摘要:
The present invention provides a manufacturing method of a semiconductor module which enables the joining at a low temperature within a short time and can obtain more reliable joining portions by performing the joining without using a solder joining medium. The manufacturing method of a semiconductor module includes a first joining step for joining first circuit electrodes which are formed on a circuit board and back-surface-side die electrodes of a semiconductor die, a second joining step for joining the front-surface-side electrodes of the semiconductor die and one ends of lead frames, and a third joining step for joining another ends of the lead frame and second circuit electrodes which are formed on the circuit board, wherein a low-melting-temperature metal layer is formed on one conductive portion of a pair of conductive portions to be joined and, thereafter, the low-melting-temperature metal layer is heated and pressurized thus diffusing the low-melting-temperature metal layer into the pair of conductive portions by solid-liquid diffusion whereby the conductive portions are joined to each other.
摘要:
A semiconductor device includes a device carrier, a first semiconductor chip mounted on the device carrier and a second semiconductor chip mounted on the device carrier. Further, the semiconductor device includes a first contact clip bonded to a first electrode of the first semiconductor chip, a second contact clip bonded to a first electrode of the second semiconductor chip and an insulating connector configured to hold the first contact clip and the second contact clip together.
摘要:
A method includes providing a semiconductor chip having a first main surface and a second main surface. A semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. A first layer of solder material is provided between the first main surface and the carrier. A contact clip including a first contact area is placed on the semiconductor chip with the first contact area facing the second main surface of the semiconductor chip. A second layer of solder material is provided between the first contact area and the second main surface. Thereafter, heat is applied to the first and second layers of solder material to form diffusion solder bonds between the carrier, the semiconductor chip and the contact clip.
摘要:
A power semiconductor circuit includes at least one semiconductor having at least one contact area, and at least one bonding conductor strip having at least one contact region fastened on at least one of the contact areas. The contact region of the bonding conductor strip includes cutouts.
摘要:
A semiconductor device includes a device carrier, a first semiconductor chip mounted on the device carrier and a second semiconductor chip mounted on the device carrier. Further, the semiconductor device includes a first contact clip bonded to a first electrode of the first semiconductor chip, a second contact clip bonded to a first electrode of the second semiconductor chip and an insulating connector configured to hold the first contact clip and the second contact clip together.
摘要:
A power semiconductor circuit includes at least one semiconductor having at least one contact area, and at least one bonding conductor strip having at least one contact region fastened on at least one of the contact areas. The contact region of the bonding conductor strip includes cutouts.
摘要:
A method includes providing a semiconductor chip having a first main surface and a second main surface. A semiconductor chip is placed on a carrier with the first main surface of the semiconductor chip facing the carrier. A first layer of solder material is provided between the first main surface and the carrier. A contact clip including a first contact area is placed on the semiconductor chip with the first contact area facing the second main surface of the semiconductor chip. A second layer of solder material is provided between the first contact area and the second main surface. Thereafter, heat is applied to the first and second layers of solder material to form diffusion solder bonds between the carrier, the semiconductor chip and the contact clip.
摘要:
The present invention provides a manufacturing method of a semiconductor module which enables the joining at a low temperature within a short time and can obtain more reliable joining portions by performing the joining without using a solder joining medium. The manufacturing method of a semiconductor module includes a first joining step for joining first circuit electrodes which are formed on a circuit board and back-surface-side die electrodes of a semiconductor die, a second joining step for joining the front-surface-side electrodes of the semiconductor die and one ends of lead frames, and a third joining step for joining another ends of the lead frame and second circuit electrodes which are formed on the circuit board, wherein a low-melting-temperature metal layer is formed on one conductive portion of a pair of conductive portions to be joined and, thereafter, the low-melting-temperature metal layer is heated and pressurized thus diffusing the low-melting-temperature metal layer into the pair of conductive portions by solid-liquid diffusion whereby the conductive portions are joined to each other.