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    PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA PROCESSING
    1.
    发明申请
    PLASMA PROCESSING APPARATUS AND METHOD FOR PLASMA PROCESSING 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US20110024399A1

    公开(公告)日：2011-02-03

    申请号：US12936671

    申请日：2009-04-06

    申请人： Hyoung Won Kim ,  Young Soo Seo ,  Chi Kug Yoon ,  Jun Hyeok Lee ,  Young Ki Han ,  Jae Chul Choi

    发明人： Hyoung Won Kim ,  Young Soo Seo ,  Chi Kug Yoon ,  Jun Hyeok Lee ,  Young Ki Han ,  Jae Chul Choi

    IPC分类号： B23K10/00

    CPC分类号： H01J37/32568 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67751 ,  H01L21/68742

    摘要： Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.

    摘要翻译： 提供了一种等离子体处理装置和方法。 等离子体处理装置包括室，上电极，下电极，基板支撑件和移动构件。 上电极设置在室的内部上部。 下电极在室的内下部面对上电极以支撑衬底，使得衬底的斜面在衬底级蚀刻工艺中暴露。 衬底支撑件设置在上电极和下电极之间以支撑衬底，使得衬底的底表面的中心区域在衬底背面蚀刻工艺中暴露。 移动构件被构造成移动衬底支撑件以在衬底背面蚀刻工艺中将衬底与衬底支撑件分离。

    APPARATUS AND METHOD FOR PROCESSING SUBSTRATE
    2.
    发明申请
    APPARATUS AND METHOD FOR PROCESSING SUBSTRATE 有权
    装置和处理基板的方法

    公开(公告)号：US20100288728A1

    公开(公告)日：2010-11-18

    申请号：US12810915

    申请日：2008-12-10

    申请人： Young Ki Han ,  Young Soo Seo

    发明人： Young Ki Han ,  Young Soo Seo

    IPC分类号： C23F1/02 ,  C23F1/12 ,  C23F1/08 ,  C23C16/00 ,  C23C16/50 ,  B08B6/00

    CPC分类号： H01J37/20 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/2002 ,  H01J2237/20235

    摘要： There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.

    摘要翻译： 提供了一种用于处理基板的装置和方法。 通过使用该装置和方法，可以在单个室中对基板的边缘区域和后部区域各自进行等离子体处理。 该装置包括提供反应空间的室; 安装在室内的舞台; 等离子体屏蔽单元，其安装在所述室中与所述台相对; 支撑单元，用于在所述载物台和所述等离子体屏蔽单元之间支撑基板; 设置在所述阶段以将反应或非反应气体供应到所述基板的一个表面的第一供给管; 以及设置在所述等离子体屏蔽单元处的第二和第三供应管，所述第二供应管向所述基板的另一表面供应反应气体，所述第三供应管向另一表面供应非反应气体。

    Apparatus and method for processing substrate
    3.
    发明授权
    Apparatus and method for processing substrate 有权
    基板处理装置及方法

    公开(公告)号：US08864936B2

    公开(公告)日：2014-10-21

    申请号：US12810915

    申请日：2008-12-10

    申请人： Young Ki Han ,  Young Soo Seo

    发明人： Young Ki Han ,  Young Soo Seo

    IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  H01J37/20 ,  H01J37/32

    CPC分类号： H01J37/20 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/2002 ,  H01J2237/20235

    摘要： There are provided an apparatus and method for processing a substrate. By using the apparatus and method, plasma processing can be individually performed on each of edge and rear regions of a substrate in a single chamber. The apparatus includes a chamber providing a reaction space; a stage installed in the chamber; a plasma shielding unit installed opposite to the stage in the chamber; a support unit for supporting a substrate between the stage and the plasma shielding unit; a first supply pipe provided at the stage to supply a reaction or non-reaction gas to one surface of the substrate; and second and third supply pipes provided at the plasma shielding unit, the second supply pipe supplying a reaction gas to the other surface of the substrate, the third supply pipe supplying a non-reaction gas to the other surface.

    摘要翻译： 提供了一种用于处理基板的装置和方法。 通过使用该装置和方法，可以在单个室中对基板的边缘区域和后部区域各自进行等离子体处理。 该装置包括提供反应空间的室; 安装在室内的舞台; 等离子体屏蔽单元，其安装在所述室中与所述台相对; 支撑单元，用于在所述载物台和所述等离子体屏蔽单元之间支撑基板; 设置在所述阶段以将反应或非反应气体供应到所述基板的一个表面的第一供给管; 以及设置在所述等离子体屏蔽单元处的第二和第三供应管，所述第二供应管向所述基板的另一表面供应反应气体，所述第三供应管向另一表面供应非反应气体。

    Plasma processing apparatus and method for plasma processing
    4.
    发明授权
    Plasma processing apparatus and method for plasma processing 有权
    等离子体处理装置和等离子体处理方法

    公开(公告)号：US08373086B2

    公开(公告)日：2013-02-12

    申请号：US12936671

    申请日：2009-04-06

    申请人： Hyoung Won Kim ,  Young Soo Seo ,  Chi Kug Yoon ,  Jun Hyeok Lee ,  Young Ki Han ,  Jae Chul Choi

    发明人： Hyoung Won Kim ,  Young Soo Seo ,  Chi Kug Yoon ,  Jun Hyeok Lee ,  Young Ki Han ,  Jae Chul Choi

    IPC分类号： B23K10/00

    CPC分类号： H01J37/32568 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/67069 ,  H01L21/67751 ,  H01L21/68742

    摘要： Provided are a plasma processing apparatus and method. The plasma processing apparatus includes a chamber, an upper electrode, a lower electrode, a substrate support, and a movement member. The upper electrode is disposed at an inner upper portion of the chamber. The lower electrode faces the upper electrode at an inner lower portion of the chamber to support a substrate such that a bevel of the substrate is exposed in a substrate level etching process. The substrate support is disposed between the upper electrode and the lower electrode to support the substrate such that a central region of a bottom surface of the substrate is exposed in a substrate backside etching process. The movement member is configured to move the substrate support to separate the substrate from the substrate support in the substrate backside etching process.

    摘要翻译： 提供了一种等离子体处理装置和方法。 等离子体处理装置包括室，上电极，下电极，基板支撑件和移动构件。 上电极设置在室的内部上部。 下电极在室的内下部面对上电极以支撑衬底，使得衬底的斜面在衬底级蚀刻工艺中暴露。 衬底支撑件设置在上电极和下电极之间以支撑衬底，使得衬底的底表面的中心区域在衬底背面蚀刻工艺中暴露。 移动构件被构造成移动衬底支撑件以在衬底背面蚀刻工艺中将衬底与衬底支撑件分离。

    Method of forming ruthenium thin film using plasma enhanced process
    6.
    发明授权
    Method of forming ruthenium thin film using plasma enhanced process 有权
    使用等离子体增强工艺形成钌薄膜的方法

    公开(公告)号：US06734100B2

    公开(公告)日：2004-05-11

    申请号：US10326769

    申请日：2002-12-20

    申请人： Kyung Woong Park ,  Jung Hwan Choi ,  Young Ki Han

    发明人： Kyung Woong Park ,  Jung Hwan Choi ,  Young Ki Han

    IPC分类号： H01L2144

    CPC分类号： H01L21/28556

    摘要： A conventional method of forming a ruthenium thin film has a problem that conditions for improving a surface morphology are contrary to those for improving a step coverage, with respect to an oxygen fraction, a pressure, a temperature, etc. Accordingly, it is difficult to obtain a thin film having the improved properties in both the surface morphology and the step coverage. This invention provides three methods for improving both the surface morphology and the step coverage. As one method of forming the ruthenium thin film, a ruthenium seed layer is first formed using a PECVD process and then a ruthenium thin film is deposited using a thermal CVD process. As another method, a first ruthenium thin film is deposited using a thermal CVD process and then a second ruthenium thin film is formed on the first ruthenium thin film using a PECVD process. As further another method, a ruthenium thin film is deposited using a thermal CVD process and then a surface of the ruthenium thin film is processed using an oxygen containing plasma. According to these methods, both the surface morphology and the step coverage can be improved.

    摘要翻译： 形成钌薄膜的常规方法具有与氧分数，压力，温度等相关的用于提高表面形态的条件与用于提高阶梯覆盖的条件相反的问题。因此，难以 获得具有改善的表面形貌和台阶覆盖性能的薄膜。 本发明提供三种改善表面形态和台阶覆盖的方法。 作为形成钌薄膜的一种方法，首先使用PECVD工艺形成钌籽晶层，然后使用热CVD法沉积钌薄膜。 作为另一种方法，使用热CVD工艺沉积第一钌薄膜，然后使用PECVD工艺在第一钌薄膜上形成第二钌薄膜。 作为另一种方法，使用热CVD法沉积钌薄膜，然后使用含氧等离子体处理钌薄膜的表面。 根据这些方法，可以改善表面形态和台阶覆盖。