公开(公告)号：US07157677B2

公开(公告)日：2007-01-02

申请号：US11178562

申请日：2005-07-12

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Hiroyuki Ogawa ,  Noritaka Akita

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Hiroyuki Ogawa ,  Noritaka Akita

IPC分类号： G02B7/04 ,  G02B27/40 ,  G02B27/64

CPC分类号： G02B27/40 ,  B23K26/705 ,  G01J1/04 ,  G01J1/0411 ,  G01J1/0448 ,  G01J1/4257 ,  G02B7/36

摘要： A knife edge is disposed at a height corresponding to a section on which a sectional image (light intensity distribution) is picked up in such a manner as to intercept a part of the section of the laser light. The knife edge is irradiated with the laser light, and the sectional image of the laser light is enlarged with an image forming optics, and is picked up by a CCD. While picking up the sectional image in this manner, focusing of the image forming optics is performed. Next, the knife edge is retracted from the optical path of the laser light, the laser light is allowed to enter the CCD via the image forming optics, and the sectional image of the laser light is picked up.

摘要翻译： 刀刃设置在与截面图像（光强度分布）被拾取的部分相对应的高度处，以截取激光的一部分的一部分。 用激光照射刀刃，用成像光学元件放大激光的截面图像，并用CCD拾取。 以这种方式拾取截面图像时，执行成像光学元件的聚焦。 接下来，刀刃从激光的光路缩回，允许激光经由图像形成光学器件进入CCD，并且拾取激光的截面图像。

公开(公告)号：US20060177973A1

公开(公告)日：2006-08-10

申请号：US11275961

申请日：2006-02-07

申请人： Yukio TANIGUCHI ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Noritaka Akita ,  Masakiyo Matsumura

发明人： Yukio TANIGUCHI ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Noritaka Akita ,  Masakiyo Matsumura

IPC分类号： H01L21/84 ,  H01L21/00

CPC分类号： H01L21/02667 ,  B23K26/0604 ,  B23K26/066 ,  G02B19/0014 ,  G02B19/0052 ,  G02B19/0095 ,  G02B27/0961 ,  G02B27/0988 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285

摘要： A generation method of a light intensity distribution uses a first light modulation element and a second light modulation element which are arranged to be apart from each other by a distance D and face each other in parallel to optically modulate a light beam which enters the light modulation elements, thereby generating a light intensity distribution on a target surface. The first light modulation element has a pattern formed by repeating a basic unit having a pitch P. The distance D is set to a distance with which the light intensity distribution generated on the predetermined surface is not changed even if a relative position of the first light modulation element and the second light modulation element is shifted in a plane direction.

摘要翻译： 光强分布的产生方法使用第一光调制元件和第二光调制元件，其被布置为彼此分开距离D并且彼此并行布置以光学地调制进入光调制的光束 从而在目标表面上产生光强度分布。 第一光调制元件具有通过重复具有间距P的基本单元形成的图案。距离D被设定为在预定表面上产生的光强度分布不改变的距离，即使第一光的相对位置 调制元件和第二光调制元件在平面方向上移位。

公开(公告)号：US20060043258A1

公开(公告)日：2006-03-02

申请号：US11178562

申请日：2005-07-12

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Hiroyuki Ogawa ,  Noritaka Akita

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Hiroyuki Ogawa ,  Noritaka Akita

IPC分类号： G02B7/04

CPC分类号： G02B27/40 ,  B23K26/705 ,  G01J1/04 ,  G01J1/0411 ,  G01J1/0448 ,  G01J1/4257 ,  G02B7/36

摘要： A knife edge is disposed at a height corresponding to a section on which a sectional image (light intensity distribution) is picked up in such a manner as to intercept a part of the section of the laser light. The knife edge is irradiated with the laser light, and the sectional image of the laser light is enlarged with an image forming optics, and is picked up by a CCD. While picking up the sectional image in this manner, focusing of the image forming optics is performed. Next, the knife edge is retracted from the optical path of the laser light, the laser light is allowed to enter the CCD via the image forming optics, and the sectional image of the laser light is picked up.

摘要翻译： 刀刃设置在与截面图像（光强度分布）被拾取的部分相对应的高度处，以截取激光的一部分的一部分。 用激光照射刀刃，用成像光学元件放大激光的截面图像，并用CCD拾取。 以这种方式拾取截面图像时，执行成像光学元件的聚焦。 接下来，刀刃从激光的光路缩回，允许激光经由图像形成光学器件进入CCD，并且拾取激光的截面图像。

公开(公告)号：US20060027809A1

公开(公告)日：2006-02-09

申请号：US11194607

申请日：2005-08-02

申请人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L29/76 ,  H01L23/544 ,  H01L29/04

CPC分类号： H01L21/02678 ,  H01L21/2026 ,  H01L21/268 ,  H01L23/544 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/78675 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.

摘要翻译： 促进在非晶或多晶膜中形成的再结晶区域的精确取向。 形成对准标记，其可用于在再结晶区域中形成诸如薄膜晶体管的电子器件的步骤。 此外，在从半导体膜获得大晶粒尺寸的晶相半导体的步骤中，在相同的曝光步骤中，在半导体膜上形成可用作后续步骤中的对准标记的标记结构。 因此，本发明包括调制光并形成用于结晶的光强度分布的光强调制结构，以及调制光并形成包括具有预定形状的图案的光强度分布的标记形成结构，并且还形成标记 在结晶区域上的预定位置。

公开(公告)号：US08183122B2

公开(公告)日：2012-05-22

申请号：US12838206

申请日：2010-07-16

申请人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L21/76

CPC分类号： H01L21/02678 ,  H01L21/2026 ,  H01L21/268 ,  H01L23/544 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/78675 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.

摘要翻译： 促进在非晶或多晶膜中形成的再结晶区域的精确取向。 形成对准标记，其可用于在再结晶区域中形成诸如薄膜晶体管的电子器件的步骤。 此外，在从半导体膜获得大晶粒尺寸的晶相半导体的步骤中，在相同的曝光步骤中，在半导体膜上形成可用作后续步骤中的对准标记的标记结构。 因此，本发明包括调制光并形成用于结晶的光强度分布的光强调制结构，以及调制光并形成包括具有预定形状的图案的光强度分布的标记形成结构，并且还形成标记 在结晶区域上的预定位置。

公开(公告)号：US20100304546A1

公开(公告)日：2010-12-02

申请号：US12838206

申请日：2010-07-16

申请人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

发明人： Hiroyuki Ogawa ,  Noritaka Akita ,  Yukio Taniguchi ,  Masato Hiramatsu ,  Masayuki Jyumonji ,  Masakiyo Matsumura

IPC分类号： H01L21/02

CPC分类号： H01L21/02678 ,  H01L21/2026 ,  H01L21/268 ,  H01L23/544 ,  H01L27/1214 ,  H01L27/1285 ,  H01L27/1288 ,  H01L29/78675 ,  H01L2223/5442 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： Exact alignment of a recrystallized region, which is to be formed in an amorphous or polycrystalline film, is facilitated. An alignment mark is formed, which is usable in a step of forming an electronic device, such as a thin-film transistor, in the recrystallized region. In addition, in a step of obtaining a large-grain-sized crystal-phase semiconductor from a semiconductor film, a mark structure that is usable as an alignment mark in a subsequent step is formed on the semiconductor film in the same exposure step. Thus, the invention includes a light intensity modulation structure that modulates light and forms a light intensity distribution for crystallization, and a mark forming structure that modulates light and forms a light intensity distribution including a pattern with a predetermined shape, and also forms a mark indicative of a predetermined position on a crystallized region.

摘要翻译： 促进在非晶或多晶膜中形成的再结晶区域的精确取向。 形成对准标记，其可用于在再结晶区域中形成诸如薄膜晶体管的电子器件的步骤。 此外，在从半导体膜获得大晶粒尺寸的晶相半导体的步骤中，在相同的曝光步骤中，在半导体膜上形成可用作后续步骤中的对准标记的标记结构。 因此，本发明包括调制光并形成用于结晶的光强度分布的光强调制结构，以及调制光并形成包括具有预定形状的图案的光强度分布的标记形成结构，并且还形成标记 在结晶区域上的预定位置。

公开(公告)号：US07499147B2

公开(公告)日：2009-03-03

申请号：US11275961

申请日：2006-02-07

申请人： Yukio Taniguchi ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Noritaka Akita ,  Masakiyo Matsumura

发明人： Yukio Taniguchi ,  Hiroyuki Ogawa ,  Masayuki Jyumonji ,  Noritaka Akita ,  Masakiyo Matsumura

IPC分类号： G03B27/72 ,  G03B27/32

CPC分类号： H01L21/02667 ,  B23K26/0604 ,  B23K26/066 ,  G02B19/0014 ,  G02B19/0052 ,  G02B19/0095 ,  G02B27/0961 ,  G02B27/0988 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285

摘要： A generation method of a light intensity distribution uses a first light modulation element and a second light modulation element which are arranged to be apart from each other by a distance D and face each other in parallel to optically modulate a light beam which enters the light modulation elements, thereby generating a light intensity distribution on a target surface. The first light modulation element has a pattern formed by repeating a basic unit having a pitch P. The distance D is set to a distance with which the light intensity distribution generated on the predetermined surface is not changed even if a relative position of the first light modulation element and the second light modulation element is shifted in a plane direction.

摘要翻译： 光强分布的产生方法使用第一光调制元件和第二光调制元件，其被布置为彼此分开距离D并且彼此并行布置以光学地调制进入光调制的光束 从而在目标表面上产生光强度分布。 第一光调制元件具有通过重复具有间距P的基本单元形成的图案。距离D被设定为在预定表面上产生的光强度分布不改变的距离，即使第一光的相对位置 调制元件和第二光调制元件在平面方向上移位。

公开(公告)号：US20080289573A1

公开(公告)日：2008-11-27

申请号：US12166997

申请日：2008-07-02

申请人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Masayuki JYUMONJI ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： B05B5/00

CPC分类号： H01L21/02678 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  C30B13/24 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1004 ,  Y10T117/1008

摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

摘要翻译： 提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求 ，结晶装置，薄膜​​晶体管和显示装置。 当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少， 熔融非单晶半导体的光强度。 此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

公开(公告)号：US20060186412A1

公开(公告)日：2006-08-24

申请号：US11408022

申请日：2006-04-21

申请人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

发明人： Masayuki Jyumonji ,  Hiroyuki Ogawa ,  Masakiyo Matsumura ,  Masato Hiramatsu ,  Yoshinobu Kimura ,  Yukio Taniguchi ,  Tomoya Kato

IPC分类号： H01L29/76

CPC分类号： H01L21/02678 ,  B23K26/0622 ,  B23K26/064 ,  B23K26/0648 ,  B23K26/066 ,  C30B13/24 ,  H01L21/02686 ,  H01L21/2026 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/78675 ,  Y10T117/1004 ,  Y10T117/1008

摘要： There are provided a crystallization method which can design laser beam having a light intensity and a distribution optimized on an incident surface of a substrate, form a desired crystallized structure while suppressing generation of any other undesirable structure area and satisfy a demand for low-temperature processing, a crystallization apparatus, a thin film transistor and a display apparatus. When crystallizing a non-single-crystal semiconductor thin film by irradiating laser beam thereto, irradiation light beam to the non-single-crystal semiconductor thin film have a light intensity with a light intensity distribution which cyclically repeats a monotonous increase and a monotonous decrease and a light intensity which melts the non-single-crystal semiconductor. Further, at least a silicon oxide film is provided on a laser beam incident surface of the non-single-crystal semiconductor film.

摘要翻译： 提供了一种结晶方法，其可以设计具有在基板的入射表面上优化的光强度和分布的激光束，形成期望的结晶结构，同时抑制任何其它不希望的结构面积的产生并满足对低温加工的需求 ，结晶装置，薄膜​​晶体管和显示装置。 当通过照射激光束使非单晶半导体薄膜结晶时，对非单晶半导体薄膜的照射光束具有光强度分布的光强度，其周期性地重复单调增加和单调减少， 熔融非单晶半导体的光强度。 此外，在非单晶半导体膜的激光入射面上至少设置氧化硅膜。

公开(公告)号：US20070096103A1

公开(公告)日：2007-05-03

申请号：US11612768

申请日：2006-12-19

申请人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

发明人： Masayuki Jyumonji ,  Masakiyo Matsumura ,  Yoshinobu Kimura ,  Mikihiko Nishitani ,  Masato Hiramatsu ,  Yukio Taniguchi ,  Fumiki Nakano ,  Hiroyuki Ogawa

IPC分类号： H01L29/04

CPC分类号： B23K26/04 ,  B23K26/066 ,  B23K26/067 ,  B23K26/073 ,  B23K26/705 ,  H01L21/02532 ,  H01L21/02678 ,  H01L21/02686 ,  H01L21/268 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/78675

摘要： The semiconductor device according to the present invention has a semiconductor layer having not smaller than two types of crystal grains different in size within a semiconductor circuit on a same substrate.

摘要翻译： 根据本发明的半导体器件具有在相同基板上的半导体电路内具有不小于两种尺寸不同的晶粒的半导体层。