公开(公告)号：US20060115990A1

公开(公告)日：2006-06-01

申请号：US11270621

申请日：2005-11-10

申请人： Yuriko Seino ,  Yasuhiko Sato ,  Yasunobu Onishi

发明人： Yuriko Seino ,  Yasuhiko Sato ,  Yasunobu Onishi

IPC分类号： H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/0332 ,  H01L21/0337

摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate, subjecting the underlayer film to an oxidizing treatment, forming an intermediate film which becomes a mask of the underlayer film, forming a resist film on the intermediate film, exposing the resist film to light to form a resist pattern, transferring the resist pattern onto the intermediate film to form an intermediate film pattern, and transferring the intermediate film pattern onto the underlayer film to form an underlayer film pattern.

摘要翻译： 根据本发明的一个方面，提供一种图案形成方法，包括在半导体衬底上形成的被加工膜上形成下层膜，对下层膜进行氧化处理，形成中间膜， 下层膜的掩模，在中间膜上形成抗蚀剂膜，将抗蚀剂膜曝光以形成抗蚀剂图案，将抗蚀剂图案转印到中间膜上以形成中间膜图案，并将中间膜图案转印到 下层膜形成下层膜图案。

公开(公告)号：US07300884B2

公开(公告)日：2007-11-27

申请号：US11270621

申请日：2005-11-10

申请人： Yuriko Seino ,  Yasuhiko Sato ,  Yasunobu Onishi

发明人： Yuriko Seino ,  Yasuhiko Sato ,  Yasunobu Onishi

IPC分类号： H01L21/302

CPC分类号： H01L21/31144 ,  H01L21/0332 ,  H01L21/0337

摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate, subjecting the underlayer film to an oxidizing treatment, forming an intermediate film which becomes a mask of the underlayer film, forming a resist film on the intermediate film, exposing the resist film to light to form a resist pattern, transferring the resist pattern onto the intermediate film to form an intermediate film pattern, and transferring the intermediate film pattern onto the underlayer film to form an underlayer film pattern.

摘要翻译： 根据本发明的一个方面，提供一种图案形成方法，包括在半导体衬底上形成的被加工膜上形成下层膜，对下层膜进行氧化处理，形成中间膜， 下层膜的掩模，在中间膜上形成抗蚀剂膜，将抗蚀剂膜曝光以形成抗蚀剂图案，将抗蚀剂图案转印到中间膜上以形成中间膜图案，并将中间膜图案转印到 下层膜形成下层膜图案。

公开(公告)号：US06569595B1

公开(公告)日：2003-05-27

申请号：US09512286

申请日：2000-02-24

申请人： Yasuhiko Sato ,  Eishi Shiobara ,  Yasunobu Onishi ,  Shuji Hayase ,  Yoshihiko Nakano

发明人： Yasuhiko Sato ,  Eishi Shiobara ,  Yasunobu Onishi ,  Shuji Hayase ,  Yoshihiko Nakano

IPC分类号： G03F700

CPC分类号： G03F7/091

摘要： A method of forming a pattern which comprises the steps of, forming a matrix pattern on a work film, filling an opened space in the matrix pattern with a mask material layer containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formulas (CP1) to (CP4) on the work film, forming a mask material pattern by removing the matrix pattern, and forming a work film pattern by transferring the mask material pattern to the work film: wherein R is halogen atom, hydrogen atom or a substituted or unsubstituted hydrocarbon group, A is a polyvalent organic group, and m, n and k denote respectively a positive integer.

摘要翻译： 一种形成图案的方法，包括以下步骤：在工作膜上形成矩阵图案，用掩模材料层填充矩阵图案中的开放空间，掩模材料层含有至少一种具有由 在工作薄膜上的以下通式（CP1）〜（CP4），通过去除矩阵图案形成掩模材料图案，并通过将掩模材料图案转印到工作薄膜上形成工作薄膜图案：其中R是卤素原子， 氢原子或取代或未取代的烃基，A为多价有机基团，m，n和k分别表示正整数。

公开(公告)号：US07198886B2

公开(公告)日：2007-04-03

申请号：US11138216

申请日：2005-05-27

申请人： Yasuhiko Sato ,  Tsuyoshi Shibata ,  Junko Ohuchi ,  Yasunobu Onishi

发明人： Yasuhiko Sato ,  Tsuyoshi Shibata ,  Junko Ohuchi ,  Yasunobu Onishi

IPC分类号： G03F7/30

CPC分类号： G03F7/11 ,  H01L21/0274 ,  H01L21/3081

摘要： A method of forming a pattern, which comprises forming a masking material layer on a surface of a working film by coating the surface with a solution of a mixture comprising an inorganic compound having a bond between an inorganic element and oxygen atom, and a volatile unit, volatilizing the volatile unit to thereby make the masking material layer porous, forming a resist layer on a surface of the masking material layer, patterning the resist film to form a resist pattern, dry-etching the masking material layer to thereby transfer the resist pattern to the masking material layer, thereby forming a masking material pattern, and dry etching the working film to thereby transfer the masking material pattern to the working film to thereby form a working film pattern.

摘要翻译： 一种形成图案的方法，其包括通过用包含无机元素和氧原子之间的键的无机化合物的混合物的溶液和挥发性单元涂覆表面来在工作膜的表面上形成掩模材料层 挥发挥发性单元，使掩模材料层多孔，在掩模材料层的表面上形成抗蚀剂层，图案化抗蚀剂膜以形成抗蚀剂图案，干蚀刻掩模材料层，从而将抗蚀剂图案 到掩蔽材料层，从而形成掩模材料图案，并干燥蚀刻加工膜，从而将掩模材料图案转印到工作膜上，从而形成工作膜图案。

公开(公告)号：US20050153245A1

公开(公告)日：2005-07-14

申请号：US10940757

申请日：2004-09-15

申请人： Yasuhiko Sato ,  Yasunobu Onishi

发明人： Yasuhiko Sato ,  Yasunobu Onishi

IPC分类号： G03F7/00 ,  G03F7/039 ,  G03F7/075 ,  G03F7/09 ,  G03F7/36

CPC分类号： G03F7/0035 ,  G03F7/0392 ,  G03F7/0757 ,  G03F7/094

摘要： Disclosed is a method of forming a pattern comprising coating a solution containing a compound having a silicon-nitrogen linkage in the main chain thereof over a surface of a working film to form a mask, replacing the nitrogen in the mask by oxygen, forming a resist film on a surface of the mask, forming a resist pattern by subjecting the resist film to a patterning exposure and to a developing treatment, transcribing the resist pattern to the mask to form a masking pattern, and transcribing the masking pattern to the working film to form a working film pattern.

摘要翻译： 公开了一种形成图案的方法，包括在工作膜的表面上在其主链中涂覆含有具有硅 - 氮键的化合物的溶液以形成掩模，用氧代替掩模中的氮，形成抗蚀剂 在掩模的表面上形成抗蚀剂图案，通过使抗蚀剂膜进行图案化曝光和显影处理，将抗蚀剂图案转印到掩模以形成掩模图案，并将掩模图案转印到工作膜上，形成抗蚀剂图案 形成工作电影模式。

公开(公告)号：US06806021B2

公开(公告)日：2004-10-19

申请号：US10109714

申请日：2002-04-01

申请人： Yasuhiko Sato ,  Yasunobu Onishi

发明人： Yasuhiko Sato ,  Yasunobu Onishi

IPC分类号： B05D300

CPC分类号： G03F7/0035 ,  G03F7/0392 ,  G03F7/0757 ,  G03F7/094

摘要： Disclosed is a method of forming a pattern comprising coating a solution containing a compound having a silicon-nitrogen linkage in the main chain thereof over a surface of a working film to form a mask, replacing the nitrogen in the mask by oxygen, forming a resist film on a surface of the mask, forming a resist pattern by subjecting the resist film to a patterning exposure and to a developing treatment, transcribing the resist pattern to the mask to form a masking pattern, and transcribing the masking pattern to the working film to form a working film pattern.

摘要翻译： 公开了一种形成图案的方法，包括在工作膜的表面上在其主链中涂覆含有具有硅 - 氮键的化合物的溶液以形成掩模，用氧代替掩模中的氮，形成抗蚀剂 在掩模的表面上形成抗蚀剂图案，通过使抗蚀剂膜进行图案化曝光和显影处理，将抗蚀剂图案转印到掩模以形成掩模图案，并将掩模图案转印到工作膜上，形成抗蚀剂图案 形成工作电影模式。

公开(公告)号：US20060127815A1

公开(公告)日：2006-06-15

申请号：US11296480

申请日：2005-12-08

申请人： Yasuhiko Sato ,  Yasunobu Onishi

发明人： Yasuhiko Sato ,  Yasunobu Onishi

IPC分类号： G03F7/00

CPC分类号： G03F7/094 ,  G03F7/0382 ,  G03F7/0392 ,  G03F7/091 ,  G03F7/093 ,  G03F7/11 ,  G03F7/115

摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming a first resist film on a film to be worked formed on a semiconductor substrate, forming a second resist film on the first resist film, forming a resist pattern from the second resist film, forming an overcoat film containing a metal element or a semi-conducting element on the resist pattern, insolubilizing, in a predetermined solvent, a portion of the overcoat film at a predetermined distance from an interface between the overcoat film and the resist pattern, removing, with the solvent, a portion of the overcoat film soluble in the solvent to form an overcoat film pattern, transferring the overcoat film pattern to the first resist film to form a lower-layer resist film pattern, and transferring the lower-layer resist film pattern to the film to be worked to form a pattern on the film.

摘要翻译： 根据本发明的一个方面，提供了一种图案形成方法，包括在半导体衬底上形成的待加工膜上形成第一抗蚀剂膜，在第一抗蚀剂膜上形成第二抗蚀剂膜，从第一抗蚀剂图案形成抗蚀剂图案 在抗蚀剂图案上形成含有金属元素或半导体元件的外涂膜，在规定的溶剂中不溶解从外涂膜与抗蚀剂之间的界面预定距离的一部分覆盖膜 用溶剂除去一部分可溶于溶剂的外涂膜形成外涂膜图案，将覆盖膜图案转印到第一抗蚀剂膜上以形成下层抗蚀剂膜图案， 层抗蚀剂膜图案到待加工的膜以在膜上形成图案。

公开(公告)号：US06576562B2

公开(公告)日：2003-06-10

申请号：US10014459

申请日：2001-12-14

申请人： Junko Ohuchi ,  Yasuhiko Sato ,  Eishi Shiobara ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Yasunobu Onishi

发明人： Junko Ohuchi ,  Yasuhiko Sato ,  Eishi Shiobara ,  Hisataka Hayashi ,  Tokuhisa Ohiwa ,  Yasunobu Onishi

IPC分类号： H01L21302

CPC分类号： H01L21/76808 ,  H01L21/0271 ,  H01L21/288 ,  H01L21/31144 ,  H01L21/32051

摘要： A manufacturing method of semiconductor device comprises forming a mask material having an aromatic ring and carbon content of 80 wt % or more on an object, forming a mask material pattern by etching the mask material to a desired pattern, and etching the object to transfer the mask material pattern as a mask to the object.

公开(公告)号：US06420271B2

公开(公告)日：2002-07-16

申请号：US09814839

申请日：2001-03-23

申请人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

发明人： Yasuhiko Sato ,  Eishi Shiobara ,  Motoyuki Sato ,  Yasunobu Onishi ,  Hiroshi Tomita ,  Tokuhisa Ohiwa ,  Junko Ohuchi ,  Hisataka Hayashi

IPC分类号： H01L214763

CPC分类号： H01L21/31144 ,  G03F7/085 ,  G03F7/09 ,  H01L21/3081 ,  H01L21/32139

摘要： A method of forming a pattern comprising the steps of, forming a lower film on a substrate, the lower film being a film containing carbon atom at a ratio of 80 wt % or more, or a vapor phase deposition film, either applying an adhesion-promoting treatment to a surface of the lower film or forming an adhesion-promoting on the lower film, forming an intermediate film on a surface of the lower film, forming a resist film on the intermediate film, forming a resist pattern by conducting a patterning exposure of the resist film, forming an intermediate film pattern by transferring the resist pattern to the intermediate film, and forming a lower film pattern by transferring the intermediate film pattern to the lower film.

摘要翻译： 一种形成图案的方法，包括以下步骤：在基底上形成下膜，下膜是含有80重量％以上的碳原子的膜或气相沉积膜， 促进对下膜的表面的处理或在下膜上形成粘合促进，在下膜的表面上形成中间膜，在中间膜上形成抗蚀剂膜，通过进行图案曝光形成抗蚀剂图案 的抗蚀剂膜，通过将抗蚀剂图案转印到中间膜而形成中间膜图案，并通过将中间膜图案转印到下膜来形成下膜图案。

公开(公告)号：US6054254A

公开(公告)日：2000-04-25

申请号：US108967

申请日：1998-07-02

申请人： Yasuhiko Sato ,  Yasunobu Onishi

发明人： Yasuhiko Sato ,  Yasunobu Onishi

IPC分类号： G03F7/00 ,  G03F7/004 ,  G03F7/039 ,  G03F7/09 ,  G03F7/095 ,  G03F7/20 ,  G03C5/56 ,  G03C1/76

CPC分类号： G03F1/78 ,  G03F7/0045 ,  G03F7/039 ,  G03F7/091 ,  G03F7/095 ,  G03F7/0035 ,  G03F7/2063

摘要： A method of forming a pattern which comprises the steps of forming an underlying film on a work film, forming a resist film on the underlying film, exposing the underlying film and the resist film to a patterning exposure light, and developing predetermined regions thus exposed of the resist film and the underlying film with a developing solution. The underlying film has a property that the solubility thereof to the developing solution can be changed by an action of an acid. The resist film and/or the underlying film contains a compound which is capable of generating the acid.

摘要翻译： 一种形成图案的方法，包括以下步骤：在工作膜上形成下面的膜，在下面的膜上形成抗蚀剂膜，将下面的膜和抗蚀剂膜暴露于图案化曝光光，并将由此露出的预定区域 抗蚀剂膜和具有显影溶液的底层膜。 底层膜具有通过酸的作用可以改变其对显影液的溶解性的性质。 抗蚀剂膜和/或底层膜含有能够产生酸的化合物。