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    METHOD OF GENERATING LOCAL ELECTRIC FIELDS
    1.
    发明申请
    METHOD OF GENERATING LOCAL ELECTRIC FIELDS 有权

    公开(公告)号：US20210080411A1

    公开(公告)日：2021-03-18

    申请号：US16982428

    申请日：2019-04-17

    申请人： Okinawa Institute of Science and Technology School Corporation

    发明人： Keshav Moreshwar Dani ,  Michael Ka Lun Man ,  E Laine Wong

    IPC分类号： G01N23/227

    摘要： A system and method for redistributing photoexcited electrons and generate local currents within an optical spot on ultrafast timescales achieving in high-speed, high-resolution control of opto-electronic phenomena is disclosed. Selectively addressing sub-populations of photoexcited electrons within the distribution is necessary. By exploiting the spatial intensity variations in an ultrafast light pulse, local surface fields are generated within the photoexcitation spot of a doped semiconductor, which pull apart the photoexcited electrons into two separate distributions. This redistribution process can be controlled via the spatial profile and intensity of the photoexciting pulse.

    Method and system for non-destructive metrology of thin layers
    2.
    发明授权
    Method and system for non-destructive metrology of thin layers 有权

    公开(公告)号：US10533961B2

    公开(公告)日：2020-01-14

    申请号：US15773145

    申请日：2016-11-02

    申请人： Nova Measuring Instruments, Inc.

    发明人： Wei Ti Lee ,  Heath Pois ,  Mark Klare ,  Cornel Bozdog

    IPC分类号： G01N23/227 ,  G01N23/223 ,  G01N23/22 ,  G01N23/2273 ,  G01B11/06 ,  G01B15/02 ,  G01N23/2208

    摘要： Determining a property of a layer of an integrated circuit (IC), the layer being formed over an underlayer, is implemented by performing the steps of: irradiating the IC to thereby eject electrons from the IC; collecting electrons emitted from the IC and determining the kinetic energy of the emitted electrons to thereby calculate emission intensity of electrons emitted from the layer and electrons emitted from the underlayer calculating a ratio of the emission intensity of electrons emitted from the layer and electrons emitted from the underlayer; and using the ratio to determine material composition or thickness of the layer. The steps of irradiating IC and collecting electrons may be performed using x-ray photoelectron spectroscopy (XPS) or x-ray fluorescence spectroscopy (XRF).

    Silicon germanium thickness and composition determination using combined XPS and XRF technologies
    5.
    发明授权
    Silicon germanium thickness and composition determination using combined XPS and XRF technologies 有权
    使用组合的XPS和XRF技术的硅锗厚度和组成测定

    公开(公告)号：US09594035B2

    公开(公告)日：2017-03-14

    申请号：US14691164

    申请日：2015-04-20

    申请人： Heath A. Pois ,  Wei Ti Lee

    发明人： Heath A. Pois ,  Wei Ti Lee

    IPC分类号： G01N23/22 ,  G01B15/02 ,  G01N23/223 ,  G01N23/227

    CPC分类号： G01N23/2206 ,  G01B15/02 ,  G01N23/2208 ,  G01N23/223 ,  G01N23/2273 ,  G01N2223/61 ,  G01N2223/6116

    摘要： Systems and approaches for silicon germanium thickness and composition determination using combined XPS and XRF technologies are described. In an example, a method for characterizing a silicon germanium film includes generating an X-ray beam. A sample is positioned in a pathway of said X-ray beam. An X-ray photoelectron spectroscopy (XPS) signal generated by bombarding said sample with said X-ray beam is collected. An X-ray fluorescence (XRF) signal generated by bombarding said sample with said X-ray beam is also collected. Thickness or composition, or both, of the silicon germanium film is determined from the XRF signal or the XPS signal, or both.

    摘要翻译： 描述了使用组合XPS和XRF技术的硅锗厚度和成分测定的系统和方法。 在一个示例中，用于表征硅锗膜的方法包括产生X射线束。 样品位于所述X射线束的通路中。 收集通过用所述X射线束轰击所述样品产生的X射线光电子能谱（XPS）信号。 还收集通过用所述X射线束轰击所述样品而产生的X射线荧光（XRF）信号。 硅锗膜的厚度或组成或两者均由XRF信号或XPS信号或两者确定。

    X-RAY SOURCE
    6.
    发明申请
    X-RAY SOURCE 审中-公开
    X射线源

    公开(公告)号：US20160111177A1

    公开(公告)日：2016-04-21

    申请号：US14893911

    申请日：2014-05-21

    申请人： David Alan Bates

    发明人： David Alan Bates

    IPC分类号： G21K1/06 ,  G01N23/227 ,  H05G1/02

    CPC分类号： G21K1/067 ,  G01N23/2273 ,  G21K1/06 ,  G21K2201/062 ,  G21K2201/064 ,  H01J35/02 ,  H01J2235/163 ,  H05G1/02

    摘要： An X-ray source comprising: an elongate tubular housing adapted to be fitted into a port of and extend into a chamber containing a sample to be analysed, said housing containing: an electron gun and a target mounted in the housing, the electron gun being arranged to direct electrons to a point on the target such that the target radiates X-rays; and a monochromator arranged to focus X-rays radiated from the target to a focal point on a sample in the chamber; wherein the monochromator is positioned, and comprises a material selected such that the target, the monochromator and the focal point on the sample are substantially in-line within the envelope of the tubular housing.

    摘要翻译： 一种X射线源，包括：细长管状壳体，其适于装配到容纳要分析的样品的腔室中并且延伸到容纳待分析样品的腔室中，所述壳体包含：电子枪和安装在壳体中的靶，电子枪为 被布置成将电子引导到目标上的点，使得目标辐射X射线; 以及单色仪，其被布置成将从所述目标辐射的X射线聚焦到所述腔室中的样品上的焦点; 其中所述单色仪被定位，并且包括选择的材料，使得所述样品上的所述靶，所述单色仪和所述焦点基本上在所述管状壳体的封套内成直线。

    System and method for characterizing a film by X-ray photoelectron and low-energy X-ray fluorescence spectroscopy
    7.
    发明授权
    System and method for characterizing a film by X-ray photoelectron and low-energy X-ray fluorescence spectroscopy 有权
    通过X射线光电子和低能X射线荧光光谱表征膜的系统和方法

    公开(公告)号：US09240254B2

    公开(公告)日：2016-01-19

    申请号：US13246488

    申请日：2011-09-27

    申请人： Bruno W. Schueler ,  David A. Reed ,  Jeffrey Thomas Fanton ,  Rodney Smedt

    发明人： Bruno W. Schueler ,  David A. Reed ,  Jeffrey Thomas Fanton ,  Rodney Smedt

    IPC分类号： G01N23/223 ,  G21K1/00 ,  G21K1/06 ,  G01N23/227

    CPC分类号： G21K1/06 ,  G01N23/223 ,  G01N23/2273 ,  G01N2223/61 ,  G21K2201/062 ,  G21K2201/064

    摘要： Systems and methods for characterizing films by X-ray photoelectron spectroscopy (XPS) are disclosed. For example, a system for characterizing a film may include an X-ray source for generating an X-ray beam having an energy below the k-edge of silicon. A sample holder may be included for positioning a sample in a pathway of the X-ray beam. A first detector may be included for collecting an XPS signal generated by bombarding the sample with the X-ray beam. A second detector may be included for collecting an X-ray fluorescence (XRF) signal generated by bombarding the sample with the X-ray beam. Monitoring/estimation of the primary X-ray flux at the analysis site may be provided by X-ray flux detectors near and at the analysis site. Both XRF and XPS signals may be normalized to the (estimated) primary X-ray flux to enable film thickness or dose measurement without the need to employ signal intensity ratios.

    摘要翻译： 公开了通过X射线光电子能谱（XPS）表征膜的系统和方法。 例如，用于表征胶片的系统可以包括用于产生具有低于硅的k边缘的能量的X射线束的X射线源。 可以包括样品保持器以将样品定位在X射线束的通路中。 可以包括第一检测器以收集通过用X射线束轰击样品而产生的XPS信号。 可以包括第二检测器，用于收集通过用X射线束轰击样品而产生的X射线荧光（XRF）信号。 在分析现场的X射线通量探测器附近和分析现场可以提供监测/估计分析现场的主要X射线通量。 XRF和XPS信号都可以归一化为（估计的）初级X射线通量，以实现膜厚度或剂量测量，而不需要使用信号强度比。

    Charged particle beam system
    9.
    发明授权
    Charged particle beam system 有权
    带电粒子束系统

    公开(公告)号：US08304725B2

    公开(公告)日：2012-11-06

    申请号：US12944434

    申请日：2010-11-11

    申请人： Osamu Komuro ,  Osamu Nasu

    发明人： Osamu Komuro ,  Osamu Nasu

    IPC分类号： G01N23/227

    CPC分类号： H01J37/268 ,  H01J2237/047 ,  H01J2237/2008 ,  H01J2237/2803

    摘要： A charged particle beam system wherein the output of the secondary electron detector is detected while the retarding voltage is varied between the values for which the secondary electrons do not reach the sample and the values for which the secondary electrons reach the sample, and the surface potential of the sample is determined on the basis of the relationship between the retarding voltage and the detected output of the secondary electron detector.

    摘要翻译： 一种带电粒子束系统，其中在二次电子未到达样品的值和二次电子到达样品的值之间改变延迟电压并检测二次电子检测器的输出，并且表面电位 基于延迟电压与二次电子检测器的检测输出之间的关系来确定样品。

    Energy-filtering cathode lens microscopy instrument
    10.
    发明申请
    Energy-filtering cathode lens microscopy instrument 失效
    能量过滤阴极透镜显微镜仪器

    公开(公告)号：US20070200062A1

    公开(公告)日：2007-08-30

    申请号：US11364298

    申请日：2006-02-28

    申请人： Rudolf Tromp

    发明人： Rudolf Tromp

    IPC分类号： H01J37/05 ,  H01J49/46 ,  H01J37/26 ,  G01N23/225 ,  G01N23/227

    CPC分类号： H01J37/05 ,  H01J37/252 ,  H01J2237/0458 ,  H01J2237/057 ,  H01J2237/2538 ,  H01J2237/2544

    摘要： An energy filtering microscopy instrument is provided. An objective lens is disposed for reception of electrons in order to form an electron diffraction pattern in a backfocal plane of the objective lens. An entrance aperture disposed in the backfocal plane of the objective lens for filtering a slice of the electron diffraction pattern. A magnetic deflector has an entrance plane and an exit plane. The entrance aperture is disposed in the entrance plane. The magnetic deflector is disposed to receive the slice of the electron diffraction pattern and project an energy dispersed electron diffraction pattern to the exit plane. An exit aperture is disposed in the exit plane of the magnetic deflector for selection of desired electron energy of the energy dispersed electron diffraction pattern.

    摘要翻译： 提供能量过滤显微镜仪器。 为了在物镜的背面平面中形成电子衍射图案，设置物镜接收电子。 设置在物镜的背面平面中的入口孔，用于过滤电子衍射图案的切片。 导磁板具有入射面和出射面。 入口孔设置在入口平面中。 磁偏转器被设置为接收电子衍射图案的切片并将能量分散的电子衍射图案投射到出射平面。 出口孔布置在磁偏转器的出射平面中，用于选择能量分散的电子衍射图案的期望的电子能量。