公开(公告)号：EP2011132B1

公开(公告)日：2016-06-29

申请号：EP07755013.5

申请日：2007-04-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： RAY, Curtis, A. ,  BRYZEK, Janusz

IPC: B81B3/00 ,  G01L9/00 ,  G01P15/125

CPC classification number: G01L9/0073 ,  B81B3/0021 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  G01P15/0802 ,  G01P15/125 ,  G01P15/18 ,  G01P2015/0814 ,  G01P2015/0831 ,  G01P2015/084 ,  H01L28/40

公开(公告)号：EP3020684A1

公开(公告)日：2016-05-18

申请号：EP15194295.0

申请日：2015-11-12

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： NICOLAS, Stéphane

IPC: B81C1/00

CPC classification number: B81B7/0038 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/097 ,  B81C1/00285 ,  B81C2203/0109 ,  B81C2203/0118 ,  B81C2203/0145 ,  H01L2224/11

Abstract: Structure d'encapsulation (100) comportant :
- un capot (104) solidarisé à un premier substrat (102) et formant une cavité (108) entre le capot et le premier substrat ;
- une couche (110) d'un premier matériau perméable à un gaz, disposée dans le capot et/ou dans le premier substrat et/ou à l'interface entre le capot et le premier substrat, et formant une partie d'une paroi de la cavité ;
- une portion (112) d'un deuxième matériau non perméable audit gaz, dont l'épaisseur est supérieure ou égale à celle de la couche du premier matériau, et entourant au moins une première partie (116) de la couche du premier matériau formant ladite partie de la paroi de la cavité ;
- une ouverture (114) traversant le capot ou le premier substrat et débouchant sur ou dans ladite partie de la couche du premier matériau.

Abstract translation: 的包装结构，其包括：固定到所述至少一个第一衬底和形成在帽和所述第一基板之间的至少一个腔的帽; 至少一个第一材料层可渗透气体，在帽设置和/或在所述第一衬底和/或在所述帽和所述第一基板之间的界面，并形成在空腔的壁的至少一部分 ; 至少一种第二材料不渗透到所述气体的一部分，所有的厚度比高于或等于做的第一材料层，以及包围形成所述第一材料的所述层的至少一个第一部分 腔的壁的一部分; 到孔穿过帽或所述第一基片和开口传递之上或之中的第一材料的层的所述部分。

公开(公告)号：EP2707953B1

公开(公告)日：2016-04-13

申请号：EP12786090.6

申请日：2012-05-11

Applicant: Teknologian tutkimuskeskus VTT Oy

Inventor： PRUNNILA, Mika ,  JAAKKOLA, Antti ,  PENSALA, Tuomas

IPC: H03H9/02 ,  H03H9/24 ,  B81B3/00

CPC classification number: B81B3/0072 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0271 ,  B81C2201/0164 ,  B81C2201/0167 ,  B81C2201/0177 ,  G06F17/5045 ,  H03H9/02448 ,  H03H9/2447 ,  H03H2009/2442

公开(公告)号：EP2879986A4

公开(公告)日：2016-03-23

申请号：EP12882090

申请日：2012-07-31

Applicant: HEWLETT PACKARD DEVELOPMENT CO

Inventor： WALMSLEY ROBERT G ,  ZHANG ZHUQING ,  WU JENNIFER ,  BERNARD SHELDON A ,  CHOY SILAM J

IPC: B81B3/00 ,  B81B7/00 ,  B81C1/00 ,  G01P15/02 ,  G01P15/08

CPC classification number: H05K1/18 ,  B81B7/0048 ,  B81B2201/0235 ,  G01P15/0802 ,  H01L24/32 ,  H01L2224/32014 ,  H05K13/0469 ,  H05K2203/06 ,  Y10T156/10

Abstract: A device including a semiconductor, a substrate, and an interposer. The interposer is attached between the semiconductor and the substrate to absorb stresses between the semiconductor and the substrate.

公开(公告)号：EP2825825A4

公开(公告)日：2015-11-25

申请号：EP13761555

申请日：2013-03-12

Applicant: GORE & ASS

Inventor： HOLLIDAY ANDREW J

IPC: F24F7/00

CPC classification number: B81B7/0061 ,  B01D53/228 ,  B01D69/12 ,  B01D71/06 ,  B23B3/00 ,  B32B3/266 ,  B32B37/18 ,  B32B38/0004 ,  B81B7/0041 ,  B81B7/0058 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00293 ,  H04R1/28 ,  H04R25/456 ,  H04R2460/11 ,  Y10T156/1052 ,  Y10T428/24331

公开(公告)号：EP2910952A1

公开(公告)日：2015-08-26

申请号：EP12886642.3

申请日：2012-10-16

Applicant: Hitachi Automotive Systems, Ltd.

Inventor： YAMANAKA, Kiyoko ,  JEONG, Heewon ,  HAYASHI, Masahide

IPC: G01P15/125 ,  G01P21/00

CPC classification number: G01P15/125 ,  B81B3/0051 ,  B81B3/0072 ,  B81B2201/0235 ,  G01P1/006 ,  G01P15/0802 ,  G01P21/00 ,  G01P2015/0814

Abstract: A technique of preventing the function stop caused by false operation and false output of an inertial sensor by canceling a signal caused by applying of an acceleration other than a measurement signal before input to an LSI circuit is provided. An electrostatic-capacitance MEMS acceleration sensor 100 is configured to include: a movable unit 104; a P-side first electrode pair formed of a detection movable electrode 105a and a detection fixed electrode 106a; a P-side second electrode pair formed of a detection movable electrode 105b and a detection fixed electrode 106b; an N-side first electrode pair formed of a detection movable electrode 109a and a detection fixed electrode 110a; and an N-side second electrode pair formed of a detection movable electrode 109b and a detection fixed electrode 110b, the movable unit 104 is supported at one point of a fixed portion 101 arranged on an inner side of the movable unit 104, and besides, the fixed portion 101 of the movable unit 104, a fixed portion 107 of the detection fixed electrode 106a, a fixed portion 108 of the detection fixed electrode 106b, a fixed portion 111 of the detection fixed electrode 110a, and a fixed portion 112 of the detection fixed electrode 110b are arranged on a line 116 perpendicular to a detection direction 115 of the MEMS acceleration sensor 100, and besides, the P-side first electrode pair and the N-side first electrode pair are arranged on one side of the fixed portion 101 of the movable unit 104, and the P-side second electrode pair and the N-side second electrode pair are arranged on the other side thereof.

Abstract translation: 提供了一种技术，该技术通过消除在输入到LSI电路之前施加除了测量信号之外的加速度而引起的信号，来防止由惯性传感器的误操作和错误输出引起的功能停止。 静电电容式MEMS加速度传感器100被配置为包括：可移动单元104; 由检测用可动电极105a和检测用固定电极106a构成的P侧第一电极对， 由检测用可动电极105b和检测用固定电极106b构成的P侧第2电极对， 由检测用可动电极109a和检测用固定电极110a构成的N侧第一电极对， 以及由检测用可动电极109b和检测用固定电极110b构成的N侧第2电极对，将可动单元104支承在配置在可动单元104的内侧的固定部101的一点上， 可动部104的固定部101，检测用固定电极106a的固定部107，检测用固定电极106b的固定部108，检测用固定电极110a的固定部111以及固定部112 检测用固定电极110b配置在与MEMS加速度传感器100的检测方向115垂直的线116上，并且，P侧第1电极对和N侧第1电极对配置在固定部的一侧 可动单元104的第一电极101,101以及P侧第二电极对和N侧第二电极对配置在其另一侧。

公开(公告)号：EP2825825A1

公开(公告)日：2015-01-21

申请号：EP13761555.5

申请日：2013-03-12

Applicant: W. L. Gore & Associates, Inc.

Inventor： HOLLIDAY, Andrew, J.

IPC: F24F7/00

CPC classification number: B81B7/0061 ,  B01D53/228 ,  B01D69/12 ,  B01D71/06 ,  B23B3/00 ,  B32B3/266 ,  B32B37/18 ,  B32B38/0004 ,  B81B7/0041 ,  B81B7/0058 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81C1/00293 ,  H04R1/28 ,  H04R25/456 ,  H04R2460/11 ,  Y10T156/1052 ,  Y10T428/24331

Abstract: The invention relates to a vent array comprising a plurality of venting regions comprising a porous PTFE matrix material and a nonporous material comprising a substrate material having a plurality of perforations, wherein the substrate material fills the pores of a porous PTFE matrix material to form nonporous regions, the nonporous regions interconnecting the plurality of venting regions.

公开(公告)号：EP1695937B1

公开(公告)日：2014-10-08

申请号：EP05255278.3

申请日：2005-08-26

Applicant: HITACHI, LTD.

Inventor： Fukuda, Hiroshi, c/o Hitachi, Ltd. ,  Fujimori, Tsukasa, c/o Hitachi, Ltd. ,  Yokoyama, Natsuki, c/o Hitachi, Ltd. ,  Hanaoka, Yuko, c/o Hitachi, Ltd. ,  Matsumura, Takafumi, c/o Hitachi, Ltd.

IPC: B81B7/02 ,  B81B3/00

CPC classification number: B81C1/00246 ,  B81B2201/0235 ,  B81B2201/0264 ,  B81C2203/0714 ,  B81C2203/0742

Abstract: In the manufacturing technology of an integrated MEMS in which a semiconductor integrated circuit (CMOS or the like) and a micro machine are monolithically integrated on a semiconductor substrate, a technology capable of manufacturing the integrated MEMS without using a special process different from the normal manufacturing technology of a semiconductor integrated circuit is provided. A MEMS structure is formed together with an integrated circuit by using COMS integrated circuit process. For example, when forming an acceleration sensor, a structure composed of a movable mass (109), an elastic beam (110) and a fixed beam (111) is formed by using the CMOS interconnect technology. Thereafter, an interlayer dielectric (112) and the like are etched by using the CMOS process to form a cavity (115). Then, fine holes (113) used in the etching are sealed with a dielectric (116).

公开(公告)号：EP2778120A1

公开(公告)日：2014-09-17

申请号：EP12847351.9

申请日：2012-11-09

Applicant: U Electronics Co. Ltd.

Inventor： HAN, Yong Hee ,  KIM, Hyung Won ,  AHN, Mi Sook

IPC: B81C1/00 ,  B81B7/02 ,  G01P15/00 ,  H01L21/48

CPC classification number: B81B7/0038 ,  B81B7/007 ,  B81B2201/0207 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/096 ,  B81C1/00269 ,  B81C1/00285 ,  B81C2203/0118 ,  G01P15/0802 ,  H01L31/02016 ,  H01L2224/291 ,  H01L2924/014

Abstract: The present invention relates to a MEMS sensor packing and a method thereof. The MEMS sensor packaging includes: a first wafer on which on an ROIC circuit is disposed; a second wafer disposed to correspond to the first wafer and having a concave portion in one surface thereof to provide a MEMS sensor; a bonding solder disposed around the MEMS sensor to bond the first and second wafers to each other, thereby sealing the MEMS sensor; and a solder pad electrically connecting the ROIC circuit of the first wafer to the MEMS sensor of the second wafer. According to the present invention, when the wafer on which the ROIC circuit is disposed and the wafer on which the MEMS sensor is disposed are bonded to package the bonded wafers, the solder pad for electrically connecting the ROIC sensor to the MEMS sensor may be provided within the package to reduce the size of the package and stably supply an electrical signal.

公开(公告)号：EP2773586A2

公开(公告)日：2014-09-10

申请号：EP12790454.8

申请日：2012-11-02

Applicant: Continental Teves AG & Co. OHG

Inventor： GÜNTHNER, Stefan ,  SCHMID, Bernhard

IPC: B81B7/02 ,  B81C1/00 ,  G01D5/12

CPC classification number: G01P15/0888 ,  B81B7/02 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0264 ,  B81B2201/0278 ,  B81C1/0023 ,  Y10T29/49002

Abstract: The invention relates to a micromechanical element (123a), to a component (100) having a micromechanical element (123a), and to a method for producing a component (100). The micromechanical element (123a) comprises a plurality of individual sensor elements (1'a, 2'a, 3'a, 23a), wherein a first physical measurement variable can be measured by means of a first individual sensor element (1'a, 2'a, 3'a, 23a) and a second physical measurement variable can be measured by means of a second individual sensor element (1'a, 2'a, 3'a, 23a).