公开(公告)号：EP1199746B1

公开(公告)日：2007-02-14

申请号：EP01302527.5

申请日：2001-03-20

Applicant: SANYO ELECTRIC CO., LTD.

Inventor： Sakamoto, Noriaki ,  Kobayashi, Yoshiyuki ,  Sakamoto, Junji ,  Okada, Yukio ,  Igarashi, Yusuke ,  Maehara, Eiju ,  Takahashi, Kouji

IPC: H01L23/31 ,  H01L23/433 ,  H01L21/56

CPC classification number: H01L24/32 ,  G11B5/4853 ,  H01L21/4832 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/4334 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/05599 ,  H01L2224/16 ,  H01L2224/32013 ,  H01L2224/32059 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83385 ,  H01L2224/85399 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H05K1/0204 ,  H05K1/021 ,  H05K1/182 ,  H05K1/189 ,  H05K2201/10416 ,  H05K2201/10727 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

公开(公告)号：EP1195813A3

公开(公告)日：2005-01-05

申请号：EP01302542.4

申请日：2001-03-20

Applicant: Sanyo Electric Co., Ltd.

Inventor： Sakamoto, Noriaki ,  Kobayashi, Yoshiyuki ,  Sakamoto, Junji ,  Okada, Yukio ,  Igarashi, Yusuke ,  Maehara, Eiju ,  Takahashi, Kouji

IPC: H01L23/367 ,  H01L23/433 ,  H01L23/31 ,  H01L21/68

CPC classification number: H01L24/32 ,  G11B5/4853 ,  H01L21/4832 ,  H01L23/3128 ,  H01L23/4334 ,  H01L23/49575 ,  H01L24/48 ,  H01L24/49 ,  H01L2221/68377 ,  H01L2224/02166 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/85424 ,  H01L2224/85447 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/351 ,  H05K1/0204 ,  H05K1/021 ,  H05K1/182 ,  H05K1/189 ,  H05K2201/10416 ,  H05K2201/10727 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A heat radiation electrode (15) is exposed from the back surface of an insulating resin (13), and a metal plate (23) is affixed to the heat radiation electrode (15). The back surface of this metal plate (23) and the back surface of a first supporting member (11) are substantially within a same plane, so that it is readily affixed to a second supporting member (24). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (15), the metal plate (23) and the second supporting member (24).

公开(公告)号：EP1187205A3

公开(公告)日：2004-06-23

申请号：EP01302535.8

申请日：2001-03-20

Applicant: SANYO ELECTRIC CO., LTD.

Inventor： Sakamoto, Noriaki ,  Kobayashi, Yoshiyuki ,  Sakamoto, Junji ,  Okada, Yukio ,  Igarashi, Yusuke ,  Maehara, Eiju ,  Takahashi, Kouji

IPC: H01L23/498

CPC classification number: H01L24/32 ,  H01L21/4832 ,  H01L23/3121 ,  H01L23/4334 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/97 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/26175 ,  H01L2224/32013 ,  H01L2224/32059 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/48227 ,  H01L2224/49171 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2224/81 ,  H01L2924/00015 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Resin encapsulated chip-scale package in which contact pads (13) of a chip (12) are connected to respective conductive traces (11A-11D) that are formed on an insulating layer (AF) on the active face of the chip. Heat removal from the device is improved by providing a conductive pad (11D) on the insulating layer.

公开(公告)号：EP1199746A3

公开(公告)日：2004-04-21

申请号：EP01302527.5

申请日：2001-03-20

Applicant: SANYO ELECTRIC Co., Ltd.

Inventor： Sakamoto, Noriaki ,  Kobayashi, Yoshiyuki ,  Sakamoto, Junji ,  Okada, Yukio ,  Igarashi, Yusuke ,  Maehara, Eiju ,  Takahashi, Kouji

IPC: H01L23/31 ,  H01L23/433 ,  H01L21/56

CPC classification number: H01L24/32 ,  G11B5/4853 ,  H01L21/4832 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/4334 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/05599 ,  H01L2224/16 ,  H01L2224/32013 ,  H01L2224/32059 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83385 ,  H01L2224/85399 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H05K1/0204 ,  H05K1/021 ,  H05K1/182 ,  H05K1/189 ,  H05K2201/10416 ,  H05K2201/10727 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A semiconductor chip (16) is moulded in insulating resin (13). A heat radiation electrode (15) is exposed at the back surface of the insulating resin (13), and a metal plate (23) is affixed to this heat radiation electrode (15). The back surface of this metal plate (23) and the back surface of a first supporting member (11) are substantially within a same plane, so that it is readily affixed to a second supporting member (24). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (15), the metal plate (23) and the second supporting member (24).

Abstract translation: 散热电极（15）从绝缘树脂（13）的背面露出，金属板（23）固定在该放热电极（15）上。 该金属板（23）的后表面和第一支撑构件（11）的后表面基本上位于同一平面内，从而容易地固定在第二支撑构件（24）上。 因此，可以通过散热电极（15），金属板（23）和第二支撑构件（24）有效地散发由半导体芯片产生的热量。

公开(公告)号：EP1195813A2

公开(公告)日：2002-04-10

申请号：EP01302542.4

申请日：2001-03-20

Applicant: Sanyo Electric Co., Ltd.

Inventor： Sakamoto, Noriaki ,  Kobayashi, Yoshiyuki ,  Sakamoto, Junji ,  Okada, Yukio ,  Igarashi, Yusuke ,  Maehara, Eiju ,  Takahashi, Kouji

IPC: H01L23/367

CPC classification number: H01L24/32 ,  G11B5/4853 ,  H01L21/4832 ,  H01L23/3128 ,  H01L23/4334 ,  H01L23/49575 ,  H01L24/48 ,  H01L24/49 ,  H01L2221/68377 ,  H01L2224/02166 ,  H01L2224/05554 ,  H01L2224/05599 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/85424 ,  H01L2224/85447 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/351 ,  H05K1/0204 ,  H05K1/021 ,  H05K1/182 ,  H05K1/189 ,  H05K2201/10416 ,  H05K2201/10727 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/01026 ,  H01L2924/01046 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A heat radiation electrode (15) is exposed from the back surface of an insulating resin (13), and a metal plate (23) is affixed to the heat radiation electrode (15). The back surface of this metal plate (23) and the back surface of a first supporting member (11) are substantially within a same plane, so that it is readily affixed to a second supporting member (24). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (15), the metal plate (23) and the second supporting member (24).

Abstract translation: 散热电极（15）从绝缘树脂（13）的背面露出，在散热电极（15）上粘贴有金属板（23）。 该金属板23的背面与第一支承部件11的背面大致在同一平面内，因此容易固定于第二支承部件24。 因此，可以通过散热电极（15），金属板（23）和第二支撑构件（24）有效地散发由半导体芯片产生的热量。

公开(公告)号：EP1199746A2

公开(公告)日：2002-04-24

申请号：EP01302527.5

申请日：2001-03-20

Applicant: SANYO ELECTRIC Co., Ltd.

Inventor： Sakamoto, Noriaki ,  Kobayashi, Yoshiyuki ,  Sakamoto, Junji ,  Okada, Yukio ,  Igarashi, Yusuke ,  Maehara, Eiju ,  Takahashi, Kouji

IPC: H01L23/31 ,  H01L23/367

CPC classification number: H01L24/32 ,  G11B5/4853 ,  H01L21/4832 ,  H01L21/563 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/4334 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/05599 ,  H01L2224/16 ,  H01L2224/32013 ,  H01L2224/32059 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2224/83385 ,  H01L2224/85399 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H05K1/0204 ,  H05K1/021 ,  H05K1/182 ,  H05K1/189 ,  H05K2201/10416 ,  H05K2201/10727 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A heat radiation electrode (15) is exposed from the back surface of an insulating resin (13), and a metal plate (23) is affixed to this heat radiation electrode (15). The back surface of this metal plate (23) and the back surface of a first supporting member (11) are substantially within a same plane, so that it is readily affixed to a second supporting member (24). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (15), the metal plate (23) and the second supporting member (24).

公开(公告)号：EP1195812A2

公开(公告)日：2002-04-10

申请号：EP01302532.5

申请日：2001-03-20

Applicant: Sanyo Electric Co., Ltd.

Inventor： Sakamoto, Noriaki ,  Kobayashi, Yoshiyuki ,  Sakamoto, Junji ,  Okada, Yukio ,  Igarashi, Yusuke ,  Maehara, Eiju ,  Takahashi, Kouji

IPC: H01L23/367

CPC classification number: H05K1/021 ,  G11B5/4853 ,  H01L21/4832 ,  H01L23/36 ,  H01L23/4334 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/05554 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73257 ,  H01L2224/85001 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/07802 ,  H01L2924/10161 ,  H01L2924/10162 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18165 ,  H05K1/0204 ,  H05K1/182 ,  H05K1/189 ,  H05K2201/10416 ,  H05K2201/10727 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: The back surface of a semiconductor chip (16) is exposed from the back surface of an insulating resin (13), and a metal plate (23) is affixed to this semiconductor chip (16). The back surface of this metal plate (23) and the back surface of a first supporting member (11) are substantially within a same plane, so that it is readily affixed to a second supporting member (24). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the metal plate (23) and the second supporting member (24).

公开(公告)号：EP1195746A2

公开(公告)日：2002-04-10

申请号：EP01302534.1

申请日：2001-03-20

Applicant: SANYO ELECTRIC Co., Ltd.

Inventor： Sakamoto, Noriaki ,  Kobayashi, Yoshiyuki ,  Sakamoto, Junji ,  Okada, Yukio ,  Igarashi, Yusuke ,  Maehara, Eiju ,  Takahashi, Kouji

IPC: G11B5/48

CPC classification number: H01L23/3135 ,  G11B5/4853 ,  H01L21/4832 ,  H01L23/4334 ,  H01L23/525 ,  H01L24/10 ,  H01L24/13 ,  H01L24/32 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/05599 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/26175 ,  H01L2224/32013 ,  H01L2224/32059 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/83385 ,  H01L2224/85399 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H05K1/0204 ,  H05K1/189 ,  H05K3/0061 ,  H05K2201/10416 ,  H05K2201/10727 ,  H05K2201/10734 ,  H05K2201/2009 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A heat radiation electrode (15) is exposed from the back surface of an insulating resin (13), and a metal plate (23) is affixed to this heat radiation electrode (15). The back surface of this metal plate (23) and the back surface of a flexible sheet become substantially within a same plane, so that it is readily affixed to a second supporting member (24). In addition, the top surface of the heat radiation electrode (15) is made protrusive beyond the top surfaces of the pads (14) to reduce the distance between the semiconductor chip (16) and the heat radiation electrode (15). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (15), the metal plate (23) andthe second supporting member (24).

Abstract translation: 散热电极（15）从绝缘树脂（13）的背面露出，金属板（23）固定在该放热电极（15）上。 该金属板（23）的后表面和柔性片的后表面基本上在相同的平面内，从而容易地固定在第二支撑构件（24）上。 此外，散热电极（15）的上表面被突出超过焊盘（14）的顶表面，以减小半导体芯片（16）和散热电极（15）之间的距离。 因此，可以通过散热电极（15），金属板（23）和第二支撑构件（24）有效地散发由半导体芯片产生的热量。

公开(公告)号：EP1195746A3

公开(公告)日：2008-06-04

申请号：EP01302534.1

申请日：2001-03-20

Applicant: SANYO ELECTRIC CO., LTD.

Inventor： Sakamoto, Noriaki ,  Kobayashi, Yoshiyuki ,  Sakamoto, Junji ,  Okada, Yukio ,  Igarashi, Yusuke ,  Maehara, Eiju ,  Takahashi, Kouji

IPC: G11B5/48

CPC classification number: H01L23/3135 ,  G11B5/4853 ,  H01L21/4832 ,  H01L23/4334 ,  H01L23/525 ,  H01L24/10 ,  H01L24/13 ,  H01L24/32 ,  H01L24/48 ,  H01L24/97 ,  H01L2224/05599 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/26175 ,  H01L2224/32013 ,  H01L2224/32059 ,  H01L2224/32225 ,  H01L2224/45099 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73204 ,  H01L2224/83385 ,  H01L2224/85399 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/07802 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/3011 ,  H01L2924/351 ,  H05K1/0204 ,  H05K1/189 ,  H05K3/0061 ,  H05K2201/10416 ,  H05K2201/10727 ,  H05K2201/10734 ,  H05K2201/2009 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A heat radiation electrode (15) is exposed from the back surface of an insulating resin (13), and a metal plate (23) is affixed to this heat radiation electrode (15). The back surface of this metal plate (23) and the back surface of a flexible sheet become substantially within a same plane, so that it is readily affixed to a second supporting member (24). In addition, the top surface of the heat radiation electrode (15) is made protrusive beyond the top surfaces of the pads (14) to reduce the distance between the semiconductor chip (16) and the heat radiation electrode (15). Accordingly, the heat generated by the semiconductor chip can be efficiently dissipated via the heat radiation electrode (15), the metal plate (23) andthe second supporting member (24).

公开(公告)号：EP1202349A3

公开(公告)日：2005-03-16

申请号：EP01302531.7

申请日：2001-03-20

Applicant: SANYO ELECTRIC CO., LTD.

Inventor： Sakamoto, Noriaki ,  Kobayashi, Yoshiyuki ,  Sakamoto, Junji ,  Okada, Yukio ,  Igarashi, Yusuke ,  Maehara, Eiju ,  Takahashi, Kouji

IPC: H05K1/18 ,  H01L23/538 ,  H01L23/13

CPC classification number: H01L24/32 ,  H01L21/4832 ,  H01L23/36 ,  H01L23/4334 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/05571 ,  H01L2224/05573 ,  H01L2224/16245 ,  H01L2224/32057 ,  H01L2224/32245 ,  H01L2224/451 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/83385 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/07802 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/1433 ,  H01L2924/15311 ,  H01L2924/15787 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18165 ,  H01L2924/3011 ,  H01L2924/351 ,  H05K1/0204 ,  H05K1/021 ,  H05K1/182 ,  H05K1/189 ,  H05K3/26 ,  H05K3/281 ,  H05K3/303 ,  H05K2201/10416 ,  H05K2201/10727 ,  H05K2201/10734 ,  H05K2201/2036 ,  Y02P70/613 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/05599

Abstract: A first metal film 14 made of a Cu plated film is formed on a radiation substrate 13A made of A1, and an island 15 exposed from a back surface of a semiconductor device 10 is adhered thereto. At that time, the back surface of the semiconductor device 10 is brought into contact with contact areas, and a first opening portion OP is opened larger than an arranging area of the semiconductor device 10. Accordingly, the cleaning can be executed via the first opening portion OP exposed from peripheries of the semiconductor device 10. In addition, the heat generated from semiconductor elements 16 can be radiated excellently from the island 15 via a second supporting member 13A.