公开(公告)号：US20050109627A1

公开(公告)日：2005-05-26

申请号：US10962236

申请日：2004-10-08

申请人： Zhi-Wen Sun ,  Hooman Hafezi ,  Chunman Yu ,  Aron Rosenfeld ,  Michael Yang

发明人： Zhi-Wen Sun ,  Hooman Hafezi ,  Chunman Yu ,  Aron Rosenfeld ,  Michael Yang

IPC分类号： C25D3/38 ,  C25D5/02 ,  C25D5/10 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768

CPC分类号： H01L21/76843 ,  C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089

摘要： A method for electrolytically repairing a copper seed layer. The method includes positioning the seed layer in fluid communication with a low conductivity seed layer repair solution, wherein the low conductivity seed layer repair solution includes a copper concentration of less than about 20 g/l, a pH of less than about 4, a chlorine ion concentration of between about 20 ppm and about 100 ppm, and an additive organic surfactant configured to suppress a copper deposition rate in the concentration range of 200 ppm to 2000 ppm. The method further includes applying a seed layer repair bias configured to generate a current density of less than about 5 mA/cm2 across the seed layer and cleaning the repaired seed layer in pure water containing less than 1 ppm chloride ions.

摘要翻译： 一种用于电解修复铜籽晶层的方法。 该方法包括将种子层定位成与低电导种子层修复溶液流体连通，其中低电导种子层修复溶液包括小于约20g / l的铜浓度，小于约4的pH，氯 约20ppm至约100ppm的离子浓度，以及配置为在200ppm至2000ppm的浓度范围内抑制铜沉积速率的添加剂有机表面活性剂。 该方法还包括施加晶种层修复偏压，其被配置成跨越种子层产生小于约5mA / cm 2的电流密度，并且在含有小于1ppm的纯水中清洁修复的种子层 氯离子。

公开(公告)号：US20070052104A1

公开(公告)日：2007-03-08

申请号：US11404058

申请日：2006-04-13

申请人： Michael Yang ,  Aron Rosenfeld ,  Hooman Hafezi ,  Zhi-Wen Sun ,  John Dukovic

发明人： Michael Yang ,  Aron Rosenfeld ,  Hooman Hafezi ,  Zhi-Wen Sun ,  John Dukovic

IPC分类号： H01L23/48

CPC分类号： H01L23/53238 ,  H01L21/76855 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.

摘要翻译： 通常，该方法包括在形成在电介质层中的特征上沉积阻挡层和种子层，执行接枝过程，引发铜层，然后通过使用大量铜填充工艺来填充该特征。 根据本文描述的方面形成的铜特征对于形成在半导体衬底上的阻挡层和种子层具有期望的粘合性能，并且证明增强的电迁移和应力迁移导致形成在衬底上的制造器件。

公开(公告)号：US07504335B2

公开(公告)日：2009-03-17

申请号：US11404058

申请日：2006-04-13

申请人： Michael Yang ,  Aron Rosenfeld ,  Hooman Hafezi ,  Zhi-Wen Sun ,  John Dukovic

发明人： Michael Yang ,  Aron Rosenfeld ,  Hooman Hafezi ,  Zhi-Wen Sun ,  John Dukovic

IPC分类号： H01L21/44

CPC分类号： H01L23/53238 ,  H01L21/76855 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

摘要： Generally, the process includes depositing a barrier layer and seed layer on a feature formed in a dielectric layer, performing a grafting process, initiating a copper layer and then filing the feature by use of a bulk copper fill process. Copper features formed according to aspects described herein have desirable adhesion properties to a barrier and seed layers formed on a semiconductor substrate and demonstrate enhanced electromigration and stress migration results in the fabricated devices formed on the substrate.

摘要翻译： 通常，该方法包括在形成在电介质层中的特征上沉积阻挡层和种子层，执行接枝过程，引发铜层，然后通过使用大量铜填充工艺来填充该特征。 根据本文描述的方面形成的铜特征对于形成在半导体衬底上的阻挡层和种子层具有期望的粘附性能，并且证明增强的电迁移和应力迁移导致形成在衬底上的制造器件。

公开(公告)号：US20060283716A1

公开(公告)日：2006-12-21

申请号：US11373635

申请日：2006-03-09

申请人： Hooman Hafezi ,  Aron Rosenfeld ,  Zhi-Wen Sun ,  Hua Chung ,  Lei Zhu

发明人： Hooman Hafezi ,  Aron Rosenfeld ,  Zhi-Wen Sun ,  Hua Chung ,  Lei Zhu

IPC分类号： C25D3/38

CPC分类号： C25D5/34 ,  C25D3/38 ,  C25D5/10 ,  C25D5/18 ,  C25D5/54 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is disclosed for depositing a copper seed layer onto a substrate surface, generally onto a barrier layer that is an alloy of a group VIII metal and a refractory metal. In one aspect, the alloy consists of at least 50% ruthenium and the balance a copper diffusion barrier material. A copper layer is electroplated on the alloy directly. In one aspect, the surface of the barrier layer is conditioned prior to plating to improve adhesion and reduce the critical current density for plating on the barrier layer. The conditioning may include cathodic pre-treatment or a plasma pre-treatment in a hydrogen or hydrogen/helium mixture. In one aspect, the substrate surface is immersed in an acidic plating bath and a nucleation waveform is applied to form a seed layer. In another aspect, the substrate is immersed in a neutral or alkaline copper solution that includes complexed copper ions.

摘要翻译： 公开了一种用于将铜籽晶层沉积到基底表面上的方法，通常在作为VIII族金属和难熔金属的合金的阻挡层上。 一方面，合金由至少50％的钌组成，余量为铜扩散阻挡材料。 铜层直接电镀在合金上。 在一个方面，阻隔层的表面在镀覆之前被调节以提高粘附性并降低在阻挡层上电镀的临界电流密度。 调理可以包括阴极预处理或氢或氢/氦混合物中的等离子体预处理。 在一个方面，将基材表面浸入酸性电镀浴中并施加成核波形以形成种子层。 另一方面，将衬底浸入包括络合的铜离子的中性或碱性铜溶液中。

公开(公告)号：US20110259750A1

公开(公告)日：2011-10-27

申请号：US13150850

申请日：2011-06-01

申请人： Hooman Hafezi ,  Aron Rosenfeld ,  Zhi-Wen Sun ,  Hua Chung ,  Lei Zhu

发明人： Hooman Hafezi ,  Aron Rosenfeld ,  Zhi-Wen Sun ,  Hua Chung ,  Lei Zhu

IPC分类号： C25D3/38 ,  C25D5/02 ,  C25D5/34

CPC分类号： C25D5/34 ,  C25D3/38 ,  C25D5/10 ,  C25D5/18 ,  C25D5/54 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76861 ,  H01L21/76862 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method is disclosed for depositing a copper seed layer onto a substrate surface. In one embodiment, the method includes providing a substrate having a barrier layer disposed on a substrate surface, wherein the barrier layer has a barrier surface comprising a material selected from the group consisting of cobalt, ruthenium, tungsten, titanium, and a compound of two or more thereof, and exposing the substrate to a non-complexed, acid electrochemical plating solution with a plating bias applied across the substrate surface to deposit a copper-containing seed layer directly on the barrier surface without intervening layer disposed therebetween.

摘要翻译： 公开了一种将铜籽晶层沉积在基底表面上的方法。 在一个实施例中，该方法包括提供具有设置在衬底表面上的阻挡层的衬底，其中阻挡层具有包含选自钴，钌，钨，钛和两种化合物的材料的阻挡表面 或更多，并且将衬底暴露于非复合的酸性电化学电镀溶液，其中跨越衬底表面施加电镀偏压，以将含铜种子层直接沉积在阻挡表面上，而不设置介于其间的中间层。

公开(公告)号：US06773569B2

公开(公告)日：2004-08-10

申请号：US10142719

申请日：2002-05-08

申请人： Zhi-Wen Sun ,  Nicolay Kovarsky ,  Chunman Yu ,  Girish Dixit

发明人： Zhi-Wen Sun ,  Nicolay Kovarsky ,  Chunman Yu ,  Girish Dixit

IPC分类号： C25D2112

CPC分类号： C25D21/12

摘要： A cyclic voltammetric method for measuring the concentration of additives in a plating solution. The method generally includes providing the plating solution, having an unknown concentration of an additive to be measured therein and cycling the potential of an inert working electrode through a series of measurement steps. The series of measurement steps includes a metal stripping step including pulsing from an open circuit potential to a metal stripping potential between about 0.2 V and about 0.8 V, and holding the metal stripping potential until a corresponding current nears 0 mA/cm. The series of measurement steps further includes a cleaning step including pulsing from the metal stripping potential to a cleaning potential between about 1.2 V and about 1.6 V, and holding the cleaning potential for about 2 seconds to about 10 seconds. The series of measurement steps then includes a pre-plating step including pulsing from the cleaning potential to a pre-plating potential between about −0.2 V and about −0.5 V, and holding the pre-plating potential for about 2 seconds to about 10 seconds. The series of measurement steps additionally includes an equilibration step including pulsing from the pre-plating potential to the open circuit potential, and holding the open circuit potential for a predetermined time period, and a metal deposition step including scanning from the open circuit potential of the equilibration step to an additive sensitive potential, holding the additive sensitive potential for about 1 second to about 30 seconds, and scanning back to the open circuit potential. The method further includes plotting a profile of a deposition current resulting from the metal deposition potential as a function of time and integrating the deposition current to determine the concentration of the additive to be measured.

摘要翻译： 一种用于测量电镀溶液中添加剂浓度的循环伏安法。 该方法通常包括提供具有未测量的待测量添加剂浓度的电镀溶液，并通过一系列测量步骤循环惰性工作电极的电位。 一系列测量步骤包括金属剥离步骤，其包括从约0.2V至约0.8V之间的开路电位脉冲至金属剥离电势，并保持金属剥离电位，直到相应的电流接近0mA / cm。 一系列测量步骤还包括清洁步骤，其包括从金属剥离电位脉冲至约1.2V至约1.6V之间的清洁电势，并将清洁电位保持约2秒至约10秒。 所述一系列测量步骤包括预镀步骤，包括从清洁电势脉冲至约-0.2V至约-0.5V之间的预镀电势，并将预镀电位保持约2秒至约10秒 。 一系列测量步骤还包括平衡步骤，包括从预镀电位脉冲到开路电位，并将开路电位保持预定时间段，以及金属沉积步骤，包括从开路电位扫描 平衡步骤到加性敏感电位，保持添加剂敏感电位约1秒至约30秒，并扫描回开路电位。 该方法还包括绘制由金属沉积电势产生的沉积电流的轮廓作为时间的函数，并且积分沉积电流以确定待测量的添加剂的浓度。

公开(公告)号：US20070125657A1

公开(公告)日：2007-06-07

申请号：US11255368

申请日：2005-10-21

申请人： Zhi-Wen Sun ,  Renren He ,  Nicolay Kovarsky ,  John Dukovic ,  Aron Rosenfeld ,  Lei Zhu

发明人： Zhi-Wen Sun ,  Renren He ,  Nicolay Kovarsky ,  John Dukovic ,  Aron Rosenfeld ,  Lei Zhu

IPC分类号： C25D5/34 ,  C25D3/38

CPC分类号： C25D3/38 ,  C25D5/10 ,  C25D5/34 ,  C25D5/54 ,  H01L21/2885 ,  H01L21/76846 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention teaches a method for depositing a copper seed layer onto a substrate surface, generally onto a barrier layer. The barrier layer may include a refractory metal and/or a group 8, 9 or 10 metal. The method includes cathodically pre-treating the substrate in an acid-containing solution. The substrate is then placed into a copper solution (pH≧7.0) that includes complexed copper ions and a current or bias is applied across the substrate surface. The complexed copper ions are reduced to deposit a copper seed layer onto the barrier layer. In one aspect, a complex alkaline bath is then used to electrochemically plate a gapfill layer on the substrate surface, followed by overfill in the same bath. In another aspect, an acidic bath ECP gapfill process and overfill process follow the alkaline seed layer process.

摘要翻译： 本发明教导了一种将铜籽晶层沉积到基底表面上的方法，通常在阻挡层上。 阻挡层可以包括难熔金属和/或第8,9或10族金属。 该方法包括在含酸溶液中阴极预处理底物。 然后将衬底放入包括络合的铜离子的铜溶液（pH> = 7.0）中，并且在衬底表面上施加电流或偏压。 络合的铜离子被还原以将铜籽晶层沉积在阻挡层上。 在一个方面，然后使用复杂的碱性浴来电化学地在衬底表面上印刷间隙填充层，然后在相同的浴中过量填充。 另一方面，酸性浴ECP间隙填充过程和过度填充过程遵循碱性种子层过程。

公开(公告)号：US20050006245A1

公开(公告)日：2005-01-13

申请号：US10616097

申请日：2003-07-08

申请人： Zhi-Wen Sun ,  Renren He ,  You Wang ,  Michael Yang

发明人： Zhi-Wen Sun ,  Renren He ,  You Wang ,  Michael Yang

IPC分类号： C25D3/38 ,  C25D5/10 ,  C25D7/12 ,  H01L21/288 ,  H01L21/768 ,  C25D5/02

CPC分类号： H01L21/76864 ,  C25D3/38 ,  C25D5/10 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877

摘要： Embodiments of the invention teach a method for depositing a copper seed layer to a substrate surface, generally to a barrier layer. The method includes placing the substrate surface into a copper solution, wherein the copper solution includes complexed copper ions. A current or bias is applied across the substrate surface and the complexed copper ions are reduced to deposit the copper seed layer onto the barrier layer.

摘要翻译： 本发明的实施方案教导了一种将铜籽晶层沉积到基底表面的方法，通常为阻挡层。 该方法包括将基板表面放置在铜溶液中，其中铜溶液包括络合的铜离子。 在衬底表面上施加电流或偏压，还原络合的铜离子以将铜籽晶层沉积到阻挡层上。

公开(公告)号：US08759231B2

公开(公告)日：2014-06-24

申请号：US13100692

申请日：2011-05-04

申请人： Zhi-Wen Sun ,  Sagar Vijay

发明人： Zhi-Wen Sun ,  Sagar Vijay

IPC分类号： H01L21/302

CPC分类号： H01L31/02366 ,  C23F1/16 ,  H01L31/0236 ,  H01L31/02363 ,  Y02E10/50

摘要： The present disclosure includes a texture formulation that includes an aliphatic diol, an alkaline compound and water which provides a consistent textured region across a silicon surface suitable for solar cell applications. Processes for texturing a crystalline silicon substrate using these formulations are also described.

摘要翻译： 本公开内容包括包含脂族二醇，碱性化合物和水的纹理制剂，其在适于太阳能电池应用的硅表面上提供一致的纹理区域。 还描述了使用这些制剂对晶体硅衬底进行纹理化的工艺。

公开(公告)号：US20130319847A1

公开(公告)日：2013-12-05

申请号：US13489079

申请日：2012-06-05

申请人： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

发明人： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

IPC分类号： C23C14/34 ,  C23C14/14 ,  C23C14/08

CPC分类号： C03C17/36 ,  C03C17/3644 ,  C03C17/366 ,  C03C17/3681 ,  C23C14/086 ,  C23C14/185 ,  C23C14/562

摘要： A method for making low emissivity panels, comprising forming highly smooth layers of silver on highly smooth layers of base or seed films. The highly smooth layers can be achieved by collimated sputtering, lowering the angular distribution of the sputtered particles when reaching the substrate.

摘要翻译： 一种用于制造低辐射面板的方法，包括在基底或种子膜的高度光滑的层上形成高度光滑的银层。 高度平滑的层可以通过准直的溅射来实现，当到达衬底时降低溅射颗粒的角分布。