公开(公告)号：US20070145384A1

公开(公告)日：2007-06-28

申请号：US11682276

申请日：2007-03-05

申请人： Nathan Gardner ,  Gangyi Chen ,  Werner Goetz ,  Michael Krames ,  Gerd Mueller ,  Yu-Chen Shen ,  Satoshi Watanabe

发明人： Nathan Gardner ,  Gangyi Chen ,  Werner Goetz ,  Michael Krames ,  Gerd Mueller ,  Yu-Chen Shen ,  Satoshi Watanabe

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/025 ,  H01L33/06 ,  H01L33/325

摘要： In a device, a III-nitride light emitting layer is disposed between an n-type region and a p-type region. A first spacer layer, which is disposed between the n-type region and the light emitting layer, is doped to a dopant concentration between 6×1018 cm3 and 5×1019 cm−3. A second spacer layer, which is disposed between the p-type region and the light emitting layer, is not intentionally doped or doped to a dopant concentration less than 6×1018 cm−3.

摘要翻译： 在器件中，III族氮化物发光层设置在n型区域和p型区域之间。 设置在n型区域和发光层之间的第一间隔层被掺杂到掺杂剂浓度为6×10 18 cm -3和5×10 6 19厘米-3 -3。 设置在p型区域和发光层之间的第二间隔层不是有意地掺杂或掺杂到掺杂剂浓度小于6×10 -3 -3 -3倍 >。

公开(公告)号：US20070045638A1

公开(公告)日：2007-03-01

申请号：US11211921

申请日：2005-08-24

申请人： Yu-Chen Shen ,  Nathan Gardner ,  Satoshi Watanabe ,  Michael Krames ,  Gerd Mueller

发明人： Yu-Chen Shen ,  Nathan Gardner ,  Satoshi Watanabe ,  Michael Krames ,  Gerd Mueller

IPC分类号： H01L33/00

摘要： A III-nitride light emitting layer is disposed between an n-type region and a p-type region. The light emitting layer is a doped thick layer. In some embodiments, the light emitting layer is sandwiched between two doped spacer layers.

摘要翻译： III族氮化物发光层设置在n型区域和p型区域之间。 发光层是掺杂的厚层。 在一些实施例中，发光层夹在两个掺杂间隔层之间。

公开(公告)号：US20060197100A1

公开(公告)日：2006-09-07

申请号：US11226185

申请日：2005-09-13

申请人： Yu-Chen Shen ,  Michael Krames ,  Nathan Gardner

发明人： Yu-Chen Shen ,  Michael Krames ,  Nathan Gardner

IPC分类号： H01L33/00 ,  H01L29/22

CPC分类号： H01L33/32 ,  H01L33/16

摘要： A semiconductor light emitting device includes a light emitting layer disposed between an n-type region and a p-type region. The light emitting layer may be a wurtzite III-nitride layer with a thickness of at least 50 angstroms. The light emitting layer may have a polarization reversed from a conventional wurtzite III-nitride layer, such that across an interface between the light emitting layer and the p-type region, the wurtzite c-axis points toward the light emitting layer. Such an orientation of the c-axis may create a negative sheet charge at an interface within or at the edge of the p-type region, providing a barrier to charge carriers in the light emitting layer.

摘要翻译： 半导体发光器件包括设置在n型区域和p型区域之间的发光层。 发光层可以是厚度至少为50埃的纤锌矿III族氮化物层。 发光层可以具有与常规的纤锌矿III族氮化物层相反的偏振，使得在发光层和p型区域之间的界面上，纤锌矿c轴指向发光层​​。 c轴的这种取向可以在p型区域的边缘内或边缘处的界面处产生负片材电荷，为发光层中的载流子提供阻挡。

公开(公告)号：US20060091404A1

公开(公告)日：2006-05-04

申请号：US10977867

申请日：2004-10-29

申请人： Yu-Chen Shen ,  Michael Krames ,  Nathan Gardner

发明人： Yu-Chen Shen ,  Michael Krames ,  Nathan Gardner

IPC分类号： H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/32 ,  B82Y20/00 ,  H01L33/06 ,  H01S5/3205 ,  H01S5/34333

摘要： A III-nitride light emitting layer in a semiconductor light emitting device has a graded composition. The composition of the light emitting layer may be graded such that the change in the composition of a first element is at least 0.2% per angstrom of light emitting layer. Grading in the light emitting layer may reduce problems associated with polarization fields in the light emitting layer. The light emitting layer may be, for example InxGa1-xN, AlxGa1-xN, or InxAlyGa1-x-yN.

摘要翻译： 半导体发光器件中的III族氮化物发光层具有渐变组成。 发光层的组成可以分级，使得第一元素的组成的变化为每发光层的至少0.2％。 在发光层中的分级可以减少与发光层中的极化场相关的问题。 发光层可以是例如在N 1 Ga 1-x N，Al x Ga 1-x N 2 > N，或在<！ - SIPO - >中。

公开(公告)号：US20050023549A1

公开(公告)日：2005-02-03

申请号：US10633058

申请日：2003-08-01

申请人： Nathan Gardner ,  Jonathan Wierer ,  Gerd Mueller ,  Michael Krames

发明人： Nathan Gardner ,  Jonathan Wierer ,  Gerd Mueller ,  Michael Krames

IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L33/22 ,  H01L33/40

CPC分类号： H01L33/405 ,  H01L33/0004 ,  H01L33/22

摘要： A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.

摘要翻译： III族氮化物器件包括第一n型层，第一p型层和分离第一p型层和第一n型层的有源区。 该装置可以包括第二n型层和分隔第一和第二n型层的隧道结。 第一和第二触点电连接到第一和第二n型层。 第一和第二触点由相同的材料形成，对有源区域发射的光的反射率大于75％的材料形成。 该器件可以包括布置在第二n型层和第二接触之间的纹理化层，或者形成在与器件层相对的生长衬底的表面上。

公开(公告)号：US20070131961A1

公开(公告)日：2007-06-14

申请号：US11672003

申请日：2007-02-06

申请人： Michael Krames ,  Nathan Gardner ,  Frank Steranka

发明人： Michael Krames ,  Nathan Gardner ,  Frank Steranka

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/30 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.

摘要翻译： 为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。 在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。 在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。 在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。 然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。 然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。

公开(公告)号：US20070069225A1

公开(公告)日：2007-03-29

申请号：US11237215

申请日：2005-09-27

申请人： Michael Krames ,  Nathan Gardner ,  John Epler

发明人： Michael Krames ,  Nathan Gardner ,  John Epler

IPC分类号： H01L33/00 ,  H01L29/22

CPC分类号： H01L21/2654 ,  H01L21/76254 ,  H01L33/0075 ,  H01L33/0079 ,  H01S5/32341 ,  H01S2304/12

摘要： A semiconductor structure includes an n-type region, a p-type region, and a III-nitride light emitting layer disposed between the n-type region and the p-type region. The III-nitride light emitting layer has a lattice constant greater than 3.19 Å. Such a semiconductor structure may be grown on a substrate including a host and a seed layer bonded to the host. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

摘要翻译： 半导体结构包括设置在n型区域和p型区域之间的n型区域，p型区域和III族氮化物发光层。 III族氮化物发光层的晶格常数大于3.19埃。 这样的半导体结构可以在包含与主体结合的主体和种子层的基板上生长。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

公开(公告)号：US20060284187A1

公开(公告)日：2006-12-21

申请号：US11156105

申请日：2005-06-17

申请人： Jonathan Wierer ,  Michael Krames ,  Nathan Gardner

发明人： Jonathan Wierer ,  Michael Krames ,  Nathan Gardner

IPC分类号： H01L27/15

CPC分类号： C30B29/60 ,  B82Y20/00 ,  G02B6/1225 ,  H01L33/08 ,  H01L33/18 ,  H01L33/24 ,  H01L2933/0083 ,  H01S5/105 ,  H01S5/34333

摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.

公开(公告)号：US20060220031A1

公开(公告)日：2006-10-05

申请号：US11100080

申请日：2005-04-05

申请人： Michael Krames ,  Nathan Gardner ,  Frank Steranka

发明人： Michael Krames ,  Nathan Gardner ,  Frank Steranka

IPC分类号： H01L33/00

CPC分类号： H01L33/30 ,  H01L2224/13 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2224/0401

摘要： To increase the lattice constant of AlInGaP LED layers to greater than the lattice constant of GaAs for reduced temperature sensitivity, an engineered growth layer is formed over a substrate, where the growth layer has a lattice constant equal to or approximately equal to that of the desired AlInGaP layers. In one embodiment, a graded InGaAs or InGaP layer is grown over a GaAs substrate. The amount of indium is increased during growth of the layer such that the final lattice constant is equal to that of the desired AlInGaP active layer. In another embodiment, a very thin InGaP, InGaAs, or AlInGaP layer is grown on a GaAs substrate, where the InGaP, InGaAs, or AlInGaP layer is strained (compressed). The InGaP, InGaAs, or AlInGaP thin layer is then delaminated from the GaAs and relaxed, causing the lattice constant of the thin layer to increase to the lattice constant of the desired overlying AlInGaP LED layers. The LED layers are then grown over the thin InGaP, InGaAs, or AlInGaP layer.

摘要翻译： 为了将AlInGaP LED层的晶格常数提高到大于GaAs的晶格常数以降低温度敏感性，在衬底上形成工程化生长层，其中生长层具有等于或近似等于所需的晶格常数的晶格常数 AlInGaP层。 在一个实施例中，在GaAs衬底上生长渐变的InGaAs或InGaP层。 在层的生长期间铟的量增加，使得最终晶格常数等于所需的AlInGaP活性层的量。 在另一实施例中，在GaAs衬底上生长非常薄的InGaP，InGaAs或AlInGaP层，其中InGaP，InGaAs或AlInGaP层被应变（压缩）。 然后，InGaP，InGaAs或AlInGaP薄层从GaAs分层并且弛豫，导致薄层的晶格常数增加到期望的上覆AlInGaP LED层的晶格常数。 然后在薄的InGaP，InGaAs或AlInGaP层上生长LED层。

公开(公告)号：US20050205884A1

公开(公告)日：2005-09-22

申请号：US10805424

申请日：2004-03-19

申请人： Jarnes Kim ,  John Epler ,  Nathan Gardner ,  Michael Krames ,  Jonathan Wierer

发明人： Jarnes Kim ,  John Epler ,  Nathan Gardner ,  Michael Krames ,  Jonathan Wierer

IPC分类号： G02B5/30 ,  H01L33/10 ,  H01L33/18 ,  H01L33/32 ,  H01L33/40 ,  H01L33/46 ,  H01S5/183 ,  H01S5/323 ,  H01L33/00

CPC分类号： H01L33/18 ,  H01L25/0756 ,  H01L33/105 ,  H01L33/32 ,  H01L33/405 ,  H01L33/46 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11{overscore (2)}0} or {10{overscore (1)}0} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.

摘要翻译： 半导体发光器件包括发射线偏振光的面内有源区域。 面内有源区可以包括例如{11 {过滤（20）或{10 {超（10）InGaN发光层）。在一些实施例中，定向为使通过大部分 在一些实施例中，发射相同或不同着色光的两个有源区域被定向成通过底部有源区域发射的大部分光的偏振光的偏振器隔开，以及 以反射由顶部有源区域发射的大部分光的偏振光。在一些实施例中，偏振器反射由波长转换层散射的光。