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89 条记录 (耗时 0.033 秒)

    Composition for preventing or treating inflammation
    1.
    发明授权
    Composition for preventing or treating inflammation 有权
    用于预防或治疗炎症的组合物

    公开(公告)号：US08575089B2

    公开(公告)日：2013-11-05

    申请号：US13390888

    申请日：2010-08-17

    申请人： Young Sook Son ,  Hyun Sook Hong ,  Do Yeon Kim ,  Eun Kyung Lee

    发明人： Young Sook Son ,  Hyun Sook Hong ,  Do Yeon Kim ,  Eun Kyung Lee

    IPC分类号： A61K38/00 ,  A61P5/00

    CPC分类号： A61K38/08

    摘要： The present invention relates to a composition containing Substance P for preventing or treating an inflammation. The composition containing Substance P according to the present invention exhibits the effect of decreasing leukocytes, neutrophils and hematopoietic stem cells in a blood, which are associated with the inflammation, and of increasing anti-inflammatory cytokines, regulatory T-lymphocytes, anti-inflammatory macrophages and the like, thereby terminating inflammatory response at an early stage, and is thus highly effective in preventing and treating the inflammation caused by a non-traumatic, traumatic, infectious or ischemic retinal injury.

    摘要翻译： 本发明涉及含有用于预防或治疗炎症的物质P的组合物。 含有根据本发明的物质P的组合物具有降低血液中与炎症相关的白细胞，嗜中性粒细胞和造血干细胞以及增加抗炎细胞因子，调节性T淋巴细胞，抗炎巨噬细胞的作用 从而在早期终止炎症反应，因此在预防和治疗由非创伤性，创伤性，感染性或缺血性视网膜损伤引起的炎症方面非常有效。

    Organic polymer semiconductor, method of preparing the same, and ambipolar organic thin film transistor using the same
    7.
    发明授权
    Organic polymer semiconductor, method of preparing the same, and ambipolar organic thin film transistor using the same 有权
    有机聚合物半导体，其制备方法和使用其的双极性有机薄膜晶体管

    公开(公告)号：US08354666B2

    公开(公告)日：2013-01-15

    申请号：US11790755

    申请日：2007-04-27

    申请人： Bang Lin Lee ,  Eun Kyung Lee ,  Kook Min Han

    发明人： Bang Lin Lee ,  Eun Kyung Lee ,  Kook Min Han

    IPC分类号： H01L51/00

    CPC分类号： H01L51/0036 ,  C08G61/122 ,  C08G61/124 ,  C08G61/125 ,  C08G61/126 ,  C09K11/06 ,  C09K2211/1458 ,  C09K2211/1466 ,  H01L51/0545 ,  H05B33/14

    摘要： Disclosed are an organic polymer semiconductor, an ambipolar organic thin film transistor using the same, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same. Example embodiments relate to an organic polymer semiconductor, which may include an aromatic ring derivative having p-type semiconductor properties and a heteroaromatic ring having n-type semiconductor properties in the main chain thereof, and which thus may exhibit both p-type transistor properties and n-type transistor properties when used in the organic active layer of an electronic device, e.g., an organic thin film transistor, an ambipolar organic thin film transistor using such an organic polymer semiconductor, an electronic device comprising the ambipolar organic thin film transistor and methods of fabricating the same.

    摘要翻译： 公开了有机聚合物半导体，使用该有机聚合物半导体的双极性有机薄膜晶体管，包含双极性有机薄膜晶体管的电子器件及其制造方法。 示例性实施方案涉及有机聚合物半导体，其可以包括具有p型半导体性质的芳族环衍生物和在其主链中具有n型半导体性质的杂芳族环，因此可以表现出p型晶体管性质和 当用于电子器件的有机活性层（例如有机薄膜晶体管，使用这种有机聚合物半导体的双极性有机薄膜晶体管），包括双极性有机薄膜晶体管的电子器件和方法 的制造。

    Quantum dot electroluminescent device and method for fabricating the same
    9.
    发明授权
    Quantum dot electroluminescent device and method for fabricating the same 有权
    量子点电致发光器件及其制造方法

    公开(公告)号：US08120010B2

    公开(公告)日：2012-02-21

    申请号：US12534226

    申请日：2009-08-03

    申请人： Kyung Sang Cho ,  Byoung Lyong Choi ,  Eun Kyung Lee

    发明人： Kyung Sang Cho ,  Byoung Lyong Choi ,  Eun Kyung Lee

    IPC分类号： H01L29/06 ,  H01L31/00

    CPC分类号： H05B33/14 ,  C09K11/025 ,  C09K11/565 ,  C09K11/883 ,  H01L51/0037 ,  H01L51/0039 ,  H01L51/502 ,  H01L51/5048

    摘要： A quantum dot electroluminescent device that includes a substrate, a quantum dot light-emitting layer disposed on the substrate, a first electrode which injects charge carriers into the quantum dot light-emitting layer, a second electrode which injects charge carriers, which have an opposite charge than the charge carriers injected by the first electrode, into the quantum dot light-emitting layer, a hole transport layer disposed between the first electrode and the quantum dot light-emitting layer, and an electron transport layer disposed between the second electrode and the quantum dot light-emitting layer, wherein the quantum dot light-emitting layer has a first surface in contact with the hole transport layer and a second surface in contact with an electron transport layer, and wherein the first surface has an organic ligand distribution that is different from an organic ligand distribution of the second surface.

    摘要翻译： 一种量子点电致发光器件，包括衬底，设置在衬底上的量子点发光层，将电荷载流子注入量子点发光层的第一电极，注入电荷载流子的第二电极，其具有相反的 电荷比由第一电极注入的电荷载流子进入量子点发光层，设置在第一电极和量子点发光层之间的空穴传输层和设置在第二电极和量子点发光层之间的电子传输层 量子点发光层，其中量子点发光层具有与空穴传输层接触的第一表面和与电子传输层接触的第二表面，并且其中第一表面具有有机配体分布 不同于第二表面的有机配体分布。

    Light-emitting device and light-receiving device using transistor structure
    10.
    发明授权
    Light-emitting device and light-receiving device using transistor structure 有权
    使用晶体管结构的发光器件和光接收器件

    公开(公告)号：US07863628B2

    公开(公告)日：2011-01-04

    申请号：US12031287

    申请日：2008-02-14

    申请人： Byoung Lyong Choi ,  Kyung Sang Cho ,  Eun Kyung Lee ,  O Gweon Seo

    发明人： Byoung Lyong Choi ,  Kyung Sang Cho ,  Eun Kyung Lee ,  O Gweon Seo

    IPC分类号： H01L27/15

    CPC分类号： H01L51/5296 ,  B82Y20/00 ,  H01L51/0545 ,  H01L51/5012 ,  H01L51/5203

    摘要： Disclosed is a light-emitting device using a transistor structure, including a substrate, a first gate electrode, a first insulating layer, a source electrode, a drain electrode, and a light-emitting layer formed between the source electrode and the drain electrode in a direction parallel to these electrodes. In the light-emitting device using the transistor structure, it is possible to adjust the mobility of electrons or holes and to selectively set a light-emitting region through the control of the magnitude of voltage applied to the gate electrode, thus increasing the lifespan of the light-emitting device, facilitating the manufacturing process thereof, and realizing light-emitting or light-receiving properties having high efficiency and high purity.

    摘要翻译： 公开了一种使用晶体管结构的发光装置，其包括基板，第一栅电极，第一绝缘层，源电极，漏电极和形成在源电极和漏电极之间的发光层， 与这些电极平行的方向。 在使用晶体管结构的发光装置中，可以通过控制施加到栅电极的电压的大小来调节电子或空穴的迁移率并选择性地设置发光区域，从而增加寿命 发光装置，便于其制造工艺，并实现高效率和高纯度的发光或光接收性能。