公开(公告)号：EP1305256A2

公开(公告)日：2003-05-02

申请号：EP01959532.1

申请日：2001-07-31

Applicant: HRL LABORATORIES, LLC

Inventor： KUBENA, Randall, L. ,  CHANG, David, T.

IPC: B81B1/00

CPC classification number: B81C1/0015 ,  B81B2201/0242 ,  B81C2201/014 ,  B81C2201/0191 ,  B81C2203/036 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894

Abstract: A method of making a micro electro-mechanical gyroscope. A cantilevered beam structure, firstportions of side drive electrodes and a mating structure are defined on a first substrate or wafer;and at least one contact structure, second portions of the side drive electrodes and a matingstructure are defined on a second substrate or wafer, the mating structure on the second substrateor wafer being of a complementary shape to the mating structure on the first substrate or waferand the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The matingstructure of the first substrate is moved into a confronting relationship with the mating structureof the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer and alsobetween the first and second portions of the side drive electrodes to cause a bond to occurtherebetween. Then the first substrate or wafer is removed to free the cantilevered beam structurefor movement relative to the second substrate or wafer. The bonds are preferably eutectic bonds.

公开(公告)号：EP1233927A1

公开(公告)日：2002-08-28

申请号：EP00980528.4

申请日：2000-11-17

Applicant: The Regents of the University of California

Inventor： HANSFORD, Derek ,  FERRARI, Mauro

IPC: B81C1/00 ,  B82B1/00 ,  B82B3/00 ,  B01D63/00

CPC classification number: B81C1/00158 ,  B01D67/0058 ,  B01D67/0062 ,  B01D67/0072 ,  B01D69/02 ,  B01D71/02 ,  B01D71/022 ,  B01D2325/02 ,  B01D2325/04 ,  B01D2325/08 ,  B81B2201/06 ,  B81B2201/10 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2201/053

Abstract: A method of forming a membrane with nanometer scale pores includes forming a sacrificial etch stop layer on a substrate. A base layer is constructed on the sacrificial etch stop layer. Micrometer scale pores are formed within the base layer. A sacrificial base layer is built on the base layer. The sacrificial base layer is removed from selected regions of the base layer to define nanometer scale pores within the base layer. The resultant membrane has sub-fifty nanometer pores formed within it.

公开(公告)号：EP1213259A2

公开(公告)日：2002-06-12

申请号：EP01128161.5

申请日：2001-11-27

Applicant: MICROSCAN SYSTEMS INCORPORATED ,  XEROX CORPORATION

Inventor： Zosel, Andrew J. ,  Gulvin, Peter M. ,  Chen, Jingkuang ,  Kubby, Joel A. ,  Lin, Chuang-Chia ,  Tran, Alex T.

IPC: B81B3/00

CPC classification number: B81C1/00666 ,  B81B2203/058 ,  B81C2201/014 ,  B81C2201/0164 ,  B81C2201/056 ,  G02B26/0833

Abstract: The present invention provides a micromechanical or microoptomechanical structure. The structure is produced by a process comprising defining a structure on a single crystal silicon layer separated by an insulator layer from a substrate layer; depositing and etching a polysilicon layer on the single crystal silicon layer, with remaining polysilcon forming mechanical or optical elements of the structure; exposing a selected area of the single crystal silicon layer; and releasing the formed structure.

Abstract translation: 本发明提供了一种微机械或微光学机械结构。 该结构是由一种方法，包括限定通过从层基底绝缘层上分离的单晶硅层上的结构所产生; 沉积和在单晶硅层上蚀刻多晶硅层，与其余polysilcon形成该结构的机械或光学元件; 露出单晶硅层的选定区域; 和释放所形成的结构。

公开(公告)号：EP0840128B1

公开(公告)日：2002-03-27

申请号：EP97115499.2

申请日：1997-09-08

Applicant: AlliedSignal Incorporated

Inventor： Woodruff, James R.

IPC: G01P15/10 ,  G01P15/08

CPC classification number: B81B3/0081 ,  B81B2201/0235 ,  B81C2201/014 ,  B81C2201/019 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/097 ,  G01P2015/0814 ,  G01P2015/0828

公开(公告)号：EP1046917A2

公开(公告)日：2000-10-25

申请号：EP00108261.9

申请日：2000-04-14

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Oguchi, Takahiro, c/o(A170) Intell. Prop. Dept.

IPC: G01P15/08

CPC classification number: G01C19/5719 ,  B81B2201/025 ,  B81C1/00579 ,  B81C1/00587 ,  B81C2201/0132 ,  B81C2201/014 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0814 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/159

Abstract: A method of manufacturing an external force detection sensor in which a sensor element is formed by through-hole (20) dry etching of an element substrate (3), and an electrically conductive material is used as an etching stop layer (18) during the dry etching.

Abstract translation: 一种制造外力检测传感器的方法，其中通过元件基板（3）的通孔（20）干蚀刻形成传感器元件，并且导电材料被用作蚀刻停止层（18）期间 干蚀刻。

公开(公告)号：EP0831963A4

公开(公告)日：2000-01-05

申请号：EP96920377

申请日：1996-05-21

Applicant: UNIV CALIFORNIA

Inventor： CHU WEN-HUA ,  FERRARI MAURO

IPC: A61F2/02 ,  A61K9/00 ,  A61K9/50 ,  B01D39/16 ,  B01D39/20 ,  B01D67/00 ,  B01D69/02 ,  B01D69/10 ,  B01D69/12 ,  B01D71/02 ,  B01J13/00 ,  B01J13/02 ,  B81B1/00 ,  B81C1/00 ,  C04B41/45 ,  C23C16/01 ,  G03F7/00 ,  H01L21/205 ,  H01L21/302 ,  H01L21/306 ,  H01L21/3065 ,  H01L21/31

CPC classification number: A61K9/0097 ,  A61K9/0024 ,  B01D39/1692 ,  B01D39/20 ,  B01D67/003 ,  B01D67/0034 ,  B01D67/0058 ,  B01D67/0062 ,  B01D67/0072 ,  B01D69/02 ,  B01D69/12 ,  B01D71/02 ,  B01D2325/04 ,  B01J13/02 ,  B81B3/007 ,  B81B2201/10 ,  B81C1/00087 ,  B81C2201/014 ,  C04B41/4582 ,  C23C16/01 ,  G03F7/00 ,  G03F7/0015

公开(公告)号：EP0713117A1

公开(公告)日：1996-05-22

申请号：EP95117185.9

申请日：1995-10-31

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Smith, Gregory C. ,  Gove, Robert J. ,  Boysel, Robert M. ,  Markandey, Vishal ,  Hornbeck, Larry J.

IPC: G02B26/08

CPC classification number: B81C1/00111 ,  B81B2201/042 ,  B81C2201/014 ,  G02B26/0841 ,  G06K15/1252 ,  G09G3/20 ,  G09G3/2022 ,  G09G2340/0407 ,  G09G2340/0414 ,  G09G2340/0421 ,  G09G2340/0442 ,  G09G2360/02 ,  H04N1/1934 ,  H04N5/4401 ,  H04N5/7458 ,  H04N7/01

Abstract: A support pillar 408 for use with a micromechanical device, particularly a digital micromirror device, comprising a pillar material 404 supported by a substrate 400 and covered with a metal layer 406. The support pillar 408 is fabricated by depositing a layer of pillar material on a substrate 400, patterning the pillar layer to define a support pillar 408, and depositing a metal layer 406 over the support pillar 408 enclosing the support pillar. A planar surface even with the top of the pillar may be created by applying a spacer layer 410 over the pillars 408. After applying the spacer layer 410, holes 414 are patterned into the spacer layer to remove any spacer material that is covering the pillars. The spacer layer is then reflowed to fill the holes and lower the surface of the spacer layer such that the surface is coplanar with the tops of the support pillars 408.

Abstract translation: 用于微机械装置，特别是数字微镜装置的支撑柱408，其包括由衬底400支撑并被金属层406覆盖的支柱材料404.支撑柱408通过将柱材料层沉积在 衬底400，图案化柱层以限定支撑柱408，以及在包围支撑柱的支撑柱408上沉积金属层406。 可以通过在柱408上施加间隔层410来产生甚至具有柱顶部的平面。在施加间隔层410之后，将孔414图案化成间隔层，以移除覆盖柱的任何间隔物材料。 然后将间隔层回流以填充孔并降低间隔层的表面，使得表面与支撑柱408的顶部共面。图像

公开(公告)号：EP3310707A1

公开(公告)日：2018-04-25

申请号：EP15896501.2

申请日：2015-06-22

Applicant: INTEL Corporation

Inventor： LIN, Kevin Lai ,  PAWASHE, Chytra ,  KIM, Raseong ,  YOUNG, Ian A. ,  SINGH, Kanwal Jit ,  BRISTOL, Robert L.

IPC: B81B7/02 ,  H01L21/8238

CPC classification number: B81B7/007 ,  B81B2203/0118 ,  B81B2207/015 ,  B81B2207/07 ,  B81B2207/094 ,  B81C1/00246 ,  B81C1/00301 ,  B81C2201/0109 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0742 ,  B81C2203/0771

Abstract: A conductive layer is deposited into a trench in a sacrificial layer on a substrate. An etch stop layer is deposited over the conductive layer. The sacrificial layer is removed to form a gap. In one embodiment, a beam is over a substrate. An interconnect is on the beam. An etch stop layer is over the beam. A gap is between the beam and the etch stop layer.

公开(公告)号：EP2599745B1

公开(公告)日：2017-09-27

申请号：EP12194179.3

申请日：2012-11-26

Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives

Inventor： Robert, Philippe ,  Giroud, Sophie

IPC: B81C1/00

CPC classification number: B81C1/00134 ,  B81B2201/0264 ,  B81B2203/0109 ,  B81B2203/0136 ,  B81C1/00603 ,  B81C1/00801 ,  B81C2201/014

公开(公告)号：EP3062918A4

公开(公告)日：2017-07-26

申请号：EP13896392

申请日：2013-10-30

Applicant: HEWLETT-PACKARD DEV COMPANY L P

Inventor： MCKAY ROGER A ,  SADIK PATRICK W

IPC: B01D69/00

CPC classification number: C23F1/16 ,  B81B2201/058 ,  B81C1/00119 ,  B81C1/00539 ,  B81C2201/0115 ,  B81C2201/014 ,  C23C14/5873 ,  C23F1/02 ,  H01M4/0492 ,  H01M4/386

Abstract: Etching islands are formed on a first face of a substrate and a second face of the substrate non-parallel to the first face. The first face and the second face of the substrate are concurrently exposed to a solution that reacts with the etching islands to concurrently form porous regions extending into the first face and the second face.

Abstract translation: 蚀刻岛形成在衬底的第一面上并且衬底的第二面不平行于第一面。 衬底的第一面和第二面同时暴露于与蚀刻岛反应的溶液中，以同时形成延伸到第一面和第二面中的多孔区域。