公开(公告)号：US5655050A

公开(公告)日：1997-08-05

申请号：US659623

申请日：1996-06-06

申请人： Yoshiki Yamamoto ,  Tetsuya Mizushima ,  Akira Iketani ,  Yasunori Kawakami ,  Chiyoko Matsumi

发明人： Yoshiki Yamamoto ,  Tetsuya Mizushima ,  Akira Iketani ,  Yasunori Kawakami ,  Chiyoko Matsumi

IPC分类号： G11B20/12 ,  G11B5/008 ,  G11B5/09 ,  G11B20/18 ,  G11B27/28 ,  G11B27/30 ,  H04N5/926 ,  H04N5/935 ,  H04N5/945 ,  H04N5/76

CPC分类号： G11B20/1208 ,  G11B27/3027 ,  H04N5/9261 ,  H04N5/935 ,  G11B20/1833 ,  G11B2220/90 ,  G11B5/0086 ,  G11B5/09 ,  H04N5/945

摘要： A digital signal recording apparatus for recording digital signal in synchronization blocks includes a generator for generating a synchronization pattern for indicating the beginning of each synchronization block, a generator for generating an ID data for indicating the sequence of the synchronization blocks, a generator for generating an ID parity for checking the ID data, a generator for generating additional information signal, which is a track width data, a generator for generating audio and video signals. Above data are applied to a pattern generator for generating track data comprising plural consecutive normal synchronization blocks immediately preceded by two mini-synchronization blocks and immediately followed by one mini-synchronization block. Each mini-synchronization block includes the synchrionization pattern, ID data, ID parity, and additional information signal. Each normal synchronization block includes the synchronization pattern, ID data, ID parity, and audio and video signal.

摘要翻译： 用于在同步块中记录数字信号的数字信号记录装置包括用于产生用于指示每个同步块的开始的同步模式的发生器，用于产生用于指示同步块的序列的ID数据的发生器，用于生成 用于检查ID数据的ID奇偶校验，用于产生作为轨道宽度数据的附加信息信号的发生器，用于产生音频和视频信号的发生器。 上述数据被应用于模式发生器，用于产生包括紧接在两个小型同步块之前的多个连续正常同步块的跟踪数据，并且紧随其后的是一个小型同步块。 每个小型同步块包括同步模式，ID数据，ID奇偶校验和附加信息信号。 每个正常同步块包括同步模式，ID数据，ID奇偶校验以及音频和视频信号。

公开(公告)号：US08932590B2

公开(公告)日：2015-01-13

申请号：US13067627

申请日：2011-06-15

申请人： Kazuo Teramoto ,  Toshio Yoshioka ,  Masaaki Shimagaki ,  Takeo Matsunase ,  Koji Watanabe ,  Yuji Ueda ,  Yoshiki Yamamoto

发明人： Kazuo Teramoto ,  Toshio Yoshioka ,  Masaaki Shimagaki ,  Takeo Matsunase ,  Koji Watanabe ,  Yuji Ueda ,  Yoshiki Yamamoto

IPC分类号： A61K39/395 ,  B01J20/26 ,  B01J20/28 ,  B01J20/32 ,  B01J20/30 ,  A61M1/36

CPC分类号： B01J20/26 ,  A61M1/3679 ,  B01J20/261 ,  B01J20/262 ,  B01J20/265 ,  B01J20/28014 ,  B01J20/28016 ,  B01J20/28023 ,  B01J20/2803 ,  B01J20/28033 ,  B01J20/28045 ,  B01J20/28057 ,  B01J20/3092 ,  B01J20/321 ,  B01J20/3212 ,  B01J20/3217 ,  B01J20/3242 ,  B01J20/3251 ,  B01J20/3272 ,  B01J20/3293 ,  B01J2220/58 ,  B01J2220/60

摘要： An adsorbent for immunosuppressive substance, which can adsorb an excessive immunosuppressive substance directly from a body fluid, can carry out extracorporeal perfusion safely and can be utilized in treatment of cancer. The excessive immunosuppressive substance may be involved in growth of cancer cells. The adsorbent for immunosuppressive substance includes a water-insoluble carrier and a hydrophilic amino group immobilized to the water-insoluble carrier. An extracorporeal perfusion column contains the adsorbent of the invention. A method for treating cancer carries out extracorporeal perfusion using the extracorporeal perfusion column. A method of adsorbing the transforming growth factor β which is combined with another protein, includes adsorbing the transforming growth factor β and protein on an adsorbent containing a water-insoluble carrier to which quaternary ammonium groups each having 3 to 18 carbon atoms per one nitrogen atom are attached, and having a specific surface area of 0.1 m2 or more per gram.

摘要翻译： 可以直接从体液吸附过量免疫抑制物质的免疫抑制物质吸附剂可以安全地进行体外灌注，可用于治疗癌症。 过量的免疫抑制物质可能参与癌细胞的生长。 用于免疫抑制物质的吸附剂包括固定在水不溶性载体上的水不溶性载体和亲水性氨基。 体外灌注柱包含本发明的吸附剂。 一种治疗癌症的方法使用体外灌注柱进行体外灌注。 吸附转化生长因子的方法 其与另一种蛋白质组合，包括吸收转化生长因子和bgr; 和含有每个氮原子上具有3〜18个碳原子的季铵基的水不溶性载体的吸附剂上的蛋白质，并且比表面积为0.1m 2以上。

公开(公告)号：US08063452B2

公开(公告)日：2011-11-22

申请号：US11574483

申请日：2005-08-30

申请人： Akira Toriumi ,  Koji Kita ,  Kazuyuki Tomida ,  Yoshiki Yamamoto

发明人： Akira Toriumi ,  Koji Kita ,  Kazuyuki Tomida ,  Yoshiki Yamamoto

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119 ,  H01L23/58 ,  H01L21/336 ,  H01L21/3205 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L29/517 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/31604 ,  H01L21/31645

摘要： A gate insulating film having a high dielectric constant, a semiconductor device provided with the gate insulating film, and a method for manufacturing such film and device are provided. The semiconductor device is provided with a group 14 (IVA) semiconductor board and a first oxide layer. The first oxide layer is composed of MO2 existing on the board, where M is a first metal species selected from the group 4 (IVB); and M′xOy, where M′ is a second metal species selected from the group 3 (IIIB) and a group composed of lanthanide series, and x and y are integers decided by the oxidation number of M.

摘要翻译： 提供具有高介电常数的栅极绝缘膜，设置有栅极绝缘膜的半导体器件及其制造方法。 半导体器件具有第14族（IVA）半导体基板和第1氧化物层。 第一氧化物层由存在于板上的MO2组成，其中M是选自第4组（IVB）的第一种金属; 和M'xOy，其中M'是选自组3（IIIB）的第二种金属和由镧系元素组成的组，x和y是由氧化数M决定的整数。

公开(公告)号：US20110240560A1

公开(公告)日：2011-10-06

申请号：US13067627

申请日：2011-06-15

申请人： Kazuo Teramoto ,  Toshio Yoshioka ,  Masaaki Shimagaki ,  Takeo Matsunase ,  Koji Watanabe ,  Yuji Ueda ,  Yoshiki Yamamoto

发明人： Kazuo Teramoto ,  Toshio Yoshioka ,  Masaaki Shimagaki ,  Takeo Matsunase ,  Koji Watanabe ,  Yuji Ueda ,  Yoshiki Yamamoto

IPC分类号： B01D15/00

CPC分类号： B01J20/26 ,  A61M1/3679 ,  B01J20/261 ,  B01J20/262 ,  B01J20/265 ,  B01J20/28014 ,  B01J20/28016 ,  B01J20/28023 ,  B01J20/2803 ,  B01J20/28033 ,  B01J20/28045 ,  B01J20/28057 ,  B01J20/3092 ,  B01J20/321 ,  B01J20/3212 ,  B01J20/3217 ,  B01J20/3242 ,  B01J20/3251 ,  B01J20/3272 ,  B01J20/3293 ,  B01J2220/58 ,  B01J2220/60

摘要： An adsorbent for immunosuppressive substance, which can adsorb an excessive immunosuppressive substance directly from a body fluid, can carry out extracorporeal perfusion safely and can be utilized in treatment of cancer. The excessive immunosuppressive substance may be involved in growth of cancer cells. The adsorbent for immunosuppressive substance includes a water-insoluble carrier and a hydrophilic amino group immobilized to the water-insoluble carrier. An extracorporeal perfusion column contains the adsorbent of the invention. A method for treating cancer carries out extracorporeal perfusion using the extracorporeal perfusion column. A method of adsorbing the transforming growth factor β which is combined with another protein, includes adsorbing the transforming growth factor β and protein on an adsorbent containing a water-insoluble carrier to which quaternary ammonium groups each having 3 to 18 carbon atoms per one nitrogen atom are attached, and having a specific surface area of 0.1 m2 or more per gram.

摘要翻译： 可以直接从体液吸附过量免疫抑制物质的免疫抑制物质吸附剂可以安全地进行体外灌注，可用于治疗癌症。 过量的免疫抑制物质可能参与癌细胞的生长。 用于免疫抑制物质的吸附剂包括固定在水不溶性载体上的水不溶性载体和亲水性氨基。 体外灌注柱包含本发明的吸附剂。 一种治疗癌症的方法使用体外灌注柱进行体外灌注。 吸附转化生长因子的方法 其与另一种蛋白质组合，包括吸收转化生长因子和bgr; 和含有每个氮原子上具有3〜18个碳原子的季铵基的水不溶性载体的吸附剂上的蛋白质，并且比表面积为0.1m 2以上。

公开(公告)号：US20100291402A1

公开(公告)日：2010-11-18

申请号：US12846865

申请日：2010-07-30

申请人： Takemi Muroga ,  Yasuyuki Ito ,  Koji Aoyagi ,  Yoshiki Yamamoto ,  Kenji Yokomizo ,  Katsumi Nomura

发明人： Takemi Muroga ,  Yasuyuki Ito ,  Koji Aoyagi ,  Yoshiki Yamamoto ,  Kenji Yokomizo ,  Katsumi Nomura

IPC分类号： B32B15/20

CPC分类号： H05K1/09 ,  C22C9/02 ,  C22F1/08 ,  H05K1/0393 ,  H05K2201/0355 ,  H05K2203/0143 ,  H05K2203/1105 ,  Y10T428/12431

摘要： A rolled copper foil applied with a recrystallization annealing after a final cold rolling step and having a crystal grain alignment satisfying a ratio of [a]/[b]≧3, where [a] and [b] are normalized average intensities of a {111}Cu plane diffraction of a copper crystal by β-scanning at α=35° and 74°, respectively, in an X-ray diffraction pole figure measurement to a rolled surface is manufactured by controlling a total working ratio in the final cold rolling step before the recrystallization annealing to be 94% or more; and controlling a working ratio per one pass in the final cold rolling step to be 15 to 50%.

摘要翻译： 在最终冷轧步骤之后进行再结晶退火并且具有满足[a] / [b]≥3的比例的晶粒取向的轧制铜箔，其中[a]和[b]是{ 111}在X射线衍射极数测量中，通过在最终冷中控制总的工作比来制造在α= 35°和74°的铜晶体的Cu平面衍射 再结晶退火前的轧制步骤为94％以上; 并且在最终冷轧步骤中将每一道次的加工率控制为15〜50％。

公开(公告)号：US09293347B2

公开(公告)日：2016-03-22

申请号：US14381562

申请日：2012-05-18

申请人： Yoshiki Yamamoto ,  Hideki Makiyama ,  Takaaki Tsunomura ,  Toshiaki Iwamatsu

发明人： Yoshiki Yamamoto ,  Hideki Makiyama ,  Takaaki Tsunomura ,  Toshiaki Iwamatsu

IPC分类号： H01L21/32 ,  H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L21/32 ,  H01L29/0847 ,  H01L29/42376 ,  H01L29/42384 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66772 ,  H01L29/78 ,  H01L29/7834 ,  H01L29/7836 ,  H01L29/7848 ,  H01L29/786 ,  H01L29/78618 ,  H01L29/78627

摘要： The semiconductor device has a gate electrode GE formed on a substrate via a gate insulating film GI and a source/drain semiconductor layer EP1 formed on the substrate. The upper surface of the semiconductor layer EP1 is positioned higher than the upper surface of the substrate straight below the gate electrode GE. And, end parts of the gate electrode GE in a gate length direction are positioned on the semiconductor layer EP1.

公开(公告)号：US08361255B2

公开(公告)日：2013-01-29

申请号：US12603804

申请日：2009-10-22

申请人： Hiroaki Takano ,  Yoshiki Yamamoto ,  Koichi Kotoku ,  Chingping Tong

发明人： Hiroaki Takano ,  Yoshiki Yamamoto ,  Koichi Kotoku ,  Chingping Tong

IPC分类号： C22F1/08 ,  C22C9/06

CPC分类号： C22C9/06 ,  C22C9/04 ,  C22F1/08

摘要： A copper alloy material having: 1.0 to 5.0 mass % of Ni; 0.2 to 1.0 mass % of Si; 1.0 to 5.0 mass % of Zn; 0.1 to 0.5 mass % of Sn; 0.003 to 0.3 mass % of P; and the balance consisting of Cu and an unavoidable impurity. The mass ratio between Ni and each of Si, Zn and Sn is to be Ni/Si=4 to 6, Zn/Ni=0.5 or more, and Sn/Ni=0.05 to 0.2.

摘要翻译： 具有1.0〜5.0质量％的Ni的铜合金材料; Si：0.2〜1.0质量％ 1.0〜5.0质量％的Zn; Sn：0.1〜0.5质量％ 0.003〜0.3质量％ 余量由Cu和不可避免的杂质组成。 Ni与Si，Zn，Sn的质量比为Ni / Si = 4〜6，Zn / Ni = 0.5以上，Sn / Ni = 0.05〜0.2。

公开(公告)号：US20120193726A1

公开(公告)日：2012-08-02

申请号：US13500863

申请日：2009-10-06

申请人： Tomohiro Yamashita ,  Yukio Nishida ,  Takashi Hayashi ,  Yoshiki Yamamoto ,  Masao Inoue

发明人： Tomohiro Yamashita ,  Yukio Nishida ,  Takashi Hayashi ,  Yoshiki Yamamoto ,  Masao Inoue

IPC分类号： H01L27/092 ,  H01L21/8238 ,  H01L21/336

CPC分类号： H01L21/823857 ,  H01L21/02181 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/28176 ,  H01L21/28194 ,  H01L29/513 ,  H01L29/517

摘要： A semiconductor device including an n-channel-type MISFET (Qn) having an Hf-containing insulating film (5), which is a high dielectric constant gate insulating film containing hafnium, a rare-earth element, and oxygen as main components, and a gate electrode (GE1), which is a metal gate electrode, is manufactured. The Hf-containing insulating film (5) is formed by forming a first Hf-containing film containing hafnium and oxygen as main components, a rare-earth containing film containing a rare-earth element as a main component, and a second Hf-containing film containing hafnium and oxygen as main components sequentially from below and then causing these to react with one another.

摘要翻译： 包括具有含Hf的绝缘膜（5）的n沟道型MISFET（Qn）的半导体器件，其是含有铪，稀土元素和氧作为主要成分的高介电常数栅极绝缘膜，以及 制造作为金属栅电极的栅电极（GE1）。 含Hf绝缘膜（5）通过形成含有铪和氧作为主要成分的第一含Hf膜，含有稀土元素作为主要成分的稀土类膜，第二Hf含 从下面顺序地含有铪和氧作为主要成分的膜，然后使它们彼此反应。

公开(公告)号：US20100102395A1

公开(公告)日：2010-04-29

申请号：US12572646

申请日：2009-10-02

申请人： Yoshiki Yamamoto ,  Yukio Nishida ,  Jiro Yugami

发明人： Yoshiki Yamamoto ,  Yukio Nishida ,  Jiro Yugami

IPC分类号： H01L27/092 ,  H01L21/28 ,  H01L21/8238

CPC分类号： H01L21/823828 ,  H01L21/823857

摘要： Provided is a semiconductor device capable of having a single metal/dual high-k structure with a good shape and having flat band voltages suited for nMOS and pMOS, respectively. The semiconductor device according to the one embodiment of the present invention has a first conductivity type MOSFET and a second conductivity type MOSFET. The first and second conductivity type MOSFETs are each equipped with a first insulating film formed over a semiconductor substrate, a second insulating film formed over the first insulating film and made of an insulating material having a higher dielectric constant than the first insulating film, and a gate electrode formed over the second insulating film and having, as a lower layer of the gate electrode, a metal layer containing a material which diffuses into the second insulating film to control a work function thereof. The second conductivity type MOSFET is equipped further with a diffusion barrier film formed between the first insulating film and the second insulating film to prevent diffusion of a work-function controlling material into the interface of the first insulating film.

摘要翻译： 提供了能够分别具有适合于nMOS和pMOS的具有良好形状并具有平坦带电压的单个金属/双高k结构的半导体器件。 根据本发明的一个实施例的半导体器件具有第一导电型MOSFET和第二导电型MOSFET。 第一导电型MOSFET和第二导电型MOSFET分别配置有形成在半导体基板上的第一绝缘膜，形成在第一绝缘膜上并且由具有比第一绝缘膜高的介电常数的绝缘材料制成的第二绝缘膜， 栅电极形成在第二绝缘膜上，并且具有作为栅电极的下层的含有扩散到第二绝缘膜中以控制其功函的材料的金属层。 第二导电型MOSFET还具有形成在第一绝缘膜和第二绝缘膜之间的扩散阻挡膜，以防止功函数控制材料扩散到第一绝缘膜的界面中。

公开(公告)号：US20100037996A1

公开(公告)日：2010-02-18

申请号：US12603804

申请日：2009-10-22

申请人： Hiroaki TAKANO ,  Yoshiki Yamamoto ,  Koichi Kotoku ,  Chingping Tong

发明人： Hiroaki TAKANO ,  Yoshiki Yamamoto ,  Koichi Kotoku ,  Chingping Tong

IPC分类号： C22F1/08

CPC分类号： C22C9/06 ,  C22C9/04 ,  C22F1/08

摘要： A copper alloy material having: 1.0 to 5.0 mass % of Ni; 0.2 to 1.0 mass % of Si; 1.0 to 5.0 mass % of Zn; 0.1 to 0.5 mass % of Sn; 0.003 to 0.3 mass % of P; and the balance consisting of Cu and an unavoidable impurity. The mass ratio between Ni and each of Si, Zn and Sn is to be Ni/Si=4 to 6, Zn/Ni=0.5 or more, and Sn/Ni=0.05 to 0.2.

摘要翻译： 具有1.0〜5.0质量％的Ni的铜合金材料; Si：0.2〜1.0质量％ 1.0〜5.0质量％的Zn; Sn：0.1〜0.5质量％ 0.003〜0.3质量％ 余量由Cu和不可避免的杂质组成。 Ni与Si，Zn，Sn的质量比为Ni / Si = 4〜6，Zn / Ni = 0.5以上，Sn / Ni = 0.05〜0.2。