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23 条记录 (耗时 0.019 秒)

    Trench fill with HDP-CVD process including coupled high power density plasma deposition
    3.
    发明授权
    Trench fill with HDP-CVD process including coupled high power density plasma deposition 失效

    公开(公告)号：US06559026B1

    公开(公告)日：2003-05-06

    申请号：US09579822

    申请日：2000-05-25

    申请人： Kent Rossman ,  Zhuang Li ,  Young Lee

    发明人： Kent Rossman ,  Zhuang Li ,  Young Lee

    IPC分类号： H01L2176

    CPC分类号： H01J37/321 ,  C23C16/045 ,  C23C16/402 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/76229 ,  H01L21/76837

    摘要： A trench-fill material is deposited to fill a trench in a substrate disposed in a process chamber. An inert gas is introduced into the process chamber and a plasma is formed to heat the substrate to a preset temperature, which is typically the temperature at which deposition of the trench-fill material is to take place. The plasma is terminated upon reaching the preset temperature for the substrate. A process gas is then flowed into the process chamber without plasma excitation until the process gas flow and distribution achieve a generally steady state in the process chamber. A plasma is then formed to deposit the trench-fill material on the surface of the substrate and fill the trench. By establishing generally steady state conditions in the chamber prior to deposition, transient effects are reduced and more uniform deposition of the trench-fill material is obtained. The step of forming the plasma typically includes coupling source plasma energy into the process chamber at a total power density of at least about 15 Watts/cm2. The energy is inductively coupled into the process chamber by coupling a top coil with a top portion of the process chamber above the surface of the substrate and coupling a side coil with a side portion of the process chamber generally surrounding the side edge of the substrate. The top coil is powered at a top RF power level to produce a top power density and the side coil is-powered at a side RF power level to produce a side power density. The total RF power density is equal to the sum of the top and side power densities. The top power density and the side power density desirably have a ratio of at least about 1.5. The high source plasma power density generates a high ion density plasma and produces a more directional deposition, and a higher top power density relative to the side power density produces a more uniform plasma over the substrate, resulting in improved trench fill, particularly for aggressive trenches having aspect ratios of about 3:1 to 4:1. The process gas typically includes silicon, oxygen, and an inert component having a concentration of less than about 40%, by volume. In specific embodiments, the concentration of the inert component is equal to about 0%.

    Multistep remote plasma clean process
    4.
    发明授权
    Multistep remote plasma clean process 失效
    多步远程等离子体清洁过程

    公开(公告)号：US07159597B2

    公开(公告)日：2007-01-09

    申请号：US10153315

    申请日：2002-05-21

    申请人： Zhong Qiang Hua ,  Zhengquan Tan ,  Zhuang Li ,  Kent Rossman

    发明人： Zhong Qiang Hua ,  Zhengquan Tan ,  Zhuang Li ,  Kent Rossman

    IPC分类号： B08B7/04

    CPC分类号： B08B7/0035 ,  C23C16/4405 ,  Y10S438/905

    摘要： A process for removing unwanted deposition build-up from one or more interior surfaces of a substrate processing chamber after depositing a layer of material over a substrate disposed in the chamber. In one embodiment the process comprises transferring the substrate out of the chamber; flowing a first gas into the substrate processing chamber and forming a plasma within the chamber from the first gas in order to heat the chamber; and thereafter, extinguishing the plasma, flowing an etchant gas into a remote plasma source, forming reactive species from the etchant gas and transporting the reactive species into the substrate processing chamber to etch the unwanted deposition build-up.

    摘要翻译： 一种在将材料层沉积在设置在腔室中的衬底上之后，从衬底处理室的一个或多个内表面去除不想要的沉积积累的过程。 在一个实施例中，该方法包括将衬底转移出腔室; 将第一气体流入基板处理室，并在第一气体内在室内形成等离子体，以便加热室; 然后熄灭等离子体，将蚀刻剂气体流入远程等离子体源，从蚀刻剂气体形成反应物质并将反应物质输送到衬底处理室中以蚀刻不需要的沉积物积聚。

    STABILIZING AN OPENED CARBON HARDMASK
    5.
    发明申请
    STABILIZING AN OPENED CARBON HARDMASK 审中-公开
    稳定开放的碳化钨

    公开(公告)号：US20080102553A1

    公开(公告)日：2008-05-01

    申请号：US11555160

    申请日：2006-10-31

    申请人： TAEHO SHIN ,  Ajey M. Joshi ,  Zhuang Li ,  Wei-Te Wu ,  Jin Chul Son ,  Jong Hun Choi

    发明人： TAEHO SHIN ,  Ajey M. Joshi ,  Zhuang Li ,  Wei-Te Wu ,  Jin Chul Son ,  Jong Hun Choi

    IPC分类号： H01L21/00

    CPC分类号： H01L21/67069 ,  H01L21/0332 ,  H01L21/31122 ,  H01L21/31144

    摘要： A process for passivating a carbon-based hard mask, for example, of hydrogenated amorphous carbon, overlying an oxide dielectric which is to be later etched according to the pattern of the hard mask. After the hard mask is photo lithographically etched, it is exposed to a plasma of a hydrogen-containing reducing gas, preferably hydrogen gas, and a fluorocarbon gas, preferably trifluoromethane. The substrate can then be exposed to air without the moisture condensing in the etched apertures of the hard mask.

    摘要翻译： 钝化覆盖氧化物电介质的碳氢化硬掩模（例如氢化无定形碳）的方法，该氧化物电介质将根据硬掩模的图案而被蚀刻。 在硬掩模被光刻蚀刻之后，将其暴露于含氢还原气体，优选氢气和碳氟化合物气体，优选三氟甲烷的等离子体。 然后可以将衬底暴露于空气，而不会在硬掩模的蚀刻孔中凝结水分。