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    PIXEL ARCHITECTURE WITH HIGH DYNAMIC RANGE
    1.
    发明公开
    PIXEL ARCHITECTURE WITH HIGH DYNAMIC RANGE 审中-公开

    公开(公告)号：US20240129647A1

    公开(公告)日：2024-04-18

    申请号：US17967021

    申请日：2022-10-17

    Applicant: BAE Systems Imaging Solutions Inc.

    Inventor： Xianmin Yi ,  Alexander Lu

    IPC: H04N5/355 ,  H04N5/372 ,  H04N5/3745 ,  H04N5/376 ,  H04N5/378

    CPC classification number: H04N5/3559 ,  H04N5/372 ,  H04N5/3745 ,  H04N5/376 ,  H04N5/378 ,  H04N5/361

    Abstract: A given pixel of a pixel array includes various operation modes with each of the operation modes having a different conversion gain for the charge received from the photodetector of the pixel. When the modes are used in conjunction with one another, the dynamic range of the pixel can be increased. A readout circuit coupled to a photodetector within a given pixel includes a transfer gate between the photodetector and a gain mode select block that includes capacitors of different sizes and one or more switches to control which capacitors are to receive the charge from the photodetector. Depending on the state(s) of the one or more switches, different operation modes with different conversion gains can be selected to increase the dynamic range of the pixel. The adaptability of the readout circuit can allow for a high dynamic range even in extreme temperature environments by lowering the dark current.

    Image sensor having improved efficiency by reducing noise and time taken for capturing image
    5.
    发明授权
    Image sensor having improved efficiency by reducing noise and time taken for capturing image 有权

    公开(公告)号：US11653113B2

    公开(公告)日：2023-05-16

    申请号：US17001053

    申请日：2020-08-24

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Moo Young Kim ,  Hyeok Jong Lee

    IPC: H04N5/357 ,  H04N5/376

    CPC classification number: H04N5/3575 ,  H04N5/3765

    Abstract: An image sensor includes a pixel including a reset circuit and a floating diffusion node, and outputting a pixel signal that is generated based on a voltage at the floating diffusion node, the pixel signal including a reset output that is generated based on the voltage at the floating diffusion node being reset by the reset circuit. The image sensor further includes a sampler sampling the output pixel signal to generate a sampling signal having a time interval corresponding to a magnitude of the output pixel signal, and a counter counting the generated sampling signal, based on a counter clock, to generate a counting value corresponding to the time interval of the sampling signal. The sampler samples the reset output of the output pixel signal n times to generate first to n-th reset sampling signals, where n is an integer of 2 or more.

    READOUT ARCHITECTURE FOR INDIRECT TIME-OF-FLIGHT SENSING
    6.
    发明申请
    READOUT ARCHITECTURE FOR INDIRECT TIME-OF-FLIGHT SENSING 有权

    公开(公告)号：US20230137801A1

    公开(公告)日：2023-05-04

    申请号：US17513064

    申请日：2021-10-28

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Andreas Suess ,  Zheng Yang

    IPC: H04N5/378 ,  H04N5/376 ,  G01S17/894 ,  H01L27/146 ,  H01L27/148

    Abstract: A time-of-flight sensor includes a pixel array of pixel circuits. A first subset of the pixel circuits is illuminated by reflected modulated light from a portion of an object. A second subset of the pixel circuits is non-illuminated by the reflected modulated light. Each pixel circuit includes a floating diffusion that stores a portion of charge photogenerated in a photodiode in response to the reflected modulated light. A transfer transistor transfers the portion of charge from the photodiode to the floating diffusion in response to modulation by a phase modulation signal. A modulation driver block generates the phase modulation signal and is coupled to a light source that emits the modulated light to the portion of the object. The modulation driver block synchronizes scanning the modulated light emitted by the light source across the object with scanning of the first subset of the pixel circuits across the pixel array.

    Image sensor using a boosting capacitor and a negative bias voltage
    7.
    发明授权
    Image sensor using a boosting capacitor and a negative bias voltage 有权

    公开(公告)号：US11637979B2

    公开(公告)日：2023-04-25

    申请号：US16801887

    申请日：2020-02-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kyungho Lee ,  Eunsub Shim ,  Jungbin Yun ,  Sungsoo Choi ,  Masato Fujita

    IPC: H04N5/369 ,  H01L23/00 ,  H01L27/146 ,  H04N5/341 ,  H04N5/351 ,  H04N5/3745 ,  H04N5/378 ,  H04N5/374 ,  H04N5/376

    Abstract: An image sensor includes a photodiode generating a charge in response to light, a transfer transistor connecting the photodiode and a floating diffusion, a reset transistor connected between the floating diffusion and a power node, a boosting capacitor connected to the floating diffusion, and adjusting a capacity of the floating diffusion in response to a boosting control signal, and a bias circuit having first and second current circuits for supplying different bias currents to an output node to which a voltage signal corresponding to a charge accumulated in the floating diffusion is output. The boosting control signal decreases from a high level to a low level after the transfer transistor is turned off, and the reset transistor is switched from a turned on state to a turned off state when the bias currents of the first and second current circuits are simultaneously provided to the output node.

    Imaging device
    8.
    发明授权
    Imaging device 有权

    公开(公告)号：US11637147B2

    公开(公告)日：2023-04-25

    申请号：US17394091

    申请日：2021-08-04

    Applicant: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.

    Inventor： Shunsuke Isono ,  Hidenari Kanehara ,  Sanshiro Shishido ,  Takeyoshi Tokuhara

    IPC: H01L27/30 ,  H04N5/374 ,  H04N5/376 ,  H01L27/146

    Abstract: An imaging device including: a semiconductor substrate including a pixel region and a peripheral region; an insulating layer that covers the pixel and peripheral regions; first electrodes located on the insulating layer above the pixel region; a photoelectric conversion layer that covers the first electrodes; a second electrode that covers the photoelectric conversion layer; detection circuitry configured to be electrically connected to the first electrodes; peripheral circuitry configured to be electrically connected to the detection circuitry, and including analog circuitry; and a third electrode electrically connected to the second electrode. The third electrode overlaps the analog circuitry in a plan view, and in all cross-sections perpendicular to a surface of the semiconductor substrate, parallel to the column direction or the row direction, intersecting at least one of the first electrodes, and intersecting the third electrode, no transistor of the digital circuitry is located directly below the third electrode.

    Imaging device and method of controlling the same
    9.
    发明授权
    Imaging device and method of controlling the same 有权

    公开(公告)号：US11598863B2

    公开(公告)日：2023-03-07

    申请号：US17476879

    申请日：2021-09-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Myeonggyun Kye ,  Seungchul Shin ,  Minsun Keel

    IPC: G01S7/486 ,  G01S7/4865 ,  H04N5/369 ,  H04N5/376 ,  H04N5/378

    Abstract: An imaging device includes a light source configured to operate by a light control signal having a first duty ratio; a pixel array in which a plurality of pixels are disposed, each of the plurality of pixels including a photodiode for generating electrical charges in response to a light reception signal output by the light source and reflected from a subject, and a pixel circuit for outputting a pixel signal corresponding to electrical charges of the photodiode; and a logic circuit configured to generate raw data for generating a depth image using the pixel signal, wherein the logic circuit inputs a photo control signal having a second duty ratio to the pixel circuit connected to the photodiode in each of the plurality of pixels, and wherein the first duty ratio is not an integer multiple of the second duty ratio.

    Image sensors with variable read out circuitry
    10.
    发明授权
    Image sensors with variable read out circuitry 有权

    公开(公告)号：US11595607B2

    公开(公告)日：2023-02-28

    申请号：US16949540

    申请日：2020-11-03

    Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

    Inventor： Nicholas Paul Cowley ,  Andrew David Talbot ,  Mukesh Rao Engla Syam

    IPC: H04N5/378 ,  H04N5/3745 ,  H04N5/376

    Abstract: An imaging device may have an array of image sensor pixels arranged in rows and columns and column readout circuitry coupled to the array. The rows of pixels may receive drive signals from row driver circuitry, and the drive signals may be sent from timing circuitry based on the locations of rows within the array. In particular, rows closer to the readout circuitry may require less settling time and therefore be driven faster than the rows further from the readout circuitry. All of the rows may be driven in a single direction, or the array of pixels may have a cut, in which case rows above the cut may be driven up and rows below the cut may be driven down. A frame buffer may be used to store the signals generated by the rows of pixels and may account for the asynchronous read out of image data.

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