公开(公告)号：US08101502B2

公开(公告)日：2012-01-24

申请号：US12600813

申请日：2008-04-01

申请人： Yasumori Fukushima ,  Yutaka Takafuji ,  Kazuhide Tomiyasu ,  Michiko Takei ,  Steven Droes

发明人： Yasumori Fukushima ,  Yutaka Takafuji ,  Kazuhide Tomiyasu ,  Michiko Takei ,  Steven Droes

IPC分类号： H01L21/22

CPC分类号： H01L27/12 ,  H01L21/2007 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/76254 ,  H01L21/84 ,  H01L29/78636 ,  H01L2224/83894 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/00

摘要： A device portion forming step includes an assisting layer forming step of forming a planarization assisting layer, which covers a plurality of conductive films, over a first planarizing layer before forming a second planarizing layer. In the assisting layer forming step, the planarization assisting layer is formed so that a height of the planarization assisting layer from a surface of the first planarizing layer located on a side opposite to the substrate layer becomes equal between at least a part of a region where the conductive films are formed, and at least a part of a region where no conductive film is formed.

摘要翻译： 器件部分形成步骤包括辅助层形成步骤，在形成第二平坦化层之前，在第一平坦化层上形成覆盖多个导电膜的平坦化辅助层。 在辅助层形成步骤中，形成平坦化辅助层，使得平坦化辅助层从位于与衬底层相反的一侧的第一平坦化层的表面的高度在至少一部分区域之间变得相等， 形成导电膜，并且形成不形成导电膜的区域的至少一部分。

公开(公告)号：US20100155905A1

公开(公告)日：2010-06-24

申请号：US12600813

申请日：2008-04-01

申请人： Yasumori Fukushima ,  Yutaka Takafuji ,  Kazuhide Tomiyasu ,  Michiko Takei ,  Steven Droes

发明人： Yasumori Fukushima ,  Yutaka Takafuji ,  Kazuhide Tomiyasu ,  Michiko Takei ,  Steven Droes

IPC分类号： H01L29/02 ,  H01L21/762

CPC分类号： H01L27/12 ,  H01L21/2007 ,  H01L21/31053 ,  H01L21/31055 ,  H01L21/76254 ,  H01L21/84 ,  H01L29/78636 ,  H01L2224/83894 ,  H01L2924/01079 ,  H01L2924/1305 ,  H01L2924/00

摘要： A device portion forming step includes an assisting layer forming step of forming a planarization assisting layer, which covers a plurality of conductive films, over a first planarizing layer before forming a second planarizing layer. In the assisting layer forming step, the planarization assisting layer is formed so that a height of the planarization assisting layer from a surface of the first planarizing layer located on a side opposite to the substrate layer becomes equal between at least a part of a region where the conductive films are formed, and at least a part of a region where no conductive film is formed.

摘要翻译： 器件部分形成步骤包括辅助层形成步骤，在形成第二平坦化层之前，在第一平坦化层上形成覆盖多个导电膜的平坦化辅助层。 在辅助层形成步骤中，形成平坦化辅助层，使得平坦化辅助层从位于与衬底层相反的一侧的第一平坦化层的表面的高度在至少一部分区域之间变得相等， 形成导电膜，并且形成不形成导电膜的区域的至少一部分。

公开(公告)号：US08361882B2

公开(公告)日：2013-01-29

申请号：US13139988

申请日：2009-08-21

申请人： Michiko Takei ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Shin Matsumoto ,  Kazuo Nakagawa ,  Yutaka Takafuji

发明人： Michiko Takei ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Shin Matsumoto ,  Kazuo Nakagawa ,  Yutaka Takafuji

IPC分类号： H01L21/30 ,  H01L29/06

CPC分类号： H01L27/1266 ,  H01L27/1214 ,  H01L29/66772 ,  H01L29/78636

摘要： Provided is a semiconductor device manufacturing method wherein the following steps are performed; a step of forming at least a part of an element on a base body layer, a step of forming a peeling layer, a step of forming a planarizing film; a step of forming a die by separating the base body layer at a separating region; a step of bonding the die to a substrate by bonding the die on the planarizing film; and a step of peeling and removing a part of the base body layer along the peeling layer. Prior to the step of forming the die, a step of forming a groove opened on the surface of the planarizing film such that at least a part of the separating region is included on the bottom surface of the groove, and forming the die such that the die has a polygonal outer shape wherein all the internal angles are obtuse by forming the groove is performed.

摘要翻译： 提供一种其中执行以下步骤的半导体器件制造方法; 在基体层上形成元素的至少一部分的步骤，形成剥离层的步骤，形成平坦化膜的步骤; 通过在分离区域分离基体层而形成模具的步骤; 通过将该模具接合在平坦化膜上而将芯片接合到基板的步骤; 以及沿剥离层剥离和去除基体层的一部分的步骤。 在成形模具的步骤之前，形成在平坦化膜的表面上开口的槽，使得至少一部分分离区域包含在槽的底面上，并且形成模具，使得 模具具有多边形外形，其中通过形成凹槽来执行所有内角都是钝的。

公开(公告)号：US20120038022A1

公开(公告)日：2012-02-16

申请号：US13259076

申请日：2009-10-26

申请人： Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuo Nakagawa ,  Kenshi Tada ,  Michiko Takei ,  Shin Matsumoto

发明人： Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuo Nakagawa ,  Kenshi Tada ,  Michiko Takei ,  Shin Matsumoto

IPC分类号： H01L29/02 ,  B32B3/00

CPC分类号： H01L27/1218 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1266 ,  H01L29/66772 ,  Y10T428/24355

摘要： Disclosed is a glass substrate (20) that is capable of constituting a semiconductor device (10) when a monocrystalline silicon thin film (90) is provided on the surface of the substrate by transfer. The surface of the glass substrate (20) has a receiving surface (22) onto which the monocrystalline silicon thin film (90) can be provided. The height of the ripples on the receiving surface (22) having a period of 200 to 500 microns is no more than 0.40 nm.

摘要翻译： 公开了当通过转印在基板的表面上设置单晶硅薄膜（90）时能够构成半导体器件（10）的玻璃基板（20）。 玻璃基板（20）的表面具有能够设置单晶硅薄膜（90）的接收面（22）。 在接收表面（22）上具有200至500微米的周期的波纹的高度不大于0.40nm。

公开(公告)号：US20110272694A1

公开(公告)日：2011-11-10

申请号：US12674560

申请日：2008-09-08

申请人： Michiko Takei ,  Shin Matsumoto ,  Kazuhide Tomiyasu ,  Yasumori Fukushima ,  Yutaka Takafuji

发明人： Michiko Takei ,  Shin Matsumoto ,  Kazuhide Tomiyasu ,  Yasumori Fukushima ,  Yutaka Takafuji

IPC分类号： H01L29/24 ,  H01L21/762 ,  B32B3/00 ,  H01L29/04

CPC分类号： H01L27/1266 ,  H01L21/02076 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/78603 ,  Y10T428/24355

摘要： The present invention is intended to provide a glass substrate (20), made of an insulating material, which can constitute a semiconductor apparatus (10) by transferring a single crystal silicon film (50) or a substrate including a semiconductor device onto a surface (24) of the insulating substrate, a transferred surface (26) being part of the surface (24), the single crystal silicon film (50) capable of being provided on the transferred surface (26), and the transferred surface (26) having an arithmetic mean roughness of not more than 0.4 nm.

摘要翻译： 本发明旨在提供一种由绝缘材料制成的玻璃基板（20），其可以通过将单晶硅膜（50）或包括半导体器件的基板转移到表面上而构成半导体装置（10） 24），作为表面（24）的一部分的转印面（26），能够设置在转印面（26）上的单晶硅膜（50），转印面（26）具有 算术平均粗糙度不大于0.4nm。

公开(公告)号：US08008205B2

公开(公告)日：2011-08-30

申请号：US12159582

申请日：2006-10-13

申请人： Yasumori Fukushima ,  Yutaka Takafuji ,  Michiko Takei ,  Kazuhide Tomiyasu

发明人： Yasumori Fukushima ,  Yutaka Takafuji ,  Michiko Takei ,  Kazuhide Tomiyasu

IPC分类号： H01L21/311

CPC分类号： H01L21/84 ,  H01L21/26506 ,  H01L21/76254 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/12 ,  H01L29/6659 ,  H01L29/7833

摘要： A method of the present invention includes a first planarization film formation step of forming, in at least part of a flat portion of the second regions, a first planarization film so as to have a uniform thickness; a second planarization film formation step of forming a second planarization film between the first planarization films to be coplanar with a surface of the first planarization film; a peeling layer formation step of forming a peeling layer by ion implantation of a peeling material into the base layer via the first planarization film or the second planarization film; and a separation step of separating part of the base layer along the peeling layer.

摘要翻译： 本发明的方法包括：第一平坦化膜形成步骤，在第二区域的平坦部分的至少一部分中形成具有均匀厚度的第一平坦化膜; 第二平坦化膜形成步骤，在所述第一平坦化膜之间形成与所述第一平坦化膜的表面共面的第二平坦化膜; 剥离层形成步骤，通过经由第一平坦化膜或第二平坦化膜将剥离材料离子注入基底层来形成剥离层; 以及分离步骤，用于沿着剥离层分离基底层的一部分。

公开(公告)号：US20100283104A1

公开(公告)日：2010-11-11

申请号：US12746317

申请日：2008-11-25

申请人： Kenshi Tada ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Michiko Takei ,  Kazuo Nakagawa ,  Shin Matsumoto

发明人： Kenshi Tada ,  Yutaka Takafuji ,  Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Michiko Takei ,  Kazuo Nakagawa ,  Shin Matsumoto

IPC分类号： H01L29/786 ,  H01L21/762 ,  H01L21/28

CPC分类号： H01L27/1266 ,  H01L21/263 ,  H01L27/1214 ,  H01L29/6675 ,  H01L29/7836

摘要： An element portion forming step includes an insulating film forming step of forming an insulating film on a surface of a base layer, a conductive layer forming step of uniformly forming a conductive layer on a surface of the insulating film, and an electrode forming step of patterning the conductive layer to form an electrode. A delamination layer forming step of ion implanting a delamination material into the base layer to form a delamination layer is performed before the electrode forming step.

摘要翻译： 元件部分形成步骤包括在基底层的表面上形成绝缘膜的绝缘膜形成步骤，在绝缘膜的表面上均匀地形成导电层的导电层形成步骤和图案化的电极形成步骤 导电层形成电极。 在电极形成步骤之前，进行将分层材料离子注入基层以形成分层的分层形成步骤。

公开(公告)号：US20100059892A1

公开(公告)日：2010-03-11

申请号：US12447821

申请日：2007-12-14

申请人： Michiko Takei ,  Kazuhide Tomiyasu ,  Yasumori Fukushima ,  Yutaka Takafuji ,  Masao Moriguchi ,  Steven Roy Droes

发明人： Michiko Takei ,  Kazuhide Tomiyasu ,  Yasumori Fukushima ,  Yutaka Takafuji ,  Masao Moriguchi ,  Steven Roy Droes

IPC分类号： H01L23/532 ,  H01L21/3205

CPC分类号： H01L27/1266 ,  H01L21/6835 ,  H01L21/823418 ,  H01L21/823443 ,  H01L24/83 ,  H01L27/1214 ,  H01L27/1229 ,  H01L29/04 ,  H01L29/66772 ,  H01L2221/6835 ,  H01L2221/68363 ,  H01L2224/2919 ,  H01L2224/83894 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01021 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01045 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/04941 ,  H01L2924/0665 ,  H01L2924/10253 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/15788 ,  H01L2924/00 ,  H01L2924/3512

摘要： The present invention provides a production method of a semiconductor device, a production method of a display device, a semiconductor device, a production method of a semiconductor element, and a semiconductor element, each capable of providing a lower-resistance semiconductor element which is more finely prepared through more simple steps. The production method of the semiconductor device of the present invention is a production method of a semiconductor device including a semiconductor element on a substrate, wherein the production method includes a metal silicide-forming step of: transferring the semiconductor element onto the substrate, the semiconductor element having a multilayer structure of a silicon layer and a metal layer, and by heating, forming metal silicide from silicon for a metal layer-side part of the silicon layer and metal for a silicon layer-side part of the metal layer.

摘要翻译： 本发明提供半导体装置的制造方法，显示装置的制造方法，半导体装置，半导体元件的制造方法以及半导体元件，能够提供更多的低电阻半导体元件 通过更简单的步骤精心准备。 本发明的半导体装置的制造方法是在基板上具有半导体元件的半导体装置的制造方法，其特征在于，所述制造方法包括金属硅化物形成工序，将所述半导体元件转印到所述基板上，所述半导体 具有硅层和金属层的多层结构的元件，并且通过加热，从硅形成金属硅化物用于硅层的金属层侧部分和用于金属层的硅层侧部分的金属。

公开(公告)号：US08421076B2

公开(公告)日：2013-04-16

申请号：US12674560

申请日：2008-09-08

申请人： Michiko Takei ,  Shin Matsumoto ,  Kazuhide Tomiyasu ,  Yasumori Fukushima ,  Yutaka Takafuji

发明人： Michiko Takei ,  Shin Matsumoto ,  Kazuhide Tomiyasu ,  Yasumori Fukushima ,  Yutaka Takafuji

IPC分类号： H01L29/72

CPC分类号： H01L27/1266 ,  H01L21/02076 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/78603 ,  Y10T428/24355

摘要： The present invention is intended to provide a glass substrate (20), made of an insulating material, which can constitute a semiconductor apparatus (10) by transferring a single crystal silicon film (50) or a substrate including a semiconductor device onto a surface (24) of the insulating substrate, a transferred surface (26) being part of the surface (24), the single crystal silicon film (50) capable of being provided on the transferred surface (26), and the transferred surface (26) having an arithmetic mean roughness of not more than 0.4 nm.

摘要翻译： 本发明旨在提供一种由绝缘材料制成的玻璃基板（20），其可以通过将单晶硅膜（50）或包括半导体器件的基板转移到表面上而构成半导体装置（10） 24），作为表面（24）的一部分的转印面（26），能够设置在转印面（26）上的单晶硅膜（50），转印面（26）具有 算术平均粗糙度不大于0.4nm。

公开(公告)号：US20100295105A1

公开(公告)日：2010-11-25

申请号：US12746323

申请日：2008-09-25

申请人： Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Kenshi Tada ,  Michiko Takei

发明人： Yasumori Fukushima ,  Kazuhide Tomiyasu ,  Yutaka Takafuji ,  Kenshi Tada ,  Michiko Takei

IPC分类号： H01L29/78 ,  H01L21/762 ,  H01L29/73 ,  H01L29/861 ,  H01L21/331 ,  H01L21/336

CPC分类号： H01L27/1266 ,  H01L21/76254 ,  H01L27/1214 ,  H01L29/6659 ,  H01L29/66772 ,  H01L29/7833

摘要： A method for manufacturing a semiconductor device includes: an element portion formation step of forming an element portion on a base layer; a delaminating layer formation step of forming a delaminating layer in the base layer; a bonding step of bonding the base layer having the element portion to a substrate; and a separation step of separating and removing a portion of the base layer in the depth direction along the delaminating layer by heating the base layer bonded to the substrate. The method further includes, after the separation step, an ion implantation step of ion-implanting a p-type impurity element in the base layer for adjusting the impurity concentration of a p-type region of the element.

摘要翻译： 一种制造半导体器件的方法包括：元件部分形成步骤，在基底层上形成元件部分; 在所述基底层中形成剥离层的剥离层形成工序; 键合步骤，将具有元件部分的基底层粘合到基底上; 以及分离步骤，通过加热结合到基板的基底层，沿着剥离层在深度方向上分离和去除基底层的一部分。 该方法还包括在分离步骤之后的离子注入步骤，用于在基底层中离子注入p型杂质元素，以调整元件的p型区域的杂质浓度。