Plasma etching device
    2.
    发明授权
    Plasma etching device 失效
    等离子体蚀刻装置

    公开(公告)号:US08114245B2

    公开(公告)日:2012-02-14

    申请号:US10304869

    申请日:2002-11-26

    摘要: A plasma etching device which has an auxiliary electrode enabling realization of a uniform plasma density of generated plasma on the surface of a base and which enables uniform etching with respect to the base without depending upon pressure and without rotating a magnetic field applying means. The plasma etching device has magnetic field applying means which has two parallel plate electrodes I and II and RF power applying means, with the base set on the electrode I, and which is horizontal and unidirectional with respect to the surface of the base where plasma etching is carried out. In this plasma etching device, an auxiliary electrode is provided at least on the upstream side of the base in a flow of electron current generated by the magnetic field applying means. The auxiliary electrode includes a local electrode arranged on the side facing the electrode II and means for adjusting impedance provided at a part of the local electrode to be electrically connected with the electrode I.

    摘要翻译: 一种等离子体蚀刻装置,其具有能够实现基底表面上产生的等离子体的均匀等离子体密度的辅助电极,并且能够相对于基座进行均匀蚀刻而不依赖于压力而不旋转磁场施加装置。 等离子体蚀刻装置具有磁场施加装置,其具有两个平行板电极I和II以及RF功率施加装置,其基极设置在电极I上,并且相对于基板的表面是水平和单向的,其中等离子体蚀刻 完成了。 在该等离子体蚀刻装置中,在由磁场施加装置产生的电流的流动中,至少在基座的上游侧设置有辅助电极。 辅助电极包括布置在面向电极II的一侧的局部电极和用于调节局部电极的一部分以与电极I电连接的阻抗的装置。

    Vacuum thermal insulating valve
    6.
    发明授权
    Vacuum thermal insulating valve 失效
    真空保温阀

    公开(公告)号:US07673649B2

    公开(公告)日:2010-03-09

    申请号:US10597303

    申请日:2005-01-13

    IPC分类号: B65D81/20

    摘要: The present invention provides a vacuum thermal insulating valve that may be used at high temperature in gas supply systems or gas exhaust systems, and also may be made substantially small and compact in size owing to its excellent thermal insulating performance. With a vacuum thermal insulating valve comprising a valve equipped with a valve body and an actuator, and a vacuum thermal insulating box that houses the valve, the afore-mentioned vacuum thermal insulating box S is formed by a square-shaped lower vacuum jacket S5 having a cylinder-shaped vacuum thermal insulating pipe receiving part J on a side and with its upper face made open, and the square-shaped upper vacuum jackets S4, which is hermetically fitted to the lower vacuum jacket S5 and with its lower face made open.

    摘要翻译: 本发明提供一种真空绝热阀,其可以在气体供给系统或排气系统中在高温下使用,并且由于其绝热性能优异,也可以制成大小小型的真空绝热阀。 使用包括阀体和致动器的阀的真空隔热阀和容纳阀的真空保温箱,上述真空保温箱S由方形的下部真空夹套S5形成, 圆筒形真空绝热管接收部分J的侧面并且其上表面打开,方形的上部真空夹套S4气密地装配到下部真空套筒S5上并且其下表面打开。

    Plasma process apparatus and its processor
    8.
    发明授权
    Plasma process apparatus and its processor 失效
    等离子体处理装置及其处理器

    公开(公告)号:US07478609B2

    公开(公告)日:2009-01-20

    申请号:US10494562

    申请日:2002-10-11

    IPC分类号: C23C16/00 C23F1/00 H01L21/306

    CPC分类号: H01J37/32238 H01J37/32192

    摘要: A plasma processing apparatus and a processing apparatus having a widened process condition range allowing plasma generation are obtained by increasing microwave propagation efficiency. The plasma processing apparatus includes a processing chamber where plasma processing is performed, and microwave introducer for introducing microwaves into the processing chamber. The microwave introducer includes a dielectric member transmitting the microwaves. The dielectric member has a shape in cross section in a direction approximately perpendicular to a transmitting direction of the microwaves through the dielectric member that allows transmission of the microwaves of substantially a single mode. The dielectric member has a thickness T in the transmitting direction that satisfies a condition of (λ×(2m+0.7)/4)≦T≦(λ×(2m+1.3)/4), where λ is a wavelength of the microwaves of the single mode transmitted through the dielectric member and m is an arbitrary integer.

    摘要翻译: 通过提高微波传播效率,可以获得等离子体处理装置和具有允许等离子体产生的加宽处理条件范围的处理装置。 等离子体处理装置包括进行等离子体处理的处理室和用于将微波引入处理室的微波导引器。 微波导引器包括传输微波的电介质构件。 电介质构件的形状在大致垂直于通过电介质构件的微波的传输方向的方向上的横截面,其允许基本上单模的微波的传输。 电介质构件具有满足条件(lambdax(2m + 0.7)/ 4)<= T <=(lambdax(2m + 1.3)/ 4)的传输方向的厚度T,其中λ是微波的波长 通过介电构件传输的单一模式,m是任意整数。