公开(公告)号：US5527730A

公开(公告)日：1996-06-18

申请号：US425081

申请日：1995-04-19

申请人： Yuzo Kayaoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

发明人： Yuzo Kayaoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/70 ,  H01L27/00

CPC分类号： H01L28/40 ,  H01L21/28537 ,  H01L27/112 ,  H01L27/11226 ,  Y10S148/14 ,  Y10S438/974

摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

摘要翻译： 在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。 暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。 金属被选择性地沉积在以左氢原子终止的部分上。

公开(公告)号：US5963812A

公开(公告)日：1999-10-05

申请号：US814016

申请日：1997-03-10

申请人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

发明人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/336

CPC分类号： H01L28/40 ,  H01L21/28537 ,  H01L27/112 ,  H01L27/11226 ,  Y10S148/14 ,  Y10S438/974

摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

摘要翻译： 在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。 暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。 金属被选择性地沉积在以左氢原子终止的部分上。

公开(公告)号：US5580808A

公开(公告)日：1996-12-03

申请号：US327799

申请日：1994-10-24

申请人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

发明人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/265

CPC分类号： H01L28/40 ,  H01L21/28537 ,  H01L27/112 ,  H01L27/11226 ,  Y10S148/14 ,  Y10S438/974

摘要： A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.

摘要翻译： 一种通过首先在半导体内形成接触孔来制造掩模ROM的方法。 然后施加表面处理以将氢原子供给到半导体的表面。 用能量束选择性地照射接触孔，以产生照射的接触孔和未照射的接触孔。 在未经照射的接触孔中，形成导电或半导体薄膜，并在导电或半导体薄膜上形成电路。 电路和未照射的孔彼此连接，并且照射的孔和电路彼此绝缘。

公开(公告)号：US5569614A

公开(公告)日：1996-10-29

申请号：US435834

申请日：1995-05-05

申请人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

发明人： Yuzo Kataoka ,  Tetsuo Asaba ,  Kenji Makino ,  Hiroshi Yuzurihara ,  Kei Fujita ,  Seiji Kamei ,  Yutaka Akino ,  Yutaka Yuge ,  Mineo Shimotsusa ,  Hideshi Kuwabara

IPC分类号： H01L21/02 ,  H01L21/285 ,  H01L21/8246 ,  H01L27/112 ,  H01L21/265

CPC分类号： H01L28/40 ,  H01L21/28537 ,  H01L27/112 ,  H01L27/11226 ,  Y10S148/14 ,  Y10S438/974

摘要： An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

摘要翻译： 在半导体基体的表面上形成绝缘膜，除去绝缘膜的一部分，使表面出现在外部。 暴露的表面用氢终止，然后施加能量束以选择性地除去终止的氢。 金属被选择性地沉积在以左氢原子终止的部分上。

公开(公告)号：US07247899B2

公开(公告)日：2007-07-24

申请号：US10937382

申请日：2004-09-10

申请人： Hideshi Kuwabara ,  Hiroshi Yuzurihara ,  Takayuki Kimura ,  Mahito Shinohara

发明人： Hideshi Kuwabara ,  Hiroshi Yuzurihara ,  Takayuki Kimura ,  Mahito Shinohara

IPC分类号： H01L31/062 ,  H01L31/113

CPC分类号： H01L27/14687 ,  H01L27/1463 ,  H01L27/14632

摘要： In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled.In a photoelectric conversion device which is constructed in such a manner that on the whole area of a substrate of a specific conduction type there are disposed a buried layer of a conduction type opposite to the conduction type of the substrate and an epitaxial layer of the same conduction type as the conduction type of the substrate and that well of a conduction type opposite to the conduction type of the substrate are present in a part of the epitaxial layer, buried layer for well isolation of the same conduction type as the conduction type of the substrate which have a higher concentration than the epitaxial layer is disposed between the lower part of the well and the buried layer.

摘要翻译： 在具有在阳极的一部分中的掩埋层和具有传感器结构的CCD的诸如CCD的CMOS光电二极管的光电转换装置中，与掩埋层的导电类型相同的导电类型 设置在外围电路中，并且每个阱的电位被独立地控制。 在以这样的方式构成的光电转换装置中，在特定导电类型的基板的整个区域上设置有与基板的导电类型相反的导电类型的掩埋层和与其相同的外延层 导电类型作为衬底的导电类型，并且与衬底的导电类型相反的导电类型的阱存在于外延层的一部分中，用于良好隔离导电类型的导电类型的掩埋层 具有比外延层更高的浓度的衬底设置在阱的下部和掩埋层之间。

公开(公告)号：US20050056905A1

公开(公告)日：2005-03-17

申请号：US10937382

申请日：2004-09-10

申请人： Hideshi Kuwabara ,  Hiroshi Yuzurihara ,  Takayuki Kimura ,  Mahito Shinohara

发明人： Hideshi Kuwabara ,  Hiroshi Yuzurihara ,  Takayuki Kimura ,  Mahito Shinohara

IPC分类号： H01L27/146 ,  H01L29/732 ,  H01L31/10

CPC分类号： H01L27/14687 ,  H01L27/1463 ,  H01L27/14632

摘要： In a photoelectric conversion device having a buried layer in a part of an anode and a cathode of a photodiode, such as a CCD having a sensor structure and a CMOS sensor, well of the same conduction type as the conduction type of the buried layer can be disposed in a peripheral circuit and the potential of each well is independently controlled. In a photoelectric conversion device which is constructed in such a manner that on the whole area of a substrate of a specific conduction type there are disposed a buried layer of a conduction type opposite to the conduction type of the substrate and an epitaxial layer of the same conduction type as the conduction type of the substrate and that well of a conduction type opposite to the conduction type of the substrate are present in a part of the epitaxial layer, buried layer for well isolation of the same conduction type as the conduction type of the substrate which have a higher concentration than the epitaxial layer is disposed between the lower part of the well and the buried layer.

摘要翻译： 在具有在阳极的一部分中的掩埋层和具有传感器结构的CCD的诸如CCD的CMOS光电二极管的光电转换装置中，与掩埋层的导电类型相同的导电类型 设置在外围电路中，并且每个阱的电位被独立地控制。 在以这样的方式构成的光电转换装置中，在特定导电类型的基板的整个区域上设置有与基板的导电类型相反的导电类型的掩埋层和与其相同的外延层 导电类型作为衬底的导电类型，并且与衬底的导电类型相反的导电类型的阱存在于外延层的一部分中，用于良好隔离导电类型的导电类型的掩埋层 具有比外延层更高的浓度的衬底设置在阱的下部和掩埋层之间。

公开(公告)号：US20110027934A1

公开(公告)日：2011-02-03

申请号：US12904269

申请日：2010-10-14

申请人： Hiroaki Naruse ,  Takashi Okagawa ,  Ryuichi Mishima ,  Nobuhiko Sato ,  Hiroshi Yuzurihara

发明人： Hiroaki Naruse ,  Takashi Okagawa ,  Ryuichi Mishima ,  Nobuhiko Sato ,  Hiroshi Yuzurihara

IPC分类号： H01L31/18

CPC分类号： H01L27/14636 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76829 ,  H01L21/76834 ,  H01L23/53238 ,  H01L27/14621 ,  H01L27/14632 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L2924/0002 ,  H01L2924/00

摘要： A photoelectric conversion apparatus includes: a first interlayer insulation film disposed on a semiconductor substrate; a first plug disposed in a first hole in the first interlayer insulation film, and serving to electrically connect between a plurality of active regions disposed in the semiconductor substrate, between gate electrodes of a plurality of MOS transistors, or between the active region and the gate electrode of the MOS transistor, not through the wiring of the wiring layer; and a second plug disposed in a second hole in the first interlayer insulation film, the second plug being electrically connected to the active region, wherein a wiring arranged over the second plug and closest to the second plug is electrically connected to the second plug, and the wiring electrically connected to the second plug forms a portion of dual damascene structure. By such a structure, incidence efficiency of light onto a photoelectric conversion element can be improved.

摘要翻译： 光电转换装置包括：设置在半导体衬底上的第一层间绝缘膜; 第一插头，其设置在第一层间绝缘膜中的第一孔中，并且用于电连接多个MOS晶体管的栅电极之间或者在有源区和栅极之间设置在半导体衬底中的多个有源区之间 MOS晶体管的电极，不通过布线层的布线; 以及设置在所述第一层间绝缘膜中的第二孔中的第二插头，所述第二插头电连接到所述有源区域，其中布置在所述第二插头上并且最靠近所述第二插头的布线电连接到所述第二插头，以及 电连接到第二插头的布线形成双镶嵌结构的一部分。 通过这样的结构，可以提高光到光电转换元件的入射效率。

公开(公告)号：US07541211B2

公开(公告)日：2009-06-02

申请号：US11318930

申请日：2005-12-28

申请人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Shigeru Nishimura ,  Ryuichi Mishima ,  Yasushi Nakata

发明人： Seiichi Tamura ,  Hiroshi Yuzurihara ,  Shigeru Nishimura ,  Ryuichi Mishima ,  Yasushi Nakata

IPC分类号： H01L21/00

CPC分类号： H01L27/14689 ,  H01L27/14603

摘要： It is an object of the present invention to provide a manufacturing method of a photoelectric conversion device in which no plane channeling is produced even if ions are injected at a certain elevation angle into a semiconductor substrate surface made of silicon. A manufacturing method of a photoelectric conversion device including a silicon substrate and a photoelectric conversion element on one principal plane of the silicon substrate, wherein the principal plane has an off-angle forming each angle θ with at least two planes perpendicular to a reference (1 0 0) plane within a range of 3.5°≦θ≦4.5°, and an ion injecting direction for forming an semiconductor region constituting the photoelectric conversion element forms an angle φ to a direction perpendicular to the principal plane within a range of 0°

摘要翻译： 本发明的目的是提供一种光电转换装置的制造方法，其中即使离子以一定的仰角注入到由硅制成的半导体衬底表面中也不产生平面沟道。 一种在硅衬底的一个主平面上包括硅衬底和光电转换元件的光电转换器件的制造方法，其中所述主平面具有偏离角度，每个角度θ与垂直于基准的至少两个平面（1 0°）平面，并且用于形成构成光电转换元件的半导体区域的离子注入方向在0°的范围内与主平面垂直的方向形成角度 °

公开(公告)号：US20080230685A1

公开(公告)日：2008-09-25

申请号：US12111342

申请日：2008-04-29

申请人： Shunsuke Inoue ,  Hiroshi Yuzurihara ,  Tetsuya Itano

发明人： Shunsuke Inoue ,  Hiroshi Yuzurihara ,  Tetsuya Itano

IPC分类号： H01J40/14

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/1462

摘要： A photoelectric conversion device is configured to include a light receiving region, for converting light to signal charges, and transistors. An insulation film is arranged on a surface of the light receiving region and under gate electrodes of the transistors. A first reflection prevention film of a refractive index higher than that of the insulation film is arranged at least above the light receiving region, to sandwich the insulation film between the first reflection prevention film and the light receiving region, and includes a silicon nitride film. An interlayer insulation film is arranged on the first reflection prevention film, and a second reflection prevention film is laminated between the first reflection prevention film and the interlayer insulation film. At least one of side walls of the gate electrodes of the transistors includes the silicon nitride film and a silicon oxide film arranged between the silicon nitride film and the gate electrodes. A transistor having a gate electrode with such a side wall includes a source or drain region of an LDD structure, in which a heavily doped region of the source or drain region of the LDD structure is self aligned to the side wall formed from the silicon nitride film and the silicon oxide film.

摘要翻译： 光电转换装置被配置为包括用于将光转换为信号电荷的光接收区域和晶体管。 绝缘膜布置在光接收区域的表面和晶体管的栅电极下方。 折射率高于绝缘膜的第一防反射膜至少布置在光接收区域的上方，以将绝缘膜夹在第一防反射膜和受光区之间，并且包括氮化硅膜。 在第一反射防止膜上设置层间绝缘膜，在第一防反射膜与层间绝缘膜之间层叠第二防反射膜。 晶体管的栅电极的至少一个侧壁包括氮化硅膜和布置在氮化硅膜和栅电极之间的氧化硅膜。 具有具有这种侧壁的栅电极的晶体管包括LDD结构的源极或漏极区域，其中LDD结构的源极或漏极区域的重掺杂区域与由氮化硅形成的侧壁自对准 膜和氧化硅膜。

公开(公告)号：US5700719A

公开(公告)日：1997-12-23

申请号：US414049

申请日：1995-03-30

申请人： Hiroshi Yuzurihara ,  Shunsuke Inoue ,  Mamoru Miyawaki ,  Shigeyuki Matsumoto

发明人： Hiroshi Yuzurihara ,  Shunsuke Inoue ,  Mamoru Miyawaki ,  Shigeyuki Matsumoto

IPC分类号： H01L23/52 ,  C23C14/56 ,  C23C16/04 ,  H01L21/28 ,  H01L21/3205 ,  H01L21/8238 ,  H01L23/532 ,  H01L29/49 ,  H01L21/443

CPC分类号： H01L29/4933 ,  C23C14/568 ,  C23C16/04 ,  H01L21/823842 ,  H01L21/823871 ,  H01L23/53271 ,  H01L29/4925 ,  H01L2924/0002 ,  Y10S148/02

摘要： A semiconductor device, wherein an electrode wiring, which is in contact with semiconductor layers of mutually different conductive types and serves to connect at least he layers of mutually different conductive types, comprises a first portion principally composed of a component same as the principal component of the semiconductor layers, and a second portion consisting of a metal.

摘要翻译： 一种半导体器件，其中与相互不同的导电类型的半导体层接触并且用于至少连接相互不同的导电类型的层的电极布线包括主要由与主要成分相同的部件组成的第一部分 半导体层和由金属组成的第二部分。