公开(公告)号：US08641202B2

公开(公告)日：2014-02-04

申请号：US12551833

申请日：2009-09-01

申请人： Hisashi Okada ,  Kazuya Minami ,  Yosuke Nishihata ,  Yuji Matsuyama

发明人： Hisashi Okada ,  Kazuya Minami ,  Yosuke Nishihata ,  Yuji Matsuyama

IPC分类号： G03B21/18 ,  G03B21/16 ,  G02F1/1333

CPC分类号： G03B21/26

摘要： A projection display device includes: a light modulator for modulating light from a light source; a polarizer disposed at a position facing the light modulator; a cooling section for allowing an air to flow in a space between the light modulator and the polarizer; and an air deflector for deflecting the air flowing in the space between the light modulator and the polarizer toward the polarizer.

摘要翻译： 投影显示装置包括：调制器，用于调制来自光源的光; 设置在面向所述光调制器的位置处的偏振器; 用于允许空气在所述光调制器和所述偏振器之间的空间中流动的冷却部分; 以及用于使在光调制器和偏振器之间的空间中流动的空气偏向偏振器的空气导流板。

公开(公告)号：US06533864B1

公开(公告)日：2003-03-18

申请号：US09639172

申请日：2000-08-16

申请人： Yuji Matsuyama ,  Shuichi Nagamine

发明人： Yuji Matsuyama ,  Shuichi Nagamine

IPC分类号： B05C1110

CPC分类号： H01L21/6715 ,  B05C11/08

摘要： An upper side of a cup provided around a wafer is formed in a rectangular shape and a lower side thereof is formed in a cylindrical shape. The cup is formed such that, when seen from above, the portion forming the cylindrical shape is positioned within the portion forming the rectangular shape. The cup has a raising and lowering mechanism and is controlled by a control section. The upper side of the cup is placed by the side of the wafer during a scan by a supply nozzle. The lower side of the cup is placed over an upper level and a lower level of the wafer while a rinse liquid and a developing solution are shaken off. The scan by the supply nozzle is performed with the supply nozzle positioned in the upper cup portion.

摘要翻译： 设置在晶片周围的杯的上侧形成为矩形，其下侧形成为圆筒状。 杯形成为从上方观察，形成圆筒形状的部分位于形成矩形形状的部分内。 杯具有升降机构，由控制部控制。 杯子的上侧在扫描期间被供给喷嘴放置在晶片的侧面。 将杯的下侧放置在晶片的上层和下层上，同时冲洗液体和显影液被摇动。 由供给喷嘴进行的扫描由位于上杯部的供给喷嘴进行。

公开(公告)号：US06312171B1

公开(公告)日：2001-11-06

申请号：US09635196

申请日：2000-08-09

申请人： Yuji Matsuyama ,  Masahito Hamada

发明人： Yuji Matsuyama ,  Masahito Hamada

IPC分类号： G03D500

CPC分类号： G03F7/3021

摘要： A current member is disposed above a wafer holding section for holding a wafer and a top plate and a bottom plate of the current member are positioned so that respective air holes are overlapped each other in a vertical direction, and a developing solution is heaped on a front face of the wafer. Thereafter, the developing is performed with the bottom plate of the current member slid in a lateral direction so that the air holes are not overlapped each other in the vertical direction. In this configuration, air streams to the wafer are obstructed during the developing because the air holes in the current member are obstructed in the vertical direction, whereby occurrence of temperature distribution of the developing solution within the plane of the wafer caused by flows of air currents to the wafer is prevented and uniform developing processing can be performed.

摘要翻译： 电流部件设置在用于保持晶片的晶片保持部分上方，并且当前部件的顶板和底板被定位成使得相应的气孔在垂直方向上彼此重叠，并且显影液堆积在 晶片前面。 此后，当前构件的底板沿横向方向滑动，使得气孔在垂直方向上不重叠时进行显影。 在这种构造中，由于当前构件中的空气孔在垂直方向上被阻塞，所以在显影期间阻挡了流到晶片的空气流，从而由于气流的流动而导致显影液在晶片平面内的温度分布的发生 防止了晶片，并且可以进行均匀的显影处理。

公开(公告)号：US07208066B2

公开(公告)日：2007-04-24

申请号：US10649780

申请日：2003-08-28

申请人： Junichi Kitano ,  Yuji Matsuyama ,  Takahiro Kitano ,  Takayuki Katano ,  Hidefumi Matsui ,  Yo Suzuki ,  Masami Yamashita ,  Toru Aoyama ,  Hiroyuki Iwaki ,  Satoru Shimura ,  Masatoshi Deguchi ,  Kousuke Yoshihara ,  Naruaki Iida

发明人： Junichi Kitano ,  Yuji Matsuyama ,  Takahiro Kitano ,  Takayuki Katano ,  Hidefumi Matsui ,  Yo Suzuki ,  Masami Yamashita ,  Toru Aoyama ,  Hiroyuki Iwaki ,  Satoru Shimura ,  Masatoshi Deguchi ,  Kousuke Yoshihara ,  Naruaki Iida

IPC分类号： C23F1/00 ,  H01L21/306 ,  B05C11/00

CPC分类号： H01L21/67178 ,  G03F7/70991 ,  H01L21/67017 ,  H01L21/6715 ,  H01L21/67161 ,  H01L21/67184 ,  H01L21/67742 ,  H01L21/67778 ,  Y10T29/41

摘要： On top of respective areas divided by partition plates, that is, a cassette station, a processing station, and an interface section in a coating and developing processing system, gas supply sections for supplying an inert gas into the respective areas are provided. Exhaust pipes for exhausting atmospheres in the respective areas are provided at the bottom of the respective areas. The atmospheres in the respective areas are maintained in a clean condition by supplying the inert gas not containing impurities such as oxygen and fine particles from the respective gas supply sections into the respective areas and exhausting the atmospheres in the respective areas from the exhaust pipes.

摘要翻译： 在涂覆和显影处理系统中由分隔板，即盒式磁带站，加工站和界面部分划分的各个区域之上，提供用于向各个区域供应惰性气体的气体供应部分。 在各个区域的底部设置用于各区域的排气的排气管。 通过将不含杂质的惰性气体（例如氧气和细颗粒）从各个气体供应区域供应到各个区域中并且从排气管排出各个区域中的气氛，将各个区域中的气氛保持在清洁状态。

公开(公告)号：US07022190B2

公开(公告)日：2006-04-04

申请号：US10146799

申请日：2002-05-17

申请人： Yuji Matsuyama

发明人： Yuji Matsuyama

IPC分类号： B05C11/00

CPC分类号： H01L21/6715 ,  B05C11/08 ,  B05D1/005 ,  B05D3/10

摘要： The present invention is a coating unit for coating a substrate with a coating solution, comprising a coating solution discharge member for discharging the coating solution to the substrate which is positioned in a downward part. A lower surface of the coating solution discharge member is in a shape having a length longer, at least, than the radius of the substrate and having a narrow width. A coating solution discharge port is disposed in a portion of the coating solution discharge member, facing the center of the substrate, while a solvent mist discharge port for discharging a solvent mist of the coating solution is disposed in a portion facing a peripheral portion including an outer edge potion of the substrate, when the coating solution discharge member is positioned above the radius of the substrate.

公开(公告)号：US06969538B2

公开(公告)日：2005-11-29

申请号：US09947474

申请日：2001-09-07

申请人： Masatoshi Deguchi ,  Eiichi Sekimoto ,  Koichi Asaka ,  Yuji Matsuyama

发明人： Masatoshi Deguchi ,  Eiichi Sekimoto ,  Koichi Asaka ,  Yuji Matsuyama

IPC分类号： G03F7/38 ,  B05D3/02 ,  H01L21/00 ,  H01L21/027 ,  H01L21/31

CPC分类号： H01L21/67109 ,  B05D3/0209 ,  B05D3/0254 ,  H01L21/67103

摘要： The present invention relates to a method for heat processing a substrate. After a coating film is formed on the substrate, the substrate is baked at a predetermined high temperature. The baking step is performed by first increasing the substrate temperature from a predetermined low temperature to a predetermined intermediate temperature that is lower than a predetermined reaction temperature at which the coating film reacts. Next, a second baking step maintains the substrate at the predetermined intermediate temperature for a predetermined period of time, and is followed by a third step of increasing the temperature of the substrate to the predetermined high temperature that is higher than the predetermined reaction temperature. This results in uniform temperature within the surface of the substrate when the temperature of the substrate reaches the reaction temperature. Consequently, a chemical reaction due to heat processing of the coating film within the surface of the substrate is performed uniformly.

摘要翻译： 本发明涉及一种热处理基板的方法。 在基板上形成涂膜之后，在预定的高温下烘烤基板。 通过首先将衬底温度从预定的低温升高到低于涂膜反应的预定反应温度的预定中间温度来进行烘烤步骤。 接下来，第二烘烤步骤将基板保持在预定中间温度一段预定的时间，然后是将基板的温度升高到高于预定反应温度的预定高温的第三步骤。 当衬底的温度达到反应温度时，这导致衬底表面内的均匀温度。 因此，均匀地进行由于基板表面内的涂膜的热处理引起的化学反应。

公开(公告)号：US20050048421A1

公开(公告)日：2005-03-03

申请号：US10964695

申请日：2004-10-15

申请人： Junichi Kitano ,  Yuji Matsuyama ,  Takahiro Kitano

发明人： Junichi Kitano ,  Yuji Matsuyama ,  Takahiro Kitano

IPC分类号： G03F7/38 ,  G03F7/16 ,  H01L21/00 ,  H01L21/027 ,  G03C1/76

CPC分类号： H01L21/67253 ,  G03F7/168 ,  H01L21/67028 ,  Y10S414/135

摘要： In a coating and developing treatment for a substrate, the present invention comprises the steps of: supplying a coating solution to the substrate to form a coating layer on the substrate; performing a developing treatment for the substrate in the processing zone after it undergoes an exposure processing by an aligner not included in the system; and carrying the substrate into the chamber after the step of forming the coating layer and before the exposure processing and thereafter reducing the pressure inside the airtightly closed chamber to a predetermined pressure to remove impurities adhering to the substrate inside the chamber from the substrate for a predetermined time, wherein the predetermined pressure and the predetermined time are adjusted based on the density of the impurities measured inside the processing zone. According to the present invention, impurities at a molecule level such as moisture, vapor, oxygen, ozone, and organic substance, and impurities such as fine particles, which adhere to the coating layer of the substrate, can be removed before the exposure processing so that the exposure processing can be performed in a preferable condition. Since the pressure, time, and pressure-reducing speed at the time of reducing the pressure are adjusted based on the density of the impurities measured in a predetermined position, the impurities adhering to the substrate such as moisture and oxygen can be removed under a preferable minimum requirement condition according to the adhering amount of the impurities.

摘要翻译： 在基材的涂布和显影处理中，本发明包括以下步骤：向基材供给涂布溶液以在基材上形成涂层; 在不包括在系统中的对准器进行曝光处理之后，对处理区中的基板进行显影处理; 并且在形成涂层的步骤之后并且在曝光处理之前将衬底运送到室中，然后将气密封闭室内的压力降低到预定压力，以从衬底移除附着在室内的衬底上的杂质，以预定 时间，其中基于在处理区内测量的杂质的密度来调整预定压力和预定时间。 根据本发明，在曝光处理之前可以除去附着在基材的涂层上的分子水平的杂质如水分，蒸汽，氧气，臭氧和有机物质以及粘附到基材的涂层的杂质如细颗粒 可以在优选的条件下进行曝光处理。 由于基于在预定位置测量的杂质的密度来调节压力降低时的压力，时间和减压速度，因此可以在优选的情况下去除附着在基底上的杂质，例如水分和氧气 最低要求条件根据杂质的粘附量。

公开(公告)号：US06672779B2

公开(公告)日：2004-01-06

申请号：US10244755

申请日：2002-09-17

申请人： Issei Ueda ,  Shinichi Hayashi ,  Naruaki Iida ,  Yuji Matsuyama ,  Yoichi Deguchi

发明人： Issei Ueda ,  Shinichi Hayashi ,  Naruaki Iida ,  Yuji Matsuyama ,  Yoichi Deguchi

IPC分类号： G03D500

CPC分类号： H01L21/67161 ,  G07C9/00103 ,  G07C9/00111 ,  G08G3/00 ,  H01L21/67017 ,  H01L21/6715 ,  H01L21/67178 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/67196 ,  H01L21/67201 ,  H01L21/67742 ,  H01L21/67748 ,  H01L21/67754 ,  Y10S134/902 ,  Y10S414/14

摘要： Thermal processing unit sections each with ten tiers and coating processing unit sections each with five tiers are disposed around a first main wafer transfer section and a second main wafer transfer section, and in the thermal processing unit section, the influence of the time required for substrate temperature regulation processing on a drop in throughput can be reduced greatly by transferring the wafer W while the temperature of the wafer W is being regulated by a temperature regulation and transfer device.

摘要翻译： 在第一主晶片传送部和第二主晶片传送部的周围配置具有10层的热处理单元部和各层的涂布处理单元部，并且在热处理单元部中，对基板所需的时间的影响 通过在晶片W的温度由温度调节和转移装置调节的同时转移晶片W可以大大降低生产率下降的温度调节处理。

公开(公告)号：US06402821B1

公开(公告)日：2002-06-11

申请号：US09694981

申请日：2000-10-24

申请人： Yuji Matsuyama

发明人： Yuji Matsuyama

IPC分类号： B01D1900

CPC分类号： B01D19/0031 ,  B01D19/0005

摘要： Nitrogen gas is blown into a developing solution tank, and a developing solution is supplied through a supply nozzle to the surface of a wafer, through a filter unit or the like, with the pressure. The filter unit has a ring-shaped flow path flowing from down upward, an impurity filter provided on the inside thereof, an exhaust passage connected to an uppermost portion of the flow path, and a bubble filter composed of, for example, a hollow fiber membrane, which is provided to block a part of the exhaust passage and has the property of transmitting gas without transmitting liquid. The dissolved nitrogen contained in the developing solution is changed to bubbles by vaporizing in the flow path, and only the bubbles can be removed from the developing solution since the aforesaid bubble filter selectively transmits these bubbles whereby the amount of the developing solution can be saved. Accordingly, it is possible to remove the bubbles contained in a treatment solution while reducing consumption of the treatment solution.

摘要翻译： 将氮气吹入显影液槽中，通过供给喷嘴将显影液通过过滤器单元等与压力一起供给到晶片的表面。 过滤器单元具有从下向上流动的环状流路，设置在其内部的杂质过滤器，连接到流路的最上部的排气通路，以及由例如中空纤维 膜，其被设置成阻挡排气通道的一部分，并且具有在不传输液体的情况下传输气体的性质。 由于上述气泡过滤器选择性地透过这些气泡，所以显影液中含有的溶解的氮气通过在流路中蒸发而变为气泡，并且只能从显影液中除去气泡，由此可以节省显影液的量。 因此，可以减少处理溶液中含有的气泡，同时降低处理溶液的消耗。

公开(公告)号：US06261365B1

公开(公告)日：2001-07-17

申请号：US09272782

申请日：1999-03-19

申请人： Yuji Matsuyama ,  Yoji Mizutani ,  Shinji Nagashima ,  Akira Yonemizu

发明人： Yuji Matsuyama ,  Yoji Mizutani ,  Shinji Nagashima ,  Akira Yonemizu

IPC分类号： B05C502

CPC分类号： H01L21/67748 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/67178

摘要： When a substrate coated with a coating solution which oxidizes at high temperatures is heat-treated, an oxygen concentration of a treatment atmosphere is lowered when the temperature is low. Next, the substrate is heat-treated in the treatment atmosphere of which the oxygen concentration is lowered. Sequentially, the treatment atmosphere is returned to that with the original oxygen concentration after the passage of a predetermined time after completing the heat treatment. Thereby, the substrate can be heat-treated, with the oxidization of the coating solution being controlled.