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24 条记录 (耗时 0.021 秒)

    Multistep remote plasma clean process
    1.
    发明授权
    Multistep remote plasma clean process 失效
    多步远程等离子体清洁过程

    公开(公告)号：US07159597B2

    公开(公告)日：2007-01-09

    申请号：US10153315

    申请日：2002-05-21

    申请人： Zhong Qiang Hua ,  Zhengquan Tan ,  Zhuang Li ,  Kent Rossman

    发明人： Zhong Qiang Hua ,  Zhengquan Tan ,  Zhuang Li ,  Kent Rossman

    IPC分类号： B08B7/04

    CPC分类号： B08B7/0035 ,  C23C16/4405 ,  Y10S438/905

    摘要： A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate out of the chamber; flowing a first gas into the substrate processing chamber and forming a plasma within the chamber from the first gas in order to heat the chamber; and thereafter, extinguishing the plasma, flowing an etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to etch the unwanted deposition build-up.

    摘要翻译： 一种在将材料层沉积在设置在腔室中的衬底上之后，从衬底处理室的一个或多个内表面去除不想要的沉积积累的过程。 在一个实施例中，该方法包括将衬底转移出腔室; 将第一气体流入基板处理室，并在第一气体内在室内形成等离子体，以便加热室; 然后熄灭等离子体，将蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应物质并将反应物质输送到衬底处理室中以蚀刻不需要的沉积物积聚。

    Trench fill with HDP-CVD process including coupled high power density plasma deposition
    2.
    发明授权
    Trench fill with HDP-CVD process including coupled high power density plasma deposition 失效

    公开(公告)号：US06559026B1

    公开(公告)日：2003-05-06

    申请号：US09579822

    申请日：2000-05-25

    申请人： Kent Rossman ,  Zhuang Li ,  Young Lee

    发明人： Kent Rossman ,  Zhuang Li ,  Young Lee

    IPC分类号： H01L2176

    CPC分类号： H01J37/321 ,  C23C16/045 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

    摘要： A trench-fill material is deposited to fill a trench in a substrate disposed in a process chamber. An inert gas is introduced into the process chamber and a plasma is formed to heat the substrate to a preset temperature, which is typically the temperature at which deposition of the trench-fill material is to take place. The plasma is terminated upon reaching the preset temperature for the substrate. A process gas is then flowed into the process chamber without plasma excitation until the process gas flow and distribution achieve a generally steady state in the process chamber. A plasma is then formed to deposit the trench-fill material on the surface of the substrate and fill the trench. By establishing generally steady state conditions in the chamber prior to deposition, transient effects are reduced and more uniform deposition of the trench-fill material is obtained. The step of forming the plasma typically includes coupling source plasma energy into the process chamber at a total power density of at least about 15 Watts/cm2. The energy is inductively coupled into the process chamber by coupling a top coil with a top portion of the process chamber above the surface of the substrate and coupling a side coil with a side portion of the process chamber generally surrounding the side edge of the substrate. The top coil is powered at a top RF power level to produce a top power density and the side coil is-powered at a side RF power level to produce a side power density. The total RF power density is equal to the sum of the top and side power densities. The top power density and the side power density desirably have a ratio of at least about 1.5. The high source plasma power density generates a high ion density plasma and produces a more directional deposition, and a higher top power density relative to the side power density produces a more uniform plasma over the substrate, resulting in improved trench fill, particularly for aggressive trenches having aspect ratios of about 3:1 to 4:1. The process gas typically includes silicon, oxygen, and an inert component having a concentration of less than about 40%, by volume. In specific embodiments, the concentration of the inert component is equal to about 0%.

    Staggered in-situ deposition and etching of a dielectric layer for HDP CVD
    5.
    发明授权
    Staggered in-situ deposition and etching of a dielectric layer for HDP CVD 失效
    用于HDP CVD的电介质层的交错原位沉积和蚀刻

    公开(公告)号：US06821577B2

    公开(公告)日：2004-11-23

    申请号：US10234988

    申请日：2002-09-04

    申请人： Kent Rossman

    发明人： Kent Rossman

    IPC分类号： H05H124

    CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/402 ,  C23C16/4482 ,  C23C16/45561 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32302 ,  H01J37/32449 ,  H01J37/32862 ,  H01J37/3299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/76837

    摘要： A method for depositing a conformal dielectric layer employing a dep-etch technique features selectively decreasing the deposition gas present in a process chamber where a substrate to be covered by the conformal dielectric layer is disposed. By selectively decreasing the deposition gas present in the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

    摘要翻译： 使用去蚀刻技术沉积共形介电层的方法特征在于选择性地降低存在于处理室中的沉积气体，其中设置由保形介电层覆盖的衬底。 通过选择性地减少存在于处理室中的沉积气体，处理室中的形成等离子体的溅射气体的浓度增加。 沉积气体的流动优选地周期性地终止，以提供接近100％的溅射气体浓度。 以这种方式，可以大大增加具有足够的间隙填充特性的保形介电层的蚀刻速率，同时允许其沉积速率的增加。

    Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes
    6.
    发明授权
    Method for using an in situ particle sensor for monitoring particle performance in plasma deposition processes 失效
    使用原位粒子传感器监测等离子体沉积过程中的粒子性能的方法

    公开(公告)号：US06696362B2

    公开(公告)日：2004-02-24

    申请号：US10122058

    申请日：2002-04-12

    申请人： Kent Rossman ,  Leonard Jay Olmer ,  Phillip Nguyen

    发明人： Kent Rossman ,  Leonard Jay Olmer ,  Phillip Nguyen

    IPC分类号： H01L2131

    CPC分类号： C23C16/4404 ,  C23C30/00 ,  H01J37/32477 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76801

    摘要： Methods are provided for identifying root causes of particle issues and for developing particle-robust process recipes in plasma deposition processes. The presence of in situ particles within the substrate processing system is detected over a period of time that spans multiple distinct processing steps in the recipe. The time dependence of in situ particle levels is determined from these results. Then, the processing steps are correlated with the time dependence to identify relative particle levels with the processing steps. This information provides a direct indication of which steps result in the production of particle contaminants so that those steps may be targeted for modification in the development of particle recipes.

    摘要翻译： 提供了用于确定颗粒问题的根本原因并开发等离子体沉积工艺中的粒子稳定工艺配方的方法。 在一段时间内检测基底处理系统内原位颗粒的存在，跨越食谱中的多个不同的处理步骤。 从这些结果确定原位颗粒水平的时间依赖性。 然后，处理步骤与时间依赖相关，以利用处理步骤来识别相对颗粒水平。 该信息提供了哪些步骤导致颗粒污染物的产生的直接指示，使得可以将这些步骤用于改进颗粒配方的开发。

    Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD
    7.
    发明授权
    Staggered in-situ deposition and etching of a dielectric layer for HDP-CVD 失效
    用于HDP-CVD的电介质层的交错原位沉积和蚀刻

    公开(公告)号：US07455893B2

    公开(公告)日：2008-11-25

    申请号：US11580271

    申请日：2006-10-11

    申请人： Kent Rossman

    发明人： Kent Rossman

    IPC分类号： H05H1/24

    CPC分类号： C23C16/45523 ,  C23C16/045 ,  C23C16/402 ,  C23C16/4482 ,  C23C16/45561 ,  C23C16/507 ,  H01J37/321 ,  H01J37/32302 ,  H01J37/32449 ,  H01J37/32862 ,  H01J37/3299 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31051 ,  H01L21/31608 ,  H01L21/31612 ,  H01L21/76837

    摘要： A method and apparatus for depositing a conformal dielectric layer employing a dep-etch technique features selectively reducing the flow of deposition gases into a process chamber where a substrate having a stepped surface to be covered by the conformal dielectric layer is disposed. By selectively reducing the flow of deposition gases into the process chamber, the concentration of a sputtering gas, from which a plasma is formed, in the process chamber is increased without increasing the pressure therein. It is preferred that the flow of deposition gases be periodically terminated so as to provide a sputtering gas concentration approaching 100%. In this fashion, the etch rate of a conformal dielectric layer having adequate gap-filling characteristics may be greatly increased, while allowing an increase in the deposition rate of the same.

    摘要翻译： 使用去蚀刻技术沉积保形介电层的方法和装置特征在于选择性地减少沉积气体流入处理室，其中设置具有被保形电介质层覆盖的台阶表面的基板。 通过选择性地减少沉积气体进入处理室的流量，在处理室中从其中形成等离子体的溅射气体的浓度增加而不增加其中的压力。 沉积气体的流动优选地周期性地终止，以提供接近100％的溅射气体浓度。 以这种方式，可以大大增加具有足够的间隙填充特性的保形介电层的蚀刻速率，同时允许其沉积速率的增加。

    Controlled method of silicon-rich oxide deposition using HDP-CVD
    8.
    发明授权
    Controlled method of silicon-rich oxide deposition using HDP-CVD 失效
    使用HDP-CVD的富硅氧化物沉积的控制方法

    公开(公告)号：US06458722B1

    公开(公告)日：2002-10-01

    申请号：US09697380

    申请日：2000-10-25

    申请人： Bikram Kapoor ,  Kent Rossman

    发明人： Bikram Kapoor ,  Kent Rossman

    IPC分类号： H01L2131

    CPC分类号： C23C16/401 ,  C23C16/0209 ,  C23C16/402

    摘要： A method and system for forming a layer on a substrate in a process chamber are provided. Deposition gases are provided to the process chamber and permitted to mix in the desired relative concentrations prior to the deposition step, resulting in improved composition uniformity of the layer. This may be accomplished by generating a heating plasma from a first gaseous mixture. The plasma is then terminated and a second gaseous mixture is provided to the process chamber such that the second gaseous mixture is substantially uniformly mixed. A second plasma is then generated from the second gaseous mixture to deposit the layer on the substrate.

    摘要翻译： 提供了一种用于在处理室中在基板上形成层的方法和系统。 将沉积气体提供给处理室，并允许在沉积步骤之前以期望的相对浓度混合，从而改善层的组成均匀性。 这可以通过从第一气体混合物产生加热等离子体来实现。 然后等离子体被终止，并且向处理室提供第二气体混合物，使得第二气体混合物基本均匀地混合。 然后从第二气体混合物产生第二等离子体以将该层沉积在衬底上。

    Method for reducing the intrinsic stress of high density plasma films
    9.
    发明授权
    Method for reducing the intrinsic stress of high density plasma films 失效
    降低高密度等离子体膜的固有应力的方法

    公开(公告)号：US07294205B1

    公开(公告)日：2007-11-13

    申请号：US09362504

    申请日：1999-07-27

    申请人： K. V. Ravi ,  Kent Rossman ,  Turgut Sahin ,  Pravin Narwankar

    发明人： K. V. Ravi ,  Kent Rossman ,  Turgut Sahin ,  Pravin Narwankar

    IPC分类号： C23C16/50 ,  C23C16/503 ,  C23C16/515 ,  C23C16/40 ,  C23C16/24 ,  H01L21/306 ,  C23F1/00

    CPC分类号： H01L21/02164 ,  C23C16/402 ,  C23C16/517 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/31612

    摘要： A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.

    摘要翻译： 通过延迟或中断电容耦合RF能量的应用，使用HDP-CVD系统在衬底上形成一层减小的应力。 通过将工艺气体引入HDP系统室并通过将RF功率施加到感应线圈从工艺气体形成等离子体而形成该层。 在选定的时间段之后，通过维持电感耦合等离子体并且将等离子体偏压到衬底来沉积膜的第二层，以增强等离子体的溅射效应。 在优选实施例中，沉积膜是氧化硅膜，并且通过将来自RF发生器的电容耦合的RF功率施加到顶板电极和晶片支撑电极来执行偏置。