Abstract:
In a method of forming a metal film, an oxide film is removed on the surface of a nickel film using an aqueous solution of a reducing acid having a concentration of 2.0 to 10.0 mol/L, and then a different metal film is formed on the surface of the nickel film. The method of forming the metal film is useful in a process of manufacturing a multilayer printed circuit.
Abstract:
A circuit board (10) includes a substrate (11) having a heat exhausting function. A wiring layer (12, 230) of a metal composite material is provided on the substrate (11) with an insulating layer (13) in between. The metal composite material has a coefficient of thermal expansion that is greater than a coefficient of thermal expansion of a silicon semiconductor chip (18) and less than a coefficient of thermal expansion of copper. Accordingly, a circuit board that is suitable for mounting power devices, requires no heat sink or heat spreader is provides. Further, the number of components for assembling a module is reduced (Fig. 1A).
Abstract:
A signal connector assembly with a plug contact (7) within a plug (6) having a high resistive portion (12). When each contact (7) of the assembly first makes contact with an associated electrical contact (15) within a mating receptacle (8), the high resistive portion (12) prevents a voltage surge. As the plug (6) is further inserted into the receptacle (8), the energy passing from the plug (6) to the receptacle (8) is gradually increased. Eventually, the receptacle contacts (15) within the receptacle (8) pass the high resistive portions (12) of the plug contacts (7) and make contact with conductive portions (14) of the plug contacts (7), thereby permitting transmission of valid signals without the generation of spurious errors.
Abstract:
A circuit board material (10) is disclosed which includes a support layer (12), at least one electrical resistance layer (14) having a preselected resistivity adhered to the support layer (12), a barrier layer (16) adhered to the electrical resistance layer (14), and a conductive layer (18) adhered to the barrier layer (16). The barrier layer (16) is capable of protecting the resistance layer (14) from attack by alkaline ammoniacal copper etchants. A method of producing the circuit board material (10) is also disclosed.
Abstract:
A circuit substrate for mounting a semiconductor element having an aluminum-copper clad foil laminated on a metallic base plate by interposing an insulating layer, characterized in that the roughness in average of a surface of the aluminum foil included in the aluminum-copper clad foil, which surface is in contact with the insulating layer, is in a range of from 0.5 µm to 50 µm; and the roughness of another surface of the aluminum foil, which surface is opposite to said surface being in contact with the insulating layer, is 10 µm or less.
Abstract:
A process for the etching of multiple layers of at least two different metals, for instance a first layer of copper and a second layer of aluminium, comprises: forming a resist (10) pattern over a first layer (18) of metal, said resist pattern having a pattern of openings (14) therein, applying a first etch solution onto said resist pattern so that at least some etch solution contacts exposed areas of the first layer of metal, etching away the majority of the depth of the first metal in exposed areas of metal in the first layer of metal, applying a second etch solution onto the resist pattern the second etch solution having a rate of etch towards the first metal as compared to the first etch solution that is at least 20% less than the millimeter/minute rate of etch of the first etch solution at the same etch solution temperature, removing the second etch solution from said resist pattern after at least the first metal layer has been etched sufficiently to expose areas of a second metal layer (6) underlying the first metal layer (8) by forming an etched first metal layer, and applying a third etch solution to said etched first metal layer, the third etch solution having a faster rate of etch towards the second metal than towards the first metal to etch into said second metal layer without destroying the etched first metal layer. The first and second etch solutions comprise solutions with a pH below 10, preferably acidic solutions, and the third etch solution comprises a basic solution with a pH of at least 10.5, preferably a solution of alkali metal hydroxide with a pH of at least 11.0 containing an oxidizing agent.
Abstract:
A high-capacitance thin film capacitor is compact and has a low profile. A dielectric layer 3 is formed between opposed electrodes 1 and 2. Between the electrodes and the dielectric layer are two layers of conductive particles, 4 and 5.
Abstract:
A signal connector assembly with a plug contact (7) within a plug (6) having a high resistive portion (12). When each contact (7) of the assembly first makes contact with an associated electrical contact (15) within a mating receptacle (8), the high resistive portion (12) prevents a voltage surge. As the plug (6) is further inserted into the receptacle (8), the energy passing from the plug (6) to the receptacle (8) is gradually increased. Eventually, the receptacle contacts (15) within the receptacle (8) pass the high resistive portions (12) of the plug contacts (7) and make contact with conductive portions (14) of the plug contacts (7), thereby permitting transmission of valid signals without the generation of spurious errors.
Abstract:
A high-capacitance thin film capacitor is compact and has a low profile. A dielectric layer 3 is formed between opposed electrodes 1 and 2. Between the electrodes and the dielectric layer are two layers of conductive particles, 4 and 5.