公开(公告)号：US20130312663A1

公开(公告)日：2013-11-28

申请号：US13477928

申请日：2012-05-22

Applicant: Mukul Khosla ,  Mike Grimes ,  Peter Krotov ,  Genny Epshteyn

Inventor： Mukul Khosla ,  Mike Grimes ,  Peter Krotov ,  Genny Epshteyn

IPC: F17D3/00 ,  C23C16/52

CPC classification number: C23C16/52 ,  C23C16/4485 ,  C23C16/45561 ,  Y10T137/0379 ,  Y10T137/6416

Abstract: A vapor delivery apparatus for providing a precursor vapor for a vapor deposition process includes a precursor container for holding a liquid or solid precursor. A first temperature control assembly maintains the precursor container at a first temperature to generate a vapor precursor from the liquid or solid precursor. An isolation valve is coupled to the precursor container, and a specific quantity of the vapor precursor is accumulated in an expansion volume. A fill valve, which is coupled to each of the isolation valve and the expansion volume, controls the flow of the vapor precursor from the precursor container into the expansion volume. A second temperature control assembly maintains the isolation valve at a second temperature greater than the first temperature.

Abstract translation: 用于提供用于气相沉积工艺的前体蒸气的蒸气输送装置包括用于保持液体或固体前体的前体容器。 第一温度控制组件将前体容器保持在第一温度以从液体或固体前体产生蒸气前体。 隔离阀联接到前体容器，并且特定量的蒸气前体在膨胀体积中积聚。 连接到每个隔离阀和膨胀体积的填充阀控制蒸气前体从前体容器进入膨胀体积的流动。 第二温度控制组件将隔离阀保持在大于第一温度的第二温度。

公开(公告)号：US08501277B2

公开(公告)日：2013-08-06

申请号：US12151323

申请日：2008-05-05

Applicant: Boris Kobrin ,  Dangaria Nikunji Hirji ,  Romuald Nowak ,  Michael T. Grimes

Inventor： Boris Kobrin ,  Dangaria Nikunji Hirji ,  Romuald Nowak ,  Michael T. Grimes

IPC: C23C16/00

CPC classification number: H01L23/564 ,  B81B3/0075 ,  B81B2207/115 ,  B81C1/00206 ,  B81C1/0038 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/3127 ,  H01L21/3141 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/3162 ,  H01L23/29 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A method of providing a durable protective coating structure which comprises at least three layers, and which is stable at temperatures in excess of 400° C., where the method includes vapor depositing a first layer deposited on a substrate, wherein the first layer is a metal oxide adhesion layer selected from the group consisting of an oxide of a Group IIIA metal element, a Group IVB metal element, a Group VB metal element, and combinations thereof; vapor depositing a second layer upon said first layer, wherein said second layer includes a silicon-containing layer selected from the group consisting of silicon oxide, silicon nitride, and silicon oxynitride; and vapor depositing a third layer upon said second layer, wherein said third layer is a functional organic-comprising layer. Numerous articles useful in electronics, MEMS, nanoimprinting lithography, and biotechnology applications can be fabricated using the method.

Abstract translation: 一种提供耐久保护涂层结构的方法，其包括至少三层，并且在超过400℃的温度下是稳定的，其中所述方法包括气相沉积沉积在基底上的第一层，其中所述第一层为 金属氧化物粘附层，其选自由IIIA族金属元素的氧化物，IVB族金属元素，VB族金属元素及其组合组成的组中; 在所述第一层上气相沉积第二层，其中所述第二层包括选自氧化硅，氮化硅和氮氧化硅的含硅层; 并在所述第二层上气相沉积第三层，其中所述第三层是含功能的有机物层。 可以使用该方法制造在电子，MEMS，纳米压印光刻和生物技术应用中有用的许多制品。

公开(公告)号：US08236379B2

公开(公告)日：2012-08-07

申请号：US11904522

申请日：2007-09-26

Applicant: Boris Kobrin ,  Jeffrey D. Chin ,  Benigno A. Janeiro ,  Romuald Nowak

Inventor： Boris Kobrin ,  Jeffrey D. Chin ,  Benigno A. Janeiro ,  Romuald Nowak

IPC: B05D1/12 ,  C23C16/00 ,  C23C16/30 ,  C23C16/40

CPC classification number: B05D5/083 ,  B05D1/34 ,  B05D1/60 ,  B05D5/08 ,  C23C16/401 ,  C23C16/403 ,  Y10T428/256

Abstract: The present invention is related to a chemical vapor deposition method of depositing layers of materials to provide super-hydrophilic surface properties, or super-hydrophobic surface properties, or combinations of such properties at various locations on a given surface. The invention also relates to electronic applications which make use of super-hydrophobic surface properties, and to biological applications which make use of super-hydrophilic surface properties.

Abstract translation: 本发明涉及沉积材料层以提供超亲水表面性质或超疏水性表面性质的化学气相沉积方法，或者给定表面上各种位置处的这些性质的组合。 本发明还涉及利用超疏水表面性质的电子应用以及利用超亲水表面性质的生物应用。

公开(公告)号：US07638167B2

公开(公告)日：2009-12-29

申请号：US10862047

申请日：2004-06-04

Applicant: Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

Inventor： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

IPC: C23C16/00 ,  C23C14/10

CPC classification number: B82Y30/00 ,  C23C16/0227 ,  C23C16/402

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

Abstract translation: 我们已经开发了一种改进的气相沉积方法和装置，用于在基底上施加膜/涂层。 该方法提供在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。 除了控制添加到处理室中的反应物的量之外，本发明需要精确控制处理室中的总压力（其小于大气压），存在于处理室中的每种气态组分的部分蒸气压 处理室，衬底温度以及典型地在所述处理室内的主处理表面的温度。 对这种变量组合的控制决定了使用该方法形成的膜/涂层或多层膜/涂层的许多特性。 通过改变这些工艺参数，可以控制所生产的膜/涂层的粗糙度和厚度。

公开(公告)号：US20060088666A1

公开(公告)日：2006-04-27

申请号：US11295129

申请日：2005-12-05

Applicant: Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak

Inventor： Boris Kobrin ,  Jeffrey Chinn ,  Romuald Nowak

IPC: C23C16/00

CPC classification number: B05D1/60 ,  B05D3/064 ,  B82Y30/00

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biofunctional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, a siloxane substrate surface is treated using a combination of ozone and UV radiation to render the siloxane surface more hydrophilic, and subsequently a functional coating is applied in-situ over the treated surface of the siloxane substrate.

Abstract translation: 我们已经开发了一种改进的气相沉积方法和装置，用于在各种基底上施加层和涂层。 该方法和装置可用于制造生物功能装置，生物MEMS装置以及制造用于生物应用的微流体装置。 在一个重要的实施方案中，使用臭氧和UV辐射的组合处理硅氧烷底物表面，以使硅氧烷表面更亲水，随后在硅氧烷底物的处理表面上原位施加功能性涂层。

公开(公告)号：US08178162B2

公开(公告)日：2012-05-15

申请号：US12592183

申请日：2009-11-19

Applicant: Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

Inventor： Boris Kobrin ,  Romuald Nowak ,  Richard C. Yi ,  Jeffrey D. Chinn

IPC: C23C16/00

CPC classification number: B82Y30/00 ,  C23C16/0227 ,  C23C16/402

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of films/coatings on substrates. The method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. In addition to the control over the amount of reactants added to the process chamber, the present invention requires precise control over the total pressure (which is less than atmospheric pressure) in the process chamber, the partial vapor pressure of each vaporous component present in the process chamber, the substrate temperature, and typically the temperature of a major processing surface within said process chamber. Control over this combination of variables determines a number of the characteristics of a film/coating or multi-layered film/coating formed using the method. By varying these process parameters, the roughness and the thickness of the films/coatings produced can be controlled.

Abstract translation: 我们已经开发了一种改进的气相沉积方法和装置，用于在基底上施加膜/涂层。 该方法提供在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。 除了控制添加到处理室中的反应物的量之外，本发明需要精确控制处理室中的总压力（其小于大气压），存在于处理室中的每种气态组分的部分蒸气压 处理室，衬底温度以及典型地在所述处理室内的主处理表面的温度。 对这种变量组合的控制决定了使用该方法形成的膜/涂层或多层膜/涂层的许多特性。 通过改变这些工艺参数，可以控制所生产的膜/涂层的粗糙度和厚度。

公开(公告)号：US07695775B2

公开(公告)日：2010-04-13

申请号：US11295129

申请日：2005-12-05

Applicant: Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak

Inventor： Boris Kobrin ,  Jeffrey D. Chinn ,  Romuald Nowak

IPC: H05H1/00 ,  B05D3/04 ,  B05D3/10 ,  B05D3/06

CPC classification number: B05D1/60 ,  B05D3/064 ,  B82Y30/00

Abstract: We have developed an improved vapor-phase deposition method and apparatus for the application of layers and coatings on various substrates. The method and apparatus are useful in the fabrication of biofunctional devices, Bio-MEMS devices, and in the fabrication of microfluidic devices for biological applications. In one important embodiment, a siloxane substrate surface is treated using a combination of ozone and UV radiation to render the siloxane surface more hydrophilic, and subsequently a functional coating is applied in-situ over the treated surface of the siloxane substrate.

Abstract translation: 我们已经开发了一种改进的气相沉积方法和装置，用于在各种基底上施加层和涂层。 该方法和装置可用于制造生物功能装置，生物MEMS装置以及制造用于生物应用的微流体装置。 在一个重要的实施方案中，使用臭氧和UV辐射的组合处理硅氧烷底物表面，以使硅氧烷表面更亲水，随后在硅氧烷底物的处理表面上原位施加功能性涂层。

公开(公告)号：US20100068489A1

公开(公告)日：2010-03-18

申请号：US12150249

申请日：2008-04-24

Applicant: Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn

Inventor： Boris Kobrin ,  Romuald Nowak ,  Jeffrey D. Chinn

IPC: B32B5/00 ,  B32B9/00 ,  B05D5/12 ,  B28B7/38

CPC classification number: C23C16/403 ,  B81B3/0075 ,  B81C99/0085 ,  B81C2201/0153 ,  B81C2201/112 ,  C23C16/405 ,  C23C16/45525

Abstract: The carbon-doped metal oxide films described provide a low coefficient of friction, typically ranging from about 0.05 to about 0.4. Applied over a silicon substrate, for example, the carbon-doped metal oxide films provide anti-stiction properties, where the measured work of adhesion for a coated MEMS cantilever beam is less than 10 μJ/m2. The films provide unexpectedly low water vapor transmission. In addition, the carbon-doped metal oxide films are excellent when used as a surface release coating for nanoimprint lithography. The carbon content in the carbon-doped metal oxide films ranges from about 5 atomic % to about 20 atomic %.

Abstract translation: 所述的碳掺杂的金属氧化物膜提供低摩擦系数，通常为约0.05至约0.4。 施加在硅衬底上，例如，碳掺杂的金属氧化物膜提供抗静电性质，其中测量的涂覆的MEMS悬臂梁的粘附力小于10μJ/ m 2。 这些膜提供了意想不到的低水蒸汽传输。 此外，当用作纳米压印光刻的表面剥离涂层时，碳掺杂的金属氧化物膜是优异的。 碳掺杂的金属氧化物膜中的碳含量为约5原子％至约20原子％。

公开(公告)号：US20080248263A1

公开(公告)日：2008-10-09

申请号：US12077261

申请日：2008-03-17

Applicant: Boris Kobrin

Inventor： Boris Kobrin

IPC: B32B33/00 ,  C23C16/00 ,  C08J7/18 ,  C23C14/02

CPC classification number: C23C16/403 ,  C08J7/16 ,  C23C16/45514 ,  Y10T428/24802

Abstract: The present invention is related to a chemical vapor deposition method of depositing layers of materials to provide super-hydrophilic surface properties, or super-hydrophobic surface properties, or combinations of such properties at various locations on a given surface. The invention also relates to various product applications which make use of super-hydrophobic surface properties, such as electronic devices, biological analytical and diagnostic tools, and optical devices, for example.

Abstract translation: 本发明涉及沉积材料层以提供超亲水表面性质或超疏水性表面性质的化学气相沉积方法，或者给定表面上各种位置处的这些性质的组合。 本发明还涉及使用超疏水表面性质的各种产品应用，例如电子设备，生物分析和诊断工具以及光学装置。

公开(公告)号：US20060213441A1

公开(公告)日：2006-09-28

申请号：US11445706

申请日：2006-06-02

Applicant: Boris Kobrin ,  Romuald Nowak ,  Richard Yi ,  Jeffrey Chinn

Inventor： Boris Kobrin ,  Romuald Nowak ,  Richard Yi ,  Jeffrey Chinn

IPC: C23C16/00

CPC classification number: C23C16/45557 ,  B05D1/60 ,  B05D3/142 ,  B82Y30/00 ,  C23C16/4485 ,  C23C16/45561

Abstract: A vapor phase deposition method and apparatus for the application of thin layers and coatings on substrates. The method and apparatus are useful in the fabrication of electronic devices, micro-electromechanical systems (MEMS), Bio-MEMS devices, micro and nano imprinting lithography, and microfluidic devices. The apparatus used to carry out the method provides for the addition of a precise amount of each of the reactants to be consumed in a single reaction step of the coating formation process. The apparatus provides for precise addition of quantities of different combinations of reactants during a single step or when there are a number of different individual steps in the coating formation process. The precise addition of each of the reactants in vapor form is metered into a predetermined set volume at a specified temperature to a specified pressure, to provide a highly accurate amount of reactant.

Abstract translation: 一种用于在基底上施加薄层和涂层的气相沉积方法和装置。 该方法和装置可用于制造电子设备，微机电系统（MEMS），生物MEMS装置，微型和纳米压印光刻以及微流体装置。 用于实施该方法的装置提供了在涂层形成过程的单个反应步骤中添加精确量的每种待消耗的反应物。 该装置提供在单一步骤期间或当涂层形成过程中存在许多不同的单独步骤时精确添加量的不同组合的反应物。 将蒸气形式的每种反应物的精确加入在指定温度下计量到预定设定体积至指定压力，以提供高精度的反应物。