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公开(公告)号：US11425823B2
公开(公告)日：2022-08-23
申请号：US17339529
申请日：2021-06-04
摘要： The present disclosure provides a method for producing a wiring substrate. A seeded substrate including an insulation substrate, a conductive undercoat layer, and a conductive seed layer provided in a first region, in that order, is first prepared. An insulation layer covering the seed layer and the undercoat layer is then formed. Subsequently, the insulation layer is etched to expose a surface of the seed layer and form a remaining insulation layer covering the undercoat layer in the second region. Subsequently, a voltage is applied between an anode and the seed layer while a solid electrolyte membrane containing a metal ion-containing aqueous solution disposed between the seed layer and the anode and the membrane and the seed layer pressed into contact with each other, thereby a metal layer being formed on the surface of the seed layer. Thereafter, the remaining insulation layer is removed and the undercoat layer is etched.
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公开(公告)号：US10358734B2
公开(公告)日：2019-07-23
申请号：US15026366
申请日：2014-10-02
摘要： A nickel solution for forming a film that can suppress generation of hydrogen gas between a solid electrolyte membrane and a substrate while the solid electrolyte membrane and the substrate are brought into contact with each other. The pH of the nickel solution for forming a film is in the range of 4.2 to 6.1. The nickel solution for forming a film further contains a pH buffer solution that has a buffer function in the range of the pH and does not form insoluble salts or complexes with the nickel ions during formation of the film.
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公开(公告)号：US09659892B2
公开(公告)日：2017-05-23
申请号：US14925267
申请日：2015-10-28
CPC分类号： H01L24/16 , B23K35/262 , C22C13/00 , H01L24/05 , H01L24/29 , H01L24/32 , H01L24/33 , H01L24/81 , H01L24/83 , H01L2224/04026 , H01L2224/05155 , H01L2224/05647 , H01L2224/16245 , H01L2224/16502 , H01L2224/291 , H01L2224/29111 , H01L2224/32245 , H01L2224/32503 , H01L2224/33181 , H01L2224/81805 , H01L2224/83447 , H01L2224/8381 , H01L2224/83815 , H01L2924/014 , H01L2924/181 , H01L2924/01029 , H01L2924/00014 , H01L2924/01028 , H01L2924/01015 , H01L2924/01083 , H01L2924/01051 , H01L2924/01047 , H01L2924/00012
摘要： A method of manufacturing a semiconductor device includes: arranging a solder material containing at least tin, between a semiconductor element and a joined member provided with a nickel layer and a copper layer, such that the solder material is in contact with the copper layer, the nickel layer being provided on a surface of the joined member, and the copper layer being provided on at least a portion of a surface of the nickel layer; and melting and solidifying the solder material to form Cu6Sn5 on the surface of the nickel layer using tin of the solder material and the copper layer.
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公开(公告)号：US11903141B2
公开(公告)日：2024-02-13
申请号：US17400715
申请日：2021-08-12
发明人： Keiji Kuroda , Rentaro Mori , Hiroshi Yanagimoto , Haruki Kondoh , Kazuaki Okamoto , Akira Kato
CPC分类号： H05K3/242 , C25D3/38 , C25D17/002 , C25D17/005 , H05K2203/0723
摘要： A method for manufacturing a wiring board in which the adhesion between an underlayer and a seed layer is improved. A diffusion layer in which an element forming the underlayer and an element forming a coating layer are mutually diffused is formed between the underlayer and a wiring portion of the coating layer by irradiating the wiring portion with a laser beam. A seed layer is formed by removing a portion excluding the wiring portion of the coating layer from the underlayer. A metal layer is formed by disposing a solid electrolyte membrane between an anode and the seed layer and applying voltage between the anode and the underlayer. An exposed portion without the seed layer of the underlayer is removed from an insulating substrate.
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公开(公告)号：US11665829B2
公开(公告)日：2023-05-30
申请号：US17122021
申请日：2020-12-15
CPC分类号： H05K3/027 , H05K3/12 , H05K3/16 , C23C18/28 , C25D17/10 , H05K3/108 , H05K3/1208 , H05K2203/0713 , H05K2203/0716 , H05K2203/0723
摘要： A method for manufacturing a wiring board is capable of forming a metal layer included in a wiring layer to have an even thickness. The method includes preparing a conductive first underlayer on a surface of a substrate; a conductive second underlayer on a surface of the first underlayer; and a seed layer on a surface of the second underlayer and containing metal. The method disposes a solid electrolyte membrane between an anode and the seed layer as a cathode; applies voltage between the anode and the first underlayer to form a metal layer on the surface of the seed layer; removes an exposed portion of the second underlayer without the seed layer from the substrate; and removes an exposed portion of the first underlayer without the seed layer from the substrate. The first underlayer is a material having a higher electrical conductivity than that of the second underlayer.
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公开(公告)号：US09752246B2
公开(公告)日：2017-09-05
申请号：US15033967
申请日：2014-11-12
发明人： Motoki Hiraoka , Hiroshi Yanagimoto , Yuki Sato
CPC分类号： C25D5/06 , C25D3/00 , C25D17/00 , C25D17/002 , C25D17/005 , C25D17/14
摘要： Provided is film formation apparatus of a metal film and a film formation method therefor capable of forming a homogeneous metal film of a uniform thickness stably, while being less affected by the surface state of the anode. A film formation apparatus 1A includes: an anode 11; a solid electrolyte membrane 13 disposed between the anode 11 and a base B serving as a cathode; and a power supply unit 14 to apply voltage between the anode 11 and the base B, the film formation apparatus being configured so that, when the solid electrolyte membrane 13 is brought into contact with a surface of the base B, and voltage is applied between the anode 11 and the base B, metal is deposited on the surface of the base B from metal ions included inside of the solid electrolyte membrane 13, so that the metal film F made of the metal is formed. The film formation apparatus 1A includes a mounting base 21 on which the base B is to be placed, and the mounting base 21 has a suction unit 22 to suck the solid electrolyte membrane 13 from a side of the base B so that the solid electrolyte membrane 13 is brought into intimate contact with the surface of the base B during formation of the metal film F.
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公开(公告)号：US09677185B2
公开(公告)日：2017-06-13
申请号：US14779735
申请日：2014-02-04
发明人： Yuki Sato , Motoki Hiraoka , Hiroshi Yanagimoto
摘要： A film formation system for continuously forming metal films with desired thickness on the surfaces of substrates, and increase the film forming speed while suppressing abnormality of the metal films. A film formation system includes an anode; a solid electrolyte membrane between the anode and a substrate serving as a cathode such that a metal ion solution is disposed on the anode side thereof; and a power supply portion for applying a voltage across the anode and the substrate. A voltage is applied across the anode and the substrate o deposit metal out of the metal ions contained in the solid electrolyte membrane onto the substrate surface, thereby forming a metal film made of the metal ions. The anode has a base material, which is insoluble in the metal ion solution, and a metal plating film made of the same metal as the metal film, formed over the base material.
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公开(公告)号：US20190237773A1
公开(公告)日：2019-08-01
申请号：US16261927
申请日：2019-01-30
发明人： Yuhei Asano , Hiroshi Yanagimoto , Katsumi Ito
IPC分类号： H01M8/0228 , H01M8/0226 , H01M8/0213 , H01M8/0206
CPC分类号： H01M8/0228 , H01M8/0206 , H01M8/0213 , H01M8/0226
摘要： Provided is a separator for fuel cell that can reduce the initial contact resistance and the contact resistance under the corrosive environment. A separator for fuel cell includes a metal substrate and a surface layer on the surface of the metal substrate. The surface layer includes CNT and a Si-based binder. The surface layer has the surface coverage of the CNT that is 90% or more and the ratio of the Si-based binder that is 40% or more.
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公开(公告)号：US09982359B2
公开(公告)日：2018-05-29
申请号：US14955791
申请日：2015-12-01
发明人： Yuki Sato , Motoki Hiraoka , Hiroshi Yanagimoto
CPC分类号： C25F3/14 , C25D5/022 , C25D17/002 , C25F7/00
摘要： A surface treatment method includes: roughening a surface region of a substrate corresponding to a through hole provided to a masking plate by supplying a solvent to a solid electrolyte film from a second surface of a masking plate through the through hole, in a state where: a first surface of the solid electrolyte film is arranged directly on the surface of the substrate; and a first surface of the masking plate is arranged directly on a second surface of the solid electrolyte film, wherein the supplied solvent penetrates the solid electrolyte film, and dissolves the surface of the substrate.
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公开(公告)号：US09909226B2
公开(公告)日：2018-03-06
申请号：US14912234
申请日：2014-08-20
发明人： Motoki Hiraoka , Hiroshi Yanagimoto , Yuki Sato
CPC分类号： C25D5/04 , C25D3/00 , C25D5/08 , C25D5/22 , C25D17/00 , C25D17/002 , C25D17/007 , C25D17/12 , C25D17/14 , C25D21/04
摘要： A solid electrolyte membrane (13) is arranged on a surface of an anode (11) between the anode (11) and a substrate (B) that serves as a cathode. The solid electrolyte membrane (13) is brought into contact with the substrate (B). At the same time, a metal film (F) is formed on the surface of the substrate (B) by causing metal to precipitate onto the surface of the substrate (B) from metal ions through application of voltage between the anode (11) and the substrate (B) in a first contact state where the solid electrolyte membrane (13) contacts the substrate (B). The metal ions are contained inside the solid electrolyte membrane (13).
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