Selective recovery of manganese and zinc from geothermal brines
    4.
    发明授权
    Selective recovery of manganese and zinc from geothermal brines 有权
    从地热盐水中选择性回收锰和锌

    公开(公告)号:US09057117B2

    公开(公告)日:2015-06-16

    申请号:US13874004

    申请日:2013-04-30

    申请人: Simbol Inc.

    摘要: This invention relates to a method for the selective recovery of manganese and zinc from geothermal brines that includes the steps of removing silica and iron from the brine, oxidizing the manganese and zinc to form precipitates thereof, recovering the manganese and zinc precipitates, solubilizing the manganese and zinc precipitates, purifying the manganese and zinc, and forming a manganese precipitate, and recovering the zinc by electrochemical means.

    摘要翻译: 本发明涉及从地热盐水中选择性回收锰和锌的方法,包括从盐水中除去二氧化硅和铁,氧化锰和锌形成沉淀物,回收锰和锌沉淀物,溶解锰 和锌沉淀物,纯化锰和锌,并形成锰沉淀,并通过电化学方法回收锌。

    Selective Recovery of Manganese and Zinc From Geothermal Brines
    6.
    发明申请
    Selective Recovery of Manganese and Zinc From Geothermal Brines 有权
    从地热盐水中选择性还原锰和锌

    公开(公告)号:US20130236378A1

    公开(公告)日:2013-09-12

    申请号:US13874004

    申请日:2013-04-30

    申请人: SIMBOL INC.

    IPC分类号: C22B19/00 C22B47/00

    摘要: This invention relates to a method for the selective recovery of manganese and zinc from geothermal brines that includes the steps of removing silica and iron from the brine, oxidizing the manganese and zinc to form precipitates thereof, recovering the manganese and zinc precipitates, solubilizing the manganese and zinc precipitates, purifying the manganese and zinc, and forming a manganese precipitate, and recovering the zinc by electrochemical means.

    摘要翻译: 本发明涉及一种从地热盐水中选择性回收锰和锌的方法,包括从盐水中除去二氧化硅和铁,氧化锰和锌形成沉淀物,回收锰和锌沉淀物,溶解锰 和锌沉淀物,纯化锰和锌,并形成锰沉淀,并通过电化学方法回收锌。

    Process for making doped zinc oxide
    9.
    发明授权
    Process for making doped zinc oxide 有权
    制造掺杂氧化锌的方法

    公开(公告)号:US07972898B2

    公开(公告)日:2011-07-05

    申请号:US11861455

    申请日:2007-09-26

    IPC分类号: C22B19/00 C03C17/245

    摘要: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material.

    摘要翻译: 本发明涉及一种制造用于晶体管的氧化锌基薄膜半导体的方法,其包括在衬底上的薄膜沉积,包括提供多种包含第一,第二和第三气态材料的气态材料,其中 第一气体材料是含锌挥发性材料,第二气态材料与其反应,使得当第一或第二气态材料之一位于基材表面上时,第一或第二气态材料中的另一种将反应沉积 衬底上的一层材料,其中所述第三气态材料是惰性的,并且其中将挥发性含铟化合物引入到所述第一反应性气态材料或补充气态材料中。