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    Semiconductor device
    1.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07135735B2

    公开(公告)日：2006-11-14

    申请号：US10791749

    申请日：2004-03-04

    申请人： Yoshiaki Fukuzumi ,  Takeshi Kajiyama

    发明人： Yoshiaki Fukuzumi ,  Takeshi Kajiyama

    IPC分类号： H01L29/76

    CPC分类号： H01L21/84 ,  H01L27/108 ,  H01L27/1203 ,  H01L29/7841

    摘要： A semiconductor device comprising: a support substrate; an embedded insulating layer formed on the support substrate; a semiconductor layer on the embedded insulating layer; at least an element region formed in the semiconductor layer; a plurality of source/drain regions of a first conductivity type, formed in the element region at predetermined intervals; a plurality of body regions of a second conductivity type, sandwiched between a pair of adjacent ones of the source/drain regions in the element region; and a gate formed on each of the body regions with a gate insulating film being laid between them, each of the source/drain regions including: an inner high-concentration portion extending to the embedded insulating layer, and an outer low-concentration portion surrounding the inner high-concentration portion and having a direct contact with the body regions.

    摘要翻译： 一种半导体器件，包括：支撑衬底; 形成在所述支撑基板上的嵌入绝缘层; 嵌入绝缘层上的半导体层; 至少形成在所述半导体层中的元件区域; 多个第一导电类型的源极/漏极区域，以预定间隔形成在元件区域中; 多个第二导电类型的主体区域，被夹在元件区域中的一对相邻源极/漏极区域之间; 以及形成在每个所述主体区域上的栅极，栅极绝缘膜被放置在它们之间，每个所述源极/漏极区域包括：延伸到所述嵌入绝缘层的内部高浓度部分和围绕 内部高浓度部分并且与身体区域直接接触。

    Non-volatile semiconductor storage device
    3.
    发明授权
    Non-volatile semiconductor storage device 有权
    非易失性半导体存储器件

    公开(公告)号：US08957501B2

    公开(公告)日：2015-02-17

    申请号：US13671077

    申请日：2012-11-07

    申请人： Takeshi Hioka ,  Yoshiaki Fukuzumi

    发明人： Takeshi Hioka ,  Yoshiaki Fukuzumi

    IPC分类号： H01L27/06 ,  H01L27/115 ,  H01L49/02

    CPC分类号： H01L27/11582 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L28/88

    摘要： A non-volatile semiconductor storage device contains a memory cell region, a first electrode, and a second electrode. The memory cell region is formed on a substrate and comprises multiple memory cells stacked on the substrate as part of memory strings. Multiple first conductive layers are laminated on the substrate. The first electrode functions as an electrode at one side of a capacitive component and comprises multiple conductive layers stacked on the substrate and separated horizontally from stacked conductive layers of the second electrode which is disposed at a side of the capacitive component opposite the first electrode.

    摘要翻译： 非易失性半导体存储装置包含存储单元区域，第一电极和第二电极。 存储单元区域形成在衬底上并且包括作为存储器串的一部分堆叠在衬底上的多个存储器单元。 多个第一导电层层叠在基板上。 第一电极用作电容部件一侧的电极，并且包括层叠在基板上的多个导电层，并且与设置在与第一电极相对的电容部件侧的第二电极的层叠导电层水平分离。

    Nonvolatile semiconductor memory device including silicon germanium semiconductor layer
    4.
    发明授权
    Nonvolatile semiconductor memory device including silicon germanium semiconductor layer 有权
    包括硅锗半导体层的非易失性半导体存储器件

    公开(公告)号：US08912594B2

    公开(公告)日：2014-12-16

    申请号：US13560260

    申请日：2012-07-27

    申请人： Jun Fujiki ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

    发明人： Jun Fujiki ,  Yoshiaki Fukuzumi ,  Hideaki Aochi

    IPC分类号： H01L29/792 ,  H01L27/115 ,  H01L27/105

    CPC分类号： H01L29/7926 ,  H01L27/11582 ,  H01L29/66833

    摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a stacked body, a second insulating layer, a select gate, a memory hole, a memory film, a channel body, a first semiconductor layer, and a second semiconductor layer. The select gate is provided on the second insulating layer. The memory film is provided on an inner wall of the memory hole. The channel body is provided inside the memory film. The first semiconductor layer is provided on an upper surface of the channel body. The second semiconductor layer is provided on the first semiconductor layer. The first semiconductor layer contains silicon germanium. The second semiconductor layer contains silicon germanium doped with a first impurity. A boundary between the first semiconductor layer and the second semiconductor layer is provided above a position of an upper end of the select gate.

    摘要翻译： 根据一个实施例，非易失性半导体存储器件包括层叠体，第二绝缘层，选择栅极，存储器孔，存储​​膜，通道体，第一半导体层和第二半导体层。 选择栅极设置在第二绝缘层上。 记忆膜设置在存储孔的内壁上。 通道体设置在记忆膜的内部。 第一半导体层设置在通道主体的上表面上。 第二半导体层设置在第一半导体层上。 第一半导体层包含硅锗。 第二半导体层包含掺杂有第一杂质的硅锗。 第一半导体层和第二半导体层之间的边界设置在选择栅极的上端的位置的上方。

    Nonvolatile semiconductor memory device and method of manufacturing the same
    7.
    发明授权
    Nonvolatile semiconductor memory device and method of manufacturing the same 失效
    非易失性半导体存储器件及其制造方法

    公开(公告)号：US08569133B2

    公开(公告)日：2013-10-29

    申请号：US13366509

    申请日：2012-02-06

    申请人： Masaru Kito ,  Yoshiaki Fukuzumi ,  Ryota Katsumata ,  Masaru Kidoh ,  Hiroyasu Tanaka ,  Megumi Ishiduki ,  Yosuke Komori ,  Hideaki Aochi

    发明人： Masaru Kito ,  Yoshiaki Fukuzumi ,  Ryota Katsumata ,  Masaru Kidoh ,  Hiroyasu Tanaka ,  Megumi Ishiduki ,  Yosuke Komori ,  Hideaki Aochi

    IPC分类号： H01L21/336

    CPC分类号： H01L27/11578 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/792 ,  H01L29/7926

    摘要： A nonvolatile semiconductor memory device includes a plurality of memory strings, each of which has a plurality of electrically rewritable memory cells connected in series; and select transistors, one of which is connected to each of ends of each of the memory strings. Each of the memory strings is provided with a first semiconductor layer having a pair of columnar portions extending in a perpendicular direction with respect to a substrate, and a joining portion formed so as to join lower ends of the pair of columnar portions; a charge storage layer formed so as to surround a side surface of the columnar portions; and a first conductive layer formed so as to surround the side surface of the columnar portions and the charge storage layer, and configured to function as a control electrode of the memory cells. Each of the select transistors is provided with a second semiconductor layer extending upwardly from an upper surface of the columnar portions; and a second conductive layer formed so as to surround a side surface of the second semiconductor layer with a gap interposed, and configured to function as a control electrode of the select transistors.

    摘要翻译： 非易失性半导体存储器件包括多个存储串，每个存储串具有串联连接的多个电可重写存储单元; 并选择晶体管，其中一个连接到每个存储器串的每一端。 每个存储器串都具有第一半导体层，该第一半导体层具有相对于基板在垂直方向上延伸的一对柱状部分，以及形成为连接该一对柱状部分的下端的接合部分; 形成为围绕所述柱状部的侧面的电荷存储层; 以及形成为围绕柱状部分的侧面和电荷存储层的第一导电层，并且被配置为用作存储单元的控制电极。 每个选择晶体管设置有从柱状部分的上表面向上延伸的第二半导体层; 以及第二导电层，其被形成为以间隔开的方式围绕所述第二半导体层的侧表面，并且被配置为用作所述选择晶体管的控制电极。

    NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE
    9.
    发明申请
    NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE 有权
    非挥发性半导体存储器件

    公开(公告)号：US20130113080A1

    公开(公告)日：2013-05-09

    申请号：US13671077

    申请日：2012-11-07

    申请人： Takeshi HIOKA ,  Yoshiaki Fukuzumi

    发明人： Takeshi HIOKA ,  Yoshiaki Fukuzumi

    IPC分类号： H01L27/06 ,  H01L21/02

    CPC分类号： H01L27/11582 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11575 ,  H01L28/88

    摘要： A non-volatile semiconductor storage device contains a memory cell region, a first electrode, and a second electrode. The memory cell region is formed on a substrate and comprises multiple memory cells stacked on the substrate as part of memory strings. Multiple first conductive layers are laminated on the substrate. The first electrode functions as an electrode at one side of a capacitive component and comprises multiple conductive layers stacked on the substrate and separated horizontally from stacked conductive layers of the second electrode which is disposed at a side of the capacitive component opposite the first electrode.

    摘要翻译： 非易失性半导体存储装置包含存储单元区域，第一电极和第二电极。 存储单元区域形成在衬底上并且包括作为存储器串的一部分堆叠在衬底上的多个存储器单元。 多个第一导电层层叠在基板上。 第一电极用作电容部件一侧的电极，并且包括层叠在基板上的多个导电层，并且与设置在与第一电极相对的电容部件侧的第二电极的层叠导电层水平分离。