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公开(公告)号：JP4847198B2
公开(公告)日：2011-12-28
申请号：JP2006120214
申请日：2006-04-25
Applicant: 株式会社日立製作所
Inventor： バーダリナラヤン ハルシャ , ハント フランク , 和孝 岡本
CPC classification number: H05K5/066 , B23K20/1265 , H05K5/0052
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12.发明专利
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公开(公告)号：JPWO2004110692A1
公开(公告)日：2006-07-27
申请号：JP2005507006
申请日：2004-06-11
Applicant: 株式会社日立製作所
IPC: B23K20/12
CPC classification number: B23K20/1255 , B23K20/1265
Abstract: 重ね継手の接合強度が高くなる摩擦攪拌接合方法を提供する。接合ツール(1)は、ショルダ(3)の先端に小径の凸部(2)を有する。この接合ツールを回転させながら、重ね継手の上板(4)にのみ圧入する。摩擦攪拌作用により、上板側の接合界面(6)は塑性流動し、重ね面の表面酸化膜が剥離し界面が活性化されて良好な接合部を得られる。また接合ツールは、先端に小径で半球形状の凸部(2)を有する形状により、上板接合部厚さ(12)が大きくなり、接合強度の高い重ね継手部が得られる。
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公开(公告)号：JP3736251B2
公开(公告)日：2006-01-18
申请号：JP2000009969
申请日：2000-01-13
Applicant: 株式会社日立製作所
IPC: H01L23/12 , H01L23/373 , C04B35/64 , C22C9/00 , H01L23/14
CPC classification number: H01L2224/45124 , H01L2224/45144 , H01L2224/48095 , H01L2224/48247 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/16195 , H01L2924/181 , H01L2924/3011 , H01L2924/00 , H01L2924/00012
Abstract: PROBLEM TO BE SOLVED: To provide a composite copper material excellent in plastic machining, a method of production, heat dissipation plate of a semiconductor device and a semiconductor device employing it. SOLUTION: The composite copper material comprises a metal and a granular or rod-like inorganic compound, and contains 10-55 vol.% of cuprous oxide (Cu2O) and the remainder of copper (Cu), and has coefficient of thermal expansion of 5×10-6-17×10-6/ deg.C and thermal conductivity of 100-380 W/m.k. It can be produced through a series of processes of melting, casting and machining and can be applied to the heat dissipation plate of a semiconductor device.
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公开(公告)号：JP3690171B2
公开(公告)日：2005-08-31
申请号：JP6954099
申请日：1999-03-16
Applicant: 株式会社日立製作所
IPC: C22C1/05 , B22F1/00 , C22C1/10 , C22C9/00 , C22C29/12 , C22C32/00 , C22F1/08 , H01L23/14 , H01L23/34 , H01L23/373 , H01L23/433 , H01L25/07
CPC classification number: H01L24/32 , C22C1/1036 , C22C32/0021 , C22C32/0036 , H01L23/142 , H01L23/3735 , H01L23/4334 , H01L24/29 , H01L24/45 , H01L24/48 , H01L24/49 , H01L24/73 , H01L25/072 , H01L2224/0603 , H01L2224/291 , H01L2224/29111 , H01L2224/2919 , H01L2224/32225 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48227 , H01L2224/48247 , H01L2224/48472 , H01L2224/49109 , H01L2224/49111 , H01L2224/49113 , H01L2224/73265 , H01L2224/83455 , H01L2224/83805 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01018 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/10329 , H01L2924/12042 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/1532 , H01L2924/15787 , H01L2924/16195 , H01L2924/181 , H01L2924/3011 , H01L2924/30111 , H01L2924/3511 , H01L2924/00014 , H01L2924/01014 , H01L2924/00 , H01L2924/01028 , H01L2924/00012 , H01L2924/3512 , H01L2924/0695 , H01L2924/014
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Patent Agency Ranking
公开(公告)号：JP3371874B2
公开(公告)日：2003-01-27
申请号：JP37268199
申请日：1999-12-28
Applicant: 株式会社日立製作所
CPC classification number: H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/01322 , H01L2924/13055 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
Abstract: PROBLEM TO BE SOLVED: To provide a power module of low thermal expansion, high thermal conductivity, and satisfactory workability. SOLUTION: For a power module where a semiconductor element mounted on a conductive member and a part of the conductive member are sealed with resin, at least a part of the conductive member, where the element is mounted comprises a copper composite member comprising copper oxide.
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公开(公告)号：JP5211246B2
公开(公告)日：2013-06-12
申请号：JP2011528518
申请日：2009-08-28
Applicant: 株式会社日立製作所
IPC: H01H33/664 , H01H33/666
CPC classification number: H01H33/664 , H01H1/0206 , H01H33/6643
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公开(公告)号：JP3552623B2
公开(公告)日：2004-08-11
申请号：JP37268399
申请日：1999-12-28
Applicant: 株式会社日立製作所
IPC: H01L23/373 , C22C1/10 , C22C9/00 , H01L25/07 , H01L25/18
CPC classification number: H01L2224/45124 , H01L2224/45144 , H01L2224/48472 , H01L2224/49109 , H01L2924/01322 , H01L2924/1301 , H01L2924/1305 , H01L2924/13055 , H01L2924/13091 , H01L2924/00
Abstract: PROBLEM TO BE SOLVED: To provide a copper composite material of low thermal expansion coefficient and high heat conductivity, a heat-sink board for a semiconductor device using it, and the semiconductor device. SOLUTION: Copper and copper oxide are contained, while the aspect ratio for the most part of copper oxide is 5-20. It is preferred that between room temperature and 300 deg.C, the linear expansion coefficient be 5×10-6-17×10-6/ deg.C, the thermal conductivity be 100-380 W/m.K, the thermal conductivity in its orientation be higher than that in the direction perpendicular to the orientation, with the difference being 5-120 W/m.K, and the linear expansion coefficient in the orientation direction between the room temperature and 300 deg.C be higher than that in the perpendicular direction in the orientation direction.
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