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1.发明申请Pattern forming method, underlayer film forming composition, and method of manufacturing semiconductor device 失效图案形成方法，下层膜形成组合物和半导体器件的制造方法公开(公告)号：US20060115990A1
公开(公告)日：2006-06-01
申请号：US11270621
申请日：2005-11-10
申请人： Yuriko Seino , Yasuhiko Sato , Yasunobu Onishi
发明人： Yuriko Seino , Yasuhiko Sato , Yasunobu Onishi
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/0332 , H01L21/0337
摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate, subjecting the underlayer film to an oxidizing treatment, forming an intermediate film which becomes a mask of the underlayer film, forming a resist film on the intermediate film, exposing the resist film to light to form a resist pattern, transferring the resist pattern onto the intermediate film to form an intermediate film pattern, and transferring the intermediate film pattern onto the underlayer film to form an underlayer film pattern.
摘要翻译： 根据本发明的一个方面，提供一种图案形成方法，包括在半导体衬底上形成的被加工膜上形成下层膜，对下层膜进行氧化处理，形成中间膜， 下层膜的掩模，在中间膜上形成抗蚀剂膜，将抗蚀剂膜曝光以形成抗蚀剂图案，将抗蚀剂图案转印到中间膜上以形成中间膜图案，并将中间膜图案转印到 下层膜形成下层膜图案。
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2.发明授权Pattern forming method, underlayer film forming composition, and method of manufacturing semiconductor device 失效图案形成方法，下层膜形成组合物和半导体器件的制造方法公开(公告)号：US07300884B2
公开(公告)日：2007-11-27
申请号：US11270621
申请日：2005-11-10
申请人： Yuriko Seino , Yasuhiko Sato , Yasunobu Onishi
发明人： Yuriko Seino , Yasuhiko Sato , Yasunobu Onishi
IPC分类号： H01L21/302
CPC分类号： H01L21/31144 , H01L21/0332 , H01L21/0337
摘要： According to an aspect of the invention, there is provided a pattern forming method comprising forming an underlayer film on a film to be worked which has been formed on a semiconductor substrate, subjecting the underlayer film to an oxidizing treatment, forming an intermediate film which becomes a mask of the underlayer film, forming a resist film on the intermediate film, exposing the resist film to light to form a resist pattern, transferring the resist pattern onto the intermediate film to form an intermediate film pattern, and transferring the intermediate film pattern onto the underlayer film to form an underlayer film pattern.
摘要翻译： 根据本发明的一个方面，提供一种图案形成方法，包括在半导体衬底上形成的被加工膜上形成下层膜，对下层膜进行氧化处理，形成中间膜， 下层膜的掩模，在中间膜上形成抗蚀剂膜，将抗蚀剂膜曝光以形成抗蚀剂图案，将抗蚀剂图案转印到中间膜上以形成中间膜图案，并将中间膜图案转印到 下层膜形成下层膜图案。
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公开(公告)号：US20050233255A1
公开(公告)日：2005-10-20
申请号：US11138216
申请日：2005-05-27
申请人： Yasuhiko Sato , Tsuyoshi Shibata , Junko Ohuchi , Yasunobu Onishi
发明人： Yasuhiko Sato , Tsuyoshi Shibata , Junko Ohuchi , Yasunobu Onishi
IPC分类号： H01L21/027 , G03F7/11 , H01L21/308 , G03C5/00
CPC分类号： G03F7/11 , H01L21/0274 , H01L21/3081
摘要： A method of forming a pattern, which comprises forming a masking material layer on a surface of a working film by coating the surface with a solution of a mixture comprising an inorganic compound having a bond between an inorganic element and oxygen atom, and a volatile unit, volatilizing the volatile unit to thereby make the masking material layer porous, forming a resist layer on a surface of the masking material layer, patterning the resist film to form a resist pattern, dry-etching the masking material layer to thereby transfer the resist pattern to the masking material layer, thereby forming a masking material pattern, and dry etching the working film to thereby transfer the masking material pattern to the working film to thereby form a working film pattern.
摘要翻译： 一种形成图案的方法，其包括通过用包含无机元素和氧原子之间的键的无机化合物的混合物的溶液和挥发性单元涂覆表面来在工作膜的表面上形成掩模材料层 挥发挥发性单元，使掩模材料层多孔，在掩模材料层的表面上形成抗蚀剂层，图案化抗蚀剂膜以形成抗蚀剂图案，干蚀刻掩模材料层，从而将抗蚀剂图案 到掩蔽材料层，从而形成掩模材料图案，并干燥蚀刻加工膜，从而将掩模材料图案转印到工作膜上，从而形成工作膜图案。
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公开(公告)号：US06270948B1
公开(公告)日：2001-08-07
申请号：US09327223
申请日：1999-06-07
申请人： Yasuhiko Sato , Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasunobu Onishi , Eishi Shiobara , Seiro Miyoshi , Hideto Matsuyama , Masaki Narita , Sawako Yoshikawa
发明人： Yasuhiko Sato , Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasunobu Onishi , Eishi Shiobara , Seiro Miyoshi , Hideto Matsuyama , Masaki Narita , Sawako Yoshikawa
IPC分类号： G03F700
CPC分类号： G03F7/094 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02282 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/3121
摘要： A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0° C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.
摘要翻译： 一种形成图案的方法，包括以下步骤：在工作薄膜上形成有机硅膜，所述有机硅膜包含其主链中具有硅 - 硅键的有机硅化合物和玻璃化转变温度为0℃，或 在有机硅膜上形成抗蚀剂图案，通过利用含有选自氯，溴中的至少一种原子的蚀刻气体，通过蚀刻有机硅膜来转印有机硅膜上的抗蚀剂图案 和碘。 采用通过蚀刻获得的有机硅图案用作对工作膜进行图案化的掩模。
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公开(公告)号：US06569595B1
公开(公告)日：2003-05-27
申请号：US09512286
申请日：2000-02-24
IPC分类号： G03F700
CPC分类号： G03F7/091
摘要： A method of forming a pattern which comprises the steps of, forming a matrix pattern on a work film, filling an opened space in the matrix pattern with a mask material layer containing at least one kind of a network carbon polymer having a repeating unit represented by the following general formulas (CP1) to (CP4) on the work film, forming a mask material pattern by removing the matrix pattern, and forming a work film pattern by transferring the mask material pattern to the work film: wherein R is halogen atom, hydrogen atom or a substituted or unsubstituted hydrocarbon group, A is a polyvalent organic group, and m, n and k denote respectively a positive integer.
摘要翻译： 一种形成图案的方法，包括以下步骤：在工作膜上形成矩阵图案，用掩模材料层填充矩阵图案中的开放空间，掩模材料层含有至少一种具有由 在工作薄膜上的以下通式（CP1）〜（CP4），通过去除矩阵图案形成掩模材料图案，并通过将掩模材料图案转印到工作薄膜上形成工作薄膜图案：其中R是卤素原子， 氢原子或取代或未取代的烃基，A为多价有机基团，m，n和k分别表示正整数。
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公开(公告)号：US07198886B2
公开(公告)日：2007-04-03
申请号：US11138216
申请日：2005-05-27
申请人： Yasuhiko Sato , Tsuyoshi Shibata , Junko Ohuchi , Yasunobu Onishi
发明人： Yasuhiko Sato , Tsuyoshi Shibata , Junko Ohuchi , Yasunobu Onishi
IPC分类号： G03F7/30
CPC分类号： G03F7/11 , H01L21/0274 , H01L21/3081
摘要： A method of forming a pattern, which comprises forming a masking material layer on a surface of a working film by coating the surface with a solution of a mixture comprising an inorganic compound having a bond between an inorganic element and oxygen atom, and a volatile unit, volatilizing the volatile unit to thereby make the masking material layer porous, forming a resist layer on a surface of the masking material layer, patterning the resist film to form a resist pattern, dry-etching the masking material layer to thereby transfer the resist pattern to the masking material layer, thereby forming a masking material pattern, and dry etching the working film to thereby transfer the masking material pattern to the working film to thereby form a working film pattern.
摘要翻译： 一种形成图案的方法，其包括通过用包含无机元素和氧原子之间的键的无机化合物的混合物的溶液和挥发性单元涂覆表面来在工作膜的表面上形成掩模材料层 挥发挥发性单元，使掩模材料层多孔，在掩模材料层的表面上形成抗蚀剂层，图案化抗蚀剂膜以形成抗蚀剂图案，干蚀刻掩模材料层，从而将抗蚀剂图案 到掩蔽材料层，从而形成掩模材料图案，并干燥蚀刻加工膜，从而将掩模材料图案转印到工作膜上，从而形成工作膜图案。
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7.发明申请Method for forming a pattern and method of manufacturing semiconductor device 审中-公开用于形成图案的方法和制造半导体器件的方法公开(公告)号：US20050153245A1
公开(公告)日：2005-07-14
申请号：US10940757
申请日：2004-09-15
申请人： Yasuhiko Sato , Yasunobu Onishi
发明人： Yasuhiko Sato , Yasunobu Onishi
CPC分类号： G03F7/0035 , G03F7/0392 , G03F7/0757 , G03F7/094
摘要： Disclosed is a method of forming a pattern comprising coating a solution containing a compound having a silicon-nitrogen linkage in the main chain thereof over a surface of a working film to form a mask, replacing the nitrogen in the mask by oxygen, forming a resist film on a surface of the mask, forming a resist pattern by subjecting the resist film to a patterning exposure and to a developing treatment, transcribing the resist pattern to the mask to form a masking pattern, and transcribing the masking pattern to the working film to form a working film pattern.
摘要翻译： 公开了一种形成图案的方法，包括在工作膜的表面上在其主链中涂覆含有具有硅 - 氮键的化合物的溶液以形成掩模，用氧代替掩模中的氮，形成抗蚀剂 在掩模的表面上形成抗蚀剂图案，通过使抗蚀剂膜进行图案化曝光和显影处理，将抗蚀剂图案转印到掩模以形成掩模图案，并将掩模图案转印到工作膜上，形成抗蚀剂图案 形成工作电影模式。
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8.发明授权Method for forming a pattern and method of manufacturing semiconductor device 失效用于形成图案的方法和制造半导体器件的方法公开(公告)号：US06806021B2
公开(公告)日：2004-10-19
申请号：US10109714
申请日：2002-04-01
申请人： Yasuhiko Sato , Yasunobu Onishi
发明人： Yasuhiko Sato , Yasunobu Onishi
IPC分类号： B05D300
CPC分类号： G03F7/0035 , G03F7/0392 , G03F7/0757 , G03F7/094
摘要： Disclosed is a method of forming a pattern comprising coating a solution containing a compound having a silicon-nitrogen linkage in the main chain thereof over a surface of a working film to form a mask, replacing the nitrogen in the mask by oxygen, forming a resist film on a surface of the mask, forming a resist pattern by subjecting the resist film to a patterning exposure and to a developing treatment, transcribing the resist pattern to the mask to form a masking pattern, and transcribing the masking pattern to the working film to form a working film pattern.
摘要翻译： 公开了一种形成图案的方法，包括在工作膜的表面上在其主链中涂覆含有具有硅 - 氮键的化合物的溶液以形成掩模，用氧代替掩模中的氮，形成抗蚀剂 在掩模的表面上形成抗蚀剂图案，通过使抗蚀剂膜进行图案化曝光和显影处理，将抗蚀剂图案转印到掩模以形成掩模图案，并将掩模图案转印到工作膜上，形成抗蚀剂图案 形成工作电影模式。
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9.发明授权Composition for underlying film and method of forming a pattern using the film 失效用于底膜的组合物和使用该膜形成图案的方法
公开(公告)号：US6054254A
公开(公告)日：2000-04-25
申请号：US108967
申请日：1998-07-02
申请人： Yasuhiko Sato , Yasunobu Onishi
发明人： Yasuhiko Sato , Yasunobu Onishi
CPC分类号： G03F1/78 , G03F7/0045 , G03F7/039 , G03F7/091 , G03F7/095 , G03F7/0035 , G03F7/2063
摘要： A method of forming a pattern which comprises the steps of forming an underlying film on a work film, forming a resist film on the underlying film, exposing the underlying film and the resist film to a patterning exposure light, and developing predetermined regions thus exposed of the resist film and the underlying film with a developing solution. The underlying film has a property that the solubility thereof to the developing solution can be changed by an action of an acid. The resist film and/or the underlying film contains a compound which is capable of generating the acid.
摘要翻译： 一种形成图案的方法，包括以下步骤：在工作膜上形成下面的膜，在下面的膜上形成抗蚀剂膜，将下面的膜和抗蚀剂膜暴露于图案化曝光光，并将由此露出的预定区域 抗蚀剂膜和具有显影溶液的底层膜。 底层膜具有通过酸的作用可以改变其对显影液的溶解性的性质。 抗蚀剂膜和/或底层膜含有能够产生酸的化合物。
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公开(公告)号：US6025117A
公开(公告)日：2000-02-15
申请号：US986517
申请日：1997-12-08
申请人： Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasuhiko Sato , Seiro Miyoshi , Toru Ushirogouchi , Sawako Yoshikawa , Hideto Matsuyama , Yasunobu Onishi , Masaki Narita , Toshiro Hiraoka
发明人： Yoshihiko Nakano , Rikako Kani , Shuji Hayase , Yasuhiko Sato , Seiro Miyoshi , Toru Ushirogouchi , Sawako Yoshikawa , Hideto Matsuyama , Yasunobu Onishi , Masaki Narita , Toshiro Hiraoka
CPC分类号： C08G83/003 , C08G77/60 , G03F7/0754 , G03F7/091
摘要： A polysilane having a repeating unit represented by the following general formula (LPS-I), ##STR1## wherein A is a bivalent organic group, R.sup.1 substituents may be the same or different and are selected from hydrogen atom and substituted or unsubstituted hydrocarbon group and silyl group. The polysilane is excellent in solublity in an organic solvent so that it can be formed into a film by way of a coating method, which is excellent in mechanical strength and heat resistance. The polysilane can be employed as an etching mask to be disposed under a resist in a manufacturing method of a semiconductor device. The polysilane exhibits anti-reflective effect during exposure, a large etch rate ratio in relative to a resist, and excellent dry etching resistance.
摘要翻译： 具有由以下通式表示的重复单元的聚硅烷（LPS-I），其中A是二价有机基团，R 1取代基可以相同或不同，并且选自氢原子和取代或未取代的烃基和甲硅烷基。 聚硅烷在有机溶剂中的共溶剂性优异，可以通过涂布法形成膜，机械强度和耐热性优异。 在半导体器件的制造方法中，可以将聚硅烷用作蚀刻掩模以设置在抗蚀剂下。 聚硅烷在曝光期间表现出抗反射效果，相对于抗蚀剂具有大的蚀刻速率比和优异的耐干蚀刻性。
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