摘要:
A programmable circuit includes an array of printed groups of microscopic transistors or diodes. The devices are pre-formed and printed as an ink and cured. The devices in each group are connected in parallel so that each group acts as a single device. In one embodiment, about 10 devices are contained in each group so the redundancy makes each group very reliable. Each group has at least one electrical lead that terminates in a patch area on the substrate. An interconnection conductor pattern interconnects at least some of the leads of the groups in the patch area to create logic circuits for a customized application of the generic circuit. The groups may also be interconnected to be logic gates, and the gate leads terminate in the patch area. The interconnection conductor pattern then interconnects the gates for form complex logic circuits.
摘要:
An integrated circuit (IC) package includes a substrate, a ground line, and an encoded region. The encoded region provides information based upon selective deposition of solder balls electrically coupled to the ground line.
摘要:
A method of fabricating a memory module according to one embodiment, a clock booster is mounted on a multi-layer circuit bard (101). The clock booster may be any apparatus that receives a clock input, and output one or more clock signals capable of driving a multiplicity of logic parts without clock distortion. In a preferred embodiment, a phase-locked loop circuit may be used as a clock booster. The test and patching (102) allows a fully-functional memory part adds, it is desirable to only connect the clock signal to those memory parts that are utilized. This may be accomplished using any number of switching mechanisms to connect or disconnect a clock signal to a memory part. In a preferred embodiment, a clock patching network may be used to selectively connect or disconnect outputs of a clock booster to the memory parts (103).
摘要:
A method and apparatus for building a memory module using improved patching schemes comprises, mounting multiple primary and secondary memory parts on a mufti-layer circuit board (111), positioning I/O bit line patching networks adjacent to the primary and secondary memory parts (112), matching read/write control signals for primary and secondary memory parts which share I/O bit line patching networks (113), testing primary and secondary memory parts to identify non-operable I/O lines (114), and patching any non-operable I/O line of a primary memory part by replacing it with a fully operable I/O line of its associated backup memory part (115). The method and apparatus include mufti-layer circuit boards which utilize 2-to 1, 4-to-1, and 8-to-1 patching configurations.
摘要:
A method of fabricating a memory module according to one embodiment, a clock booster is mounted on a multi-layer circuit bard (101). The clock booster may be any apparatus that receives a clock input, and output one or more clock signals capable of driving a multiplicity of logic parts without clock distortion. In a preferred embodiment, a phase-locked loop circuit may be used as a clock booster. The test and patching (102) allows a fully-functional memory part adds, it is desirable to only connect the clock signal to those memory parts that are utilized. This may be accomplished using any number of switching mechanisms to connect or disconnect a clock signal to a memory part. In a preferred embodiment, a clock patching network may be used to selectively connect or disconnect outputs of a clock booster to the memory parts (103).
摘要:
A method and apparatus for enhancing memory speed and capacity utilizes a set of electronic switches (24) to isolate the computer data bus (2) from the memory chips (16, 32, 34, 36). The apparatus includes one or more multi-sides memory boards (10, 12, 14) with etched leads (30, 42), lands and feed-through. The memory chips may be mounted on either one side or both sides of each board. Connection between the memory board and the motherboard is made by means of a comb of contact fingers (5) or edge-connector which mates with a connector (8) on the motherboard (28). The data lines and address lines of the computer bus are distinct from each other, and routed to the memory board via the edge connector (8). A set of CMOS TTL or FET switches (24) is located adjacent to the comb (5), and are switched on and off by a decoded combination of address, control, or data lines or by a distinct enable line provided by the CPU (3), controller or other decoding means located on the motherboard (28). As a result, only the memory chips actually required for the memory access are switched on, so that the other memory chips are isolated from the data bus (2). Because of this isolation, the capacitance of the non-switched components is not seen by the data bus, resulting in a lower overall capacitance, and a higher inherent memory access.
摘要:
Die Erfindung betrifft ein Kodierelement (16) für ein elektrisches Modul (30), mit mindestens einer Schneide (18), die dafür vorgesehen ist, eine von mehreren auf einem Substrat (10) angeordneten Leiterbahnen (12) zu durchtrennen, wodurch dem elektrischen Modul (30) eine Adresse zugeordnet wird. Die Erfindung betrifft auch ein elektrisches Modul mit einem solchen Kodierelement.