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    Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal
    3.
    发明申请
    Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal 审中-公开
    通过生长衬底去除制造的谐振腔III族氮化物发光器件

    公开(公告)号：US20060014310A1

    公开(公告)日：2006-01-19

    申请号：US11227416

    申请日：2005-09-14

    申请人： John Epler ,  Michael Krames ,  Jonathan Wierer

    发明人： John Epler ,  Michael Krames ,  Jonathan Wierer

    IPC分类号： H01L21/00

    CPC分类号： H01L33/465 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/22

    摘要： A semiconductor light emitting device includes an n-type region, a p-type region, and light emitting region disposed between the n- and p-type regions. The n-type, p-type, and light emitting regions form a cavity having a top surface and a bottom surface. Both the top surface and the bottom surface of the cavity may have a rough surface. For example, the surface may have a plurality of peaks separated by a plurality of valleys. In some embodiments, the thickness of the cavity is kept constant by incorporating an etch-stop layer into the device, then thinning the layers of the device by a process that terminates on the etch-stop layer.

    摘要翻译： 半导体发光器件包括n型区域，p型区域和设置在n型区域和p型区域之间的发光区域。 n型，p型和发光区形成具有顶表面和底表面的空腔。 空腔的顶表面和底表面都可以具有粗糙的表面。 例如，表面可以具有由多个谷分隔的多个峰。 在一些实施例中，通过将蚀刻停止层并入该器件中，使空腔的厚度保持恒定，然后通过终止于蚀刻停止层上的工艺使器件的层变薄。

    Photonic crystal light emitting device
    4.
    发明申请
    Photonic crystal light emitting device 有权
    光子晶体发光装置

    公开(公告)号：US20060163606A1

    公开(公告)日：2006-07-27

    申请号：US11373636

    申请日：2006-03-09

    申请人： Jonathan Wierer ,  Michael Krames ,  John Epler

    发明人： Jonathan Wierer ,  Michael Krames ,  John Epler

    IPC分类号： H01L33/00

    CPC分类号： H01L33/0079 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

    摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.

    摘要翻译： 在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。 在与有源区相对的p型区域的表面上形成反射体。 在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成 在光子晶体下面的p型区域的表面上的反射器。 光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。

    Photonic crystal light emitting device
    5.
    发明申请
    Photonic crystal light emitting device 审中-公开
    光子晶体发光装置

    公开(公告)号：US20050205883A1

    公开(公告)日：2005-09-22

    申请号：US10804810

    申请日：2004-03-19

    申请人： Jonathan Wierer ,  Michael Krames ,  John Epler

    发明人： Jonathan Wierer ,  Michael Krames ,  John Epler

    IPC分类号： H01L33/00 ,  H01L33/10 ,  H01L33/20 ,  H01L33/38 ,  H01L33/62

    CPC分类号： H01L33/0079 ,  H01L33/10 ,  H01L33/22 ,  H01L33/382 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0083 ,  H01L2924/00

    摘要： A photonic crystal structure is formed in an n-type region of a III-nitride semiconductor structure including an active region sandwiched between an n-type region and a p-type region. A reflector is formed on a surface of the p-type region opposite the active region. In some embodiments, the growth substrate on which the n-type region, active region, and p-type region are grown is removed, in order to facilitate forming the photonic crystal in an an-type region of the device, and to facilitate forming the reflector on a surface of the p-type region underlying the photonic crystal. The photonic crystal and reflector form a resonant cavity, which may allow control of light emitted by the active region.

    摘要翻译： 在包括夹在n型区域和p型区域之间的有源区域的III族氮化物半导体结构的n型区域中形成光子晶体结构。 在与有源区相对的p型区域的表面上形成反射体。 在一些实施例中，除去其上生长n型区域，活性区域和p型区域的生长衬底，以便于在器件的类型区域中形成光子晶体，并且有利于形成 在光子晶体下面的p型区域的表面上的反射器。 光子晶体和反射器形成谐振腔，其可以允许控制由有源区发射的光。

    SEMICONDUCTOR LIGHT EMITTING DEVICES
    7.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICES 有权
    半导体发光器件

    公开(公告)号：US20050023549A1

    公开(公告)日：2005-02-03

    申请号：US10633058

    申请日：2003-08-01

    申请人： Nathan Gardner ,  Jonathan Wierer ,  Gerd Mueller ,  Michael Krames

    发明人： Nathan Gardner ,  Jonathan Wierer ,  Gerd Mueller ,  Michael Krames

    IPC分类号： H01L27/15 ,  H01L33/00 ,  H01L33/22 ,  H01L33/40

    CPC分类号： H01L33/405 ,  H01L33/0004 ,  H01L33/22

    摘要： A III-nitride device includes a first n-type layer, a first p-type layer, and an active region separating the first p-type layer and the first n-type layer. The device may include a second n-type layer and a tunnel junction separating the first and second n-type layers. First and second contacts are electrically connected to the first and second n-type layers. The first and second contacts are formed from the same material, a material with a reflectivity to light emitted by the active region greater than 75%. The device may include a textured layer disposed between the second n-type layer and the second contact or formed on a surface of a growth substrate opposite the device layers.

    摘要翻译： III族氮化物器件包括第一n型层，第一p型层和分离第一p型层和第一n型层的有源区。 该装置可以包括第二n型层和分隔第一和第二n型层的隧道结。 第一和第二触点电连接到第一和第二n型层。 第一和第二触点由相同的材料形成，对有源区域发射的光的反射率大于75％的材料形成。 该器件可以包括布置在第二n型层和第二接触之间的纹理化层，或者形成在与器件层相对的生长衬底的表面上。

    III-V light emitting device
    8.
    发明申请
    III-V light emitting device 审中-公开
    III-V发光装置

    公开(公告)号：US20070069225A1

    公开(公告)日：2007-03-29

    申请号：US11237215

    申请日：2005-09-27

    申请人： Michael Krames ,  Nathan Gardner ,  John Epler

    发明人： Michael Krames ,  Nathan Gardner ,  John Epler

    IPC分类号： H01L33/00 ,  H01L29/22

    CPC分类号： H01L21/2654 ,  H01L21/76254 ,  H01L33/0075 ,  H01L33/0079 ,  H01S5/32341 ,  H01S2304/12

    摘要： A semiconductor structure includes an n-type region, a p-type region, and a III-nitride light emitting layer disposed between the n-type region and the p-type region. The III-nitride light emitting layer has a lattice constant greater than 3.19 Å. Such a semiconductor structure may be grown on a substrate including a host and a seed layer bonded to the host. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

    摘要翻译： 半导体结构包括设置在n型区域和p型区域之间的n型区域，p型区域和III族氮化物发光层。 III族氮化物发光层的晶格常数大于3.19埃。 这样的半导体结构可以在包含与主体结合的主体和种子层的基板上生长。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。

    Substrate for growing a III-V light emitting device
    9.
    发明申请
    Substrate for growing a III-V light emitting device 有权
    用于生长III-V发光器件的衬底

    公开(公告)号：US20070072324A1

    公开(公告)日：2007-03-29

    申请号：US11237164

    申请日：2005-09-27

    申请人： Michael Krames ,  Nathan Gardner ,  John Epler

    发明人： Michael Krames ,  Nathan Gardner ,  John Epler

    IPC分类号： H01L21/00 ,  H01G9/20

    CPC分类号： H01L21/76256 ,  C30B25/183 ,  C30B29/40 ,  C30B29/403 ,  H01L21/76254 ,  H01L33/007 ,  H01L33/0079

    摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.

    摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。