公开(公告)号：JP4262699B2

公开(公告)日：2009-05-13

申请号：JP2005182130

申请日：2005-06-22

Applicant: 日本航空電子工業株式会社

Inventor： 拓也 宮下 ,  正史 岡田 ,  憲治 松本

IPC: H05K3/28 ,  H05K1/11 ,  H05K3/32

CPC classification number: H05K3/282 ,  H05K3/325 ,  H05K2201/0162 ,  H05K2201/0179 ,  Y10T428/24917 ,  Y10T428/31681

公开(公告)号：JP2009088485A

公开(公告)日：2009-04-23

申请号：JP2008200567

申请日：2008-08-04

Applicant: E I Du Pont De Nemours & Co ,  イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company

Inventor： BAO LIJIE ,  ZHIGANG RICK LI ,  REARDON DAMIEN FRANCIS ,  RYLEY JAMES F ,  PALANDUZ CENGIZ AHMET

IPC: H01G4/33 ,  H05K1/18

CPC classification number: H01G4/1227 ,  H01G4/12 ,  H01L21/31691 ,  H01L28/55 ,  H05K1/162 ,  H05K3/1291 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0355 ,  H05K2203/1105 ,  H05K2203/1126

Abstract: PROBLEM TO BE SOLVED: To provide a method of fabricating thin film dielectrics having high-capacitance density, low loss tangent, high insulation breakdown voltage, and other desirable physical and electrical properties.
SOLUTION: Deposited thin-film dielectrics having columnar grains and high dielectric constants are formed on heat treated and polished metal foil. The sputtered dielectrics are annealed at low oxygen partial pressures, thereby obtaining a high-capacitance density thin film dielectrics.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制造具有高电容密度，低损耗正切，高绝缘击穿电压以及其它所需物理和电性能的薄膜电介质的方法。 解决方案：在热处理和抛光的金属箔上形成具有柱状晶粒和高介电常数的沉积的薄膜电介质。 溅射电介质在低氧分压下退火，从而获得高电容密度的薄膜电介质。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008084933A

公开(公告)日：2008-04-10

申请号：JP2006260548

申请日：2006-09-26

Applicant: Fujitsu Ltd ,  富士通株式会社

Inventor： SHIOGA KENJI ,  KURIHARA KAZUAKI ,  NAKAGAWA KANAE ,  SAKAI TAIJI ,  MIZUKOSHI MASATAKA

IPC: H01L23/12

CPC classification number: H05K1/162 ,  H01L21/486 ,  H01L23/15 ,  H01L23/498 ,  H01L23/49827 ,  H01L23/50 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16 ,  H01L2224/16235 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01046 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/3011 ,  H05K1/0306 ,  H05K1/112 ,  H05K3/4605 ,  H05K2201/0179 ,  H05K2201/09509 ,  H05K2201/096 ,  H05K2201/09627 ,  H05K2201/10378 ,  Y10T29/49002 ,  Y10T29/49128 ,  Y10T29/4913 ,  Y10T29/49144 ,  Y10T29/49155 ,  Y10T29/49156 ,  H01L2224/05599

Abstract: PROBLEM TO BE SOLVED: To provide an inexpensive interposer having a thin-film capacitor having very high capacitance. SOLUTION: The interposer has a glass substrate 46 having a first through electrode 47 buried therein; a plurality of resin layers 68, 20, 32 supported by the glass substrate; a thin-film capacitor, as thin-film capacitors 18a, 18b buried between the first resin layer 68 out of the resin layers and the second resin layer 20 out of the resin layers, having first capacitor electrodes 12a, 12b, second capacitor electrodes 16 formed oppositely to the first capacitor electrodes, and capacitor dielectric films 14 formed between the first and second capacitor electrodes and having a dielectric constant of ≥200; and second through electrodes 77a, 77b piercing through the resin layers, electrically connected the first through electrode and electrically connected to the first capacitor electrode or the second capacitor electrode. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供具有非常高电容的薄膜电容器的便宜的插入器。 解决方案：插入件具有埋置在其中的第一通孔47的玻璃基板46; 由玻璃基板支撑的多个树脂层68,20,32; 薄膜电容器，作为从树脂层中的第一树脂层68和树脂层之间的第二树脂层20埋设的薄膜电容器18a，18b，具有第一电容电极12a，12b，第二电容电极16 与第一电容器电极相对地形成，以及形成在第一和第二电容器电极之间并且介电常数≥200的电容器电介质膜14; 穿过树脂层的第二贯通电极77a，77b与第一贯通电极电连接，与第一电容电极或第二电容电极电连接。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008034626A

公开(公告)日：2008-02-14

申请号：JP2006206365

申请日：2006-07-28

Applicant: Tdk Corp ,  Tdk株式会社

Inventor： YOSHIZAWA TOSHIYUKI ,  MIYAZAKI MASAHIRO ,  FURUYA AKIRA ,  KUWAJIMA HAJIME ,  ISHIKURA MASAOMI

IPC: H01F27/00 ,  H01F17/00 ,  H01F17/02 ,  H01F41/04 ,  H03H5/02 ,  H03H7/12

CPC classification number: H05K1/162 ,  H01L27/016 ,  H01L28/10 ,  H01L28/40 ,  H05K1/165 ,  H05K3/0023 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0195 ,  H05K2201/09509 ,  H05K2201/1006

Abstract: PROBLEM TO BE SOLVED: To provide an LC-composite electronic component wherein deterioration of filter characteristic when used as an LC filter is restrained.
SOLUTION: The electronic component 100 has a substrate 1, a lower conductor layer 2 provided on the substrate 1, an inorganic dielectric film 5 covering the lower conductor layer 2, and an upper conductor layer 3 with an upper electrode 3C provided on the inorganic dielectric film 5. The lower conductor layer 2 has a lower electrode 2C constituting a capacitor C1 together with the upper electrode 3C and the inorganic dielectric film 5, and a coil 2L constituting an inductor L1. An entire of the inorganic dielectric film 5 is formed integrally; and the lower conductor layer 2 is in contact with the substrate 1, the inorganic dielectric film 5, and the upper conductor layer 3 alone.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种当用作LC滤波器时滤波器特性的劣化被抑制的LC复合电子部件。 电子部件100具有基板1，设置在基板1上的下导体层2，覆盖下导体层2的无机介电膜5和上导体层3，上电极3C设置在 无机介电膜5.下导体层2具有与上电极3C和无机电介质膜5一起构成电容器C1的下电极2C和构成电感器L1的线圈2L。 整个无机介电膜5整体形成; 下导体层2与基板1，无机介电膜5和上导体层3单独接触。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2008028372A

公开(公告)日：2008-02-07

申请号：JP2007144890

申请日：2007-05-31

Applicant: Samsung Electro Mech Co Ltd ,  三星電機株式会社

Inventor： LEE JUNG WON ,  CHUNG YUL KYO ,  LEE IN HYUNG

IPC: H05K1/16 ,  H01G4/12

CPC classification number: H05K1/162 ,  H01G4/33 ,  H01G13/00 ,  H01L21/4857 ,  H01L23/50 ,  H01L2924/0002 ,  H05K2201/0108 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2203/016 ,  H05K2203/107 ,  Y10T29/43 ,  Y10T29/49155 ,  Y10T29/49165 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a printed circuit board incorporating a capacitor having a dielectric thin film using a laser lift-off and a capacitor manufactured by this method. SOLUTION: There are provided a manufacturing method of the present invention incorporating a thin film capacitor, including: forming a dielectric thin film 13 on a transparent substrate 11 and then applying heat treatment thereto; forming a conductive layer 15 on the dielectric thin film thus subjected to the heat treatment; irradiating a lower part of the transparent substrate of a lamination formed as described above with laser beams, thereby separating the transparent substrate from this lamination; forming a conductive layer 17 having a prescribed pattern on the dielectric thin film from which the transparent substrate is separated; and forming an insulating layer and the conductive layer alternately by desired number of times on the conductive layer in upper/lower parts of the formed thin film, and a printed circuit board incorporating the thin film capacitor manufactured by this method. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供一种包括使用激光剥离的具有电介质薄膜的电容器的印刷电路板和通过该方法制造的电容器的制造方法。 提供了一种结合薄膜电容器的本发明的制造方法，包括：在透明基板11上形成电介质薄膜13，然后对其进行热处理; 在经过热处理的电介质薄膜上形成导电层15; 用激光束照射如上所述形成的叠层的透明基板的下部，从而将透明基板从该层压中分离出来; 在分离了透明基板的电介质薄膜上形成具有规定图案的导电层17; 并且在形成的薄膜的上部/下部的导电层上交替地形成绝缘层和导电层所需的次数，以及包含通过该方法制造的薄膜电容器的印刷电路板。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2007507105A

公开(公告)日：2007-03-22

申请号：JP2006528019

申请日：2004-09-02

Applicant: メドトロニック ミニメド インコーポレイテッド

Inventor： ラジブ シャー ,  ショーン ペンド

IPC: H05K3/28 ,  H01L21/48 ,  H01L23/12 ,  H05K1/16 ,  H05K3/04 ,  H05K3/06 ,  H05K3/40 ,  H05K3/46

CPC classification number: H05K3/467 ,  H01L21/4857 ,  H01L21/4867 ,  H01L2924/0002 ,  H01L2924/19107 ,  H05K1/162 ,  H05K3/048 ,  H05K3/4053 ,  H05K3/4061 ,  H05K3/4664 ,  H05K2201/0179 ,  H05K2203/0278 ,  H05K2203/085 ,  H05K2203/1476 ,  H05K2203/308 ,  H01L2924/00

Abstract: マルチチップモジュールまたはハイブリッド回路用の多層回路基板は、誘電性のベース基板、ベース基板に形成された導体、および導体およびベース基板上に形成された真空堆積誘電体薄膜を含む。 真空堆積誘電体薄膜はシャドウマスク法により形成された犠牲構造を用いてパターニングされる。 この方法で形成された基板により、配線密度を著しく高めることができると共に基板全体の厚さを著しく減少させることができる。

公开(公告)号：JP2007036237A

公开(公告)日：2007-02-08

申请号：JP2006199877

申请日：2006-07-21

Applicant: Samsung Electro-Mechanics Co Ltd ,  サムソン エレクトロ−メカニックス カンパニーリミテッド.

Inventor： SONG WON HOON ,  CHUNG YUL KYO ,  LIM SUNG TAEK

IPC: H01L23/12 ,  H01L21/316

CPC classification number: H01L21/31691 ,  H01G4/33 ,  H01L21/31683 ,  H05K1/162 ,  H05K2201/0175 ,  H05K2201/0179

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing compound metal-oxide dielectric film in which the film structure of a part of a metal element is formed in an ordinary low temperature film forming step, and then the synthesis and the crystallization of the other metal are implemented using a hydrothermal synthesis method, and to provide a compound metal-oxide dielectric film.
SOLUTION: The method of manufacturing a dielectric film comprising compound metal oxide comprising at least two sorts of metal elements on a substrate comprises the steps of forming an amorphous thin film comprising a part of the metal element of at least two sorts of metal elements, providing a hydrothermal reaction solution in which the precursor of the other remained metal element of at least two sorts of metal elements is mixed, allowing the amorphous thin film to be immersed in the hydrothermal reaction solution, and hydrothermally treating the amorphous thin film such that a compound oxide film in which the other remained metal is synthesized with the amorphous thin film and crystallized is formed.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种制备复合金属氧化物电介质膜的方法，其中在普通的低温成膜步骤中形成金属元素的一部分的膜结构，然后进行合成和结晶 的另一种金属是使用水热合成方法实现的，并提供复合金属氧化物介电膜。 解决方案：包括在基板上包含至少两种金属元素的复合金属氧化物的电介质膜的制造方法包括以下步骤：形成非晶态薄膜，其包含至少两种金属的金属元素的一部分 元素，提供其中混合有至少两种金属元素的另一种金属元素的前体的水热反应溶液，使非晶态薄膜浸入水热反应溶液中，并将非晶薄膜水热处理如 形成其中剩余金属的复合氧化物膜与非晶薄膜合成并结晶化。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007013090A

公开(公告)日：2007-01-18

申请号：JP2006013073

申请日：2006-01-20

Applicant: Samsung Electro Mech Co Ltd ,  三星電機株式会社

Inventor： SHIN HYO SOON ,  YOON SOON GIL ,  PARK EUN TAE ,  LYOO SOO HYUN

IPC: H01G4/33 ,  H05K1/16

CPC classification number: H05K1/162 ,  H01G4/10 ,  H05K2201/0175 ,  H05K2201/0179

Abstract: PROBLEM TO BE SOLVED: To provide a thin film capacitor etc. which includes a dielectric film of a sufficient dielectric constant obtained through a low temperature film-forming process.
SOLUTION: A thin film capacitor which includes a dielectric film of a dielectric constant of 15 or more is formed using a first and second metal electrode films and an amorphous metal oxide of BiZnNb positioned between the electrodes. A laminated layer structure is formed with the first metal electrode film, the dielectric film of dielectric constant 15 or more formed using the amorphous metal oxide of BiZnNb, and the second metal electrode film in order. Since the amorphous metal oxide of BiZnNb applied as a dielectric film exhibits a high dielectric constant even without proceeding a high-temperature heat treatment process for crystallization, it can be usefully used as a thin film capacitor of a laminated layers structure of a polymer base, such as a printed circuit substrate.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种薄膜电容器等，其包括通过低温成膜工艺获得的足够介电常数的电介质膜。 解决方案：使用位于电极之间的BiZnNb的第一和第二金属电极膜和非晶态金属氧化物，形成介电常数为15以上的电介质膜的薄膜电容器。 使用第一金属电极膜，使用BiZnNb的非晶态金属氧化物形成的介电常数为15以上的电介质膜和第二金属电极膜形成层叠层结构。 由于作为电介质膜而使用的BiZnNb的非晶态金属氧化物即使不进行用于结晶的高温热处理工艺，也表现出高介电常数，因此可以有效地用作聚合物基材层压结构的薄膜电容器， 例如印刷电路基板。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007005804A

公开(公告)日：2007-01-11

申请号：JP2006171575

申请日：2006-06-21

Applicant: E I Du Pont De Nemours & Co ,  イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニーE.I.Du Pont De Nemours And Company

Inventor： SUH SEIGI ,  BORLAND WILLIAM J

IPC: H01G4/33 ,  H01G4/08

CPC classification number: H05K1/162 ,  H01G4/1227 ,  H01L21/31691 ,  H01L28/55 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0355

Abstract: PROBLEM TO BE SOLVED: To provide thin film capacitors, more particularly, thin film capacitors formed on metal foils which can be embedded in a printed circuit board (PWB) attached to a printed circuit board package, such that a capacitance for reducing, connecting and controlling voltage is provided to an integrated circuit die.
SOLUTION: The capacitor is directed to a dielectric thin film composition comprising (1) one or more barium/titanium-containing additives selected from (a) barium titanate, (b) any composition that can form barium titanate during firing, and (c) mixtures thereof; dissolved in (2) organic medium. The thin film composition is doped with 0.002-0.05 atom percent of a dopant comprising an element selected from Sc, Cr, Fe, Co, Ni, Ca, Zn, Al, Ga, Y, Nd, Sm, Eu, Gd, Dy, Ho, Er, Yb, Lu and mixtures thereof, and to capacitors comprising such compositions.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供薄膜电容器，特别是形成在金属箔上的薄膜电容器，其可以嵌入到印刷电路板封装中的印刷电路板（PWB）中，使得用于还原的电容 将连接和控制电压提供给集成电路管芯。 解决方案：电容器被引导到介电薄膜组合物，其包含（1）一种或多种选自（a）钛酸钡的钡/钛的添加剂，（b）在烧制期间可形成钛酸钡的任何组合物，以及 （c）其混合物; 溶于（2）有机介质中。 所述薄膜组合物掺杂0.002-0.05原子％的包含选自Sc，Cr，Fe，Co，Ni，Ca，Zn，Al，Ga，Y，Nd，Sm，Eu，Gd，Dy， Ho，Er，Yb，Lu及其混合物，以及包含这种组合物的电容器。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007005467A

公开(公告)日：2007-01-11

申请号：JP2005182130

申请日：2005-06-22

Applicant: Japan Aviation Electronics Industry Ltd ,  日本航空電子工業株式会社

Inventor： MIYASHITA TAKUYA ,  OKADA MASASHI ,  MATSUMOTO KENJI

IPC: H05K3/28 ,  H05K1/02

CPC classification number: H05K3/282 ,  H05K3/325 ,  H05K2201/0162 ,  H05K2201/0179 ,  Y10T428/24917 ,  Y10T428/31681

Abstract: PROBLEM TO BE SOLVED: To provide a wiring substrate for preventing generation of oxidation, corrosion, and migration of connecting point, and obtaining excellent continuity condition at the connecting point. SOLUTION: In the wiring substrate where a metal wiring pattern including the connecting points for external connections is formed on the substrate; an organic thin film including cylane is formed on the substrate covering the metal wiring pattern, and the connecting point is connected in conductive via an organic thin film. Like the related art where a resin protecting film formed at the connecting point is broken or erased at the time of connection, conductive connection can be realized, for example, even in the case of external component having weak contact pressure. COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种用于防止连接点的氧化，腐蚀和迁移的产生的布线基板，并且在连接点获得良好的连续性条件。 解决方案：在基板上形成包括用于外部连接的连接点的金属布线图案的布线基板中; 在覆盖金属布线图案的基板上形成包括圆锥形的有机薄膜，并且连接点通过有机薄膜导电地连接。 与在连接点形成的树脂保护膜在连接时断裂或擦除相关的现有技术一样，即使在具有接触压力较弱的外部部件的情况下，也可实现导电连接。 版权所有（C）2007，JPO＆INPIT