公开(公告)号：WO2018142177A1

公开(公告)日：2018-08-09

申请号：PCT/IB2017/000722

申请日：2017-02-02

申请人： MACOM TECHNOLOGY SOLUTIONS HOLDINGS, INC.

发明人： BOUISSE, Gerard ,  ALEXANDER, Andrew ,  PATTERSON, Andrew

IPC分类号： H03F1/02 ,  H01L23/66 ,  H03F1/56 ,  H03F3/195 ,  H03F3/24 ,  H01P5/12

摘要： Apparatus and methods for a modified Doherty amplifier operating at gigahertz frequencies are described. The combining of signals from a main amplifier (132) and a peaking amplifier (138) occur at a combining node prior to impedance matching of the amplifier's output to a load. An impedance inverter (410) comprises a first integrated distributed inductor and a second integrated distributed inductor connected by a capacitor (580), wherein the impedance inverter (410) is connected between an output of the main amplifier (132) and the combining node.

公开(公告)号：WO2017222471A1

公开(公告)日：2017-12-28

申请号：PCT/SG2017/050291

申请日：2017-06-08

申请人： AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH

发明人： CHANG, Ka Fai ,  HAN, Yong ,  HO, David Soon Wee ,  LIM, Ying Ying

IPC分类号： H01L23/66 ,  H01L23/52 ,  H01Q23/00 ,  H01L23/31 ,  H05K1/02

摘要： Various embodiments may provide a semiconductor package. The semiconductor package may include a semiconductor chip, a first mold compound layer at least partially covering the semiconductor chip, and a redistribution layer over the first mold compound layer, the redistribution layer including one or more electrically conductive lines in electrical connection with the semiconductor chip. The semiconductor package may additionally include a second mold compound layer over the redistribution layer, and an antenna array over the second mold compound layer, the antenna array configured to be coupled to the one or more electrically conductive lines.

摘要翻译： 各种实施例可以提供半导体封装。 半导体封装可以包括半导体芯片，至少部分地覆盖半导体芯片的第一模制化合物层以及在第一模制化合物层上的再分布层，再分布层包括与半导体芯片电连接的一个或多个导电线 。 半导体封装可以另外包括在再分布层之上的第二模制化合物层和在第二模制化合物层之上的天线阵列，天线阵列被配置为耦合到一个或多个导电线。

公开(公告)号：WO2017123332A1

公开(公告)日：2017-07-20

申请号：PCT/US2016/063973

申请日：2016-11-29

申请人： QUALCOMM INCORPORATED

发明人： GU, Shiqun ,  ZUO, Chengjie ,  FANELLI, Steve ,  GEE, Thomas ,  SONG, Young Kyu

IPC分类号： H01L23/66 ,  H01L21/768 ,  H01L23/522 ,  H01L49/02

CPC分类号： H04B1/48 ,  H01L21/76251 ,  H01L21/76898 ,  H01L21/84 ,  H01L23/481 ,  H01L23/5223 ,  H01L23/5227 ,  H01L23/60 ,  H01L23/66 ,  H01L27/1203 ,  H01L28/00 ,  H01L28/10 ,  H01L28/60 ,  H01L29/0649 ,  H01L2223/6672 ,  H01L2223/6677

摘要： An integrated radio frequency (RF) circuit structure may include a resistive substrate material and a switch. The switch may be arranged in a silicon on insulator (SOI) layer supported by the resistive substrate material. The integrated RF circuit structure may also include an isolation layer coupled to the SOI layer. The integrated RF circuit structure may further include a filter, composed of inductors and capacitors. The filter may be arranged on a surface of the integrated RF circuit structure, opposite the resistive substrate material. In addition, the switch may be arranged on a first surface of the isolation layer.

摘要翻译： 集成射频（RF）电路结构可以包括电阻衬底材料和开关。 开关可以布置在由电阻基底材料支撑的绝缘体上硅（SOI）层上。 集成RF电路结构还可以包括耦合到SOI层的隔离层。 集成RF电路结构还可以包括由电感器和电容器组成的滤波器。 滤波器可以布置在集成RF电路结构的与电阻基底材料相对的表面上。 另外，开关可以布置在隔离层的第一表面上。

公开(公告)号：WO2016180920A8

公开(公告)日：2017-01-19

申请号：PCT/EP2016060667

申请日：2016-05-12

申请人： AMPLEON NETHERLANDS B V

发明人： CUOCO VITTORIO ,  VOLKHINE YOURI ,  ZHU YI ,  VAN DER ZANDEN JOSEPHUS ,  WALESIENIUK ANNA

IPC分类号： H03H7/38 ,  H01L23/495 ,  H01L23/498 ,  H01L23/66

CPC分类号： H03H7/383 ,  H01L23/047 ,  H01L23/66 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/49175 ,  H01L2924/19107 ,  H01L2924/00014

摘要： An integrated circuit package is provided. The integrated circuit package comprises a first guard bond wire (410) and second guard bond wire (420). The first guard bond wire (410) has a first end (411) coupled to ground and a second end (412) coupled to ground. The second guard bond wire (420) has a first end (421) coupled to ground and a second end (422) coupled to ground. The integrated circuit package further comprises a die (101). The die (101) is mounted between the first and second guard bond wires such that the first and second guard bond wires distort a magnetic field between at least an input terminal and an output terminal of the die to provide impedance matching.

摘要翻译： 提供集成电路封装。 集成电路封装包括第一保护接合线（410）和第二保护接合线（420）。 第一保护接合线（410）具有耦合到地的第一端（411）和耦合到地的第二端（412）。 第二保护接合线（420）具有耦合到地的第一端（421）和耦合到地的第二端（422）。 集成电路封装还包括管芯（101）。 模具（101）安装在第一和第二保护接合线之间，使得第一和第二保护接合线在芯片的至少输入端子和输出端子之间扭曲磁场，以提供阻抗匹配。

公开(公告)号：WO2016195826A1

公开(公告)日：2016-12-08

申请号：PCT/US2016/027962

申请日：2016-04-15

申请人： QUALCOMM INCORPORATED

发明人： HE, Xiaoyin ,  APARIN, Vladimir ,  TASSOUDJI, Mohammad Ali ,  BURKE, Joseph Patrick ,  DUNWORTH, Jeremy Darren

IPC分类号： H04B1/44 ,  H01L23/66 ,  H01L25/065 ,  H01Q1/22 ,  H04B1/04 ,  H04B1/18

CPC分类号： H03F3/211 ,  H01L23/66 ,  H01L25/0655 ,  H01Q1/2283 ,  H01Q21/065 ,  H03F3/19 ,  H03F2200/294 ,  H03F2200/451 ,  H04B1/0458 ,  H04B1/18 ,  H04B1/44

摘要： Various aspects of the present disclosure provide an apparatus for wireless communication. The apparatus may include an integrated circuit, an antenna, and a module located adjacent to the antenna. The module may include at least one of a power amplifier or a low-noise amplifier. The power amplifier may be configured to amplify a signal received from the integrated circuit for transmission by the antenna. The low-noise amplifier may be configured to amplify a signal received from the antenna for reception by the integrated circuit. The module may be separate from the integrated circuit. A length of a feed line connecting the antenna and the module may be less than a length of a feed line connecting the module and the integrated circuit. The module may also include a switching mechanism configured to switch operation of the module between transmission and reception.

摘要翻译： 本公开的各个方面提供了一种用于无线通信的装置。 该装置可以包括集成电路，天线和与天线相邻的模块。 模块可以包括功率放大器或低噪声放大器中的至少一个。 功率放大器可以被配置为放大从集成电路接收的信号以供天线传输。 低噪声放大器可以被配置为放大从天线接收的信号，以便由集成电路接收。 该模块可以与集成电路分离。 连接天线和模块的馈线的长度可以小于连接模块和集成电路的馈线的长度。 模块还可以包括被配置为在发送和接收之间切换模块的操作的切换机制。

公开(公告)号：WO2015153009A1

公开(公告)日：2015-10-08

申请号：PCT/US2015/016889

申请日：2015-02-20

申请人： MARVELL WORLD TRADE LTD. ,  LEONG, Poh Boon ,  LOO, Hou Xian ,  SUTARDJA, Sehat ,  DING, Wei ,  NGUYEN, Huy Thong

发明人： LEONG, Poh Boon ,  LOO, Hou Xian ,  SUTARDJA, Sehat ,  DING, Wei ,  NGUYEN, Huy Thong

IPC分类号： H01L23/64 ,  H01F17/00 ,  H01L23/66 ,  H01L25/16

CPC分类号： H01L23/5227 ,  H01F27/28 ,  H01L23/49827 ,  H01L23/5221 ,  H01L23/5226 ,  H01L23/645 ,  H01L23/66 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/48 ,  H01L24/94 ,  H01L25/16 ,  H01L2223/6672 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16265 ,  H01L2224/17051 ,  H01L2224/17181 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/19107 ,  H03H7/42 ,  H05K1/0213 ,  H05K1/0233 ,  H05K1/181 ,  H05K2201/1003 ,  H01L2924/014 ,  H01L2224/45099 ,  H01L2224/81

摘要： A circuit including a die and an integrated passive device. The die includes a first substrate and at least one active device. The integrated passive device includes a first layer, a second substrate, a second layer and an inductance. The inductance includes vias, where the vias are implemented in the second substrate. The inductance is implemented on the first layer, the second substrate, and the second layer. A resistivity per unit area of the second substrate is greater than a resistivity per unit area of the first substrate. A third layer is disposed between the die and the integrated passive device. The third layer includes pillars, where the pillars respectively connect ends of the inductance to the at least one active device. The die, the integrated passive device and the third layer are disposed relative to each other to form a stack.

摘要翻译： 包括管芯和集成无源器件的电路。 管芯包括第一衬底和至少一个有源器件。 集成无源器件包括第一层，第二衬底，第二层和电感。 电感包括通孔，其中通孔被实施在第二基板中。 电感实现在第一层，第二衬底和第二层上。 第二基板的每单位面积的电阻率大于第一基板的每单位面积的电阻率。 第三层设置在管芯和集成无源器件之间。 第三层包括支柱，其中支柱分别将电感的端部连接到至少一个有源装置。 芯片，集成无源器件和第三层相对于彼此设置以形成堆叠。

公开(公告)号：WO2015127207A1

公开(公告)日：2015-08-27

申请号：PCT/US2015/016823

申请日：2015-02-20

申请人： MARVELL WORLD TRADE LTD. ,  LEONG, Poh Boon ,  WU, Albert ,  WANG, Long-Ching ,  SUTARDJA, Sehat

发明人： LEONG, Poh Boon ,  WU, Albert ,  WANG, Long-Ching ,  SUTARDJA, Sehat

IPC分类号： H01L23/66 ,  H01L25/16 ,  H01L49/02

CPC分类号： H04B1/40 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49503 ,  H01L23/49575 ,  H01L23/645 ,  H01L23/66 ,  H01L24/17 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L25/16 ,  H01L25/162 ,  H01L25/50 ,  H01L28/10 ,  H01L2223/6644 ,  H01L2223/6672 ,  H01L2223/6677 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16265 ,  H01L2224/32145 ,  H01L2224/32265 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49 ,  H01L2224/73204 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/102 ,  H01L2924/10253 ,  H01L2924/1304 ,  H01L2924/13091 ,  H01L2924/1421 ,  H01L2924/19011 ,  H01L2924/19103 ,  H04B1/00 ,  H04B15/04 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00

摘要： A circuit including a first die, an integrated passive device and a second layer. The first die includes a first substrate and active devices. The integrated passive device includes a first layer, a second substrate and passive devices. The second substrate includes vias. The passive devices are implemented at least on the first layer or the second substrate. A resistivity per unit area of the second substrate is greater than a resistivity per unit area of the first substrate. The second layer is disposed between the first die and the integrated passive device. The second layer includes pillars. Each of the pillars connects a corresponding one of the active devices to (i) one of the vias, or (ii) one of the passive devices. The first die, the integrated passive device and the second layer are disposed relative to each other to form a stack.

摘要翻译： 包括第一管芯，集成无源器件和第二层的电路。 第一管芯包括第一衬底和有源器件。 集成无源器件包括第一层，第二衬底和无源器件。 第二衬底包括通孔。 无源器件至少在第一层或第二基板上实现。 第二基板的每单位面积的电阻率大于第一基板的每单位面积的电阻率。 第二层设置在第一管芯和集成无源器件之间。 第二层包括支柱。 每个支柱将相应的一个有源器件连接到（i）过孔中的一个，或（ii）无源器件中的一个。 第一管芯，集成无源器件和第二层相对于彼此设置以形成堆叠。

公开(公告)号：WO2015000597A9

公开(公告)日：2015-03-26

申请号：PCT/EP2014001826

申请日：2014-07-02

申请人： ROSENBERGER HOCHFREQUENZTECH

发明人： CAHILL SEAN S ,  SANJUAN ERIC A

IPC分类号： H01L23/40 ,  H01L23/50 ,  H01L23/66

CPC分类号： H01L23/4952 ,  H01L23/49861 ,  H01L23/50 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/85 ,  H01L2223/6611 ,  H01L2224/45015 ,  H01L2224/45565 ,  H01L2224/4569 ,  H01L2224/48011 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/4903 ,  H01L2224/8501 ,  H01L2224/85444 ,  H01L2224/8592 ,  H01L2224/8593 ,  H01L2224/85931 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/30111 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2224/45099 ,  H01L2924/00

摘要： A die package having mixed impedance leads where a first lead has a first metal core (130), and a dielectric layer surrounding the first metal core (130), and a second lead has a second metal core, and a second dielectric layer (132) surrounding the second metal core, with the dielectric thicknesses differing from each other. A method of making a die package having leads with different impedances formed by cleaning die substrate connection pads (162), connecting the die package to the die substrate connection pads via a first wirebond having a first diameter metal core (164), depositing at least one layer of dielectric on the wirebond metal core (170), metalizing the at least one layer of dielectric (174), connecting the die package to the die substrate connection pads via a second wirebond having a second diameter metal core, depositing at least one layer of dielectric on the second wirebond second diameter metal core, and metalizing the at least one layer of dielectric on the second diameter metal core, such that the first wirebond has a different impedance than the second wirebond.

摘要翻译： 一种具有混合阻抗导线的管芯封装，其中第一引线具有第一金属芯（130）和围绕第一金属芯（130）的介电层，第二引线具有第二金属芯和第二电介质层（132） ）围绕第二金属芯，其电介质厚度彼此不同。 一种制造具有通过清洁管芯衬底连接焊盘（162）形成的具有不同阻抗的引线的管芯封装的方法，通过具有第一直径金属芯（164）的第一引线键将管芯封装连接到管芯衬底连接焊盘，至少沉积 在引线键合金属芯（170）上的一层电介质，使至少一层电介质（174）金属化，通过具有第二直径金属芯的第二引线键将管芯封装连接到管芯衬底连接焊盘，沉积至少一个 在所述第二引线键合第二直径金属芯上的电介质层，以及使所述第二直径金属芯上的所述至少一层电介质金属化，使得所述第一引线键具有与所述第二引线键不同的阻抗。

公开(公告)号：WO2015000593A1

公开(公告)日：2015-01-08

申请号：PCT/EP2014/001822

申请日：2014-07-02

申请人： ROSENBERGER HOCHFREQUENZTECHNIK GMBH & CO. KG

发明人： CAHILL, Sean, S. ,  SANJUAN, Eric, A.

IPC分类号： H01L21/56 ,  H01L23/50 ,  H01L23/49 ,  H01L23/66

CPC分类号： H01L24/48 ,  H01L21/568 ,  H01L23/4952 ,  H01L23/64 ,  H01L24/49 ,  H01L2223/6611 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4903 ,  H01L2224/85001 ,  H01L2224/8592 ,  H01L2224/85931 ,  H01L2224/85935 ,  H01L2224/85939 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/85399

摘要： The present invention relates to die packages (10) comprising a die (30) having a plurality of connection pads, a plurality of wire leads (12, 14) having metal cores (18) with a defined core diameter, and a dielectric layer (16) surrounding the metal cores having a defined dielectric thickness, at least one first connection pad (34) held in a mold compound (35) covering the die (30) and the plurality of leads (12, 14) connected to at least one metal core (18), and at least one second connection pad (33) held in the mold compound (35) covering the die (30) and the plurality of leads (12, 14) connected to at least one metal core (18). Further, the present invention relates to a method for manufacturing a substrate less die package.

摘要翻译： 本发明涉及包括具有多个连接焊盘的管芯（30）的管芯封装（10），具有限定的芯直径的金属芯（18）的多个引线引线（12,14）和介电层（ 16）围绕具有限定的电介质厚度的金属芯，至少一个保持在覆盖模具（30）的模具化合物（35）中的第一连接垫（34）和连接到至少一个的多个引线（12,14） 金属芯（18）和保持在覆盖模具（30）的模具化合物（35）中的至少一个第二连接垫（33）和连接到至少一个金属芯（18）的多个引线（12,14） 。 此外，本发明涉及一种用于制造基板少量封装的方法。

公开(公告)号：WO2014145623A1

公开(公告)日：2014-09-18

申请号：PCT/US2014/030419

申请日：2014-03-17

申请人： RF MICRO DEVICES, INC.

发明人： MAXIM, George ,  SCOTT, Baker ,  TSAI, Ming ,  SHIRVANI, Alireza

IPC分类号： H03F3/195 ,  H03F3/189 ,  H03F1/14 ,  H01L23/66 ,  H03F1/56 ,  H03F1/34

CPC分类号： H03F3/193 ,  H01L23/49822 ,  H01L23/49827 ,  H01L23/66 ,  H01L24/16 ,  H01L2223/6644 ,  H01L2224/16225 ,  H03F1/14 ,  H03F1/347 ,  H03F1/565 ,  H03F3/195 ,  H03F2200/451

摘要： This disclosure relates generally to radio frequency (RF) amplification devices and methods of operating the same. In one embodiment, an RF amplification device includes an RF amplification circuit and a stabilizing transformer network. The RF amplification circuit defines an RF signal path and is configured to amplify an RF signal propagating in the RF signal path. The stabilizing transformer network is operably associated with the RF signal path defined by the RF amplification circuit. Furthermore, the stabilizing transformer network is configured to reduce parasitic coupling along the RF signal path of the RF amplification circuit as the RF signal propagates in the RF signal path. In this manner, the stabilizing transformer network allows for inexpensive components to be used to reduce parasitic coupling while allowing for smaller distances along the RF signal path.

摘要翻译： 本公开一般涉及射频（RF）放大装置及其操作方法。 在一个实施例中，RF放大装置包括RF放大电路和稳定变压器网络。 RF放大电路定义RF信号路径并且被配置为放大在RF信号路径中传播的RF信号。 稳定变压器网络与由RF放大电路限定的RF信号路径可操作地相关联。 此外，稳定变压器网络被配置为当RF信号在RF信号路径中传播时减小沿着RF放大电路的RF信号路径的寄生耦合。 以这种方式，稳定变压器网络允许使用便宜的部件来减少寄生耦合，同时允许沿着RF信号路径的较小的距离。