公开(公告)号：EP2796833A2

公开(公告)日：2014-10-29

申请号：EP14164623.2

申请日：2014-04-14

Applicant: Freescale Semiconductor, Inc.

Inventor： Geisberger, Aaron A. ,  Jia, Kemiao

IPC: G01C19/56 ,  G01C19/5656

CPC classification number: G01P15/0888 ,  B81C99/004 ,  B81C2201/0132 ,  G01B5/24 ,  G01C19/5656 ,  G01C19/5663 ,  G01C25/005

Abstract: An apparatus (36) includes a motion amplification structure (52), an actuator (54), and a sense electrode (50) in proximity to the structure (52). The actuator (54) induces an axial force (88) upon the structure (52), which causes a relatively large amount of in-plane motion (108) in one or more beams (58, 60) of the structure (52). When sidewalls (98) of the beams (58, 60) exhibit a skew angle (126), the in-plane motion (108) of the beams (58, 60) produces out-of-plane motion (110) of a paddle element (62) connected to the end of the beams (58, 60). The skew angle (126), which results from an etch process, defines a degree to which the sidewalls (98) of beams (58, 60) are offset or tilted from their design orientation. The out-of-plane motion (110) of element (62) is sensed at the electrode (50), and is utilized to determine an estimated skew angle (126).

Abstract translation: 装置（36）包括运动放大结构（52），致动器（54）和接近结构（52）的感测电极（50）。 致动器（54）在结构（52）上引起轴向力（88），这导致结构（52）的一个或多个梁（58,60）中的相对大量的面内运动（108）。 当梁（58,60）的侧壁（98）呈现歪斜角（126）时，梁（58,60）的面内运动（108）产生桨的平面外运动（110） 元件（62）连接到梁（58,60）的端部。 由蚀刻工艺产生的斜角（126）限定了梁（58,60）的侧壁（98）从其设计取向偏移或倾斜的程度。 元件（62）的平面外运动（110）在电极（50）处被感测，并被用于确定估计的偏斜角（126）。

公开(公告)号：EP2795671A1

公开(公告)日：2014-10-29

申请号：EP12821152.1

申请日：2012-12-21

Applicant: Micronit Microfluidics B.V.

Inventor： VAN 'T OEVER, Ronny ,  BLOM, Marko Theodoor ,  HANEVELD, Jeroen ,  OONK, Johannes ,  OLDE RIEKERINK, Marinus Bernardus ,  TIJSSEN, Peter ,  TIGELAAR, Hendrik Jan Hildebrand ,  FEHR, Jean-Noël ,  ROULET, Jean-Christophe ,  GUPTA, Amitava

IPC: H01L23/10 ,  B81C1/00 ,  H01L21/50

CPC classification number: B81C1/00269 ,  B81B2201/058 ,  B81C3/001 ,  B81C2201/0132 ,  B81C2203/0118 ,  B81C2203/019 ,  C23F1/02 ,  H01L21/50 ,  H01L23/10 ,  H01L2924/0002 ,  Y10T428/239 ,  H01L2924/00

Abstract: The invention relates to method for bonding at least two substrates, for example made from glass, silicon or ceramic, by using an intermediate thin film metal layer for providing the bonding, said method comprising the following steps of: a) providing said two substrates; b) depositing said thin film metal layer on at least a part of a surface of a first substrate of the two substrates; c) bringing a surface of the second substrate into contact with said thin film metal layer on said surface of the first substrate such that a bonding between the second substrate and the thin film metal layer on the first substrate is provided; and d) at least locally strengthening the bonding between the second substrate and the thin film metal layer on the first substrate. The invention also relates to a device comprising two substrates, for example made from glass, silicon or ceramic, and an intermediate thin film metal layer.

Abstract translation: 本发明涉及通过使用用于提供粘合的中间薄膜金属层来将至少两个基板（例如由玻璃，硅或陶瓷制成）接合的方法，所述方法包括以下步骤：a）提供所述两个基板; b）在所述两个基板的第一基板的表面的至少一部分上沉积所述薄膜金属层; c）使所述第二基板的表面与所述第一基板的所述表面上的所述薄膜金属层接触，从而提供所述第一基板上的所述第二基板与所述薄膜金属层之间的接合; 以及d）至少局部加强第一基板上的第二基板和薄膜金属层之间的接合。 本发明还涉及包括例如由玻璃，硅或陶瓷制成的两个基底和中间薄膜金属层的器件。

公开(公告)号：EP2727880A1

公开(公告)日：2014-05-07

申请号：EP12191327.1

申请日：2012-11-05

Applicant: GFD Gesellschaft für Diamantprodukte mbH ,  Diamaze Microtechnology S.A.

Inventor： Gluche, Peter ,  Gretzschel, Ralph

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/0078 ,  B81B2201/035 ,  B81B2203/0384 ,  B81C1/00103 ,  B81C1/00626 ,  B81C2201/0132 ,  B81C2201/0143 ,  G04B13/02 ,  G04B15/14

Abstract: Die Erfindung betrifft ein dreidimensionales, mikromechanisches Bauteil aus einem C- oder Si-enthaltenden Basismaterial oder aus Glaskeramiken oder aus Al-haltigen Glaskeramiken, das sich dadurch auszeichnet, dass in den Flanken eines derartigen Bauteils, ausgehend von mindestens einer Oberflächenkante mindestens einer Oberfläche, in der/den Seitenkante/n eine Fase angeordnet ist, die einen Winkel α 1 von 40° bis 65° aufweist. Die Erfindung betrifft weiterhin ein Verfahren zur Herstellung eines derartigen Bauteils, wobei das vorstrukturierte Bauteil auf einem Wafer bzw. über Haltestege in einem Wafer befestigt ist und die Fase durch Sputtern und/oder durch lonen- bzw. Plasmaätzen eingebracht wird.

Abstract translation: 由具有碳（C）或硅（Si），玻璃陶瓷或含铝玻璃陶瓷的基材制成的三维微机械部件。 倒角（41,42）以特定角度放置在表面的边缘。倒角具有特定的表面粗糙度。 由硅，二氧化硅（SiO 2），石英，碳化硅（SiC），金刚石，类金刚石碳（DLC）或由蓝宝石或红宝石制成的结晶金刚石构成的基材。 包括用于制造微机械部件的方法的独立权利要求。

公开(公告)号：EP2663520A2

公开(公告)日：2013-11-20

申请号：EP12700915.7

申请日：2012-01-13

Applicant: Cavendish Kinetics Inc.

Inventor： RENAULT, Mickael ,  LACEY, Joseph Damian Gordon ,  JOSHI, Vikram ,  MAGUIRE, Thomas L.

IPC: B81C1/00

CPC classification number: B81B3/0072 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2207/096 ,  B81C1/00039 ,  B81C1/00333 ,  B81C1/00476 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2203/0145 ,  B81C2203/0714

Abstract: The present invention generally relates to methods for producing MEMS or NEMS devices and the devices themselves. A thin layer of a material having a lower recombination coefficient as compared to the cantilever structure may be deposited over the cantilever structure, the RF electrode and the pull-off electrode. The thin layer permits the etching gas introduced to the cavity to decrease the overall etchant recombination rate within the cavity and thus, increase the etching rate of the sacrificial material within the cavity. The etchant itself may be introduced through an opening in the encapsulating layer that is linearly aligned with the anchor portion of the cantilever structure so that the topmost layer of sacrificial material is etched first. Thereafter, sealing material may seal the cavity and extend into the cavity all the way to the anchor portion to provide additional strength to the anchor portion.

公开(公告)号：EP2082990A3

公开(公告)日：2013-10-02

申请号：EP09150686.5

申请日：2009-01-15

Applicant: Honeywell International Inc.

Inventor： Carlson, Robert J.

IPC: B81B1/00

CPC classification number: B29C33/3842 ,  B29C41/00 ,  B29C59/14 ,  B29C59/16 ,  B29K2909/00 ,  B29K2995/0037 ,  B81B7/00 ,  B81B2201/05 ,  B81B2201/058 ,  B81B2203/0127 ,  B81C99/009 ,  B81C2201/0132 ,  B81C2201/0143 ,  B81C2201/034 ,  C23F1/02 ,  H01L21/30604 ,  Y10T428/24496

Abstract: The invention is directed to a patterned aerogel-based layer that serves as a mold for at least part of a microelectromechanical feature. The density of an aerogel is less than that of typical materials used in MEMS fabrication, such as poly-silicon, silicon oxide, single-crystal silicon, metals, metal alloys, and the like. Therefore, one may form structural features in an aerogel-based layer at rates significantly higher than the rates at which structural features can be formed in denser materials. The invention further includes a method of patterning an aerogel-based layer to produce such an aerogel-based mold. The invention further includes a method of fabricating a microelectromechanical feature using an aerogel-based mold. This method includes depositing a dense material layer directly onto the outline of at least part of a microelectromechanical feature that has been formed in the aerogel-based layer.

公开(公告)号：EP1800334A4

公开(公告)日：2012-07-04

申请号：EP05789502

申请日：2005-10-04

Applicant: SILVERBROOK RES PTY LTD

Inventor： MCREYNOLDS DARRELL LARUE ,  SILVERBROOK KIA

IPC: H01L21/3065 ,  B41J2/14 ,  B41J2/16 ,  B81C1/00 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L21/02057 ,  B41J2/1412 ,  B41J2/1601 ,  B41J2/1623 ,  B41J2/1628 ,  B41J2/1631 ,  B41J2/164 ,  B81B2201/052 ,  B81B2203/033 ,  B81C1/00849 ,  B81C2201/0112 ,  B81C2201/0132

公开(公告)号：EP1364398A4

公开(公告)日：2011-11-30

申请号：EP02708936

申请日：2002-01-02

Applicant: DRAPER LAB CHARLES S

Inventor： BORENSTEIN JEFFREY

IPC: H01L21/46 ,  B81C1/00 ,  C23F1/00

CPC classification number: B81C1/00119 ,  B81B2201/0235 ,  B81C1/00357 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2201/019 ,  B81C2201/0191

公开(公告)号：EP2263971A1

公开(公告)日：2010-12-22

申请号：EP09162292.8

申请日：2009-06-09

Applicant: Nivarox-FAR S.A.

Inventor： Cusin, Pierre ,  Thiébaud, Jean-Philippe

IPC: B81C99/00 ,  B29C33/38 ,  C25D1/10

CPC classification number: B81C99/008 ,  B81B3/0075 ,  B81B2201/035 ,  B81C1/00031 ,  B81C1/00087 ,  B81C1/00119 ,  B81C2201/0132 ,  B81C2201/032 ,  C25D1/003 ,  C25D1/20 ,  C25D5/022 ,  G04B13/022 ,  G04B13/026 ,  G04D3/0069

Abstract: L'invention se rapporte à un procédé de fabrication (1) d'une pièce de micromécanique composite (41, 41') comportant les étapes suivantes :
a) se munir (10) d'un substrat (9, 9') comportant une couche supérieure (21) et une couche inférieure (23) en matériau micro-usinable électriquement conductrices et solidarisées entre elles par une couche intermédiaire (22) électriquement isolante ;
b) graver selon au moins un motif (26) dans la couche supérieure (21) jusqu'à la couche intermédiaire (22) afin de former au moins une cavité (25) dans le substrat (9, 9') ;
c) recouvrir (16) la partie supérieure dudit substrat d'un revêtement (30) électriquement isolant ;
d) graver (18) de manière directionnelle ledit revêtement et ladite couche intermédiaire afin de limiter leur présence uniquement au niveau de chaque paroi verticale (51, 52) formée dans ladite couche supérieure ;
e) réaliser (5) une électrodéposition en connectant l'électrode à la couche conductrice inférieure (23) du substrat (9, 9') afin de former au moins une partie métallique (33, 43, 43') de ladite pièce ;
f) libérer la pièce composite (41, 41') du substrat (9, 9').
L'invention concerne le domaine des pièces de micromécanique notamment pour des mouvements horlogers.

Abstract translation: 该方法包括通过中间层蚀刻顶层（21）中的图案，以在基底中形成空腔。 衬底的顶部涂覆有电绝缘涂层。 定向蚀刻涂层和中间层，以限制在顶层中形成的每个垂直壁（52）处的涂层和中间层的存在。 通过将电极连接到基板的导电底层以形成复合部件（41）的金属部分来执行电沉积。 复合组分从基材上释放出来。 包括以下独立权利要求：（1）复合微机械部件; 和（2）钟表。

公开(公告)号：EP2252545A2

公开(公告)日：2010-11-24

申请号：EP09719665.3

申请日：2009-03-10

Applicant: Yeda Research And Development Company Ltd.

Inventor： NAAMAN, Ron ,  GOLAN, Ben ,  FRADKIN, Zeev ,  WINKLEMAN, Adam ,  ORON, Dan

IPC: B81C1/00

CPC classification number: B81C1/00206 ,  B81C1/00031 ,  B81C2201/0132 ,  B81C2201/115 ,  G03F7/40

Abstract: A method for fabrication of substrate having a nano-scale surface roughness is presented. The method comprises: patterning a surface of a substrate to create an array of spaced-apart regions of a light sensitive material; applying a controllable etching to the patterned surface, said controllable etching being of a predetermined duration selected so as to form a pattern with nano-scale features; and removing the light sensitive material, thereby creating a structure with the nano-scale surface roughness. Silanizing such nano-scale roughness surface with hydrophobic molecules results in the creation of super- hydrophobic properties characterized by both a large contact angle and a large tilting angle. Also, deposition of a photo-active material on the nano-scale roughness surface results in a photocathode with enhanced photoemission yield. This method also provides for fabrication of a photocathode insensitive to polarization of incident light.

公开(公告)号：EP2097349A2

公开(公告)日：2009-09-09

申请号：EP07866173.3

申请日：2007-12-20

Applicant: QUALCOMM MEMS Technologies, Inc.

Inventor： CUMMINGS, William, J.

IPC: B81C1/00 ,  H01L21/311

CPC classification number: B81C1/00579 ,  B81B2201/047 ,  B81C2201/0132 ,  Y10T428/24174

Abstract: A MEMS (Microelectromechanical system) device is described. The device includes a first layer (1115) on a substrate, and a sacrificial layer (1130) on or over the first layer (1115), the first sacrificial layer (1130) being configured to be removed in a removal procedure. The device also includes a second layer (1114) on or over the first sacrificial layer (1130), where the second layer (1114) is spaced apart from the first layer (1115), and a shorting element (1150) electrically connecting the first (1115) and second (1114) layers, where at least a portion (1170) of the shorting element is removable in the removal procedure.