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    METHOD AND DEVICE FOR THE ALTERNATING CONTACTING OF TWO WAFERS
    3.
    发明申请
    METHOD AND DEVICE FOR THE ALTERNATING CONTACTING OF TWO WAFERS 审中-公开
    方法和设备相互接触两块基板

    公开(公告)号：WO2005055288A3

    公开(公告)日：2006-02-02

    申请号：PCT/DE2004002648

    申请日：2004-12-02

    Applicant: PAC TECH GMBH ,  ZAKEL ELKE ,  AZDASHT GHASSEM

    Inventor： ZAKEL ELKE ,  AZDASHT GHASSEM

    IPC: H01L23/10 ,  H01L21/50 ,  H01L21/60 ,  H01L21/98 ,  H01L25/065 ,  H01S5/02 ,  H01S5/042 ,  H01S5/40

    CPC classification number: H01L23/10 ,  B23K26/0063 ,  B23K35/262 ,  B23K35/3013 ,  B23K2201/40 ,  H01L21/50 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16 ,  H01L2924/01079

    Abstract: A method and device for the alternating contacting of two wafer-type component composite arrangements (12,14) from a plurality of connected similar components, particularly a semiconductor wafer with a functional component wafer, for the production of electronic modules on a wafer plane, wherein the two component composite arrangements provided with contact metallizations respectively on the opposite-lying contact surfaces (38,39) thereof are pressed against each other in order to form contact pairs with the contact metallizations thereof and the contacting of the contact metallizations occurs by backward impingement of one compound composite arrangement (12) with laser radiation, wherein the wavelength of the laser radiation is selected according to the absorption degree of the backwardly impinged upon component-composite arrangement such that transmission of the laser radiation by the backwardly impinged upon component-composite arrangement is substantially prohibited or absorption of the laser radiation occurs essentially in the contact metallizations of one or both component-composite arrangements. .

    Abstract translation: 方法和装置的多个连续的相同部件形成的，特别是具有官能组分晶片的半导体晶片，以产生在晶片级的电子组件的两个晶片载型元件复合组件（12，14），其中，或相互接触 所述带来两个在每种情况下其用于与被压在其中的覆盖物位置的接触金属化形成接触对设置有接触金属成分复合组件相互面对的接触表面（38，39）上进行接触金属化结合在一起对彼此和接触金属化的由后接触 进行用激光辐射（20），其中，所述激光辐射的依赖波长上向后施加部件的吸收度Ve的将所述一个部件的复合组件（12） 被选择rbundanordnung因此省略了激光辐射的传输，或由后作用组分复合结构基本上发生在基本上一个的接触金属化或两个组分复合结构的激光辐射的吸收。

    SOLDER SPHERE FEEDING DEVICE
    5.
    发明申请
    SOLDER SPHERE FEEDING DEVICE 审中-公开
    LOTKUGELZUFÜHREINRICHTUNG

    公开(公告)号：WO2016008939A2

    公开(公告)日：2016-01-21

    申请号：PCT/EP2015066194

    申请日：2015-07-15

    Applicant: PAC TECH GMBH

    Inventor： AZDASHT GHASSEM

    IPC: B23K1/00

    CPC classification number: B23K3/0623 ,  B23K1/0016 ,  B23K2201/42 ,  H05K3/3478 ,  H05K2203/041

    Abstract: The invention relates to a solder sphere feeding device (40) comprising a solder sphere reservoir (20) for receiving a quantity of solder spheres and a metering device (31) for dispensing a metered quantity of solder spheres (16) to a delivery device, wherein the metering device comprises an ultrasonic system (32) and a dispensing mouthpiece (21) with a dispensing tubule (43), the ultrasonic system applies vibrations to the dispensing mouthpiece, and the solder sphere reservoir or the dispensing mouthpiece of the solder sphere reservoir is provided with a pressure line (23) for injecting a gas under pressure into the solder sphere feeding device.

    Abstract translation: 本发明涉及一种Lotkugelzuführeinrichtung（40）包括一个Lotkugelreservoir（20），用于接收Lotkugelmenge和计量装置（31）用于分配焊球（16）的供给的计量数量的去除装置，其中，计量装置，超声波装置（32）和输出接口管 （21）与分配套管（43），其中，用于对所述输出接口管超声波装置用于振动和Lotkugelreservoir或Lotkugelreservoirs的与压力连接（23）的输出喷嘴设置，其用于引入加压气体进入Lotkugelzuführeinrichtung ，

    METHOD AND DEVICE FOR THE ELECTRICAL BONDING OF CONNECTION AREAS OF TWO SUBSTRATES BY LASER SOLDERING USING A GASEOUS FLUX MEDIUM
    6.
    发明申请
    METHOD AND DEVICE FOR THE ELECTRICAL BONDING OF CONNECTION AREAS OF TWO SUBSTRATES BY LASER SOLDERING USING A GASEOUS FLUX MEDIUM 审中-公开
    方法和装置用于电连接的接触两块基板表面用激光焊锡与气态流体流量的应用

    公开(公告)号：WO2012103868A3

    公开(公告)日：2012-09-27

    申请号：PCT/DE2012000068

    申请日：2012-01-30

    Applicant: PAC TECH GMBH ,  AZDASHT GHASSEM

    Inventor： AZDASHT GHASSEM

    IPC: H01L21/60 ,  H01L21/67

    CPC classification number: B23K1/0056 ,  B23K26/02 ,  B23K35/362 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/16221 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/75263 ,  H01L2224/81065 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/8191 ,  H01L2224/81986 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/00

    Abstract: The present invention relates to a method for the electrical bonding of connection areas of two substrates (6, 7), more particularly of a chip (6) and of a carrier substrate (7), two wafers or a plurality of superposed chips and a substrate. The method according to the invention is performed in two successive phases, in a first phase, the chip (6) being positioned with its connection areas against connection areas of the substrate (7) and rearward application of laser energy (5) to the chip (6), and, in a subsequent second phase, in a housing (3), a flux medium (for example a nitrogen-formic acid mixture) being applied and at the same time a reflow being performed by means of rearward application of laser energy (5) to the chip (6), and a process of purging the housing interior subsequently being performed. The invention also concerns a device for performing the second phase of the method according to the invention. The device according to the invention for performing the second phase of the method comprises a support table (1) and a housing (3), which together with a top of the support table (1) forms a housing interior, in which the component arrangement is positioned, and a laser light source (5), which is oriented such that the laser radiation impinges on the first substrate (6) on the rear side.

    Abstract translation: 本发明涉及一种用于电接触两块基板（6,7）的连接表面，特别是芯片（6）和支撑衬底（7），两个晶片或多个堆叠的芯片和基板的。 本发明的方法是在两个连续的阶段，其中，在所述芯片的第一相（6），其相对于基板的焊盘垫（7）定位，并用激光能携带的芯片（6）的背面曝光以进行（5）和下面 第二阶段中，流动介质的应用程序（例如，氮气甲酸混合物）和回流，随后由壳体内部的冲洗是在壳体（3）由芯片（6）的激光能量（5）的后部装载同时进行为好。 此外，本发明涉及一种用于实施本发明方法的第二阶段的设备。 用于执行该方法的第二阶段中的本发明的装置包括一个支撑台（1）和壳体（3）与所述支撑台（1）的壳体的内部，其中，所述部件布置被定位的一顶部和一激光光源（5）一起形成， 其被定向成使得激光辐射返回到所述第一衬底（6）适用。

    METHOD AND DEVICE FOR ELECTRICALLY CONTACT-CONNECTING CONNECTION AREAS OF TWO SUBSTRATES
    7.
    发明申请
    METHOD AND DEVICE FOR ELECTRICALLY CONTACT-CONNECTING CONNECTION AREAS OF TWO SUBSTRATES 审中-公开
    方法和设备两块基板的电气连接接触面

    公开(公告)号：WO2012103868A2

    公开(公告)日：2012-08-09

    申请号：PCT/DE2012000068

    申请日：2012-01-30

    Applicant: PAC TECH GMBH ,  AZDASHT GHASSEM

    Inventor： AZDASHT GHASSEM

    IPC: H01L21/60

    CPC classification number: B23K1/0056 ,  B23K26/02 ,  B23K35/362 ,  H01L24/16 ,  H01L24/75 ,  H01L24/81 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/16145 ,  H01L2224/16221 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/75263 ,  H01L2224/81065 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81193 ,  H01L2224/81224 ,  H01L2224/81815 ,  H01L2224/81907 ,  H01L2224/8191 ,  H01L2224/81986 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/00

    Abstract: The present invention relates to a method for electrically contact-connecting connection areas of two substrates (6, 7), more particularly of a chip (6) and of a carrier substrate (7). Furthermore, the invention relates to a device for performing a second phase of the method according to the invention. The method according to the invention is effected in two successive phases, wherein, in a first phase, the chip (6) is positioned with its connection areas against connection areas of the substrate (7) and laser energy (5) is applied to the chip (6) at the rear and, in a subsequent second phase, in a housing (3), a flux medium is applied and at the same time a reflow is performed by means of laser energy (5) being applied to the chip (6) at the rear, and a process of purging the housing interior is subsequently performed. The device according to the invention for performing a second phase of the method comprises a carrier table (1) and a housing (3), which together with a top side of the carrier table (1) forms a housing interior, in which the component arrangement is positioned, and also a laser light source (5), which is oriented in such a way that the laser radiation impinges on the first substrate (6) on the rear side.

    Abstract translation: 本发明涉及一种用于电接触两块基板（6,7）的连接表面，特别是芯片（6）和支撑衬底（7）。 此外，本发明涉及一种用于实施本发明方法的第二阶段中的装置，本发明的方法是在两个连续的阶段进行，其中，在所述芯片（6）以其垫相对于基板的焊盘的第一阶段（7）定位和后冲击 激光能量（5）（6），并且在一个壳体（3）在由流动介质和同时回流用激光能量作用由芯片（6）的后部装载随后的第二阶段（5），然后漂洗进行的芯片的 壳体内部被执行。 用于实施该方法的第二阶段中的本发明的装置包括一个支撑台（1）和壳体（3）与所述支撑台的顶部一起形成（1）的壳体的内部，其中，所述部件布置被定位和一个激光光源（5）， 其被定向成使得激光辐射返回到所述第一衬底（6）适用。

    METHOD AND DEVICE FOR FORMING SOLDER DEPOSITS ON RAISED CONTACT METALLIZATION STRUCTURES
    8.
    发明申请
    METHOD AND DEVICE FOR FORMING SOLDER DEPOSITS ON RAISED CONTACT METALLIZATION STRUCTURES 审中-公开
    方法和设备训练对升高的接触焊料沉积物

    公开(公告)号：WO2011127907A3

    公开(公告)日：2012-05-31

    申请号：PCT/DE2011000394

    申请日：2011-04-13

    Applicant: PAC TECH GMBH ,  AZDASHT GHASSEM

    Inventor： AZDASHT GHASSEM

    IPC: H01L21/60 ,  B23K3/06 ,  H01L21/683 ,  H01L23/485

    CPC classification number: B23K1/20 ,  B23K1/0056 ,  B23K3/06 ,  B23K3/0607 ,  H01L21/6835 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/742 ,  H01L2224/0401 ,  H01L2224/11002 ,  H01L2224/11003 ,  H01L2224/11822 ,  H01L2224/13099 ,  H01L2224/7515 ,  H01L2924/00 ,  H01L2924/00013 ,  H01L2924/01058 ,  H01L2924/01068 ,  H01L2924/014 ,  H01L2924/12042

    Abstract: The invention relates to a method for forming solder deposits (34) on raised contact metallization structures (24) of connection surfaces (23) of a substrate (19) designed in particular as a semiconductor component, wherein wetting surfaces (26) of the contact metallization structures (24) are brought in contact with a solder material layer (15) arranged on a solder material carrier (13), the substrate (19) is heated and the temperature of the solder material layer (15) is controlled at least during the duration of the contact, and subsequently the contact metallization structures (24) wetted with solder material (34) and the solder material layer (15) are separated, thus making it possible to prevent the formation of contact bridges between adjoining contact metallization structures (24) resulting from the surface tension of fused solder material when the wetting surfaces (26) of the contact metallization structures (24) and the solder material layer (15) are separated.

    Abstract translation: 本发明涉及一种用于在基板的垫的升高的接触（24）（23）上形成焊料沉积物（34），特别是形成为半导体装置（19），其中，在物理接触的接触金属化（24）的润湿表面（26）与一个上的一个 焊接材料（15）的布置焊接材料载体（13）被带到，至少衬底（19）和所述钎焊材料层的温度（15）的触摸接触加热的持续时间期间被执行，并且随后所述的触摸接触焊料材料的分离（34）润湿接触金属化 （24）和所述钎焊材料层（15）。 这可以防止它涉及在接触金属化（24）和所述钎焊材料层（15）的润湿表面（26）之间的触摸接触的分离由于熔融焊料材料的表面张力，以形成相邻的接触金属化（24）之间的接触桥。

    TEST CONTACT ARRANGEMENT
    9.
    发明申请
    TEST CONTACT ARRANGEMENT 审中-公开
    测试接触

    公开(公告)号：WO2009117992A3

    公开(公告)日：2009-12-30

    申请号：PCT/DE2009000393

    申请日：2009-03-27

    Applicant: PAC TECH GMBH ,  AZDASHT GHASSEM

    Inventor： AZDASHT GHASSEM

    IPC: G01R1/073 ,  G01R1/067

    CPC classification number: G01R1/07342 ,  G01R1/06727 ,  G01R1/06733

    Abstract: The invention relates to a test contact arrangement (15) for testing semiconductor components, comprising at least one test contact (10) arranged in a test contact frame (13) of the type of a cantilever arm, a fastening base (12) and a contact arm (30) which is provided with a contact tip (11) and connected to the fastening base. According to the invention, the fastening base is inserted with its fastening projection (16) into a frame opening (14) of the test contact frame in such a manner that a lower edge (17) of the fastening projection is essentially aligned flush with a lower side (18) of the test contact frame.

    Abstract translation: 本发明涉及一种具有安装底座（12）和连接到所述安装基座接触臂（30）的一部分与接触尖端的测试触点（15），用于与在测试接触的至少一个（13）的半导体器件的测试布置，在悬臂梁的接触探针（10）的方式构成 （11），其中，所述安装基座是用来与测试触点的框架开口（14）的附接突起（16）以这样的方式，即一个底边（17）与所述固定突起对准是与测试接触的下侧（18）大致齐平。

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