Photovoltaic cell
    1.
    发明授权
    Photovoltaic cell 失效
    光伏电池

    公开(公告)号:US06172296B2

    公开(公告)日:2001-01-09

    申请号:US08857907

    申请日:1997-05-16

    IPC分类号: H01L310216

    摘要: A photovoltaic cell in accordance with the present invention includes at least a metal layer, a semiconductive layer and a transparent electrode formed on a substrate. The metal layer is composed of a metal mainly containing aluminum; and has an x-ray diffraction pattern in which a (111) peak intensity is enhanced to at least 2.1 times a (200) peak intensity, at least 4.4 times a (220) peak intensity and at least 4.1 times a (311) peak intensity. The metal layer essentially consists of an aluminum-titanium alloy or an aluminum-magnesium alloy. An interlayer may be provided between the metal layer and the substrate.

    摘要翻译: 根据本发明的光伏电池至少包括形成在基板上的金属层,半导体层和透明电极。 金属层由主要含有铝的金属组成; 并且具有其中(111)峰强度增强至(200)峰强度的至少2.1倍,(220)峰强度的至少4.4倍和至少4.1倍(311)峰的x射线衍射图 金属层主要由铝 - 钛合金或铝 - 镁合金组成。 可以在金属层和基板之间设置中间层。

    Method for the formation of an indium oxide film by electrodeposition
process or electroless deposition process, a substrate provided with
the indium oxide film for a semiconductor element, and a semiconductor
element provided with the substrate
    3.
    发明授权
    Method for the formation of an indium oxide film by electrodeposition process or electroless deposition process, a substrate provided with the indium oxide film for a semiconductor element, and a semiconductor element provided with the substrate 有权
    通过电沉积法或无电沉积法形成氧化铟膜的方法,设置有用于半导体元件的氧化铟膜的衬底以及设置有衬底的半导体元件

    公开(公告)号:US6110347A

    公开(公告)日:2000-08-29

    申请号:US172774

    申请日:1998-10-15

    摘要: A method for forming an indium oxide film on an electrically conductive substrate by immersing the substrate and a counter electrode in an aqueous solution containing at least nitrate and indium ions and flowing an electric current between the substrate and the couter electrode, thereby causing indium oxide film formation on the substrate, is provided. A substrate for a semiconductor element and a photovoltaic element produced using the film forming method are also provided. An aqueous solution for the formation of an indium oxide film by an electroless deposition process, containing at least nitrate and indium ions and tartrate, is also disclosed. A film-forming method for the formation of an indium oxide film on a substrate by an electroless deposition process, using the aqueous solution, and a substrate for a semiconductor element and a photovoltaic element produced using the film-forming method are further provided.

    摘要翻译: 一种通过将基板和对电极浸入至少含有硝酸盐和铟离子的水溶液中并在基板和couter电极之间流动电流从而在导电基板上形成氧化铟膜的方法,从而使氧化铟膜 提供了衬底上的形成。 还提供了一种用于半导体元件的基板和使用该膜形成方法制造的光电元件。 还公开了通过无电沉积方法形成氧化铟膜的水溶液,其至少含有硝酸盐和铟离子和酒石酸盐。 还提供了一种通过使用该水溶液的无电沉积工艺在衬底上形成氧化铟膜的膜形成方法,以及使用该膜形成方法制造的半导体元件用基板和光电元件。

    Photovoltaic cell
    4.
    发明授权
    Photovoltaic cell 失效
    光伏电池

    公开(公告)号:US5986204A

    公开(公告)日:1999-11-16

    申请号:US820565

    申请日:1997-03-19

    IPC分类号: H01L31/00

    CPC分类号: H01L31/056 Y02E10/52

    摘要: By using an improved back reflecting layer, a photovoltaic cell having excellent migration resistance and a high photoelectric conversion efficiency is provided at high productivity. The photovoltaic cell includes a metal layer comprising a silver-aluminum alloy having a content of silver equal to or less than 30 atomic percent, the rest being aluminum, or a metal layer comprising a copper-aluminum alloy having a content of copper between 30 and 50 atomic percent, the rest being aluminum. It is preferable to form these layers at a relatively low temperature by sputtering, particularly at a temperature equal to or less than 110.degree. C. for the silver-aluminum alloy and at a temperature equal to or less than 120.degree. C. for the copper-aluminum alloy.

    摘要翻译: 通过使用改进的背反射层,以高生产率提供具有优异的耐迁移性和高光电转换效率的光伏电池。 光伏电池包括含有银含量等于或小于30原子%的银 - 铝合金的金属层,其余为铝,或包含铜含量在30〜 50原子%,其余为铝。 优选通过溅射在较低温度下形成这些层,特别是对于银 - 铝合金,等于或低于110℃的温度,并且在等于或小于120℃的温度下,对于铜 -铝合金。

    Electrodeposition method
    7.
    发明授权
    Electrodeposition method 失效
    电沉积法

    公开(公告)号:US06475367B1

    公开(公告)日:2002-11-05

    申请号:US09501522

    申请日:2000-02-09

    IPC分类号: C25D706

    摘要: There is disclosed an electrodeposition method capable of suppressing the drop in the power supply voltage and minimizing the heat loss by the electrodeposition current, thereby achieving uniform film formation with satisfactory characteristics. A conductive substrate is dipped in an electrodeposition bath held in an electrodeposition tank, and an oxide is electrolytically deposited on the conductive substrate. An electricity feed means as at least one electrode of the electrodeposition tank is composed of a conductive member so provided as to be in contact with a back surface of the conductive substrate, wherein the contact position of the electricity feed means and the conductive substrate is outside the electrodeposition bath, and wherein the resistance, including contact resistance, between the closer to the electricity feed means of a position of entry of the conductive substrate into the electrodeposition bath and a position of discharge of the conductive substrate from the electrodeposition bath, and the contact position of the conductive substrate with the electricity feed means is 20&OHgr; or less.

    摘要翻译: 公开了一种能够抑制电源电压降低并且通过电沉积电流最小化热损失的电沉积方法,从而获得具有令人满意的特性的均匀成膜。 将导电性基材浸渍在保持在电沉积槽中的电沉积浴中,氧化物电解沉积在导电性基材上。 一种供电装置,其特征在于,所述电沉积槽的至少一个电极由导电构件构成,所述导电构件设置为与所述导电基板的背面接触,其中所述供电装置和所述导电基板的接触位置在外部 电沉积浴,并且其中在导电基底进入电沉积浴的位置更接近馈电装置之间的电阻(包括接触电阻)和导电基底从电沉积浴放电的位置,以及 导电基板与供电装置的接触位置为20OMEGA以下。

    Photoconductive member
    9.
    发明授权
    Photoconductive member 失效
    感光元件

    公开(公告)号:US4490450A

    公开(公告)日:1984-12-25

    申请号:US479316

    申请日:1983-03-28

    IPC分类号: G03G5/082 G03G5/02 G03G5/08

    CPC分类号: G03G5/082

    摘要: A photoconductive member comprises a support for a photoconductive member and an amorphous layer having a layer constitution comprising a first layer region comprising an amorphous material containing silicon atoms and germanium atoms and a second layer region comprising an amorphous material containing silicon atoms and exhibiting photoconductivity, said first and second layer regions being provided successively from the side of said support.

    摘要翻译: 感光构件包括用于光电导构件的支撑体和具有包括包括含有硅原子和锗原子的无定形材料的第一层区域的层结构的非晶层和包含含硅原子并具有光电导性的非晶态材料的第二层区域, 第一和第二层区域从所述支撑体的侧面连续地设置。