contact structures during assembly. The adhesive is then cured to bond the devices together. Applying the adhesive before assembling the devices prevents interference with the interconnection between the contact structures, especially if the contact structures include spring contacts to be electrically connected with corresponding contact pads.
Abstract:
Efficient methods are disclosed for fabricating spring structures in which a passive, conductive coating is deposited onto the spring structure after release. A release layer is deposited on a substrate and then a spring metal layer is formed thereon. A first mask is then used to etch the spring metal layer to form a spring metal finger. A second (release) mask is then deposited that defines a release window used to remove a portion of the release layer and release a free end of the spring metal finger. The second mask is also used as a mask during the subsequent directional deposition of a conductive coating material on the cantilevered tip of the finger. The second mask is then stripped, and the residual coating deposited thereon is lifted off. The resulting spring structure includes conductive coating on the upper surface and front edge of the finger tip.