Abstract:
A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.
Abstract:
Provided are a cooling block that can be easily manufactured by forming vertical or horizontal flow paths in an integrated single block body through drilling, and a plasma reaction device having same, and may include: an integrated block body; a first vertical flow path formed in a vertical shape by passing through the inside of the block body from one surface of the block body; a first horizontal flow path passing through one portion of the first vertical flow path; a second horizontal flow path passing through the other portion of the first vertical flow path; a second vertical flow path passing through the first horizontal flow path and the second horizontal flow path; a first sealing stopper provided at a first point so that a refrigerant, having passed through the first vertical flow path, can branch in two ways and then merge into the second vertical flow path; and a second sealing stopper provided at a second point.
Abstract:
A remote plasma generator includes a body, a driver, and a protection tube. The body includes a gas injection port, a plasma exhaust port, and a plasma generation pipe through which discharge gas or plasma flow. The driver is coupled to the body and generates a magnetic field and plasma in the body. The protection tube is at an inner side of the plasma generation pipe to protect the plasma generation pipe from plasma.
Abstract:
There are provided a substrate transferring apparatus for continuously loading/unloading a plurality of substrates in and from a process chamber to reduce time spent on transferring the substrates and to improve productivity and a substrate processing system using the same. The substrate transfer apparatus is installed in the transfer chamber and transfers substrates between first and second process chambers which is positioned lateral sides of the transfer chamber and a load rock chamber. The substrate transfer apparatus includes a driving unit to supply a rotational force, a spindle connected to the driving unit, first swivel plate arms to load/unload substrate to/from first process chamber, and second swivel plate arms to load/unload substrate to/from second process chamber. Since substrates before and after being processed are rapidly exchanged during the simultaneous or continuous process of plural substrates, processing rate increases and overall productivity can be increased.
Abstract:
There is provided an inductively coupled plasma reactor. The inductively coupled plasma reactor is connected to a transformer with multiple magnetic cores and a primary winding, to transfer an electromotive force for plasma discharge to a plasma discharge chamber of a reactor body. Parts of magnetic core positioned in side the plasma discharge chamber are protected by being entirely covered by a core protecting tube. The primary winding is electrically connected to a power supply source providing radio frequency power. In the inductively coupled plasma reactor, since a number of magnetic core cross sectional parts are positioned inside the plasma discharge chamber, the efficiency of transferring the inductively coupled energy to be connected with plasma is very high.
Abstract:
A two way gate valve includes a valve chamber having a first entrance coupled with a first chamber, a second entrance coupled with a second chamber, and an openable and closable chamber cover; a moving module having a first sealing plate for sealing the first entrance, a second sealing plate for sealing the second entrance, and a moving module body to which the first and the second sealing plates are mounted; a push-pull module having a push-pull module body coupled with the moving module body such that the moving module body can linearly move, a first operating body for moving the moving module in a first entrance direction such that the first sealing plate seals the first entrance, and a second operating body for moving the moving module in a second entrance direction such that the second sealing plate seals the second entrance.
Abstract:
Provided is a resonant network for plasma power supply, which is connected between a power supply unit and an output unit. The resonant network includes a resonant inductor connected in series with the power supply unit, a resonant capacitor connected in parallel with the output unit and connected in series with the resonant inductor, and a passive element connected in series with the output unit and the resonant inductor and connected in parallel with the resonant capacitor.
Abstract:
A remote plasma generator includes a body, a driver, and a protection tube. The body includes a gas injection port, a plasma exhaust port, and a plasma generation pipe through which discharge gas or plasma flow. The driver is coupled to the body and generates a magnetic field and plasma in the body. The protection tube is at an inner side of the plasma generation pipe to protect the plasma generation pipe from plasma.
Abstract:
A method for manufacturing a semiconductor device may include: forming a main magnetic field having an axis, and forming a subsidiary magnetic field substantially parallel to the axis; applying an alternating current along a path between the main and the subsidiary magnetic fields; allowing a gas to flow along a flow path along the path of the current so that a gas plasma is generated from the gas; providing the gas plasma into a chamber separated from a position where the gas plasma is generated; and performing a process for manufacturing a semiconductor device by employing the gas plasma.
Abstract:
A capacitively coupled plasma reactor includes a plasma reactor, a capacitive coupling electrode assembly including a plurality of capacitive coupling electrodes to induce plasma discharge inside the plasma reactor, a main power supply source to supply radio-frequency power, and a distribution circuit to receive the radio-frequency power supplied from the main power supply source and to distribute the received radio-frequency power to the plurality of capacitive coupling electrodes.