摘要:
A charged particle beam apparatus is provided with an aperture device which includes a plurality of slit plates. Each of the slit plates includes a plurality of slits having different widths. The slit plates are superimposed in a direction of the axis of a charged particle beam so that the corresponding slits in the slit plates overlap to define an aperture which controls a beam current.
摘要:
A specimen or substrate cutting method of cutting or processing a predetermined portion of a specimen or substrate in a direction of depth thereof by generating a focused charged particle beam from a particle beam source and irradiating the predetermined portion of the specimen or substrate with the focused charged particle beam is disclosed in which a particle species of the charged particle beam is selected such that each of the melting point of the particle species itself and the melting point of an alloy or compound of the particle species and constituent atoms of the specimen or substrate is not lower than 3/2 times of the temperature of the specimen or substrate in units of absolute temperature. A secondary ion mass-spectroscopic analysis method is also disclosed in which the charged particle beam is used as a probe to mass-analyze secondary charged ion successively generated from the cut portion of the specimen or substrate.
摘要:
In an ion-beam machining method and apparatus of effecting sputtering by deflecting a focused ion beam and scanning it on a material surface, the relationship between the diameter d of the beam on the material surface and the height h of a stepped portion formed by each beam scan is changed from h.gtoreq.d to h
摘要:
A method for device transplantation includes the conveyance of a microminiature device, which has been premanufactured, to a desired place located on a sample, observation and fabrication of the new device with a focused beam, and repair of passive elements or active elements located on the sample. Additionally, the new microminiature devices may be transplanted based on the observed results.
摘要:
Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode (1) and the temperature of a gas injection port part (3) of a gas supply unit.
摘要:
Provided is a gas field ionization ion source capable of emitting heavy ions with high brightness which are suitable for processing a sample. The gas field ionization ion source according to the present invention includes a temperature controller individually controlling the temperature of the tip end of an emitter electrode (1) and the temperature of a gas injection port part (3) of a gas supply unit.
摘要:
The charged particle beam microscope is configured of: a gas field ionization ion source (1); a focusing lens (5) which accelerates and focuses ions that have been discharged from the ion source; a movable first aperture (6) which limits the ion beam that has passed through the focusing lens; a first deflector (35) which scans or aligns the ion beam that has passed through the first aperture; a second deflector (7) which deflects the ion beam that has passed through the first aperture; a second aperture (36) which limits the ion beam that has passed through the first aperture; an objective lens (8) which focuses, on a sample, the ion beam that has passed through the first aperture; and a means for measuring the signal, which is substantially proportional to the current of the ion beam that has passed through the second aperture.
摘要:
The invention is concerned with a power supply for the lens for fine adjustment among the beam-focusing lenses in an ion microbeam apparatus, and is concerned with the control thereof. In this ion microbeam apparatus, the power supply is provided for the lens for fine adjustment in addition to the power supply for the lens for rough adjustment. The power supply is served with a potential that so controls the beam as to have an optimum diameter, responsive to the signals from the ion beam detector and from the beam deflector means.
摘要:
In an ion micro beam apparatus which consists of an ion source, a beam focusing system which accelerates, focuses, mass-separates and deflects the ions emitted from said ion source, and a specimen plate for finely moving the specimen, the improvement comprising a mass separator which is constituted by: at least two stages of focusing lenses in said beam focusing system; four stages of E.times.B deflectors arranged between the two stages of lenses, each of said E.times.B deflectors being comprised of a pair of electrodes and a pair of magnetic pole pieces to generate an electric field and a magnetic field in the directions perpendicular to an ion optical axis, wherein among the four stages of E.times.B deflectors, the electric fields and magnetic fields generated by the E.times.B deflectors of the second and third stages as counted from the side of the ion source are set to be in parallel with, but opposite to, the electric field and magnetic field generated by the E.times.B deflector of the first stage, and the electric field and magnetic field of the E.times.B deflector of the fourth stage are set to be in parallel with, and in the same directions as, the electric field and magnetic field generated by the E.times.B deflector of the first stage; and a mass separating aperture which is located between the E.times.B deflector of the second stage and the E.times.B deflector of the third stage as counted from the side of the ion source, to mass-separate the ions.
摘要:
A liquid metal ion source is disclosed, wherein it comprises an ion emitter tip, ion source material holder means holding ion source material for supplying liquid metal ion source material to said ion emitter tip, ion extracting means for extracting ions from said ion emitter tip, when a voltage is applied between the ion extracting means and the ion emitter tip, the pulsing means for pulsing the relative voltage applied between the ion extracting means and the ion emitter tip. A DC voltage corresponding to the threshold voltage V.sub.th for ion beam extraction is applied between the ion emitter tip and the extracting electrode, what permits to extract an ion beam having a high current density by superposing a pulsed voltage on the DC voltage.