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17 条记录 (耗时 0.027 秒)

    Flexible printed wiring board
    4.
    发明授权
    Flexible printed wiring board 有权
    柔性印刷线路板

    公开(公告)号：US08309853B2

    公开(公告)日：2012-11-13

    申请号：US12526917

    申请日：2008-02-15

    申请人： Yoshio Oka ,  Takashi Kasuga ,  Jinjoo Park ,  Kouki Nakama

    发明人： Yoshio Oka ,  Takashi Kasuga ,  Jinjoo Park ,  Kouki Nakama

    IPC分类号： H05K1/00

    CPC分类号： H05K3/4685 ,  H05K1/0393 ,  H05K1/095 ,  H05K1/118 ,  H05K3/281 ,  H05K3/4069 ,  H05K3/4664 ,  H05K2201/0394 ,  H05K2201/10363 ,  H05K2203/1581

    摘要： A flexible printed wiring board includes a substrate, conductor wirings, a coverlay film, a jumper wiring, and through holes. The conductor wirings are disposed on a first surface of the substrate. The coverlay film covers at least part of the conductor wirings. The jumper wiring electrically connects the conductor wirings to each other. The through holes are formed in the substrate and respectively open to the surfaces of the conductor wirings. The jumper wiring is composed of a hardened material of a conductive paste and is formed so that a second surface of the substrate is continuous with respective surfaces of the conductor wirings to which the through holes open.

    摘要翻译： 柔性印刷电路板包括基板，导体布线，覆盖膜，跳线布线和通孔。 导体布线设置在基板的第一表面上。 覆盖膜覆盖导体布线的至少一部分。 跳线将导体布线彼此电连接。 通孔形成在基板中并分别向导体配线的表面开口。 跳线布线由导电浆料的硬化材料构成，并且形成为使得基板的第二表面与通孔打开的导体布线的各个表面连续。

    FLEXIBLE PRINTED WIRING BOARD
    5.
    发明申请
    FLEXIBLE PRINTED WIRING BOARD 有权
    柔性印刷接线板

    公开(公告)号：US20100116525A1

    公开(公告)日：2010-05-13

    申请号：US12526917

    申请日：2008-02-15

    申请人： Yoshio Oka ,  Takashi Kasuga ,  Jinjoo Park ,  Kouki Nakama

    发明人： Yoshio Oka ,  Takashi Kasuga ,  Jinjoo Park ,  Kouki Nakama

    IPC分类号： H05K1/02

    CPC分类号： H05K3/4685 ,  H05K1/0393 ,  H05K1/095 ,  H05K1/118 ,  H05K3/281 ,  H05K3/4069 ,  H05K3/4664 ,  H05K2201/0394 ,  H05K2201/10363 ,  H05K2203/1581

    摘要： A flexible printed wiring board includes a substrate, conductor wirings, a coverlay film, a jumper wiring, and through holes. The conductor wirings are disposed on a first surface of the substrate. The coverlay film covers at least part of the conductor wirings. The jumper wiring electrically connects the conductor wirings to each other. The through holes are formed in the substrate and respectively open to the surfaces of the conductor wirings. The jumper wiring is composed of a hardened material of a conductive paste and is formed so that a second surface of the substrate is continuous with respective surfaces of the conductor wirings which the through holes open.

    摘要翻译： 柔性印刷电路板包括基板，导体布线，覆盖膜，跳线布线和通孔。 导体布线设置在基板的第一表面上。 覆盖膜覆盖导体布线的至少一部分。 跳线将导体布线彼此电连接。 通孔形成在基板中并分别向导体配线的表面开口。 跳线布线由导电膏的硬化材料构成，并且形成为使得基板的第二表面与通孔打开的导体布线的各个表面连续。

    Solid-state imaging device and method for manufacturing solid-state imaging device
    6.
    发明申请
    Solid-state imaging device and method for manufacturing solid-state imaging device 审中-公开
    固态成像装置及制造固态成像装置的方法

    公开(公告)号：US20080054311A1

    公开(公告)日：2008-03-06

    申请号：US11975779

    申请日：2007-10-22

    申请人： Takashi Kasuga

    发明人： Takashi Kasuga

    IPC分类号： H01L27/148 ,  H01L21/00

    CPC分类号： H01L27/14843 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14687 ,  H01L27/14806 ,  H01L27/14812

    摘要： A plurality of optical sensors (4) are arranged in a surface region of a semiconductor substrate (6) in a matrix pattern, and electric charge generated by the optical sensors (4) is transferred by first and second transfer electrodes (12 and 14) embedded under the optical sensors (4). The semiconductor substrate (6) is constructed by laminating a support substrate (16) composed of silicon, a buffer layer (18), and a thin silicon layer (20) composed of single-crystal silicon. p− regions (26) (overflow barrier) and n-type regions (28) which function as transfer paths are formed under the optical sensors (4). The first and the second transfer electrodes (12 and 14) are disposed between the buffer layer (18) and the n-type regions (28), and an insulating film (30) is interposed between the n-type regions (28) and the first and the second transfer electrodes (12 and 14). In this structure, the light-receiving area is large since the transfer electrodes are not disposed in the front region. Accordingly, the sensitivity can be ensured even when the size of the optical sensors (4) is reduced for increasing the number of pixels.

    摘要翻译： 多个光学传感器（4）以矩阵图形布置在半导体衬底（6）的表面区域中，由光学传感器（4）产生的电荷由第一和第二传输电极（12和14）传送， 嵌入在光学传感器（4）下面。 半导体衬底（6）通过层叠由硅组成的支撑衬底（16），缓冲层（18）和由单晶硅构成的薄硅层（20）构成。 在光学传感器（4）的下面形成有用作传输路径的p-区（26）（溢流栅）和n型区（28）。 第一和第二转移电极（12和14）设置在缓冲层（18）和n型区域（28）之间，并且绝缘膜（30）插入在n型区域（28）和 第一和第二转印电极（12和14）。 在这种结构中，由于转印电极未设置在前部区域，所以光接收面积很大。 因此，即使当光学传感器（4）的尺寸减小以增加像素数量时，也可以确保灵敏度。

    Solid-state imaging device and method for manufacturing solid-state imaging device
    7.
    发明授权
    Solid-state imaging device and method for manufacturing solid-state imaging device 有权

    公开(公告)号：US07285808B2

    公开(公告)日：2007-10-23

    申请号：US10491520

    申请日：2002-10-02

    申请人： Takashi Kasuga

    发明人： Takashi Kasuga

    IPC分类号： H01L27/148 ,  H01L29/74 ,  H01L29/768

    CPC分类号： H01L27/14843 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14687 ,  H01L27/14806 ,  H01L27/14812

    摘要： A plurality of optical sensors (4) are arranged in a surface region of a semiconductor substrate (6) in a matrix pattern, and electric charge generated by the optical sensors (4) is transferred by first and second transfer electrodes (12 and 14) embedded under the optical sensors (4). The semiconductor substrate (6) is constructed by laminating a support substrate (16) composed of silicon, a buffer layer (18), and a thin silicon layer (20) composed of single-crystal silicon. p− regions (26) (overflow barrier) and n-type regions (28) which function as transfer paths are formed under the optical sensors (4). The first and the second transfer electrodes (12 and 14) are disposed between the buffer layer (18) and the n-type regions (28), and an insulating film (30) is interposed between the n-type regions (28) and the first and the second transfer electrodes (12 and 14). In this structure, the light-receiving area is large since the transfer electrodes are not disposed in the front region. Accordingly, the sensitivity can be ensured even when the size of the optical sensors (4) is reduced for increasing the number of pixels.

    Conductive silver paste and conductive film formed using the same
    8.
    发明申请
    Conductive silver paste and conductive film formed using the same 有权
    导电银浆和使用其形成的导电膜

    公开(公告)号：US20050194577A1

    公开(公告)日：2005-09-08

    申请号：US11068829

    申请日：2005-03-02

    申请人： Takashi Kasuga ,  Kohei Shimoda ,  Masahiro Yamakawa

    发明人： Takashi Kasuga ,  Kohei Shimoda ,  Masahiro Yamakawa

    IPC分类号： C08K7/06 ,  C08K7/18 ,  C08K9/04 ,  C08K13/06 ,  H01B1/00 ,  H01B1/22 ,  H05K1/09 ,  H01C1/00

    CPC分类号： H05K1/095 ,  H01B1/22

    摘要： A conductive silver paste according to the present invention comprises epoxy resin, flake-shaped silver powders having an average particle diameter of 0.5 to 50 μm, and spherical silver powders, each having its surface coated with organic matter, having an average particle diameter of not more than 1 μm, and a conductive film according to the present invention is formed by printing or applying the conductive silver paste on a surface of a base material, followed by drying, and then thermosetting the epoxy resin.

    摘要翻译： 根据本发明的导电性银糊剂包含环氧树脂，平均粒径为0.5〜50μm的片状银粉末，其表面被覆有有机物的平均粒径不为平均粒径的球状银粉末 大于1μm，根据本发明的导电膜通过将导电性银膏印刷或涂布在基材的表面上，然后干燥而形成，然后使环氧树脂热固化。

    Delineating method employing electron ray beam
    9.
    发明授权
    Delineating method employing electron ray beam 失效
    使用电子束的描绘方法

    公开(公告)号：US5933212A

    公开(公告)日：1999-08-03

    申请号：US913451

    申请日：1997-08-27

    申请人： Takashi Kasuga

    发明人： Takashi Kasuga

    IPC分类号： H01L21/027 ,  H01J37/302 ,  G03B27/72 ,  A61N5/00

    CPC分类号： H01J37/3026 ,  H01J2237/30461 ,  H01J2237/31769

    摘要： A proximity effect correction method used in a delineation method employing an electron ray beam, in which the electron ray beam is illuminated on an electron ray sensitive resist material for delineating a pattern on the resist material. The method consists in dividing the pattern for delineation into pre-set unitary domains, and correcting the exposure light volume of an electron ray beam illuminated on each unitary domain in consideration of the accumulated energy ascribable to backward scattering of electrons. The proximity effect correction method includes the steps of bit-map-developing each unitary domain and calculating a pattern areal density in each unitary domain, averaging the pattern areal density in each unitary domain for calculating the averaged pattern area density, calculating the gradient vector of the averaged pattern areal density, and extracting a unitary domain where the magnitude of the calculated gradient vector is more than a pre-set value for identifying the unitary domain exhibiting a high correction error in the proximity effect correction.

    摘要翻译： PCT No.PCT / JP96 / 03893 Sec。 371日期1997年8月27日第 102（e）日期1997年8月27日PCT提交1996年12月27日PCT公布。 公开号WO97 / 24751 日期1997年7月10日在使用电子束的描绘方法中使用的邻近效应校正方法，其中电子束被照射在用于描绘抗蚀剂材料上的图案的电子感光抗蚀剂材料上。 该方法包括将用于描绘的图案划分成预设的单一域，并且考虑到归因于电子的反向散射的累积能量来校正照射在每个单一域上的电子束的曝光光体积。 邻近效应校正方法包括以下步骤：对每个单一域进行位图显影，并计算每个单一域中的图案面密度，对每个单位域中的图案面积密度进行平均，以计算平均图案面积密度，计算梯度向量 平均模式面密度，并且提取其中计算的梯度矢量的大小大于用于识别邻近效应校正中呈现高校正误差的单一域的预设值的单一域。

    Solid-state imaging device and method for manufacturing solid-state imaging device
    10.
    发明申请
    Solid-state imaging device and method for manufacturing solid-state imaging device 有权
    固态成像装置及制造固态成像装置的方法

    公开(公告)号：US20060125036A1

    公开(公告)日：2006-06-15

    申请号：US11343496

    申请日：2006-01-31

    申请人： Takashi Kasuga

    发明人： Takashi Kasuga

    IPC分类号： H01L31/0232

    CPC分类号： H01L27/14843 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14687 ,  H01L27/14806 ,  H01L27/14812

    摘要： A plurality of optical sensors (4) are arranged in a surface region of a semiconductor substrate (6) in a matrix pattern, and electric charge generated by the optical sensors (4) is transferred by first and second transfer electrodes (12 and 14) embedded under the optical sensors (4). The semiconductor substrate (6) is constructed by laminating a support substrate (16) composed of silicon, a buffer layer (18), and a thin silicon layer (20) composed of single-crystal silicon. p− regions (26) (overflow barrier) and n-type regions (28) which function as transfer paths are formed under the optical sensors (4). The first and the second transfer electrodes (12 and 14) are disposed between the buffer layer (18) and the n-type regions (28), and an insulating film (30) is interposed between the n-type regions (28) and the first and the second transfer electrodes (12 and 14). In this structure, the light-receiving area is large since the transfer electrodes are not disposed in the front region. Accordingly, the sensitivity can be ensured even when the size of the optical sensors (4) is reduced for increasing the number of pixels.

    摘要翻译： 多个光学传感器（4）以矩阵图形布置在半导体衬底（6）的表面区域中，由光学传感器（4）产生的电荷由第一和第二传输电极（12和14）传送， 嵌入在光学传感器（4）下面。 半导体衬底（6）通过层叠由硅组成的支撑衬底（16），缓冲层（18）和由单晶硅构成的薄硅层（20）构成。 在光学传感器（4）下形成有用作传输路径的p-区（26）（溢流栅）和n型区（28）。 第一和第二转移电极（12和14）设置在缓冲层（18）和n型区域（28）之间，并且绝缘膜（30）插入在n型区域（28）和 第一和第二转印电极（12和14）。 在这种结构中，由于转印电极未设置在前部区域，所以光接收面积很大。 因此，即使当光学传感器（4）的尺寸减小以增加像素数量时，也可以确保灵敏度。