公开(公告)号：US20060214243A1

公开(公告)日：2006-09-28

申请号：US11190911

申请日：2005-07-28

Applicant: Tsunehisa Sakoda ,  Masaomi Yamaguchi ,  Hiroshi Minakata ,  Yoshihiro Sugita ,  Kazuto Ikeda

Inventor： Tsunehisa Sakoda ,  Masaomi Yamaguchi ,  Hiroshi Minakata ,  Yoshihiro Sugita ,  Kazuto Ikeda

IPC: H01L29/94

CPC classification number: H01L21/823857 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7833

Abstract: A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film 18 from being deprived of oxygen, while oxygen anneal is performed after a gate electrode layer 20 has been formed to thereby supplement oxygen. The silicon nitride film 16, which is the permeation preventing film, becomes a silicon oxide nitride film 17 without changing the film thickness, whereby characteristics deterioration of the High-k gate insulation film 18 due to the oxygen loss can be prevented without lowering the performance of the transistor. The semiconductor device having the gate insulation film formed of even a high dielectric constant material can be free from the shift of the threshold voltage.

公开(公告)号：US06998303B2

公开(公告)日：2006-02-14

申请号：US10633534

申请日：2003-08-05

Applicant: Yoshihiro Sugita ,  Yusuke Morisaki ,  Kiyoshi Irino ,  Shiqin Xiao ,  Takayuki Ohba

Inventor： Yoshihiro Sugita ,  Yusuke Morisaki ,  Kiyoshi Irino ,  Shiqin Xiao ,  Takayuki Ohba

IPC: H01L21/76

CPC classification number: H01L21/823857 ,  H01L21/265 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31122 ,  H01L21/31604 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pattern to give damages to the insulating film. By using the mask pattern as a mask, a portion of the insulating film is etched.

Abstract translation: 在半导体衬底的表面上形成由氧化锆或铪形成的绝缘膜。 绝缘膜的部分表面积被掩模图案覆盖。 通过使用掩模图案作为掩模，将离子注入到未被掩模图案覆盖的绝缘膜的区域中，以对绝缘膜造成损害。 通过使用掩模图案作为掩模，蚀刻绝缘膜的一部分。

公开(公告)号：US20050208719A1

公开(公告)日：2005-09-22

申请号：US11133271

申请日：2005-05-20

Applicant: Yoshihiro Sugita

Inventor： Yoshihiro Sugita

IPC: H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/8242 ,  H01L29/51 ,  H01L29/94

CPC classification number: H01L21/28194 ,  H01L21/02145 ,  H01L21/02156 ,  H01L21/02161 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02337 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A p-well (12) is formed on a surface of an Si substrate (11) and element isolation insulating films (13) are formed. Next, a thin SiO2 film (14a) is formed on the whole surface, and an oxide film containing a rare earth metal (for example, lanthanum (La) or yttrium (Y)) and aluminum (Al) is formed thereon as an insulating film (14b). Furthermore, a polysilicon film (15) is formed on the insulating film (14b). After that, the SiO2 film (14a) and the insulating film (14b) are allowed to react with each other by performing a heat treatment, for example, at approximately 1000° C. to form a silicate film containing the rare earth metal and Al. In a word, the SiO2 film (14a) and the insulating film (14b) are allowed to be a single silicate film.

Abstract translation: 在Si衬底（11）的表面上形成p阱（12），形成元件隔离绝缘膜（13）。 接下来，在整个表面上形成薄的SiO 2膜（14a），并且含有稀土金属（例如镧（La）或钇（Y））的氧化物膜和铝 （Al）形成在其上作为绝缘膜（14b）。 此外，在绝缘膜（14b）上形成多晶硅膜（15）。 之后，通过进行例如约1000℃的热处理使SiO 2膜（14a）和绝缘膜（14b）彼此反应以形成 含有稀土金属和Al的硅酸盐膜。 总而言之，SiO 2膜（14a）和绝缘膜（14b）被允许为单一的硅酸盐膜。

公开(公告)号：US20050170665A1

公开(公告)日：2005-08-04

申请号：US11098395

申请日：2005-04-05

Applicant: Yoshihiro Sugita

Inventor： Yoshihiro Sugita

IPC: C23C16/40 ,  C23C16/455 ,  H01L21/316 ,  H01L21/8242 ,  H01L21/31

CPC classification number: H01L21/31645 ,  C23C16/405 ,  C23C16/45531 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/02271 ,  H01L27/10852

Abstract: A method of forming a high-K dielectric film by the MOCVD method using an amine-based organic metal compound precursor is disclosed. According to the present method, a precursor gas including organic metal compound molecules of the amine-based organic metal compound precursor is supplied to a processing space that accommodates a substrate to be processed, the surface of the substrate being exposed so that the amine-base organic metal compound molecules are chemically adsorbed onto the surface of the substrate. Then, a hydrogen gas is supplied to the surface of the substrate, and an oxidization gas is introduced into the processing space to thereby form the high-K dielectric film on the surface of the substrate.

Abstract translation: 公开了一种通过使用胺基有机金属化合物前体的MOCVD法形成高K电介质膜的方法。 根据本方法，将含有胺类有机金属化合物前体的有机金属化合物分子的前体气体供给到容纳被处理基板的处理空间，使基板的表面露出，使得胺基 有机金属化合物分子被化学吸附在基材的表面上。 然后，将氢气供给到基板表面，并将氧化气体引入到处理空间中，从而在基板的表面上形成高K电介质膜。

公开(公告)号：US06740425B2

公开(公告)日：2004-05-25

申请号：US10224831

申请日：2002-08-21

Applicant: Masaru Seita ,  Hideki Tsuchida ,  Masaaki Imanari ,  Yoshihiro Sugita

Inventor： Masaru Seita ,  Hideki Tsuchida ,  Masaaki Imanari ,  Yoshihiro Sugita

IPC: B32B1508

CPC classification number: C23C18/28 ,  H05K3/181 ,  Y10T428/12535 ,  Y10T428/12569

Abstract: A method for forming copper-resin composite materials is disclosed. This method affixes a palladium or palladium-tin catalyst onto resin substrate, and then subjects the catalyst-containing resin to an electroless copper plating bath without performing a catalyst acceleration treatment step.

Abstract translation: 公开了一种形成铜 - 树脂复合材料的方法。 该方法将钯或钯 - 锡催化剂固定在树脂基板上，然后将含催化剂的树脂接受化学镀铜浴，而不进行催化剂加速处理步骤。

公开(公告)号：US07521325B2

公开(公告)日：2009-04-21

申请号：US11190911

申请日：2005-07-28

Applicant: Tsunehisa Sakoda ,  Masaomi Yamaguchi ,  Hiroshi Minakata ,  Yoshihiro Sugita ,  Kazuto Ikeda

Inventor： Tsunehisa Sakoda ,  Masaomi Yamaguchi ,  Hiroshi Minakata ,  Yoshihiro Sugita ,  Kazuto Ikeda

IPC: H01L29/72

CPC classification number: H01L21/823857 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L29/517 ,  H01L29/518 ,  H01L29/7833

Abstract: A permeation preventing film of a silicon nitride film 16 is inserted between a silicon substrate 10 and a High-k gate insulation film 18 to thereby prevent the High-k gate insulation film 18 from being deprived of oxygen, while oxygen anneal is performed after a gate electrode layer 20 has been formed to thereby supplement oxygen. The silicon nitride film 16, which is the permeation preventing film, becomes a silicon oxide nitride film 17 without changing the film thickness, whereby characteristics deterioration of the High-k gate insulation film 18 due to the oxygen loss can be prevented without lowering the performance of the transistor. The semiconductor device having the gate insulation film formed of even a high dielectric constant material can be free from the shift of the threshold voltage.

Abstract translation: 氮化硅膜16的防渗透膜插入在硅衬底10和High-k栅极绝缘膜18之间，从而防止高k栅绝缘膜18被剥夺氧，同时在 形成栅电极层20，从而补充氧气。 作为防渗透膜的氮化硅膜16不改变膜厚而成为氧化硅氮化膜17，由此可以防止由于氧损失导致的高k栅极绝缘膜18的特性恶化，而不降低性能 的晶体管。 具有由高介电常数材料形成的栅极绝缘膜的半导体器件可以没有阈值电压的偏移。

公开(公告)号：US07514316B2

公开(公告)日：2009-04-07

申请号：US11133271

申请日：2005-05-20

Applicant: Yoshihiro Sugita

Inventor： Yoshihiro Sugita

IPC: H01L21/8242

CPC classification number: H01L21/28194 ,  H01L21/02145 ,  H01L21/02156 ,  H01L21/02161 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02337 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31662 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A p-well (12) is formed on a surface of an Si substrate (11) and element isolation insulating films (13) are formed. Next, a thin SiO2 film (14a) is formed on the whole surface, and an oxide film containing a rare earth metal (for example, lanthanum (La) or yttrium (Y)) and aluminum (Al) is formed thereon as an insulating film (14b). Furthermore, a polysilicon film (15) is formed on the insulating film (14b). After that, the SiO2 film (14a) and the insulating film (14b) are allowed to react with each other by performing a heat treatment, for example, at approximately 1000° C. to form a silicate film containing the rare earth metal and Al. In a word, the SiO2 film (14a) and the insulating film (14b) are allowed to be a single silicate film.

Abstract translation: 在Si衬底（11）的表面上形成p阱（12），形成元件隔离绝缘膜（13）。 接下来，在整个表面上形成薄的SiO 2膜（14a），并且在其上形成含有稀土金属（例如镧（La）或钇（Y））和铝（Al）的氧化膜作为绝缘 薄膜（14b）。 此外，在绝缘膜（14b）上形成多晶硅膜（15）。 之后，通过进行例如约1000℃的热处理，使SiO 2膜（14a）和绝缘膜（14b）发生反应，形成含有稀土金属和Al的硅酸盐膜 。 总而言之，使SiO 2膜（14a）和绝缘膜（14b）成为单一的硅酸盐膜。

公开(公告)号：US06894369B2

公开(公告)日：2005-05-17

申请号：US10109001

申请日：2002-03-29

Applicant: Kiyoshi Irino ,  Yusuke Morisaki ,  Yoshihiro Sugita ,  Yoshiaki Tanida ,  Yoshihisa Iba

Inventor： Kiyoshi Irino ,  Yusuke Morisaki ,  Yoshihiro Sugita ,  Yoshiaki Tanida ,  Yoshihisa Iba

IPC: H01L29/78 ,  C23C16/30 ,  C23C16/44 ,  C23C16/455 ,  H01L21/28 ,  H01L21/314 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/088 ,  H01L27/092 ,  H01L29/51 ,  H01L23/58

CPC classification number: H01L21/28194 ,  C23C16/308 ,  C23C16/45525 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02181 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/3144 ,  H01L21/76224 ,  H01L21/823456 ,  H01L21/823462 ,  H01L21/823481 ,  H01L29/517 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An ultra high-speed semiconductor device has a high-K dielectric gate insulator layer, wherein spread of impurities to a Si substrate from a gate electrode through the high-K dielectric gate insulator layer, and spread of oxygen and metallic elements from the high-K dielectric gate insulator layer to the Si substrate or the gate electrode are suppressed by arranging the high-K dielectric film sandwiched by nitrogen atomic layers on the Si substrate that is covered by an oxygen atomic layer.

Abstract translation: 超高速半导体器件具有高K电介质栅极绝缘体层，其中通过高K电介质栅极绝缘体层从栅电极向Si衬底扩散杂质，并且从高电介质栅极绝缘体层扩散氧和金属元素， 通过在被氧原子层覆盖的Si衬底上布置由氮原子层夹持的高K电介质膜来抑制Si衬底或栅电极的K介质栅极绝缘体层。

公开(公告)号：US06780699B2

公开(公告)日：2004-08-24

申请号：US10359250

申请日：2003-02-06

Applicant: Yasuyuki Tamura ,  Yusuke Morisaki ,  Yoshihiro Sugita ,  Kiyoshi Irino ,  Takayuki Aoyama ,  Chikako Yoshida ,  Yoshihiro Sugiyama ,  Hitoshi Tanaka ,  Kanetake Takasaki

Inventor： Yasuyuki Tamura ,  Yusuke Morisaki ,  Yoshihiro Sugita ,  Kiyoshi Irino ,  Takayuki Aoyama ,  Chikako Yoshida ,  Yoshihiro Sugiyama ,  Hitoshi Tanaka ,  Kanetake Takasaki

IPC: H01L218238

CPC classification number: H01L21/823462 ,  C23C16/401 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31612 ,  H01L28/56 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

Abstract: A semiconductor device in which the insulation characteristics of an insulating film of multilayer structure including a lower-layer insulating film and a high-dielectric-constant film formed on the lower-layer insulating film are ensured, and a method for fabricating such a semiconductor device. A silicon oxide film or a silicon oxynitride film is formed on a semiconductor substrate as a lower-layer insulating film and part of the lower-layer insulating film is removed. Then a high-dielectric-constant film the dielectric constant of which is higher than that of the lower-layer insulating film is formed on the exposed semiconductor substrate and the lower-layer insulating film. If the lower-layer insulating film is a silicon oxide film, then a metallic compound not including chlorine is used for forming this high-dielectric-constant film. If the lower-layer insulating film is a silicon oxynitride film, then a metallic chloride can be used for forming this high-dielectric-constant film.

Abstract translation: 一种半导体器件，其中确保了在下层绝缘膜上形成的包括下层绝缘膜和高介电常数膜的多层结构的绝缘膜的绝缘特性，以及制造这种半导体器件的方法 。 在作为下层绝缘膜的半导体基板上形成氧化硅膜或氧氮化硅膜，除去下层绝缘膜的一部分。 然后在暴露的半导体衬底和下层绝缘膜上形成其介电常数高于下层绝缘膜的介电常数的高介电常数膜。 如果下层绝缘膜是氧化硅膜，则使用不含氯的金属化合物来形成该高介电常数膜。 如果下层绝缘膜是氮氧化硅膜，则可以使用金属氯化物来形成该高介电常数膜。

公开(公告)号：US5157582A

公开(公告)日：1992-10-20

申请号：US718226

申请日：1991-06-20

Applicant: Yoshihiro Sugita ,  Masami Iwahara

Inventor： Yoshihiro Sugita ,  Masami Iwahara

IPC: H01C17/242 ,  H01G4/30 ,  H01G4/38 ,  H01G4/40 ,  H01L21/70

CPC classification number: H01G4/40 ,  H01G4/385 ,  H01L21/705

Abstract: A surface-mountable composite electronic part comprising a capacitor element which includes a dielectric ceramic member and a film resistor combined therewith for forming an RC circuit. A plurality of external terminals are formed on both end surfaces of the capacitor element for extracting capacitance, while a plurality of wiring patterns are formed on a first major surface of the capacitor element to be connected with the external terminals. The film resistor is formed on the first major surface of the capacitor element on a protective film made of a glass material, and connects a pair of the wiring patterns with each other. When the film resistor is trimmed with a laser beam, the protective film prevents the dielectric ceramic member forming the capacitor element from being harmed by the laser beam.

Abstract translation: 一种可表面安装的复合电子部件，包括电容器元件，该电容器元件包括介电陶瓷元件和与其组合的膜电阻器，用于形成RC电路。 在用于提取电容的电容器元件的两个端面上形成有多个外部端子，而在与外部端子连接的电容器元件的第一主表面上形成多个布线图案。 薄膜电阻器形成在由玻璃材料制成的保护膜上的电容器元件的第一主表面上，并且将一对布线图案彼此连接。 当用激光束修整薄膜电阻器时，保护膜防止形成电容器元件的电介质陶瓷构件受到激光束的伤害。