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公开(公告)号：US20090225804A1
公开(公告)日：2009-09-10
申请号：US12392453
申请日：2009-02-25
申请人： Yoshifumi Sasahata , Keisuke Matsumoto , Toshitaka Aoyagi , Masahiko Kondow , Masato Morifuji , Hideki Momose
发明人： Yoshifumi Sasahata , Keisuke Matsumoto , Toshitaka Aoyagi , Masahiko Kondow , Masato Morifuji , Hideki Momose
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/105 , H01S5/1203 , H01S5/32391 , H01S5/3403
摘要： A semiconductor laser comprises an active section for generating light, and a peripheral section as resonator for producing laser light from the generated light, and includes an InP substrate. The active section has a lower cladding layer formed of AlInAs or AlGaInAs, a core layer including an active layer formed of AlGaInAs or InGaAsP, and an upper cladding layer formed of AlInAs or AlGaInAs. The peripheral section has a first cladding layer formed by oxidizing AlInAs or AlGaInAs, a core layer, and a second clad layer formed by oxidizing AlInAs or AlGaInAs, and a two-dimensional photonic crystal defined by an array of regularly spaced apart holes the peripheral section.
摘要翻译： 半导体激光器包括用于产生光的有源部分和作为用于从所产生的光产生激光的谐振器的外围部分，并且包括InP衬底。 有源部分具有由AlInAs或AlGaInAs形成的下包层，其包括由AlGaInAs或InGaAsP形成的有源层的芯层和由AlInAs或AlGaInAs形成的上覆层。 外围部分具有通过氧化AlInAs或AlGaInAs，芯层和通过氧化AlInAs或AlGaInAs形成的第二包层形成的第一包层和由规则间隔开的孔阵列限定的二维光子晶体，周边部分 。
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公开(公告)号：US07365904B2
公开(公告)日：2008-04-29
申请号：US11389315
申请日：2006-03-27
CPC分类号： G02F2/004 , G02F2001/212 , G02F2203/70
摘要： An optical wavelength converter includes: a first branch passage and a second branch passage receiving direct current light, one of the first branch passage and the second branch passage receiving input signal light; wavelength converting semiconductor optical amplifiers inserted into the first branch passage and the second branch passage, respectively; and a signal amplifying semiconductor optical amplifier for amplifying the input signal light, which is coupled with a port through which the input signal light is input to one of the first branch passage and the second branch passage. In the optical wavelength converter, differential gain of the signal amplifying semiconductor optical amplifier at a wavelength of the input signal light is less than differential gain of the wavelength converting semiconductor optical amplifier at the wavelength of the direct current light.
摘要翻译： 光波长转换器包括：第一分支通道和第二分支通道，其接收直流光，第一分支通道和第二分支通道中的一个接收输入信号光; 分别插入到第一分支通道和第二分支通道中的波长转换半导体光放大器; 以及用于放大输入信号光的信号放大半导体光放大器，其与输入信号光输入到第一分支通道和第二分支通道之一的端口耦合。 在光波长转换器中，在输入信号光的波长处的信号放大半导体光放大器的差分增益小于直流光波长处的波长转换半导体光放大器的差分增益。
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公开(公告)号：US20060291038A1
公开(公告)日：2006-12-28
申请号：US11389315
申请日：2006-03-27
IPC分类号： H01S3/00
CPC分类号： G02F2/004 , G02F2001/212 , G02F2203/70
摘要： An optical wavelength converter includes: a first branch passage and a second branch passage receiving direct current light, one of the first branch passage and the second branch passage receiving input signal light; wavelength converting semiconductor optical amplifiers inserted into the first branch passage and the second branch passage, respectively; and a signal amplifying semiconductor optical amplifier for amplifying the input signal light, which is coupled with a port through which the input signal light is input to one of the first branch passage and the second branch passage. In the optical wavelength converter, differential gain of the signal amplifying semiconductor optical amplifier at a wavelength of the input signal light is less than differential gain of the wavelength converting semiconductor optical amplifier at the wavelength of the direct current light.
摘要翻译： 光波长转换器包括：第一分支通道和第二分支通道，其接收直流光，第一分支通道和第二分支通道中的一个接收输入信号光; 分别插入到第一分支通道和第二分支通道中的波长转换半导体光放大器; 以及用于放大输入信号光的信号放大半导体光放大器，其与输入信号光输入到第一分支通道和第二分支通道之一的端口耦合。 在光波长转换器中，在输入信号光的波长处的信号放大半导体光放大器的差分增益小于直流光波长处的波长转换半导体光放大器的差分增益。
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公开(公告)号：US07733934B2
公开(公告)日：2010-06-08
申请号：US11775928
申请日：2007-07-11
IPC分类号： H01S5/00
CPC分类号： H01S5/026 , B82Y20/00 , H01S5/0265 , H01S5/1014 , H01S5/1032 , H01S5/22 , H01S5/3211 , H01S5/34306
摘要： An optical waveguide has a semiconductor laser section, an intermediate section, and an optical modulator section on a surface of a substrate. The distance of a surface extending outwardly from and transverse to both sides of a mesa stripe in the semiconductor laser section from the surface of the substrate is larger than the distance of a surface extending outwardly from and transverse to both sides of the mesa stripe in the optical modulator section from the surface of the substrate. The distance of a surface extending outwardly from and transverse to both sides of the mesa stripe in the intermediate section from the surface of the substrate decreases from the semiconductor laser section toward the optical modulator section.
摘要翻译： 光波导在基板的表面上具有半导体激光部，中间部和光调制部。 从半导体激光器部分的基板的台面条的两侧向外延伸的表面与基板的表面之间的距离大于沿着基板的台面条的两侧向外延伸的横截面的距离 光学调制器部分。 从中间部分的台阶条的两侧向外延伸的表面与基板的表面之间的距离从半导体激光部朝向光调制器部分减小。
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公开(公告)号：US20050025210A1
公开(公告)日：2005-02-03
申请号：US10922893
申请日：2004-08-23
申请人： Toshitaka Aoyagi , Go Sakaino
发明人： Toshitaka Aoyagi , Go Sakaino
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/06226 , H01S5/124 , H01S5/3434
摘要： An n-InP second upper cladding layer is laid on a p-InP lower cladding layer while an active layer having upper and lower boundary surfaces that are uniformly flat in an optical waveguide direction is interposed therebetween. A diffraction layer having a phase-shifted structure provided in the direction of optical waveguide is interposed between the lower cladding layer and the active layer, or between the second upper cladding layer and the active layer. The length L of the diffraction grating layer in the direction of the optical waveguide is taken as L≦260 μm; a mean coupling factor κ of a diffraction grating layer is taken as κ≧130 cm−1; and κL satisfies 5.6>κL>3.0.
摘要翻译： 将n-InP第二上包层放置在p-InP下包层上，同时插入具有在光波导方向上均匀平坦的上边界面和下边界面的有源层。 具有沿光波导方向设置的相移结构的衍射层插入在下包层和有源层之间，或介于第二上覆层和有源层之间。 衍射光栅层沿光波导方向的长度L为L <=260μm; 衍射光栅层的平均耦合因子κ为k = 130cm -1; 而kappaL满足5.6> kappa> 3.0。
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公开(公告)号：US5550855A
公开(公告)日：1996-08-27
申请号：US237308
申请日：1994-05-03
CPC分类号： H04B10/2507 , H01S5/0265 , H01S5/0625
摘要： In an optical modulator including a laser light source emitting laser light and a modulator, a modulation signal source for applying a modulation signal to the modulator, a signal processor for producing and outputting a signal in response to a change in the modulation signal, and a driving current source for generating a driving current applied to the laser light. Wavelength chirping modulation reverse to the wavelength chirping occurring in the modulator is produced in the light emitted from the laser by modulation of the driving current whereby wavelength chirping produced by the modulator is at least partially cancelled and wavelength chirping of the light output from the modulator is reduced.
摘要翻译： 在包括发射激光的激光光源和调制器的光调制器中，用于向调制器施加调制信号的调制信号源，响应于调制信号的变化产生和输出信号的信号处理器，以及 用于产生施加到激光的驱动电流的驱动电流源。 通过调制驱动电流，在由激光器发出的光中产生与调制器中发生的波长啁啾相反的波长啁啾调制，由此调制器产生的波长啁啾至少部分被消除，并且来自调制器的光输出的波长啁啾是 减少
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公开(公告)号：US5214663A
公开(公告)日：1993-05-25
申请号：US818354
申请日：1992-01-09
CPC分类号： H01L33/305 , H01L33/0062 , H01S5/305 , H01S5/223 , H01S5/2231 , H01S5/3054 , H01S5/3211 , H01S5/32325
摘要： A semiconductor laser includes a p type cladding layer and an n type cladding layer sandwiching an active layer serially disposed on a semiconductor substrate. The p type cladding layer includes a first dopant impurity producing p type conductivity and a smaller quantity of a second impurity that produces n type conductivity and ionically bonds to the first impurity. The first and second dopant impurities attract each other and cannot move individually during a crystal growth step at high temperature whereby the diffusion of those impurities into the active layer is suppressed, preventing formation of a deep impurity level in the active layer, resulting in a semiconductor laser with a reduced threshold current.
摘要翻译： 半导体激光器包括p型覆层和夹着在半导体衬底上串联设置的有源层的n型覆层。 p型包覆层包括产生p型导电性的第一掺杂剂杂质和产生n型导电性并与第一杂质离子键合的较小量的第二杂质。 第一和第二掺杂剂杂质在高温下在晶体生长步骤期间彼此相互吸引，不能单独移动，从而抑制这些杂质向有源层的扩散，从而防止在有源层中形成深杂质水平，导致半导体 激光器具有降低的阈值电流。
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公开(公告)号：US20050123018A1
公开(公告)日：2005-06-09
申请号：US10952901
申请日：2004-09-30
申请人： Kazuhisa Takagi , Satoshi Shirai , Toshitaka Aoyagi , Yasuaki Tatsuoka , Chikara Watatani , Yoshihiko Hanamaki
发明人： Kazuhisa Takagi , Satoshi Shirai , Toshitaka Aoyagi , Yasuaki Tatsuoka , Chikara Watatani , Yoshihiko Hanamaki
CPC分类号： H01S5/12 , H01S5/1039 , H01S5/1221 , H01S5/22
摘要： A distributed feedback semiconductor laser includes an n-InP substrate, an n-InGaAsP diffraction grating layer above the n-InP substrate, an AlGaInAs-MQW active layer above the diffraction grating layer and a ridge portion on the active layer. The ridge portion includes a p-InP cladding layer and a p-InGaAs contact layer. The wavelength λg corresponding to the bandgap energy of the diffraction grating layer and the oscillation wavelength λ of laser light produced by the laser satisfy the relationship λ−150 nm
摘要翻译： 分布式反馈半导体激光器包括n-InP衬底，n-InP衬底上的n-InGaAsP衍射光栅层，衍射光栅层上方的AlGaInAs-MQW有源层和有源层上的脊部分。 脊部包括p-InP包层和p-InGaAs接触层。 对应于衍射光栅层的带隙能量的波长兰博德纹和由激光产生的激光的振荡波长λ满足关系式<？in-line-formula description =“In-line Formulas”end =“lead”？> λ-150nm
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公开(公告)号：US5048037A
公开(公告)日：1991-09-10
申请号：US553579
申请日：1990-07-18
申请人： Satoshi Arimoto , Toshitaka Aoyagi
发明人： Satoshi Arimoto , Toshitaka Aoyagi
CPC分类号： H01S5/2232 , H01S5/2237 , H01S5/32325
摘要： A visible light semiconductor laser device of an SBA type in which a current blocking layer of a second conductivity type is disposed on a semiconductor substrate of a first conductivity type and a stripe-shaped groove current path is provided in the current blocking layer. A lower cladding structure of the first conductivity type and a GaInP active layer are sequentially epitaxially grown on the current blocking layer and in the stripe-shaped groove. The lower cladding structure includes a first cladding layer of AlGaAs disposed on the current blocking layer and in the stripe-shaped groove and a second cladding layer of AlGaInP which is sufficiently thin not to cause inferior growth of the active layer disposed on the first cladding layer.
摘要翻译： 在电流阻挡层中设置有在第一导电类型的半导体衬底上设置有第二导电类型的电流阻挡层和条形槽电流通路的SBA型可见光半导体激光器件。 第一导电类型的下包层结构和GaInP有源层在电流阻挡层和条形沟槽中顺序地外延生长。 下包层结构包括设置在电流阻挡层和条形槽中的AlGaAs的第一包层和AlGaInP的第二包覆层，该AlGaInP的第二包层足够薄，不会导致设置在第一包层上的有源层的生长不良 。
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公开(公告)号：US4868837A
公开(公告)日：1989-09-19
申请号：US235294
申请日：1988-08-23
申请人： Yoshito Seiwa , Toshitaka Aoyagi
发明人： Yoshito Seiwa , Toshitaka Aoyagi
CPC分类号： H01S5/16 , H01S5/2232
摘要： A semiconductor laser includes an active region which includes a portion having a refractive index distribution with a relatively samll refractive index difference which allows only the fundamental mode of the transverse modes in the neighborhood of the light output facet. The other region of the active region has a refractive index distribution with a large refractive index difference which allows the fundamental mode as well as higher order modes.
摘要翻译： 半导体激光器包括有源区，其包括具有相对折射率差的折射率分布的部分，其仅允许光输出小面附近的横模的基本模式。 有源区域的另一区域具有折射率差大的折射率分布，其允许基模和高阶模。
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